First high brightness LED GaN-on-Silicon with 160lm per watt, almost equivalent to sapphire LED Base Toshiba has completely changed its technology to multiply by 2 the brightness of their GaN-on-silicon LEDs. Today the Toshiba white LEDs have characteristics close to the classic sapphire LED with a smaller cost. The large panel of products and packages available todaya shows the maturity of Toshiba products and their willing to conquer the white LED market. With a footprint of 3.5x3.5mm, the TL1L4-WH0 from Toshiba is tiny and benefits of the last package innovations like the sintering and a SMD leadframe with ceramic substrate and take full benefit of strong innovations. The TL1L4 LED are produced on a cheap 8” silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitate by a gold-free smart bonding process. A significant work has been done on the epitaxial layer in GaN to enhance the brightness. In 18 months, the brightness has been multiplied by 2. The optimization of the GaN epitaxy is the core of this amazing improvement. Moreover, all the manufacturing process has been enhanced to reach this brightness. Today the Toshiba white LEDs are similar to the last sapphire LEDs with a vertical thin film with via structure. The report includes a detailed technology and a cost analysis describing the innovations of Toshiba and a comparison with the first generation Toshiba LED. LED on silicon can now compete against LED on Sapphire.

1. DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not
bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The
quoted trademarks are property of their owners.
© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 1
Electronic Costing & Technology Experts
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44200 Nantes – France Phone : +33 (0) 240 180 916 email : info@systemplus.fr
June 2015 – Version 1 – Written by Sylvain Hallereau

2. Toshiba TL1L4-WH0 - LED
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Glossary
1. Overview / Introduction 4
– Executive Summary
– Reverse Costing Methodology
2. Companies Profile 9
– Toshiba Profile
3. TH1L1-LW1 Characteristics 12
– TH1L1-LW1 Characteristics
4. Physical Analysis 16
Package
– Physical Analysis Methodology
– Package Views & Dimensions
– Package Opening
– Package X-Ray
– Package Cross-Section
– Phosphor
– Protective diode
LED Die
– LED Views & Dimensions
– Cathode
– Anode
– Epitaxy
– LED Thickness
– LED Characteristics
Comparison TL1L4 and TL1F1
5. Manufacturing Process Flow 64
– Global Overview
– LED Fabrication Unit
– LED Process Flow
– Package Fabrication Unit
– Package Process Flow
6. Cost Analysis 78
– Synthesis of the cost analysis
– Main steps of economic analysis
– Yields Hypotheses
– Epitaxy Step
– LED Epitaxy Cost
– LED Front-End Cost
– LED Wafer Cost
– LED Cost per process steps
– LED Equipment Cost per Family
– LED Material Cost per Family
– Back-End : Probe and cleaving Cost
– Packaging Cost
– Packaging Cost
– Final Assembly Cost
– Component Cost
7.Estimation Price 101
– Price definitions
– Manufacturers financial ratios
– Binning Impact on Manufacturing Price
– Ideal manufacturer Price
– Manufacturing Price with Binning Yield
Contact 107

3. Toshiba TL1L4-WH0 - LED
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• This full Reverse Costing study has been conducted in order to give insight on technology data and
manufacturing cost of the TL1L4-WH0 LED from Toshiba. The TL1L4-WH0 LED component is a LED in
GaN manufactured on a 200mm Silicon wafer.
• The TL1L4-WH0 contains 1 LED die of 1.93 sq mm in a 3.5x3.5mm SMD LED with ceramic substrate.
The LED is attached by a silver sintering.
• We assumed that Toshiba designed the GaN on Si LED and that the manufacturing of the LED die is
done in Japan. We assumed that the ceramic package is done by a subcontractor in China.

4. Toshiba TL1L4-WH0 - LED
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• The LED die is assembled with a silver
sintering on a leadframe package.
• Package Toshiba 4-4P1A
• 3 gold wire bondings are performed.
• Dimension: 3.5 x 3.5x 2mm
Lateral view of the package
Top view of the package with the phosphor gel on the LED
Bottom view of the package

5. Toshiba TL1L4-WH0 - LED
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6. Toshiba TL1L4-WH0 - LED
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7. Toshiba TL1L4-WH0 - LED
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8. Toshiba TL1L4-WH0 - LED
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Epitaxial
Wafer
•Pattern GaN and
etching Lithography 1
Epitaxial
Wafer
Epitaxial
Wafer
Drawing not to Scale
Edge of the die
Epitaxial wafer
Epitaxial layer
PadCathode

9. Toshiba TL1L4-WH0 - LED
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10. Toshiba TL1L4-WH0 - LED
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11. Toshiba TL1L4-WH0 - LED
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Reverse costing analysis represents the best cost/price evaluation given the publically available data, and estimates
completed by industry experts.
Given the hypothesis presented in this analysis, the major sources of correction would lead to a +/- 10% correction on the
manufacturing cost (if all parameters are cumulated).
These results are open for discussion. We can reevaluate this circuit with your information. Please contact us:
• Consulting and Specific Analysis
– North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.
Email: laferriere@yole.fr
– Japan: Yutaka Katano, General Manager, Yole Japan & President, Yole K.K.
Email: katano@yole.fr
– RoW: Jean-Christophe Eloy, President & CEO, Yole Développement
Email: eloy@yole.fr
• Report business
– North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.
Email: laferriere@yole.fr
– Europe: Fayçal El Khamassi, Headquarter Sales Coordination & Customer Service
Email: khamassi@yole.fr
– Japan & Asia: Takashi Onozawa, Sales Asia & General Manager, Yole K.K.
Email: onozawa@yole.fr
– Korea: Hailey Yang, Business Development Manager, Korean Office
Email: yang@yole.fr
• Financial services
– Jean-Christophe Eloy, CEO & President
Email: eloy@yole.fr
• General
– Email: info@yole.fr