The document is a device modeling report that provides details on modeling and simulating the electrical characteristics of a SiC Schottky Barrier Diode. It includes the circuit configurations and SPICE model parameters used to model the diode. It then shows the results of simulations of the diode's forward and reverse current characteristics and junction capacitance and compares the simulations to manufacturer measurement data, finding good agreement.
SPICE MODEL of SCS120KE2 (Professional Model) in SPICE PARK
1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS120KE2
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL
2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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R2
100MEG
NC
U1
SCS120KE2_P
R1
0.01m
V1
0Vdc
0
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit