SPICE MODEL of CM450HA-5F (Professional+FWDS Model) in SPICE PARK

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SPICE MODEL of CM450HA-5F (Professional+FWDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Technology

Device Modeling Report

COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: CM450HA-5F
MANUFACTURER: MITSUBISHI
*REMARK: Free-Wheeling Diode (Standard Model)

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Transfer Characteristics

Circuit Simulation result

1.0KA

0.8KA

0.6KA

0.4KA

0.2KA

0A
0V 2V 4V 6V 8V 10V
I(U1:C)
V_VGE

Evaluation circuit

U1
CM450HA-5F
VCE
10Vdc
VGE
15Vdc

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Comparison Graph

Circuit Simulation Result

1000
Measurement

Simulation
COLLECTOR CURRENT, IC, (A)

800

600

400

200

0
0 2 4 6 8 10

GATE-EMITTER VOLTAGE, VGE, (V)

Simulation Result

Test condition: VCE = 10 V

VGE (V)
IC (A) Error (%)
Measurement Simulation
50 4.700 4.751 1.09
100 4.850 4.863 0.26
200 5.050 5.027 -0.46
400 5.250 5.272 0.41
600 5.450 5.470 0.37
800 5.600 5.645 0.80

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Fall Time Characteristics

Circuit Simulation result

500A

400A

300A

200A

100A

0A
2us 3us 4us 5us 6us 7us 8us 9us 10us 12us
I(RL)
Time

Evaluation circuit

RL
Rg 0.219
U1
V1 = 0 CM450HA-5F
V2 = 10 5.6
TD = 0 V1
TR = 10n VCE
TF = 10n 100Vdc
PW = 3u
PER = 20u

0

Test condition IC=450 (A), VCC=100(V)

Parameter Unit Measurement Simulation Error
tf ns 500.000 500.257 0.051

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Gate Charge Characteristics

Circuit Simulation result

20V

15V

10V

5V

0V
0 1.0u 2.0u 3.0u 4.0u 5.0u
V(W1:1)
Time*1mA

Evaluation circuit

V2

0

I1
U1 D2
CM450HA-5F Dbreak 450

I1 = 0 W1
I2 = 1m +
TF = 10n V3
TR = 10n -
TD = 0 I2 W
PER = 500m IOFF = 100uA 100
PW = 5m ION = 0A

0

Test condition: VCC=450 (V), IC=100(A) ,VGE=10(V)

Parameter Unit Measurement Simulation Error(%)
Qge nc 500.000 501.613 0.323
Qgc nc 750.000 714.888 -4.682
Qg nc 1760.000 1810.800 2.886

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Saturation Characteristics

Circuit Simulation result

2.0V

1.5V

1.0V

0.5V

0V
0A 0.2KA 0.4KA 0.6KA 0.8KA 1.0KA
V(U1:C)
I_IC

Evaluation circuit

U1
CM450HA-5F IC
0Adc
VGE
15Vdc

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Comparison Graph

Circuit Simulation Result

2
Measurement
SATURATION VOLTAGE, VCE(sat), (V)

Simulation
COLLECTOR-EMITTER

1.5

1

0.5

0
0 200 400 600 800 1000

COLLECTOR-CURRE NT, IC, (A)

Simulation Result

Test condition: VGE = 15 V

VCE (V)
Ic(A) Error (%)
Measurement Simulation
100 0.900 0.923 2.50
200 1.050 1.033 -1.61
400 1.200 1.190 -0.82
600 1.270 1.272 0.18
800 1.300 1.341 3.12
900 1.320 1.374 4.08

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Output Characteristics

Circuit Simulation result

1.0KA

VGE=15 5.75
V
0.8KA
10
8
6 5.5
0.6KA

0.4KA
5.25

0.2KA 5.0

4.75
4.5
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(U1:C)
V_VCE

Evaluation circuit

VCE
U1 10Vdc
CM450HA-5F

VGE
10Vdc

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Forward Current Characteristic

Circuit Simulation Result

10KA

1.0KA

100A

10A
0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(Vsense)
V(EC)

Evaluation Circuit

Vsense
EC
V1
0Vdc

0Vdc
V2
U1
CM450HA-5F

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Comparison Graph

Circuit Simulation Result

1.E+04
Measurement
Simulation
EMITTER CURRENT, IE, (A)

1.E+03

1.E+02

1.E+01
0.6 0.8 1 1.2 1.4 1.6 1.8

EMITTER-COLLECTOR VOLTAGE, VEC, (V)

Simulation Result

VEC(V)
IE(A) %Error
Measurement Simulation
10 0.740 0.732 -1.14
20 0.795 0.801 0.72
50 0.900 0.914 1.59
100 1.020 1.026 0.58
200 1.170 1.165 -0.41
500 1.430 1.416 -0.96
1000 1.700 1.708 0.46

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Reverse Recovery Characteristics

Circuit Simulation result

500A

250A

0A

-100A
5.0us 6.0us 7.0us 8.0us
I(FWD)
Time

Evaluation circuit

L2
1 2

103nH

U2
CM450HA-5F

IC = 450
1500uH
VCE
FWD 2 1 100
L1

Rg
U1
V1 = -10 CM450HA-5F
V2 = 10 5.6
TD = 5u V1
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u

0

Test condition: VCC=100 (V), IC=450(A) ,VGE=+10(V)

Parameter Unit Measurement Simulation Error(%)
trr nsec 200.000 179.646 -10.18
Irr A 70.000 70.073 0.10

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

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SPICE MODEL of CM450HA-5F (Professional+FWDS Model) in SPICE PARK

1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: CM450HA-5F MANUFACTURER: MITSUBISHI *REMARK: Free-Wheeling Diode (Standard Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

2. Transfer Characteristics Circuit Simulation result 1.0KA 0.8KA 0.6KA 0.4KA 0.2KA 0A 0V 2V 4V 6V 8V 10V I(U1:C) V_VGE Evaluation circuit U1 CM450HA-5F VCE 10Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

3. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation COLLECTOR CURRENT, IC, (A) 800 600 400 200 0 0 2 4 6 8 10 GATE-EMITTER VOLTAGE, VGE, (V) Simulation Result Test condition: VCE = 10 V VGE (V) IC (A) Error (%) Measurement Simulation 50 4.700 4.751 1.09 100 4.850 4.863 0.26 200 5.050 5.027 -0.46 400 5.250 5.272 0.41 600 5.450 5.470 0.37 800 5.600 5.645 0.80 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

4. Fall Time Characteristics Circuit Simulation result 500A 400A 300A 200A 100A 0A 2us 3us 4us 5us 6us 7us 8us 9us 10us 12us I(RL) Time Evaluation circuit RL Rg 0.219 U1 V1 = 0 CM450HA-5F V2 = 10 5.6 TD = 0 V1 TR = 10n VCE TF = 10n 100Vdc PW = 3u PER = 20u 0 Test condition IC=450 (A), VCC=100(V) Parameter Unit Measurement Simulation Error tf ns 500.000 500.257 0.051 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

5. Gate Charge Characteristics Circuit Simulation result 20V 15V 10V 5V 0V 0 1.0u 2.0u 3.0u 4.0u 5.0u V(W1:1) Time*1mA Evaluation circuit V2 0 I1 U1 D2 CM450HA-5F Dbreak 450 I1 = 0 W1 I2 = 1m + TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 100 PW = 5m ION = 0A 0 Test condition: VCC=450 (V), IC=100(A) ,VGE=10(V) Parameter Unit Measurement Simulation Error(%) Qge nc 500.000 501.613 0.323 Qgc nc 750.000 714.888 -4.682 Qg nc 1760.000 1810.800 2.886 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

6. Saturation Characteristics Circuit Simulation result 2.0V 1.5V 1.0V 0.5V 0V 0A 0.2KA 0.4KA 0.6KA 0.8KA 1.0KA V(U1:C) I_IC Evaluation circuit U1 CM450HA-5F IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

7. Comparison Graph Circuit Simulation Result 2 Measurement SATURATION VOLTAGE, VCE(sat), (V) Simulation COLLECTOR-EMITTER 1.5 1 0.5 0 0 200 400 600 800 1000 COLLECTOR-CURRE NT, IC, (A) Simulation Result Test condition: VGE = 15 V VCE (V) Ic(A) Error (%) Measurement Simulation 100 0.900 0.923 2.50 200 1.050 1.033 -1.61 400 1.200 1.190 -0.82 600 1.270 1.272 0.18 800 1.300 1.341 3.12 900 1.320 1.374 4.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

8. Output Characteristics Circuit Simulation result 1.0KA VGE=15 5.75 V 0.8KA 10 8 6 5.5 0.6KA 0.4KA 5.25 0.2KA 5.0 4.75 4.5 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(U1:C) V_VCE Evaluation circuit VCE U1 10Vdc CM450HA-5F VGE 10Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

9. Forward Current Characteristic Circuit Simulation Result 10KA 1.0KA 100A 10A 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(Vsense) V(EC) Evaluation Circuit Vsense EC V1 0Vdc 0Vdc V2 U1 CM450HA-5F 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

10. Comparison Graph Circuit Simulation Result 1.E+04 Measurement Simulation EMITTER CURRENT, IE, (A) 1.E+03 1.E+02 1.E+01 0.6 0.8 1 1.2 1.4 1.6 1.8 EMITTER-COLLECTOR VOLTAGE, VEC, (V) Simulation Result VEC(V) IE(A) %Error Measurement Simulation 10 0.740 0.732 -1.14 20 0.795 0.801 0.72 50 0.900 0.914 1.59 100 1.020 1.026 0.58 200 1.170 1.165 -0.41 500 1.430 1.416 -0.96 1000 1.700 1.708 0.46 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

11. Reverse Recovery Characteristics Circuit Simulation result 500A 250A 0A -100A 5.0us 6.0us 7.0us 8.0us I(FWD) Time Evaluation circuit L2 1 2 103nH U2 CM450HA-5F IC = 450 1500uH VCE FWD 2 1 100 L1 Rg U1 V1 = -10 CM450HA-5F V2 = 10 5.6 TD = 5u V1 TR = 10n TF = 10n PW = 4.998u PER = 100u 0 Test condition: VCC=100 (V), IC=450(A) ,VGE=+10(V) Parameter Unit Measurement Simulation Error(%) trr nsec 200.000 179.646 -10.18 Irr A 70.000 70.073 0.10 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

SPICE MODEL of CM450HA-5F (Professional+FWDS Model) in SPICE PARK

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SPICE MODEL of CM450HA-5F (Professional+FWDS Model) in SPICE PARK