The document summarizes a high-side power switch component. It includes a block diagram showing an N-channel MOSFET power transistor with input, enable, and output pins. It describes the characteristics of the input pin, enable pin, on-state resistance, and turn on/off timing. Simulation results are shown comparing the component's behavior to measurements for various operating conditions.

1. Smart High-Side Power Switch
Part number: BTS5016-1EKB
Draft V.1
Copyright (C) Bee Technologies Inc. 2012 1

2. INDEX
• Block Diagram
• Characteristics
– INput-Pin
– DEN-Pin
– Ron (ON-state resistance)
– Turn ON/OFF
• Application Circuit
Copyright (C) Bee Technologies Inc. 2012 2

3. Block Diagram
INput channel; Voltage Supply;
Input signal for Battery voltage
channel activation
Diagnostic Enable;
Digital signal to
N-channel
enable/disable
power MOSFET
OUTput
Sense;
Sense current of the GrouND;
selected channel Ground connection
• The power transistor is built by an N-channel power MOSFET
Copyright (C) Bee Technologies Inc. 2012 3

4. Characteristics
• INput-Pin
• DEN-Pin
• Ron (ON-state resistance)
• Turn ON/OFF
Copyright (C) Bee Technologies Inc. 2012 4

5. INput-Pin(1/3)
VBAT R IN
IN
VS
1 3 .5 V 4 .7 k
U 1 B TS5016
O U T
R D EN 1 4 VBAT
D EN 2 IN VS 5 O U T
D EN OU T 6
V+
4 .7 k 3 IS 7 R PD C 2
V1 GN D TAM B R IS C 1 100p
4 .7 k V+
V1 = 0V 1 .2 k 100n IC = 0
V2 = 5V VD EN IC = 0
TD = 0 0V R L
TF = 1s 2
TR = 1s R G N D D 1 0
PW = 10n 1k D m od
PER = 2s
R IS O
GN D
V-
1G
0 V-
• Test Condition: VS=13.5V and RL=2Ω
• Analysis Type: Transient
• Simulation result and Comparison table show in next page
Copyright (C) Bee Technologies Inc. 2012 5

6. INput-Pin(2/3)
Copyright (C) Bee Technologies Inc. 2012 6

7. INput-Pin(3/3)
Measurement Simulation %Error
VIN(L) (V) 0.800[Max] 1.470 83.76
• Comparison Table VIN(H) (V) 2.000[Min] 1.608 -19.60
VIN(HYS) (mV) 250.000 201.017 -19.59
Copyright (C) Bee Technologies Inc. 2012 7

8. DEN-Pin(1/3)
VBAT R IN
IN
VS
1 3 .5 V 4 .7 k
U 1 B TS5016
O U T
R D EN 1 4 VBAT
D EN 2 IN VS 5 O U T
D EN OU T 6
V IN 4 .7 k 3 IS 7 R PD C 2
V+ GN D TAM B R IS C 1 100p
5V 4 .7 k V+
VD EN 1 .2 k 100n IC = 0
IC = 0
V1 = 0V R L
V2 = 5V 2
TD = 0 R G N D D 1 0
TF = 1s 1k D m od
TR = 1s
PW = 10n
R IV- O
S
PER = 2s
GN D
1G
0 V-
• Test Condition: VS=13.5V and RL=2Ω
• Analysis Type: Transient
• Simulation result and Comparison table show in next page
Copyright (C) Bee Technologies Inc. 2012 8

9. DEN-Pin(2/3)
Copyright (C) Bee Technologies Inc. 2012 9

10. DEN-Pin(3/3)
Measurement Simulation %Error
VDEN(L) (V) 0.800[Max] 3.392 324.00
VDEN(H) (V) 2.000[Min] 3.593 79.65
• Comparison Table
VDEN(HYS) (mV) 250.000 200.896 -19.64
Copyright (C) Bee Technologies Inc. 2012 10

11. Ron (ON-state resistance)(1/3)
Ron=(VS-
VBAT
VOUT)/IL
R IN
IN
VS U 1 BTS 5016
1 3 .5 V 4 .7 k R D EN 1 4 VBAT
D EN 2 IN VS 5 O U T
D EN O U T 6
4 .7 k 3 IS 7
G N D TA M B R 3
1 .2 k
V IN VD EN
4 .5 V 0V
0 IL
R G N D D 1 10A
1k D MO D
R IS O
G N D
1G
0
• Test Condition: IL=10A, VIN=4.5V and VS=13.5V
• Analysis Type: Transient
• Simulation result and Comparison table show in next page
Copyright (C) Bee Technologies Inc. 2012 11

12. Ron (ON-state resistance)(2/3)
Copyright (C) Bee Technologies Inc. 2012 12

13. Ron (ON-state resistance)(3/3)
Measurement Simulation %Error
RDS(on)[mΩ] 16.000 16.003 0.02
• Comparison Table
Copyright (C) Bee Technologies Inc. 2012 13

14. Turn ON/OFF(1/4)
VIN
VBAT R IN
IN
VS
1 3 .5 V 4 .7 k
U 1 B TS5016
VOUT
O U T
R D EN 1 4 VBAT
D EN 2 IN VS 5 O U T
D EN OU T 6
4 .7 k 3 IS 7 R PD C 2
V1 GN D TAM B R IS C 1 100p
4 .7 k
V1 = 0V 1 .2 k 100n IC = 0
V2 = 5V VD EN IC = 0
T D = 0 .0 5 m 0V R L
TF = 10u 2
TR = 10u R G N D D 1 0
P W = 0 .6 m 1k D m od
PER = 1m
R IS O
GN D
1G
0
• Test Condition: VS=13.5V and RL=2Ω
• Analysis Type: Transient
• Simulation result and Comparison table show in next page
Copyright (C) Bee Technologies Inc. 2012 14

15. Turn ON/OFF(2/4)
VIN
VOUT
Copyright (C) Bee Technologies Inc. 2012 15

16. Turn ON/OFF(3/4)
8. 0V
6. 0V
4. 0V
2. 0V
SEL > >
- 2. 0V
V( I N, 0 )
20V
15V
10V
5V
0V
- 5V
1 . 0 ms 1 . 2 ms 1 . 4 ms 1 . 6 ms 1 . 8 ms 2 . 0 ms
V( OUT, GND)
Ti me
• Figure 9 Switching a Resistive Load Timing (Page 15 from data sheet)
Copyright (C) Bee Technologies Inc. 2012 16

17. Turn ON/OFF(4/4)
Measurement Simulation %Error
dV/dton(V/us) 0.250 0.255 2.00
dV/dtoff(V/us) 0.250 0.247 -1.20
∆dV/dt(V/us) 0.000 0.008 -
ton (us) 100.000 89.842 -10.16
toFF (us) 100.000 104.194 4.19
• Comparison Table ∆tsw (us) -10.000 14.352 -
ton_delay (us) 60.000 36.525 -39.13
toff_delay (us) 60.000 53.778 -10.37
Copyright (C) Bee Technologies Inc. 2012 17