More Related Content More from Visual Cognition and Modeling Lab (20) Sligte20081. Are There Multiple Visual Short-term Memory Stores? Sligte, Scholte, and Lamme (2008) 報告者:胡元 3. 4 Luck, S. J., & Vogel, E. K. (1997). The capacity of visual working memory for features and conjunctions. Nature, 390(6657), 279-280. Luck and Vogel (1997) 實驗 a 7. Lepsienand Nobre (2007) Cue + 圖片,增強 object-specificcortex的活動。 (fragile VSTM) Lepsien, J., & Nobre, A. C. (2007). Attentional modulation of object representations in working memory. Cerebral Cortex, 17(9), 2072. 15. 實驗一結果:Representationallimits in VSTM K= (hit rate–0.5+ correct rejection rate–0.5)*N representational capacity 的估計值 Cowan, N. (2001). The magical number 4 in short-term memory: A reconsideration of mental storage capacity. Behavioral and brain sciences, 24(01), 87-114. 23. 實驗二:Stability of VSTM representation 三種Mask display(無, uniform display of light, pattern mask) * 三種cue condition (iconic, retro, post) * 二種afterimage強度 (強、弱) 29. 實驗二結果:Stability of VSTM representation Iconic memory受light mask影響 -> iconic memory需在retina上有持續的激發。 2)Fragile VSTM受pattern mask影響 -> fragile VSTM需在視覺皮質和顳葉有持續的激發。 30. 實驗三:Influence of perceptual organization on change detection Counter chunking可能造成的影響:當item所處的context改變,會使提取變差。 -> post cue較iconic和retro cue差之因? 32. 實驗三:Influence of perceptual organization on change detection 二種cue condition (retro, post) * 三種perceptual organization(context +、-、0) 45. 實驗四結果:Capacity of VSTM for complex object Fragile和robust VSTM的容量和刺激特徵複雜度有關。(Alvarez and Cavanagh, 2004; Eng, Chen, & Jiang, 2005; Olsson and Poom, 2005) 47. 實驗五:Life time of VSTM representations 1000 ms 將cue延宕在memory array消失後5.5秒,觀察retro-cue的表現是否會和post-cue相同 ->fragile VSTM的duration 49. 實驗五:Life time of VSTM representations 二種cue condition (retro, post) * 四種ISI(retro-cue: 1000, 2500, 4000, 5500ms; Post-cue: 900, 2400, 3900, 5400ms) 53. 實驗五:Life time of VSTM representations Retro-cue和post-cue的capacity有顯著的差別。 t(19)=7.92m ; p<.001 58. 一、視覺資訊處理的三階段:Fragile form of VSTM 持續時間較長 (4秒) (2) 有capacity限制,但較robust VSTM高。刺激的複雜度也會影響capacity。 (3) 受和memory array相似pattern mask影響,但不受light mask影響。