1. The document discusses various topics related to MOSFETs including short channel effects, subthreshold leakage, tunneling, and hot carrier effects.
2. Equations are provided for threshold voltage as a function of channel length and drain induced barrier lowering. Approximations are made for subthreshold swing and drain current.
3. Mechanisms of hot carrier injection such as band-to-band tunneling and Fowler-Nordheim tunneling are explained. Accumulation of trapped charge in the gate oxide and at the semiconductor-oxide interface can lead to threshold voltage shifts over time.