Unit-2
Thyristor Triggering Circuits
EE-321 N
Lecture-8
Thyristor Gate Characteristics
Typical Switching Arrangement for
SCR
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IG
Introduction
• A thyristor can be triggered by the application of
+VG and hence a +IG supplied from a gate drive
circuit as shown
• However, the choice of (VG , IG) is not restricted to
a particular value, rather it varies over a wide
range
• It depends on the gate characteristics of the
device as shown next
• Any operating point (VG,IG) within the
safe/preferred gate drive area can be selected
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Typical Gate Characteristics of SCR
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t
u
v’t’
v
u’
Explanation
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• Above characteristics show the variation of VG
as a function of IG
• Some authors refer to this as characteristics
that of a diode b’coz G-K junction is a pn
junction
• The preferred gate drive area is mtt’uu’vv’m
which is bounded by the curves 1 to 5
Contd...
• Curves 1 & 2 correspond to the max possible
spread of the characteristics of the thyristor of
the same type. This is due to inadvertent
difference in doping of p and n layers
• Curve 3 represents a constant value of the
maximum permissible gate power dissipation
PGM
• Lines 4 & 5 outline the max limits for gate
voltage VGM and max gate current IGM
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Contd...
• VGD is the minimum gate voltage below which
a thyristor cannot be triggered at any
temperature (normally up to 100 °C)
• If the firing ckt generates a +ve gate signal
before the desired instant of triggering, it
should be ensured that it is < VGD. Similarly, all
noise signals should be < VGD
• Rectangle mnop is the area of unsuccessful
triggering and is specified by manufacturers
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Contd...
• For lower temperature, VGT and IGT increase
and therefore the size of the rectangle mnop
increases
• It should also be ensured that the gate circuit
load line should pass through the safe drive
area
• Most preferred zone is close to curve 3 which
in turn ↑s di/dt capability, minimizes turn ON
time and ↓s switching losses
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Design Considerations
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Next Turn
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L8 thyristor gate characteristics

  • 1.
  • 2.
  • 3.
    Typical Switching Arrangementfor SCR 16-Oct-12 EE-321N, Lec-8 3 IG
  • 4.
    Introduction • A thyristorcan be triggered by the application of +VG and hence a +IG supplied from a gate drive circuit as shown • However, the choice of (VG , IG) is not restricted to a particular value, rather it varies over a wide range • It depends on the gate characteristics of the device as shown next • Any operating point (VG,IG) within the safe/preferred gate drive area can be selected 416-Oct-12 EE-321N, Lec-8
  • 5.
    Typical Gate Characteristicsof SCR 16-Oct-12 EE-321N, Lec-8 5 t u v’t’ v u’
  • 6.
    Explanation 616-Oct-12 EE-321N, Lec-8 •Above characteristics show the variation of VG as a function of IG • Some authors refer to this as characteristics that of a diode b’coz G-K junction is a pn junction • The preferred gate drive area is mtt’uu’vv’m which is bounded by the curves 1 to 5
  • 7.
    Contd... • Curves 1& 2 correspond to the max possible spread of the characteristics of the thyristor of the same type. This is due to inadvertent difference in doping of p and n layers • Curve 3 represents a constant value of the maximum permissible gate power dissipation PGM • Lines 4 & 5 outline the max limits for gate voltage VGM and max gate current IGM 16-Oct-12 EE-321N, Lec-8 7
  • 8.
    Contd... • VGD isthe minimum gate voltage below which a thyristor cannot be triggered at any temperature (normally up to 100 °C) • If the firing ckt generates a +ve gate signal before the desired instant of triggering, it should be ensured that it is < VGD. Similarly, all noise signals should be < VGD • Rectangle mnop is the area of unsuccessful triggering and is specified by manufacturers 16-Oct-12 EE-321N, Lec-8 8
  • 9.
    Contd... • For lowertemperature, VGT and IGT increase and therefore the size of the rectangle mnop increases • It should also be ensured that the gate circuit load line should pass through the safe drive area • Most preferred zone is close to curve 3 which in turn ↑s di/dt capability, minimizes turn ON time and ↓s switching losses 16-Oct-12 EE-321N, Lec-8 9
  • 10.
  • 11.
  • 12.