SPICE MODEL of 1SS250 (Standard Model) in SPICE PARK

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SPICE MODEL of 1SS250 (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Technology

Device Modeling Report

COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS250
MANUFACTURER: TOSHIBA

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

-1-

DIODE MODEL PARAMETERS

PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

-2-

Forward Current Characteristic

Circuit Simulation Result

1.0A

100mA

10mA

1.0mA

100uA

10uA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1
0Vdc D1
D1SS250

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

-3-

Comparison Graph

Circuit Simulation Result

Simulation Result

Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.00001 0.390 0.382 -2.05
0.00002 0.420 0.412 -1.90
0.00005 0.450 0.452 0.44
0.0001 0.480 0.483 0.63
0.0002 0.510 0.513 0.59
0.0005 0.550 0.553 0.55
0.001 0.580 0.584 0.69
0.002 0.610 0.615 0.82
0.005 0.660 0.659 -0.15
0.01 0.700 0.694 -0.86
0.02 0.740 0.734 -0.81
0.05 0.810 0.804 -0.74
0.1 0.880 0.884 0.45

All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

-4-

Capacitance Characteristic

Circuit Simulation Result

1.6p

1.4p

1.2p

1.0p

0.8p

0.6p

0.4p

0.2p

0
500mV 1.0V 10V 100V
I(V2)/(200V/1u)
V(N11360)
Evaluation Circuit

V2

0Vdc

V2 = 200 V1
V1 = 0 D1
TD = 0 D1SS250
TR = 1us
TF = 20ns
PW = 20us
PER = 10us

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

-5-

Comparison Graph

Circuit Simulation Result

Simulation Result

Ct (pF)
Vrev (V) %Error
Measurement Simulation
0.5 1.250 1.237 -1.04
1 1.200 1.185 -1.25
2 1.125 1.114 -0.98
5 1.025 1.038 1.27
10 0.950 0.975 2.63
20 0.870 0.892 2.53
50 0.770 0.780 1.30
100 0.700 0.682 -2.57

All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

-6-

Reverse Recovery Characteristic

Circuit Simulation Result

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
19.88us 19.96us 20.04us 20.12us 20.20us 20.28us
I(R1)
Time
Evaluation Circuit

R1

50

V1 = -9.4V V1 D1
V2 = 10.7V 1SS250
TD = 32ns
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us

0

Compare Measurement vs. Simulation

Measurement Simulation %Error
trj ns 32.80 32.52 -0.83

All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

-7-

Reverse Recovery Characteristic Reference

Measurement

Trj =32.8(ns)
Trb= 39.2(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50

Example

Relation between trj and trb

All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

-8-

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SPICE MODEL of 1SS250 (Standard Model) in SPICE PARK

1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD PART NUMBER: 1SS250 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-

2. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-

3. Forward Current Characteristic Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 100uA 10uA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc D1 D1SS250 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-

4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.00001 0.390 0.382 -2.05 0.00002 0.420 0.412 -1.90 0.00005 0.450 0.452 0.44 0.0001 0.480 0.483 0.63 0.0002 0.510 0.513 0.59 0.0005 0.550 0.553 0.55 0.001 0.580 0.584 0.69 0.002 0.610 0.615 0.82 0.005 0.660 0.659 -0.15 0.01 0.700 0.694 -0.86 0.02 0.740 0.734 -0.81 0.05 0.810 0.804 -0.74 0.1 0.880 0.884 0.45 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-

5. Capacitance Characteristic Circuit Simulation Result 1.6p 1.4p 1.2p 1.0p 0.8p 0.6p 0.4p 0.2p 0 500mV 1.0V 10V 100V I(V2)/(200V/1u) V(N11360) Evaluation Circuit V2 0Vdc V2 = 200 V1 V1 = 0 D1 TD = 0 D1SS250 TR = 1us TF = 20ns PW = 20us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-

6. Comparison Graph Circuit Simulation Result Simulation Result Ct (pF) Vrev (V) %Error Measurement Simulation 0.5 1.250 1.237 -1.04 1 1.200 1.185 -1.25 2 1.125 1.114 -0.98 5 1.025 1.038 1.27 10 0.950 0.975 2.63 20 0.870 0.892 2.53 50 0.770 0.780 1.30 100 0.700 0.682 -2.57 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-

7. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.88us 19.96us 20.04us 20.12us 20.20us 20.28us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4V V1 D1 V2 = 10.7V 1SS250 TD = 32ns TR = 10ns TF = 10ns PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 32.80 32.52 -0.83 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-

8. Reverse Recovery Characteristic Reference Measurement Trj =32.8(ns) Trb= 39.2(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-

SPICE MODEL of 1SS250 (Standard Model) in SPICE PARK

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SPICE MODEL of 1SS250 (Standard Model) in SPICE PARK