HNT2510MT3R3 SPEC 20141201

1. ●Isat for Inductance drop30% from its value current 2 sec for Max.
●Isat for Inductance drop45% from its value momentary 1sec current typical.
●Irms for a 40℃ rise above 25℃ ambient maximum .
A B C D E F G H I J
I
t
e
m
2.5 ± 0.3 2.0 ± 0.3 1.0 MAX 0.85 REF 0.80 REF
2.61 2.14 0.96
ELECTRICAL CHARACTERISTICS (電特性要求)：
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Typ.
(實測值)
SPECIFICATION FOR APPROVED 樣品承認書
Item
項目
Spec.(mm)
(規格)
@ 1MHz,0.2V
L
0.26 Ω0.22Ω ± 30%
3.32uH3.3uH ±20%
Test Freq
I rms.
P/N (料號)：HNT2510MT3R3
MACHANCIAL DIMENSIONS (m/m)：
Marking (印字):
Item (項目) Specifications (規格) Typ. (參考值)
Storage. Temp. -40℃ to +105℃
1.6A Typ/1.4A MAX
DCR
I sat. 1.7A Typ/1.4A MAX