The document discusses power bipolar junction transistors (BJTs). It notes that power BJTs have a vertically oriented four-layer structure to increase their cross-sectional area and allow for high voltage blocking and current carrying capacity. Key layers include a heavily doped emitter, moderately doped base, lightly doped collector drift region, and highly doped collector. The drift region increases the breakdown voltage but also increases resistance. Power BJTs are used in applications like switched mode power supplies, inverters, motor controllers due to their high power handling capability.

1. By
Shaik Hedayath Basha
Assistant Professor
RMK College of Engineering and Technology
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2.  BJT is Bipolar Junction Transistor, it has three
terminals: Emitter, Base and Collector.
 The Base area smaller and is lightly doped
than Collector and Emitter.
 The Collector area less than or equal to
Emitter area.
 The Emitter area is highly doped compared
to Base and Collector
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5.  The power BJT has three terminals Collector
(C), Emitter (E) and Base (B).
 It has a vertically oriented four-layers
structure. The vertical structure uses to
increase the cross-sectional area.
 The power bipolar junction transistor (BJT)
blocks a high voltage in the off state and
high current carrying capacity in the on-
state. The power handling capacity is very
high.
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7.  It has four layers.
 The first layer is a heavily doped emitter
layer (n+).
 The second layer is moderately doped
the base layer (p).
 The third region is lightly doped collector
drift region (n-).
 The last layer is a highly doped collector
region (n+).
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8.  The drift layer (n-) increase the voltage
blocking capacity of the transistor due to the
low doping level. The width of this layer
decides the breakdown voltage. The
disadvantage of this layer is that the increase
on state voltage drops and increase on state
device resistance, which increases power
loss.
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9.  The power handling capacity of the power
transistor is very large. So, they have to
dissipate power in the form of heat.
Sometimes, heatsink uses to increase
effective area and therefore increase power
dissipation capacity. the heatsink made from
metal
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11.  It is designed to effectively manage the
power dissipation.
 To avoid Krik effect.
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12.  Krik Effect: The Krik effect occurs at high
current densities and causes a dramatic
increase in the transit time of a bipolar
transistor. This effect is due to the charge
density associated with the current density
passing through the base collector region.
 As charge density exceed in the depletion
region, the depletion region ceases to exist.
 Krik effect can be eliminated by increasing
the collector doping.
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13.  Power BJT have thick and low doped
collector region, it results in large blocking
voltage.
 It has extremely low doping densities, used
to obtain blocking voltages as large as 3000
Volts.
 It has large Active area then normal BJT, this
result in higher current capabilities.
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14. The I-V characteristic of Power BJT divides into
four regions.
 Cut-off region
 Active region
 Quasi-saturation region
 Hard saturation region
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16.  The BE and CB both junctions are reverse
bias. The base current IB=0 and collector
current IC is equal to the reverse leakage
current ICEO. The region below the
characteristic for IB=0 is cut-off region. In
this region, BJT offers large resistance to the
flow of current. Hence it is equivalent to an
open circuit.
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17.  The BE junction is forward bias and CB
junction is reverse bias. The collector
current IC increase slightly with an increase
in the voltage VCE if IB is increased. The
relation of IB and IC is, IC=βdcIB is true in the
active region.
 If BJT uses as an amplifier or as a series pass
transistor in the voltage regulator, it
operates in this region. The dynamic
resistance in this region is large. The power
dissipation is maximum
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18.  Quasi-saturation region is between the hard
saturation and active region. This region exists
due to the lightly doped drift layer. When the
BJT operates at high frequency, it is operated in
this region. Both junctions are forward bias.
 The device offers low resistance compared to
the active region. So, power loss is less. In this
region, the device does not go into deep
saturation. So, it can turn off quickly. Therefore,
we can use for higher frequency applications
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19.  The Power BJT push into the hard-saturation
region from the quasi-saturation region by
increasing the base current. This region is
also known as deep saturation region. The
resistance offers in this region is minimum. It
is even less than the quasi-saturation region.
So, when the BJT operates in this region,
power dissipation is minimum.
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20.  The device acts as a closed switch when it
operates in this region. But it needs more
time to turn off. So, this region is suitable
only for low-frequency switching application.
In this region, both junctions are forward
bias. The collector current is not
proportional to the base current, IC remains
almost constant at IC(sat) and independent
from the value of base current.
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21.  Switched Mode Power Supply (SMPS)
 Power Amplifier
 Relay and Drivers
 AC motor speed controller
 DC/AC inverter
 As series pass transistor in the regulated
power supply
 The audio amplifier in the stereo system
 Power control circuit
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