
Organization / Workplace
Brolis SemiconductorsLocation
Lithuania LithuaniaOccupation
CTO at Brolis SemiconductorsIndustry
Electronics / Computer Hardware
About
Molecular Beam Epitaxy of antimonides and arsenides with an emphasis on growth of complex mixed-group-V alloys and low-dimensional structures. Development and fabrication of room-temperature GaSb-based mid-wave infrared type-I QW lasers for wavelength range from 2 to 4 µm. Development and fabrication of high-power GaAs-based near infrared laser diodes, emitting in 0.8 - 1.1 µm. Developement of GaSb, GaAs and InP-based heterostructures with non-common anion interfaces. Specialties: epitaxial growth, semiconductor laser fabrication and design, antimonides, arsenides