• Share
  • Email
  • Embed
  • Like
  • Save
  • Private Content
PQL HiTUS Technology Summary
 

PQL HiTUS Technology Summary

on

  • 3,388 views

 

Statistics

Views

Total Views
3,388
Views on SlideShare
1,243
Embed Views
2,145

Actions

Likes
0
Downloads
4
Comments
0

5 Embeds 2,145

http://www.plasma-quest.com 2115
http://translate.googleusercontent.com 22
http://www.plasma-quest.com. 5
http://131.253.14.66 2
http://www.plasmas.org 1

Accessibility

Categories

Upload Details

Uploaded via as Microsoft PowerPoint

Usage Rights

© All Rights Reserved

Report content

Flagged as inappropriate Flag as inappropriate
Flag as inappropriate

Select your reason for flagging this presentation as inappropriate.

Cancel
  • Full Name Full Name Comment goes here.
    Are you sure you want to
    Your message goes here
    Processing…
Post Comment
Edit your comment

    PQL HiTUS Technology Summary PQL HiTUS Technology Summary Presentation Transcript

    • PQL HiTUS TECHNOLOGY SUMMARY
      • Technology Overview
      • Strategic Materials
      • Differentiators
      • Applications
      • Website: www.plasma-quest.com
      • Email : [email_address]
    • The Plasma Quest approach for the sputter deposition of thin films is based upon the paradigm of “Remote Generation”. Sputter deposition is a form of physical vapour deposition where ions of a sputter gas are created to form a plasma and these ions are then accelerated into a metallic target using an accelerating bias voltage. The target atoms are then able to scatter in the chamber and some will settle on the substrate to form a thin film coating. In a traditional magnetron deposition system, the plasma is generated from the electric field from the target bias and then amplified by local magnets. The plasma quest approach generates a remote plasma in a side arm adjacent to the deposition chamber referred to as the plasma launch system (PLS). The PLS generates a high density plasma with 1013 ions/cc but crucially, the ion energy is low (<10eV). This differentiates our process from both Ion Beam Source and Magnetron thin film coating systems. Importantly, the ions generated from the PLS cannot sputter any material until the application of a bias on the target, enabling a high degree of control on the deposition variables. The plasma is then amplified and confined by using electromagnets so that there is a high density of ions above the target. 1. HiTUS Technology Overview – Part One
    • When a target bias is applied, typically a few hundred volts, the sputter deposition of the target material occurs. The ions are present over the whole of the target and hence sputtering occurs from the whole of the target, giving rise to the name HiTUS – High Target Utilisation Sputtering. Furthermore, the sputtered atoms have to pass through the plasma to reach the substrate. The atomistic interactions that occur during this phase provide many advantages to the thin film coatings that Plasma Quest deposit. Typically, the HiTUS process is able to achieve highly dense films at high deposition rates with controllable stress, high levels of adhesion at low temperatures. Read advantages for thin film deposition using HiTUS for more information regarding our differentiators. The HiTUS deposition technique is particularly well suited to the deposition of high rate thin film oxides and dielectric films. PQL operates a reactive deposition technique whereby an oxide thin film is deposited from a metallic target by the injection of a sputter gas. The reactive deposition process is very stable due to the full target erosion obtained from the HiTUS process. The reactive gas is injected very close to the substrate and the plasma enhances the interaction of the sputter species with the gas to form the appropriate oxide. This gives rise to very high rate deposition of oxides such as thin film alumina and Hafnia. Additionally, PQL use reactive deposition techniques for a number of transparent conducting oxides (TCO’s) including thin films of Indium tin oxide and aluminium doped zinc oxide. Plasma Quest has developed a number of sputter coating systems to facilitate the HiTUS approach. These range from the small-scale R&D tool the S500 R&D Coater through to the more industrial in-line coater the ILH 550. This is based on the linear geometry for the HiTUS technology. 1. HiTUS Technology Overview – Part Two
      • Metals:
      • Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr
      • Dielectrics:
      • AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO
      • (Oxy-Nitrides and sub-oxides are also possible with PQL technology)
      • Transparent Conducting Oxides:
      • Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO
      • Magnetic Materials:
      • Co, CoFe, Fe, NiFe
      2. STRATEGIC MATERIALS
      • Remotely Generated Plasma:
      • We have independent control of all process parameters including target voltage and ion current
      • Low Temperature Process:
      • Low temperature deposition for plastic or other 'delicate' substrates
      • Stable High Rate Reactive Process:
      • Virtual elimination of target poisoning since the surface of the target is uniformly eroded.
      • Stress Control:
      • Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.
      • Potential for Multilayer Devices:
      • PQL systems have the ability to deposit multilayer without breaking vacuum
      • Thick ferromagnetic targets:
      • Ability to sputter from thick ferromagnetic targets
      • Substrate plasma-cleaning:
      • Offering enhanced adhesion performance
      3. DIFFERENTIATORS
    • Flexible Electronics Transparent Conducting Oxides Magnetic Media High Mobility TFTs Photonics & Precision Optics Optical Filters Waveguide Materials Photoluminescence Devices Electroluminescence Devices Barrier Layers Protective & Wear Resistant Alternative to Wet Coatings 4. APPLICATIONS