SPICE MODEL of TRS10A65C LTspice Model (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net.Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TRS10A65C LTspie Model (Standard Model) in SPICE PARK
1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS10A65C
MANUFACTURER: TOSHIBA
REMARK: Standard Model (LTSpice Model)
2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
V1
V2
D1
DTRS10A65C
F
.dc V1 0 3 0.01
.lib DTRS10A65C.lib
V(F)
0.00V 0.25V 0.50V 0.75V 1.00V 1.25V 1.50V 1.75V 2.00V
0A
2A
4A
6A
8A
10A
I(V2)
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.5 0.955 0.950 -0.52 1 1.000 1.004 0.40 2 1.070 1.068 -0.16 5 1.240 1.240 0.00 10 1.500 1.500 0.00
5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
V(r)
100mV 1V 10V 100V 1KV
1e-011
1e-010
1e-009
I(V2)/(650/10u)
PULSE(0 650V 0 10u 500n 100u 500u)
V1
V2
0V
D1
DTRS10A65C
R
.tran 0 10u 0 1n
.lib DTRS10A65C.lib
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit