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All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
1 
Device Modeling Report 
Bee Technologies Inc. 
COMPONENTS: SiC Schottky Barrier Diode 
PART NUMBER: TRS10A65C 
MANUFACTURER: TOSHIBA 
REMARK: Standard Model (LTSpice Model)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
2 
Circuit Configuration 
DIODE MODEL PARAMETERS 
PSpice 
model 
parameter 
Model description 
IS Saturation Current 
N Emission Coefficient 
RS Series Resistance 
IKF High-injection Knee Current 
CJO Zero-bias Junction Capacitance 
M Junction Grading Coefficient 
VJ Junction Potential 
ISR Recombination Current Saturation Value 
BV Reverse Breakdown Voltage(a positive value) 
IBV Reverse Breakdown Current(a positive value) 
TT Transit Time 
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
3 
V1 
V2 
D1 
DTRS10A65C 
F 
.dc V1 0 3 0.01 
.lib DTRS10A65C.lib 
V(F) 
0.00V 0.25V 0.50V 0.75V 1.00V 1.25V 1.50V 1.75V 2.00V 
0A 
2A 
4A 
6A 
8A 
10A 
I(V2) 
Forward Current Characteristics 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
4 
Comparison Graph Circuit Simulation result 
Comparison table 
IF (A) VF (V) %Error Measurement Simulation 0.5 0.955 0.950 -0.52 1 1.000 1.004 0.40 2 1.070 1.068 -0.16 5 1.240 1.240 0.00 10 1.500 1.500 0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
5 
V(r) 
100mV 1V 10V 100V 1KV 
1e-011 
1e-010 
1e-009 
I(V2)/(650/10u) 
PULSE(0 650V 0 10u 500n 100u 500u) 
V1 
V2 
0V 
D1 
DTRS10A65C 
R 
.tran 0 10u 0 1n 
.lib DTRS10A65C.lib 
Junction Capacitance Characteristic 
Circuit Simulation result 
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 
6 
Comparison Graph Circuit Simulation result 
Comparison table 
VR (V) Cj (pF) %Error Measurement Simulation 0.1 580.000 587.900 1.36 1 505.000 511.000 1.19 10 280.000 275.000 -1.79 20 198.000 200.500 1.26 50 119.000 126.000 5.88 100 85.000 87.800 3.29 200 64.600 59.700 -7.59

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SPICE MODEL of TRS10A65C LTspie Model (Standard Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS10A65C MANUFACTURER: TOSHIBA REMARK: Standard Model (LTSpice Model)
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 V1 V2 D1 DTRS10A65C F .dc V1 0 3 0.01 .lib DTRS10A65C.lib V(F) 0.00V 0.25V 0.50V 0.75V 1.00V 1.25V 1.50V 1.75V 2.00V 0A 2A 4A 6A 8A 10A I(V2) Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.5 0.955 0.950 -0.52 1 1.000 1.004 0.40 2 1.070 1.068 -0.16 5 1.240 1.240 0.00 10 1.500 1.500 0.00
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V(r) 100mV 1V 10V 100V 1KV 1e-011 1e-010 1e-009 I(V2)/(650/10u) PULSE(0 650V 0 10u 500n 100u 500u) V1 V2 0V D1 DTRS10A65C R .tran 0 10u 0 1n .lib DTRS10A65C.lib Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) Cj (pF) %Error Measurement Simulation 0.1 580.000 587.900 1.36 1 505.000 511.000 1.19 10 280.000 275.000 -1.79 20 198.000 200.500 1.26 50 119.000 126.000 5.88 100 85.000 87.800 3.29 200 64.600 59.700 -7.59