Data sheet power transistors sanken

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Data sheet power transistors sanken

  1. 1. POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 ( July,2001)
  2. 2. C AU T I O N / WA R N I N G this publication • The information in no responsibility ishas been carefully checked and is believed to be accurate; however, assumed for inaccuracies. the right to make changes without further notice to any • Sanken reserves improvements in the performance, reliability, orproducts herein in the interest of manufacturability • • • • • • • • of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. Anti radioactive ray design is not considered for the products listed herein. This publication shall not be reproduced in whole or in part without prior written approval from Sanken.
  3. 3. Contents Transistor Selection Guide..2 Reliability.........................6 Temperature Derating in Safe Operating Area.........9 Accessories.....................9 Switching Characteristics Test Circuit....................10 Symbols and Term...........10 A1186............................11 A1215............................12 A1216............................13 A1262............................14 A1294............................15 A1295............................16 A1303............................17 A1386/A ........................18 A1488/A ........................19 A1492............................20 A1493............................21 A1494............................22 A1567............................23 A1568............................24 A1667/8.........................25 A1673............................26 A1693............................27 A1694............................28 A1695............................29 A1725............................30 A1726............................31 A1746............................32 A1859/A ........................33 A1860............................34 A1907............................35 A1908............................36 A1909............................37 A2042............................38 B1257............................39 B1258............................40 B1259............................41 B1351............................42 B1352............................43 B1382............................44 B1383............................45 B1420............................46 SANKEN POWER TRANSISTORS B1559............................47 B1560............................48 B1570............................49 B1587............................50 B1588............................51 B1647............................52 B1648............................53 B1649............................54 B1659............................55 B1685............................56 B1686............................57 B1687............................58 C2023 ...........................59 C2837 ...........................60 C2921 ...........................61 C2922 ...........................62 C3179 ...........................63 C3263 ...........................64 C3264 ...........................65 C3284 ...........................66 C3519/A ........................67 C3678 ...........................68 C3679 ...........................69 C3680 ...........................70 C3830 ...........................71 C3831 ...........................72 C3832 ...........................73 C3833 ...........................74 C3834 ...........................75 C3835 ...........................76 C3851/A ........................77 C3852/A ........................78 C3856 ...........................79 C3857 ...........................80 C3858 ...........................81 C3890 ...........................82 C3927 ...........................83 C4020 ...........................84 C4024 ...........................85 C4064 ...........................86 C4065 ...........................87 C4073 ...........................88 C4130 ...........................89 C4131 ...........................90 C4138 ...........................91 C4139 ...........................92 C4140 ...........................93 C4153 ...........................94 C4296 ...........................95 C4297 ...........................96 C4298 ...........................97 C4299 ...........................98 C4300 ...........................99 C4301 .........................100 C4304 .........................101 C4381/2 ......................102 C4388 .........................103 C4418 .........................104 C4434 .........................105 C4445 .........................106 C4466 .........................107 C5333 .........................135 C5370 .........................136 D1769 .........................137 D1785 .........................138 D1796 .........................139 D2014 .........................140 D2015 .........................141 D2016 .........................142 D2017 .........................143 D2045 .........................144 D2081 .........................145 D2082 .........................146 D2083 .........................147 D2141 .........................148 D2389 .........................149 D2390 .........................150 D2401 .........................151 C4467 .........................108 C4468 .........................109 C4495 .........................110 C4511 .........................111 C4512 .........................112 C4517/A......................113 C4518/A......................114 C4546 .........................115 C4557 .........................116 C4662 .........................117 C4706 .........................118 C4883/A......................119 C4886 .........................120 C4907 .........................121 C4908 .........................122 C5002 .........................123 C5003 .........................124 C5071 .........................125 C5099 .........................126 C5100 .........................127 C5101 .........................128 C5124 .........................129 C5130 .........................130 C5239 .........................131 C5249 .........................132 C5271 .........................133 C5287 .........................134 D2438 .........................152 D2439 .........................153 D2557 .........................154 D2558 .........................155 D2560 .........................156 D2561 .........................157 D2562 .........................158 D2589 .........................159 D2641 .........................160 D2642 .........................161 D2643 .........................162 SAH02 ........................163 SAH03 ........................164 SAP09N ......................165 SAP09P ......................166 SAP10N ......................167 SAP10P ......................168 SAP16N ......................169 SAP16P ......................170 SAP Series Application Information................171 Discontinued Parts Guide ........................176 1
  4. 4. Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 A1668 C4382 180 D2016 A1294 C3263 A1493 C3857 A1859A C4883A C5271 D2557 D2558 160 150 C4140 D2141 200 A1667 A1859 C4381 C4883 B1559 B1587 D2389 D2438 140 120 D2015 D1769 D1785 D2045 110 100 80 C3852A C3852 A1694 A1908 C4467 C5100 A1262 A1488 B1257 C3179 C3851 D1796 50 C3834 C3835 C4153 A1186 B1560 B1588 C2837 D2390 D2439 A1695 A1909 C4468 C5101 B1259 D2081 C4495 3 A2042 C4024 4 A1303 A1860 C3284 C4886 A1386A A1492 A1673 C3519A C3856 C4388 A1215 A1386 C2921 C3519 B1647 B1649 D2560 D2562 A1216 C2922 B1648 D2561 B1382 B1420 D2082 B1383 D2083 A1568 B1351 B1352 C4065 40 2 B1570 D2401 A1295 C3264 A1494 C3858 B1659 B1685 B1686 B1687 D2489 D2641 D2642 D2643 B1258 A1693 A1725 A1726 A1907 C4466 C4511 C4512 C5099 A1488A C3851A D2014 60 5 6 7 8 10 A1567 A1746 C4064 C5370 12 Collector Current IC(A) 2 C4139 C4298 C4434 C2023 C5333 250 230 Collector–Emitter Voltage VCEO(V) C5124 C4518 C4518A C5287 500 380 300 C3680 C4301 C5002 C5003 C4131 14 15 16 17 18 25
  5. 5. Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 – 130V input) VCBO(V) VCEO(V) IC (A) 250 200 MT-25 (TO220) 5 7 500 400 C3832 12 15 400 600 500 600 C3830 FM100 (TO3PF) C4296 C4297 C5271 C4073 C4418 C4662 C3890 C4130 10 18 5 7 6 10 3 MT–100 (TO3P) C4138 C3833 C5071 C4139 C4434 C4140 5 FM20 (TO220F) C4298 C5130 C4546 C4907 C3831 C5249 s Transistors for Switch Mode Power Supplies (for AC180 – 280V input) VCBO(V) IC (A) 550 3 5 600 900 (1000) VCEO(V) MT-25 (TO220) FM20 (TO220F) C5239 C4517(A) C4518(A) 10 14 C4020 800 FM100 (TO3PF) C5287 C3927 C4706 C4557 C4908 C3678 3 900 MT–100 (TO3P) C4304 5 7 C3679 C3680 C4299 C4445 C4300 C4301 3
  6. 6. Transistor Selection Guide Transistors for Audio Amplifiers s Single Transistors q Single Emitter Part No. PC(W) 2SA1725/2SC4511 30 2SA1726/2SC4512 50 VCEO(V) MT-25 (TO220) 6 MT-100 (TO3P) 75 2SA1694/2SC4467 Package 60 2SA1908/2SC5100 fT(MHz) 60 2SA1907/2SC5099 hFE(min) FM20 (TO220F) 80 2SA1693/2SC4466 IC (A) 80 FM100 (TO3PF) 120 8 MT-100 (TO3P) 50 2SA1909/2SC5101 80 140 10 2SA1673/2SC4388 85 180 15 2SA1695/2SC4468 100 140 10 2SA1492/2SC3856 130 180 15 2SA1493/2SC3857 150 20 FM100 (TO3PF) MT-100 (TO3P) 15 200 2SA1494/2SC3858 q LAPT MT-200 (2-screw mount) 17 200 (Multi emitter for High Frequency) Part No. PC(W) VCEO(V) IC (A) hFE(min) 2SA1860/2SC4886 80 2SA1186/2SC2837 100 2SA1303/2SC3284 125 2SA1386/2SC3519 130 160 2SA1386A/2SC3519A 130 180 2SA1294/2SC3263 130 230 35 2SA1215/2SC2921 150 160 50 2SA1216/2SC2922 200 180 14 10 50 q Transistors FM100 (TO3PF) MT-100 (TO3P) 50 40 40 17 200 Package 60 14 150 50 15 2SA1295/2SC3264 fT(MHz) MT-200 (2-screw mount) 35 230 with built in temperature compensation diodes for audio amplifier Part No. VCEO(V) IC (A) hFE(min) Emitter Resistor(Ω) SAP09P/SAP09N 80 150 10 5000 0.22 SAP10P/SAP10N 100 150 12 5000 0.22 SAP16P/SAP16N 4 PC(W) 150 160 15 5000 0.22
  7. 7. Transistor Selection Guide s Darlington Transistors Part No. PC(W) 2SB1686 VCEO(V) IC (A) hFE(min) fT(MHz) 100 30 2SD2642 2SB1659 100 110 2SB1685 2SB1687 6 100 2SB1587 100 60 75 2SD2438 2SB1559 80 65 150 10 50 80 2SD2439 55 15 2SB1649 85 2SD2562 2SB1560 70 50 10 55 150 2SB1647 2SD2401 15 150 2SB1570 12 70 50 55 150 2SB1648 MT-200 (2-screw mount) 45 200 2SD2561 MT-100 (TO3P) 45 130 2SD2560 FM100 (TO3PF) 45 200 100 2SD2390 MT-100 (TO3P) 80 5000 2SB1588 FM100 (TO3PF) 65 8 80 2SD2389 MT-100 (TO3P) 60 60 2SD2643 MT-25 (TO220) 60 60 2SD2641 FM20 (TO220F) 60 50 2SD2589 Package 17 70 s Temperature compensation Transistors and Driver Transistors Part No. 2SC4495 PC(W) 25 2SC4883 VCEO(V) fT(MHz) 3 500 40 60 120 Package Driver, Complement 2SA1859 180 2SC4883A 2SA1859 –2 –180 FM20 (TO220F) Driver, Complement 2SA1859A Driver, Complement 2SC4883 –150 20 Remarks Temperature compensation 150 20 2SA1859A hFE(min) 2 50 IC (A) 60 60 Driver, Complement 2SC4883A 5
  8. 8. Reliability 4. Applications Considered on Reliability The word reliablity is an abstract term which refers to the degree to which equipment or components, such as semiconductor devices, are resistant to failure. Reliability can be and is often measured quantitatively. Reliability is defined as “whether equipment or components (such as a semiconductor device) under given conditions perform the same at the end of a given period as at the beginning.” 2. Reliability Function Collector Current Ic(A) Failure Rate (λ) us SOA(Safe Operating Area) Collector-Emitter Voltage Vce(V) Figure 2 SOA Initial Failure Random or Chance Failure Wear-out Failure Time (t) Figure 1 Bath Tub Curve These three types of failure describe “bathtub curve” shown in Figure 1. Infant failures can be attributed to trouble in the production process and can be eliminated by aging befor shipment to customers, stricter control of the production process and quality control measures. Semiconductor devices such as transistors, unlike electronic equipment, take a considerable amount of time to reach the stage where wear-out failure begins to occur. And, as shown in Figure 1 (b), they also last much longer than electronic equipment. This shows that the longer they are used the more stable they actually become. The reduction that occurs in random failures can be approximated by Weibull distribution, logarithmic normal distribution, or gamma distribution, but Weibull distribution best expresses the phenomenon that occurs with transistors. 3. Quantitative Expression of Reliability While there are many ways to quantitatively express reliability, two criteria, failure rate and life span, are generally used to define the reliability of semiconductors such as transistrors. a) Failure Rate (FR) Failure rate often refers to instantaneous failures or λ (t). In general of reliability theory, however, the cumulative failure rate, or Reliability Index, is r(t) ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(1) N⋅t Where N = Net quantity used, and r(t) = Net quantitiy failed after t hours If we assign t the arbitrary F⋅R= F ⋅ R = r × 100 (%/1,000 hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(2) N In situations where the cumulative failure rate is small, failure is expressed in units of one Fit, 10-9 (failures/hours). b) Life Span(L) Life Span can be expressed in terms of average lifespan or as Mean Time Between Failure (MTBF), but assuming that random failure is shown by the Index Distribution [λ (t) = constant], then Life Span or L can be shown by the equation 1 L = ⋅ (hours)⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(3) F R 6 Loc Estimation wn Semiconductor Devices o akd Bre ary wer Po bl e wa (b) ond llo xA General Electronic Equipment or Components (a) S ec 1. Infant failure 2. Random failure 3. Wear-out failure Ma In general, there are three types of failure modes in electronic components: a) The type and specifications of our transistors and semiconductor devices vary depending on the application that will be required by their intended use. Customer should, therefore, determine which type will best suit their purposes. b) Note that high temperratures or long soldering periods must be avoided during soldering, as heat can be transmitted through external leads into the interior. This may cause deterioration if the maximum allowable temperature is exceeded. c) When using the trasistor under pulse operation or Max.Allowable inductive load, the Safe Current Operating Area (SOA) for the current and voltage must not be exceeded (Figure 2). Max. Allowable Voltage Vceo(Max) 1. Definition of Reliability d) The reliability of transistors and semiconductor devices is greatly affected by the stress of junction temperature. If we accept in general proceed in the form of Arrhenius equation, the relationship between the junction temperature Tj and lifespan L can be expressed with the following empirical formula n L = A+ B ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅(4) Tj It is, hence, very important to derate the junction temperature to assure a high reliability rate. 5. Reliability Test Sanken bases its test methods and conditions on the following standards. Tests are conducted under these or stricter conditions, The details of these are shown in Table 1. • MIL-STD-202F (Test method for electrical and electronic components) • MIL-STD-750C (Test method for semiconductor equipment) • JIS C 7021 (Endurance test and environmental test method for individual semiconductor devices) • JIS C 7022 (Endurance test and environmental test method for integrated circuits of semiconductors) 6. Quality Assurance To ensure high quality and high reliability, quality control and production process control procedures are executed from the receipt of parts through the entire production process. Our quality assurance system is shown in Figure 3.
  9. 9. Reliability Table 1: Test Methods and Conditions Details of the Testing Method LTPD(%) Continuous Operations Test Collector dissipation with maximum junction temperature is applied continuously at room temperature to judge lifespan and reliability under transistor operating conditions. *5/1000hrs Intermittent Operation Test Power equal to that used in the Continuous Operations Test is applied intermittently to test the transistor’s lifespan and reliability under on and off conditions. 5/1000hrs Test High Temperature Storage Test Low Temperature Storage Test Confirms the highest storage temperature and operating temperature of transistors. Confirms the lowest storage temperature of transistors. 5/1000hrs 5/1000hrs Moisture Resistance Test Tested at RH=85% and TA=85°C for the effects of the interaction between temperature and humidity, and the effects of surface insulation between electrodes and high temperature/high humidity. 5/1000hrs Heat Cycle Test Tested at Tstg min – Room temp. – Tstg max – Room temp. for 10 cycles (one cycle 30 min. –5 min. –30 min. –5 min.) to detect mechanical faults and characteristic changes caused by thermal expansion and shrinkage of the transistor. 5 Heat Shock Test Tested at 100°C (5 min.), 25°C (within 3 sec.), 0°C (5 min.) for 10 cycles to check for mechanical faults and characteristic changes caused by thermal expansion and shrinkage of transistor. 5 Soldering Heat Test Tested at 260 ± 5°C, 10 ± 1 sec, by dipping lead wire to 1.5mm from the seating plane in solder bath to check for characteristic changes caused by drastic temperature rises of exterior lead wire. 5 Vibrations Test Tested at amplitude 1.52mm, vibration frequency 10-55 Hz in directions of X, Y, Z, for 2 hours each (total 6 hours) to check for characteristic changes caused by vibration during operation and transportion. 5 Drop Test Tested by dropping 10 times from 75 cm height to check for mechanical endurance and characteristic changes caused by shock during handling. 5 ∗ Reliability Standard : 60% Figure 3 Quality Assurance System Material Purchasing Incoming Inspection Physical and Chemical Inspection Production Process Quality Control Production Process Control Specialized Tests for all units Marking Packing Shipping Inspection Shipment Periodical Quality Assurance Test 1. Operational Life (continuous) Test 2. Operational Life (intermittent) Test 3. High Temperature Storage Test 4. Low Temperature Storage Test 5. Moisture Resistance Test 6. Heat Cycle Test 7. Heat Shock Test 8. Soldering Heat Test 9. Vibaration Test 10. Drop Test 7
  10. 10. Reliability 7. Notes Regarding Storage, Characteristic Tests, and Handling Since reliability can be affected adversely by improper storage environment and handling methods during Characteristic tests, please observe the following cautions. a) Cautions for Storage 1. Ensure that storage conditions comply with the standard temperature (5 to 35°C) and the standard relative humidity (arround 40 to 75%) and avoid storage locations that experience extreme changes in temperature or humidity. 2. Avod locations where dust or harmful gases are present, and avoid direct sunlight. 3. Reinspect for rust in leads and solderbility that have been stored for a long time. b) Cautions for Characteristic Tests and Handling 1. When characteristic tests are carried out during inspection testing and other standard test periods, protect the transistor from surges of power from the testing device, shorts between the transistor and the heatsink c) Silicone Grease When using a heatsink, please coat the back surface of the transistor and both surfaces of the insulating plate with a thin layer of silicone grease to improve heat transfer between the transistor and the heatsink. Recommended Silicone Grease • G-746 (Shin-Etsu Chemical) • YG6260 (GE Toshiba Silicone) • SC102 (Dow Corning Toray Silicone) d) Torque when Tightening Screws Thermal resistance increases when tightening torque is small, and radiation effects are decreased. When the torque is too high, the screw can cut, the heatsink can be deformed, and/or distortion can arise in the product’s frame. To avoid these problems, Table 2 shows the recommended tightening torques for each product type. Table 2. Screw Tightening Torques Package Screw Tightening Torque MT25 (TO-220) 0.490 to 0.686 N · m (5 to 7kgf · cm) FM20 (TO-220 Full Mold) 0.490 to 0.686 N · m (5 to 7kgf · cm) MT100 (TO-3P) 0.686 to 0.822 N · m (7 to 9kgf · cm) FM100 (TO-3P Full Mold) 0.686 to 0.822 N · m (7 to 9kgf · cm) MT200 ( two-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm) 2GR ( one-point mount) 0.686 to 0.822 N · m (7 to 9kgf · cm) e) Soldering Temperature In general, the transistor is subjected to high temperatures when it is mounted on the printed circuit board, whether from flow solder from a solderbath, or, in hand operations from a soldering iron. The testing method and test conditions (JIS-C-7021 standards) for a transistor’s heat resistance during soldering are: At a distance of 1.5mm from the transistor’s main body, apply 260°C for 10 seconds, and 350°C for 3 seconds. However, please stay well within these limits and for as short a time as possible during actual soldering. 8
  11. 11. Reliability s Temperature Derating in Safe Operating Area Flange (case) temperature is typically described as 25°C, but it must be derated subject to the operating temperature. This derating curve is determined by manufacturing conditions of devices, materials used etc. and in case of a silicon transistor, breakdown voltage and DC Current Gain are significantly deteriorated in the temperature range of 260°C to 360°C. Hence, the collector current must be derated by using the derating curve in Fig.2 where the breakdown point is set at 260°C. Pc 100 lim re a B S/ B 50 lim itin g ar ea rea rea ga ga itin lim Tc=25°C S/ itin lim Pc Collector Current Ic (A) ga Collector Current Derating coefficient DF (%) itin 0 0 50 Collector-Emitter Voltage VCE (V) 100 150 200 250 300 Case Temp Tc (°C) Fig.1 Safe Operating Area Fig.2 Derating Curve of Safe Operating Area Derating coefficient is obtained from temperature in Fig.2 and it must be applied to the current value of the safe operating area in order to obtain the derated current. s Accessories 6 Sanken Transistors do not include accessories. Accessories may be attached at a cost if requested. 6 Sanken transistor case is a standard size, and can be used with any generally sold accessories. • Insulater: Mica, with a thickness of 0.06mm, +0.045 –0.005 allowance Type Name:Mold(14)Mica Type Name:Mold(9)Mica 3.1 20.0 ±0.1 12.0±0.1 ±0.1 10.0 +0.2 –0 7.0 14.0±0.1 2.5±0.2 5.0±0.1 19.4±0.1 6.0±0.2 3.7±0.1 2–ø3.2 +0.1 –0 ø3.2 +0.1 –0 ø3.75 +0.1 –0 24.0±0.1 Type Name:Mold(10)Mica • Insulation Bush for MT-25 (TO220) R0.5 7.0 ±0.1 24.0 1.5±0.2 24.38±0.1 +0.2 –0 R0.5 39.0±0.1 R0.5 9
  12. 12. Switching Characteristics s Typical Switching Characteristics (Common Emitter) VCC RL IC VB2 VBB1 (V) (Ω) (A) (V) VBB2 (V) IB1 (V) (A) tr (µs) IB2 (A) tstg (µs) tf (µs) sSwitching Characteristics Test Circuit/Measurement Wave Forms 20µs IC –VCC R2 Base Current 0 0 IB1 0 IB2 +VBB2 PNP IB2 IB1 0 IC 0 Collector Current 0.1IC D.U.T 50µs 0.9IC R1 ton –VBB1 tstg tf RL 0 GND 50µs Base Current 0 VCC R1 0 IB1 IC 0 IB2 +VBB1 NPN IB1 Collector 0.9IC Current 0.1IC 0 IC D.U.T IB2 R2 0 20µs –VBB2 GND ton tstg tf RL 0 Symbols Symbol Item Definition VCBO Collector-Base Voltage DC Voltage between Collector and Base when Emitter is open VCEO Collector-Emitter Voltage Voltage between Collector and Emitter when Base is open and voltage is reversely applied to Collector junction VEBO Emitter-Base Voltage DC voltage between Emitter and Base when Collector is open IC Collector Current DC current passing through Collector electrode IB Base Current DC current passing through Base electrode PC Collector Power Dissipation Power consumed at Collector junction Tj Operating Junction Temperature Maximum allowable temperature value at absolute maximum ratings Tstg Storage Temperature Maximum allowable range of ambient temperature at non-operation ICBO Collector Cutoff Current Collector current when Emitter is open and a specified reverse voltage is applied between Collector and Base IEBO Emitter Cutoff Current Emitter current when Collector is open and a specified reverse voltage is applied between Emitter and Base V(BR)CEO Collector-Emitter Saturation Voltage Breakdown voltage between Collector and Emitter when Base is open hFE DC Current Gain Ratio of DC output current and DC input current at a specified voltage and current (Emitter common) VCE(sat) Collector-Emitter Saturation Voltage DC voltage between Collector and Emitter under specified saturation conditions VBE(sat) Base-Emitter Saturation Voltage DC voltage between Base and Emitter under specified saturation conditions VFEC Emitter-Collector Diode Forward Voltage Diode forward voltage between Emitter and Collector when Base is open fT Cut-off Frequency Frequency at the specified voltage and current where hFE is 1 (0dB) Cob Collector Junction capacitance Junction capacitance between collector and Base at a specified voltage and frequency • Ta=25°C unless otherwise specified. 10
  13. 13. 2SA1186 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit V ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VCBO –150 VCEO –150 –5 V V(BR)CEO IC –10 A hFE VCE=–4V, IC=–3A IB –2 A VCE(sat) IC=–5A, IB=–0.5A PC 100(Ta=25°C) W fT Tj 150 °C COB –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 50min∗ ø3.2±0.1 MHz pF 2 4.0max 60typ 110typ 20.0min VCE=–12V, IE=1A VCB=–80V, f=1MHz 3 1.05 +0.2 -0.1 5.45±0.1 IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 5 –500 500 0.25typ 0.8typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.2typ V CE ( sat ) – I B Characteristics (Typical) 0 –1 0 –2 –3 0 –4 0 –0.5 –1.0 –1.5 (V C E =–4V) 200 Transient Thermal Resistance DC C urrent G ain h FE 125˚C 25˚C 100 Typ 50 –5 –1 –10 –30˚C 50 30 –0.02 –0.1 –0.5 f T – I E Characteristics (Typical) p) ) emp eT Cas ˚C ( –2 –1 –5 –10 3 1 0.5 0.2 1 10 Collector Current I C (A) Collector Current I C (A) p) –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.02 Tem –2 –5A Collector-Emitter Voltage V C E (V) 100 –4 Tem –1 –30 I B =–20m A –2 I C =–10A se –40mA se –4 –6 C( –60mA –2 25˚ –8 0m A –6 –8 (Ca mA –120 100mA – ˚C –1 125 A Collector Current I C (A) m (V C E =–4V) –10 θ j - a ( ˚ C/W) –8 00 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 00 –4 –2 A 60m I C – V BE Temperature Characteristics (Typical) –3 Ca I C – V CE Characteristics (Typical) 1.4 E tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) –10 2.0±0.1 V VCC (V) Collector Current I C (A) a 4.8±0.2 b –2.0max sTypical Switching Characteristics (Common Emitter) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) si nk M aximum Power Dissip ation P C (W) 50 at Collector-Emitter Voltage V C E (V) –200 he –100 ite –10 fin –0.2 –2 In Emitter Current I E (A) 10 Without Heatsink Natural Cooling ith –0.5 1 C –1 20 0.1 D W 40 –5 ms T yp 10 Cu t-of f Fr eque ncy f T ( MH Z ) –10 60 0 0.02 100 –30 80 Collecto r Cur rent I C (A) DC Curr ent Gain h FE 4.0 VEBO 15.6±0.4 9.6 1.8 Ratings 5.0±0.2 Conditions Unit 2.0 Symbol Ratings 19.9±0.3 Symbol Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 11
  14. 14. 2SA1215 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit –160 V VCBO Application : Audio and General Purpose External Dimensions MT-200 (Ta=25°C) Conditions ICBO Ratings Unit VCB=–160V Symbol –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–25mA –160min V VCEO –160 V IEBO VEBO –5 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 150(Tc=25°C) W fT VCE=–12V, IE=2A 50typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2-ø3.2±0.1 7 21.4±0.3 a b 2 3 5.45±0.1 VCC (V) RL (Ω) IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) –60 12 –5 5 –500 500 0.25typ 0.85typ B C E Weight : Approx 18.4g a. Part No. b. Lot No. 0.2typ V CE ( sat ) – I B Characteristics (Typical) –1 0 –2 –3 0 –4 0 Collector-Emitter Voltage V C E (V) –0.2 –0.4 –0.6 –0.8 (V C E =–4V) 200 Typ 50 25˚C 100 –30˚C 50 30 –0.02 –5 –10 –15 –1 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C –0.5 Collector Current I C (A) –0.1 –0.5 ) p) mp) e Te Cas ˚C ( –2 –1 –5 –10 –15 em 2 1 0.5 0.1 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) emp eT se T Cas –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 10 –0.02 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 –5 –5A θ j- a ( ˚C/W) 0 I C =–10A –30 I B =–20mA –1 (Ca –50mA –4 –10 ˚C ( –10 0mA –8 –2 25˚C mA –1 50 m A 125 –200 –12 (V C E =–4V) –15 Collector Current I C (A) A A A m A 0m 0m 0m 0m 50 –60 –50 –40 –30 –7 A I C – V BE Temperature Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) –16 3.0 +0.3 -0.1 5.45±0.1 tf (µs) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Collector Current I C (A) 9 4.0max 20.0min Tstg 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 160 10 m C –5 si nk Without Heatsink Natural Cooling at –0.5 80 he –1 120 ite 20 D fin 40 –10 In Collector Curr ent I C (A) p ith Ty s 60 W Ma xim um Powe r Dissipat io n P C (W) –40 80 Cut- off F req uency f T ( MH Z ) DC Curr ent Gain h FE 6.0±0.2 2.1 40 Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 12 10 –0.2 –2 –10 –100 Collector-Emitter Voltage V C E (V) –200 5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
  15. 15. 2SA1216 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Unit –180 V External Dimensions MT-200 (Ta=25°C) SymboI Conditions Ratings Unit VCBO Ratings VCBO Application : Audio and General Purpose VCB=–180V –100max µA VEB=–5V –100max –180min 24.4±0.2 µA IC=–25mA 2.1 V VCEO –180 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 30min∗ IB –5 A VCE(sat) IC=–8A, IB=–0.8A –2.0max V PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 40typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 21.4±0.3 a b 2 3 5.45±0.1 RL (Ω) IC (A) VB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 –10 5 –1 1 0.3typ 0.7typ C E Weight : Approx 18.4g a. Part No. b. Lot No. tf (µs) –40 0.2typ I C – V CE Characteristics (Typical) I B =–20mA 0 0 –1 –2 –3 –4 0 –0.8 0 –1.0 0 50 –5 125˚C 100 25˚C –30˚C 50 10 –0.02 –10 –17 –0.1 f T – I E Characteristics (Typical) ) –2 –2.4 θ j-a – t Characteristics –0.5 –1 –5 –10 –17 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) e T emp –1 Base-Emittor Voltage V B E (V) 200 DC Cur rent Gain h F E Typ –1 –0.6 (V C E =–4V) 300 –0.5 –0.4 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.1 –0.2 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 e T em p) Tem p) –5A 0 Collector-Emitter Voltage V C E (V) 100 –5 I C =–10A Cas –1 ˚C( –50mA –30 –5 –10 Cas –100mA –2 ase –150mA ˚C( –2 00 mA –10 –15 C(C A (V C E =–4V) –17 25˚ –3 00 m –3 125 mA Collector Current I C (A) 0 –40 θ j - a (˚ C/W) A I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance –7 m 00 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –15 –5 –1. 5A –1 A 00 m A –17 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Collector Current I C (A) 9 4.0max 20.0min Tstg 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 200 10 m Emitter Current I E (A) 10 –0.2 –2 –10 –100 Collector-Emitter Voltage V C E (V) –300 nk 1 si 0.1 at 0 0.02 Without Heatsink Natural Cooling he –0.5 120 ite –1 fin –5 160 In 20 DC –10 ith Collect or Cur ren t I C (A) s T 40 yp W M aximum Power Dissipa ti on P C (W) –50 60 Cu t-off Fre quen cy f T (MH Z ) DC Curr ent Gain h F E 6.0±0.2 36.4±0.3 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 13
  16. 16. 2SA1262 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose sElectrical Characteristics External Dimensions MT-25(TO220) (Ta=25°C) Symbol Conditions Ratings Unit V ICBO VCB=–60V –100max µA V IEBO VEB=–6V –100max µA –6 V V(BR)CEO IC=–25mA –60min V –4 A hFE VCE=–4V, IC=–1A 40min –60 VCEO –60 VEBO IC 10.2±0.2 A VCE(sat) IC=–2A, IB=–0.2A –0.6max V 30(Tc=25°C) W fT VCE=–12V, IE=0.2A 15typ 150 °C COB VCB=–10V, f=1MHz 90typ pF –55 to +150 °C Tstg 2.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 1.4 10 –2 –10 5 –200 200 0.25typ 0.75typ Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) –20 0.25typ I B =–5mA 0 0 –1 –2 –3 –4 –5 –6 –0.5 –0.1 –0.5 0 –1 (V C E =–4V) 200 Typ 100 50 –1 25˚C 100 –30˚C 50 20 –0.02 –4 Transient Thermal Resistance D C Cur r ent Gai n h F E 125˚C –0.1 f T – I E Characteristics (Typical) –1 –4 1 1 10 30 he at si nk 10 ite Without Heatsink Natural Cooling fin –0.5 20 In –1 ith s C W s 0m Collector Cur rent I C (A) s m 10 D M aximum Po wer Dissipat io n P C (W) 1m 10 –5 20 1000 P c – T a Derating –10 30 100 Time t(ms) Safe Operating Area (Single Pulse) Typ –1.5 5 0.7 (V C E =–12V) 50 –1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 40 –0.5 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 60 0 Base Current I B (A) (V C E =–4V) –0.5 ) –1A 0 –0.1 h FE – I C Characteristics (Typical) –0.1 emp –2A Collector-Emitter Voltage V C E (V) 20 –0.01 eT –1 I C =–3A mp) (Cas e Tem p) –0.5 –2 –30˚C –10mA –1 –3 e Te –20mA –2 –1.0 Cas –30mA (Cas –40m A –3 ˚C ( –50m A (V C E =–4V) –4 25˚C A 125 –60m θ j- a ( ˚ C/W) A –1.5 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) –8 0m I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –4 Collector Current I C (A) 2.5 B C E VCC (V) Cut- off F req uency f T (M H Z ) 1.35 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) DC Curr ent Gain h F E b MHz Tj 2.0±0.1 ø3.75±0.2 a 4.0max –1 PC 12.0min IB 4.8±0.2 3.0±0.2 VCBO 16.0±0.7 Unit 8.8±0.2 Ratings Symbol 10 Without Heatsink 0 0.005 0.01 0.05 0.1 0.5 Emitter C urrent I E (A) 14 1 3 –0.1 –2 2 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
  17. 17. 2SA1294 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) sAbsolute maximum ratings (Ta=25°C) Ratings VCBO –230 VCEO –230 sElectrical Characteristics Unit External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit V ICBO VCB=–230V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –230min V V V(BR)CEO –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max PC 130(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 4.8±0.2 2.0±0.1 V Tstg a ø3.2±0.1 2 4.0max 20.0min b 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.35typ 1.50typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.30typ I B =–20mA 0 0 –1 –2 –3 –1 –5A 0 –4 0 Collector-Emitter Voltage V C E (V) –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 Typ 50 –0.5 –1 25˚C 100 –30˚C 50 10 –0.02 –5 –10 –15 Transient Thermal Resistance DC C urrent G ain h FE 125˚C –0.1 Collector Current I C (A) –0.1 –0.5 –1 –5 –10 –15 0.5 0.1 10 s he at si nk Without Heatsink Natural Cooling ite –0.5 fin –1 100 In Collector Curr ent I C (A) DC ith Ma ximum Po we r Dissipa ti on P C (W) m –5 50 –0.1 0.1 1 Emitter Current I E (A) 10 –0.05 –3 1000 2000 P c – T a Derating –10 0 0.02 100 Time t(ms) W Cut-o ff F requ ency f T (MH Z ) 1 130 10 20 mp) 1 –40 p –2.5 3 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) Ty –1 Collector Current I C (A) f T – I E Characteristics (Typical) 40 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 10 –0.02 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 –5 I C =–10A eTe –50mA Cas –5 –10 mp ) emp ) –1 00 mA –2 seT A mA 200 (Ca – 0m ˚C ( –30 –10 –30 mA (V C E =–4V) eTe 00 –15 Cas –5 – 3 ˚C ( A 25˚C .0 –1 125 5A Collector Current I C (A) . –1 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) –3 .0A –2 .0 A –15 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collector Current I C (A) 4.0 –5 IC 19.9±0.3 VEBO DC C urrent G ain h FE 15.6±0.4 9.6 1.8 Conditions 5.0±0.2 Symbol 2.0 Symbol Application : Audio and General Purpose Without Heatsink –10 –100 Collector-Emitter Voltage V C E (V) –300 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 15
  18. 18. 2SA1295 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) sAbsolute maximum ratings Symbol sElectrical Characteristics (Ta=25°C) External Dimensions MT-200 (Ta=25°C) Unit –230 Symbol V Conditions Ratings Unit ICBO Ratings VCBO Application : Audio and General VCB=–230V –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–25mA –230min V VCEO –230 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–5A 50min∗ IB –5 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 200(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 2-ø3.2±0.1 21.4±0.3 7 9 a b 2 4.0max 20.0min Tstg 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.35typ 1.50typ E Weight : Approx 18.4g a. Part No. b. Lot No. 0.30typ –5 –50mA I B =–20mA 0 0 –1 –2 –3 –1 I C =–10A –5 –5A 0 –4 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 Typ 50 –0.5 –1 –5 25˚C 100 50 –30˚C 10 –0.02 –10 –17 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C –0.1 0 –0.8 –0.1 –0.5 –1 –1.6 f T – I E Characteristics (Typical) –3.2 –5 –10 –17 θ j-a – t Characteristics 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) –2.4 Base-Emittor Voltage V B E (V) (V C E =–4V) 10 –0.02 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 –10 mp) –1 00 mA –2 p) mA e Te –200 em 0mA –15 Cas –30 –10 mA –17 ˚C ( 0 –50 (V C E =–4V) – 3 –30 – A 1.0 eT A 125 ˚C ( Cas 25˚C .5 –1 Collector Current I C (A) –15 0A I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) –3 .0 . –2 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A –17 Collector Current I C (A) C tf (µs) –60 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 200 –40 D 1 Emitter Current I E (A) 16 10 –0.05 –3 –10 –100 Collector-Emitter Voltage V C E (V) –300 nk 0.1 si 0 0.02 at Without Heatsink Natural Cooling –0.1 he –0.5 120 ite 20 –1 fin p 160 In Ty –5 ith 40 s C W Collect or Cur ren t I C (A) –10 m M aximum Power Dissipa ti on P C (W) 10 Cu t-of f Fr eque ncy f T ( MH Z ) DC Cur rent Gain h F E 6.0±0.2 2.1 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
  19. 19. 2SA1303 LAPT Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) sElectrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit V ICBO VCB=–150V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VCBO –150 VCEO –150 –5 V V(BR)CEO IC –14 A hFE VCE=–4V, IC=–5A 50min IB –3 A VCE(sat) IC=–5A, IB=–0.5A –2.0max 50typ MHz VCB=–10V, f=1MHz 400typ pF 4.8±0.2 2.0±0.1 V VCE=–12V, IE=2A W Tj 150 °C COB –55 to +150 °C ø3.2±0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.25typ 0.85typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.2typ 0 –1 0 –2 –3 0 –4 0 –0.2 –0.4 –0.6 –0.8 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 Typ 50 –1 25˚C 100 –30˚C 50 30 –0.02 –5 –10 –14 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C –0.5 f T – I E Characteristics (Typical) –0.1 –0.5 emp ) p) Tem p) se eT Cas ˚C ( –1 –2 –1 –5 θ j-a – t Characteristics –10 –14 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) Tem 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.02 (Ca –5A Collector-Emitter Voltage V C E (V) 100 –5 I C =–10A –30 I B =–20mA –1 ˚C –50mA –4 –10 ase –10 0mA –8 –2 C (C –1 50 m A 25˚ mA 125 –200 –14 Collector Current I C (A) –12 (V C E =–4V) –3 θ j- a ( ˚C/W) –7 00 –6 mA 00 m A A A m m mA 00 00 00 –3 –5 –4 I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Collector Current I C (A) 2 4.0max 125(Tc=25°C) fT a b 20.0min PC 4.0 VEBO 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) –40 –10 nk Maxim um Power Dissip ation P C (W) si Co lle ctor Cu rr ent I C (A) at Collector-Emitter Voltage V C E (V) –200 he –100 ite –10 fin –0.2 –3 In Emitter Current I E (A) 10 Without Heatsink Natural Cooling ith –1 100 W 1 s 0.1 C –5 –0.5 0 0.02 1m 20 s 40 s p 0m Ty D m 10 60 130 10 80 Cut- off F req uency f T (MH Z ) DC Cur rent Gain h FE 15.6±0.4 9.6 1.8 Conditions Unit 2.0 Symbol Ratings 19.9±0.3 Symbol 5.0±0.2 sAbsolute maximum ratings Application : Audio and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 17
  20. 20. 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) VCBO –180 –160 Conditions Symbol V –180 –160 VCEO Unit V –100max –160 ICBO –180 VCB= VEBO –5 V IEBO IC –15 A V(BR)CEO V µA –100max VEB=–5V –180min –160min IC=–25mA A hFE VCE=–4V, IC=–5A W VCE(sat) IC=–5A, IB=–0.5A –2.0max 2.0±0.1 ø3.2±0.1 50min∗ 130(Tc=25°C) 4.8±0.2 b V 150 Tstg °C fT VCE=–12V, IE=2A 40typ MHz –55 to +150 Tj °C COB VCB=–10V, f=1MHz 500typ 3 pF 1.05 +0.2 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 –10 –10 5 –1 1 0.3typ 0.7typ 5.45±0.1 C Weight : Approx 6.0g a. Part No. b. Lot No. I B =–20mA –1 –2 –3 0 –4 0 –0.2 –0.4 –0.6 –0.8 h FE – I C Characteristics (Typical) (V C E =–4V) –5 –10 –15 Transient Thermal Resistance DC Curr ent Gain h FE Typ –1 p) 125˚C 100 25˚C –30˚C 50 20 –0.02 –0.1 –0.5 f T – I E Characteristics (Typical) –2 –1 –5 –10 –15 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) mp) mp) –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1.0 Base Current I B (A) 300 10 –0.02 em I C =–10A –5A Collector-Emitter Voltage V C E (V) 100 –5 e Te –1 (Cas –50mA –30˚C –5 –10 eT –100mA –2 (V C E =–4V) e Te –150mA 0 –15 Cas –200mA –10 0 –3 (Cas –3 00 m A 25˚C A ˚C ( m 125 – 0 40 Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W ) Collector Current I C (A) –7 00 –5 m 00 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) m A –15 1.4 E 0.2typ I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 B tf (µs) –40 DC Curr ent Gain h FE 2 4.0max –4 PC a V 20.0min IB 15.6±0.4 9.6 µA –100max 1.8 2SA1386 2SA1386A 5.0±0.2 Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 2SA1386A 2SA1386 2.0 Ratings 4.0 sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Application : Audio and General Purpose 19.9±0.3 LAPT 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 130 –40 10 DC 0.1 1 Emitter Current I E (A) 18 10 –0.05 –3 –10 –50 –100 Collector-Emitter Voltage V C E (V) 2 –200 nk 1 0 0.02 si –0.1 at 1.2SA1386 2.2SA1386A he Without Heatsink Natural Cooling ite –1 –0.5 100 fin 20 –5 In Collecto r Cur ren t I C ( A) p ith Ty W Cut-o ff Fr eque ncy f T (MH Z ) –10 40 ms Ma xim um Powe r Dissipation P C ( W) 60 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
  21. 21. 2SA1488/1488A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) V ICBO VCB= –60 VEBO –6 V IEBO IC –4 A V(BR)CEO IB –1 A hFE PC 25(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB µA V –80 VCB=–10V, f=1MHz Tstg VEB=–6V µA –100max IC=–25mA –60min –80min VCE=–4V, IC=–1A 40min IC=–2A, IB=–0.2A –0.5max V VCE=–12V, IE=0.2A 15typ MHz 90typ ø3.3±0.2 a b V pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –12 6 –2 –10 5 –200 200 0.25typ 0.75typ I B =–5mA 0 0 –1 –2 –3 –4 –5 –0.5 –1 I C =–3A –2A –1A 0 –0.1 –6 –0.5 Collector-Emitter Voltage V C E (V) –0.1 –0.5 0 –1 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 500 Typ 100 50 –1 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C –0.5 25˚C 100 –30˚C 50 20 –0.02 –4 –0.1 f T – I E Characteristics (Typical) –1 –4 1 1 10 30 100ms Collect or Cur ren t I C (A) 50 10 1m 10 m s M aximu m Power Dissi pation P C (W) –5 20 1000 P c – T a Derating –10 30 100 Time t(ms) Safe Operating Area (Single Pulse) Typ –1.5 5 0.7 (V C E =–12V) 40 –1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) 60 –0.5 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 –0.01 –2 eT emp ) e Te mp) (Cas e Tem p) –10mA –1 –3 –30˚C –20mA –2 –1.0 Cas –30mA (Cas –40m A –3 ˚C ( –50m A (V C E =–4V) –4 –1.5 125 A 25˚C –60m θ j - a (˚ C/W) A I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) –8 0m B C E V CE ( sat ) – I B Characteristics (Typical) –4 DC C urrent G ain h FE Weight : Approx 2.0g a. Part No. b. Lot No. 0.25typ I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) Cu t-off Fre quen cy f T ( MH Z ) 4.0±0.2 V –80 4.2±0.2 2.8 c0.5 0.8±0.2 –80 –60 10.1±0.2 ±0.2 –60 VCEO Unit 3.9 VCBO Conditions Symbol Unit External Dimensions FM20 (TO220F) (Ta=25°C) Ratings 2SA1488 2SA1488A –100max –100max 8.4±0.2 sElectrical Characteristics 16.9±0.3 Ratings Symbol 2SA1488 2SA1488A 13.0min sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose s DC –1 –0.5 Without Heatsink Natural Cooling –0.1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 0.005 0.01 –0.05 0.05 0.1 0.5 Emitter Current I E (A) 1 3 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 19
  22. 22. 2SA1492 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) sElectrical Characteristics (Ta=25°C) Ratings Unit VCBO –180 VCEO –180 External Dimensions MT-100(TO3P) (Ta=25°C) Unit V ICBO VCB=–180V –100max µA V IEBO VEB=–6V –100max µA IC=–50mA –180min V VEBO –6 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–3A 50min∗ 2.0±0.1 ø3.2±0.1 VCE(sat) IC=–5A, IB=–0.5A –2.0max V W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 4 –10 –10 5 –1 1 0.6typ 0.9typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.2typ V CE ( sat ) – I B Characteristics (Typical) I B =–20mA 0 0 –1 –2 –3 I C =–10A –5A 0 –4 0 Collector-Emitter Voltage V C E (V) –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 Typ 100 50 25˚C 100 –30˚C 50 20 –0.02 –5 –10 –15 –0.1 –0.5 f T – I E Characteristics (Typical) –1 3m 10 P c – T a Derating 0m s s s C nk Collector-Emitter Voltage V C E (V) –200 si –100 at –10 he Without Heatsink Natural Cooling 100 ite Collector Cur rent I C (A) m –1 –0.1 –3 1000 2000 fin 10 D –5 –0.5 100 Time t(ms) In 10 Temp) 10 ith 20 20 1 W –10 Typ Emitter Current I E (A) 0.1 130 10 1 –10 –15 0.5 –40 30 0.1 –5 1 Safe Operating Area (Single Pulse) (V C E =–12V) –2 3 Collector Current I C (A) Collector Current I C (A) 0 0.02 –1 θ j-a – t Characteristics M aximum Power Dissipa ti on P C ( W) –1 125˚C Transient Thermal Resistance DC Curr ent Gain h FE 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 –5 (Case –1 –30˚C –50mA –5 –10 mp) Temp ) –0 .1 A –2 (Case A 25˚C – 0 .2 –10 e Te 4A Cas –0. (V C E =–4V) –15 – 3 ˚C ( 6A θ j - a (˚C/W) –1 A –0. 125 –15 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) 1.4 E tf (µs) –40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) Cut- off F re quen cy f T (MH Z ) 2 4.0max A 130(Tc=25°C) 20.0min –4 PC Collector Current I C (A) a 4.8±0.2 b IB DC Curr ent Gain h FE 15.6±0.4 9.6 1.8 Ratings 5.0±0.2 Conditions 2.0 Symbol 19.9±0.3 Symbol 4.0 sAbsolute maximum ratings Application : Audio and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
  23. 23. 2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) sAbsolute maximum ratings (Ta=25°C) Symbol Ratings –200 sElectrical Characteristics Unit VCBO Application : Audio and General Purpose External Dimensions MT-200 (Ta=25°C) Symbol Conditions Ratings Unit V ICBO VCB=–200V –100max µA VEB=–6V –100max µA IC=–50mA –200min V V IEBO –6 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –5 A VCE(sat) IC=–10A, IB=–1A – 3.0max V VCE=–12V, IE=0.5A 20typ MHz VCB=–10V, f=1MHz 400typ pF 2.1 W Tj 150 °C COB –55 to +150 °C 9 a b ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 2 4.0max 150(Tc=25°C) fT 20.0min PC 2-ø3.2±0.1 7 –200 VEBO 24.4±0.2 21.4±0.3 VCEO 6.0±0.2 36.4±0.3 3 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.3typ 0.9typ E Weight : Approx 18.4g a. Part No. b. Lot No. 0.2typ 0 0 –1 –2 –3 –10A –5A 0 –4 0 Collector-Emi tter Voltage V C E (V) 200 DC C urrent G ain h FE Typ 100 50 –1 –30˚C 50 20 –0.02 –5 –10 –15 –0.1 –0.5 –5 –10 –15 0.1 1 10 m C s 10 0m s 10ms s 2000 si nk –300 80 at –100 he –10 Collector-Emitter Voltage V C E (V) ite Without Heatsink Natural Cooling fin –1 120 In –5 –2 1000 P c – T a Derating –0.1 10 100 Time t(ms) ith Co lle ctor Cu rr ent I C ( A) D –10 –0.5 emp) 0.5 W 10 (CaseT 1 160 3m Typ Cut- off F re quen cy f T ( MH Z ) –1 2 –50 20 20 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) 30 1 –1 Collector Current I C (A) (V C E =–12V) Emitter Current I E (A) 0 Base-Emittor Voltage V B E (V) 25˚C 100 f T – I E Characteristics (Typical) 0.1 0 –4 125˚C Collector Current I C (A) 0 0.02 –3 (V C E =–4V) 300 –0.5 –2 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.1 –1 Base Current I B (A) h FE – I C Characteristics (Typical) 10 –0.02 –5 I C =–15A –30˚C –1 eTe mp) Temp ) I B =–5 0m A –5 –10 Cas –1 00 mA –2 (Case A ˚C ( –200m –10 (V C E =–4V) 125 mA θ j- a (˚C /W ) –400 –15 25˚C mA Transient Thermal Resistance – 0 60 Maximu m Power Dissip ation P C (W) A Collector-Emitter Saturation Voltage V C E (s at) (V ) 5A –1. Collector Current I C (A) –1 I C – V BE Temperature Characteristics (Typical) –3 Collector Current I C (A) V CE ( sa t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) DC C urrent G ain h FE C tf (µs) –60 3.0 +0.3 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) –15 0.65 +0.2 -0.1 1.05 +0.2 -0.1 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 21
  24. 24. 2SA1494 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Symbol Ratings –200 V External Dimensions MT-200 (Ta=25°C) Conditions ICBO Ratings Unit VCB=–200V Symbol Unit VCBO Application : Audio and General Purpose –100max µA 36.4±0.3 24.4±0.2 VEB=–6V –100max µA IC=–50mA –200min V VCEO –200 V IEBO VEBO –6 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 50min∗ IB –5 A VCE(sat) IC=–10A, IB=–1A –2.5max V PC 200(Tc=25°C) W fT VCE=–12V, IE=1A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 21.4±0.3 a b 2 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ C E Weight : Approx 18.4g a. Part No. b. Lot No. 0.2typ I B =–20mA 0 0 –1 –2 –3 –4 –10A 0 0 –1 –2 (V C E =–4V) 200 Typ 100 50 –5 25˚C 100 –30˚C 50 20 –0.02 –10 –17 –0.1 –0.5 f T – I E Characteristics (Typical) –10 –17 3m s 10ms Collector-Emitter Voltage V C E (V) –300 ) nk –100 si –10 at –2 he Without Heatsink Natural Cooling 120 ite –1 fin –5 160 In Collector Curr ent I C (A) C ith D –0.1 10 1000 W –10 –0.5 100 s Ma xim um Powe r Dissipat io n P C (W) m s 10 Emitter Current I E (A) 10 P c – T a Derating 0m 20 1 1 Time t(ms) 10 Typ 0.1 0.1 200 20 Cut- off Fr equ ency f T (MH Z ) –5 0.5 –50 30 22 –1 1 Safe Operating Area (Single Pulse) (V C E =–12V) –2 2 Collector Current I C (A) Collector Current I C (A) 0 0.02 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C –1 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –3 Base Current I B (A) h FE – I C Characteristics (Typical) Temp –5A Collector-Emitter Voltage V C E (V) 10 –0.02 –5 I C =–15A (Case –1 –30˚C –50mA –5 –10 e Te mp) Temp ) –1 00 m A –2 (Cas A (Case –200m –10 –15 125˚C 0mA 25˚C –40 Collector Current I C (A) 0 θ j - a (˚C /W) A .5 –60 mA (V C E =–4V) –17 –3 –1A –1 –15 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –17 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) Collector Current I C (A) 9 4.0max 20.0min Tstg DC Curr ent Gain h FE 6.0±0.2 2.1 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000
  25. 25. 2SA1567 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) hFE V VCE=–1V, IC=–6A 50min IC=–6A, IB=–0.3A –0.35max V A VCE(sat) 35(Tc=25°C) W fT VCE=–12V, IE=0.5A 40typ MHz 150 °C COB VCB=–10V, f=1MHz 330typ pF –55 to +150 °C Tstg 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) 5 0 –5mA 0 –1 –2 –3 –4 –5 –0.5 0 –6 –10 –2 –100 –1000 (V C E =–1V) 500 125˚C D C Cur r ent Gai n h F E Typ 100 50 25˚C –30˚C 100 50 30 –0.02 –10 –0.1 f T – I E Characteristics (Typical) –1 –10 0.3 1 10 0m s 1000 s ite he 150x150x2 at si nk –0.1 fin Without Heatsink Natural Cooling 20 In –0.5 ith –1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 W Collector Cur rent I C (A) s m DC –5 –0.05 –3 100 P c – T a Derating 10 10 Typ 12 –1.2 Time t(ms) Maximu m Power Dissi pation P C (W) 1m 20 –1.0 35 –10 30 –0.8 0.5 –30 40 –0.6 1 Safe Operating Area (Single Pulse) 50 Cut- off Fr equ ency f T (M H Z ) –0.4 4 (V C E =–12V) Emitter Current I E (A) –0.2 Collector Current I C (A) Collector Current I C (A) 1 0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 500 0 0.05 0.1 p) 0 –3000 Base-Emittor Voltage V B E (V) (V C E =–1V) –1 –4 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.1 –6 –2 Collector-Emitter Voltage V C E (V) 30 –0.02 –8 Tem 12A –10mA –2 –9A –20mA –6A –4 –1.0 –3A –40mA –10 –1A –6 (V C E =–1V) –12 –1.5 I C= – –60mA I C – V BE Temperature Characteristics (Typical) se –2 –10 0m A –8 0.2typ ˚C A I B= –10 Collector Current I C (A) 0m Collector-Emitter Saturation Voltage V C E (s a t) (V ) mA 00 –15 0.4typ V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –12 0.4typ 120 –120 Weight : Approx 2.0g a. Part No. b. Lot No. B C E (Ca –10 tf (µs) 125 –6 4 tstg (µs) Collector Current I C (A) –24 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) VBB1 (V) θ j- a (˚ C/W) IC (A) RL (Ω) 2.4±0.2 2.2±0.2 Transient Thermal Resistance VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 25˚C Tj 3.9 –3 PC 13.0min IB DC Curr ent Gain h F E ø3.3±0.2 a b mp) A e Te –12 µA –50min (Cas IC –100max 4.0±0.2 V(BR)CEO 0.8±0.2 IEBO V 4.2±0.2 2.8 c0.5 mp) V –6 10.1±0.2 –30˚C –50 VEBO µA e Te VCEO Symbol –100max IC=–25mA ICBO (Cas V Conditions VEB=–6V –50 Unit VCB=–50V Unit VCBO Symbol External Dimensions FM20 (TO220F) (Ta=25°C) Ratings ±0.2 sElectrical Characteristics Ratings 8.4±0.2 sAbsolute maximum ratings (Ta=25°C) Application : DC Motor Driver, Chopper Regulator and General Purpose 16.9±0.3 LOW VCE (sat) 100x100x2 10 50x50x2 Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 23
  26. 26. 2SA1568 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065) IEBO V V(BR)CEO IC A IB –3 mA V hFE VCE=–1V, IC=–6A 50min A VCE(sat) IC=–6A, IB=–0.3A –0.35max IECO=–10A –2.5max V V 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=–12V, IE=0.5A 40typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 330typ pF 13.0min 1.35±0.15 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) 5 –1 –2 –3 –4 –5 0 –7 –10 –6 –100 Collector-Emitter Voltage V C E (V) –1000 (V C E =–1V) 300 125˚C D C Cur r ent Gai n h F E 100 25˚C –30˚C 100 10 10 2 –0.02 –10 –0.1 Collector Current I C (A) –1 –10 p) Tem 0.3 1 10 1000 s ite he 150x150x2 at si nk Without Heatsink Natural Cooling 20 fin –0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 In Maximu m Power Dissi pation P C (W) 0m –1 –0.05 –3 100 ith 24 0.5 W Collector Cur rent I C (A) DC s –5 s –0.1 10 –1.2 P c – T a Derating m 20 –1.0 Time t(ms) 10 10 Typ 30 –0.8 35 1m 40 –0.6 1 Safe Operating Area (Single Pulse) –10 Emitter Current I E (A) –0.4 4 –30 1 –0.2 θ j-a – t Characteristics (V C E =–12V) 50 0 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off Fr equ ency f T (M H Z ) DC Curr ent Gain h F E Typ 0 0.05 0.1 0 –3000 h FE – I C Temperature Characteristics (Typical) 300 –1 –4 Base-Emittor Voltage V B E (V) (V C E =–1V) –0.1 –6 Base Current I B (mA) h FE – I C Characteristics (Typical) 2 –0.02 –8 –2 Transient Thermal Resistance Collector Current I C (A) I B= 0 A 0 –0.5 –9A –10mA –2 –3 A –20mA –1.0 –1A –4 –10 –6A –40mA (V C E =–1V) –12 –1.4 –12 –60mA I C – V BE Temperature Characteristics (Typical) I C= –8 –6 0.2typ ˚C –1 00 mA –2 –10 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 0mA 00 mA –15 0.4typ V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –12 0.4typ 120 –120 se –10 B C E (Ca –6 4 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) 125 –24 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) RL (Ω) 2.4±0.2 2.2±0.2 θ j - a (˚C /W) VCC (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 25˚C Tstg 3.9 PC ø3.3±0.2 a b 0.8±0.2 –60min 8.4±0.2 –60max 16.9±0.3 VEB=–6V IC=–25mA 4.2±0.2 2.8 c0.5 mp) V –6 – +12 10.1±0.2 e Te –60 VEBO µA (Cas VCEO –100max 4.0±0.2 ICBO mp) V Unit –30˚C –60 Ratings VCB=–60V VCBO External Dimensions FM20 (TO220F) (Ta=25°C) Conditions ±0.2 Symbol Unit C Application : DC Motor Driver, Chopper Regulator and General Purpose sElectrical Characteristics Ratings Symbol Equivalent curcuit e Te sAbsolute maximum ratings (Ta=25°C) B (Cas Built-in Diode at C–E Low VCE (sat) E ( 250 Ω ) 100x100x2 10 50x50x2 Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
  27. 27. 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) –200 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO µA –150 ICBO V –10max –200 10.1±0.2 V µA –10max VEB=–6V –150min IC=–25mA –200min hFE VCE=–10V, IC=–0.7A 60min W VCE(sat) IC=–0.7A, IB=–0.07A –1.0max V Tj 150 °C fT VCE=–12V, IE=0.2A 20typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 60typ pF Tstg 3.9 A 25(Tc=25°C) 13.0min –1 PC ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 V Unit –10max Conditions Symbol External Dimensions FM20 (TO220F) 0.8±0.2 –150 Unit (Ta=25°C) Ratings 2SA1667 2SA1668 ±0.2 VCEO sElectrical Characteristics 8.4±0.2 Ratings Symbol 2SA1667 2SA1668 VCBO –150 –200 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Application : TV Vertical Output, Audio Output Driver and General Purpose 1.35±0.15 1.35±0.15 sTypical Switching Characteristics (Common Emitter) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 –100 –0.4 0 –2 –4 –6 –8 –1 –10 –100 (V C E =–10V) 400 100 –0.1 –1 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 25˚C –30˚C 100 30 –0.01 –2 Collector Current I C (A) –0.1 –1 –2 0.5 1 2 Temp) at 0x he si nk –100 1 00x 1 0 10 ite –10 Collector-Emitter Voltage V C E (V) 150x150x2 fin 1 In Without Heatsink Natural Cooling 1.2SA1667 2.2SA1668 20 ith M aximu m Power Dissipat io n P C (W) C W Collector Curr ent I C (A) s 2 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s ms 1 –0.01 –1 1000 P c – T a Derating –0.1 10 –1.2 100 1m 20 5m D –1 20 ) 10 25 40 –1.0 Time t(ms) –5 30 –0.8 1 Safe Operating Area (Single Pulse) Typ –0.6 5 (V C E =–12V) 0.1 –0.4 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off Fr equ ency f T (M H Z ) D C Cur r ent Gai n h F E 125˚C Emitter Current I E (A) –0.2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 400 50 0 Base-Emittor Voltage V B E (V) (V C E =–10V) 0 0.01 0 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 40 –0.01 –0.8 –0.4 I C =–2A –2 –1.2 –1A –0 .5A Collector-Emitter Voltage V C E (V) –1.6 (Case –2 0 –10 –2 –30˚C I B =–5mA/Step (V C E =–10V) –3 Temp –1.2 I C – V BE Temperature Characteristics (Typical) mp) Collector Current I C (A) –1.6 0 0.5typ (Case A –0.8 1.5typ B C E e Te Collector-Emitter Saturation Voltage V C E (s at) (V ) –2.0 –5 0.4typ Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) V CE ( sa t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 0m 100 tstg (µs) (Cas 5 –10 ton (µs) IB2 (mA) 25˚C –1 20 IB1 (mA) 125˚C –20 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) RL (Ω) θ j- a (˚C /W ) VCC (V) 50x50x2 Without Heatsink 2 2 –300 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 25
  28. 28. 2SA1673 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388) Ratings VCBO –180 V VCEO –180 sElectrical Characteristics Unit External Dimensions FM100(TO3PF) (Ta=25°C) Unit VCB=–180V –10max µA V IEBO VEB=–6V –10max µA VEBO –6 V V(BR)CEO IC –15 A hFE –180min IC=–50mA VCE=–4V, IC=–3A 15.6±0.2 V 50min∗ VCE(sat) IC=–5A, IB=–0.5A –2.0max V W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C Tj Tstg 3.0 A 85(Tc=25°C) 3.3 –4 PC ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 1.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ 4.4 0 0 –1 –2 –3 0 –4 0 –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 Typ 100 50 125˚C 25˚C 100 –30˚C 50 20 –0.02 –5 –10 –15 f T – I E Characteristics (Typical) –0.1 –0.5 –1 –5 –10 –15 1 m 0m s s s C nk Collector-Emitter Voltage V C E (V) –200 si –100 at –10 he Without Heatsink Natural Cooling 60 ite –1 80 fin –2 –0.1 –3 1000 2000 P c – T a Derating –0.2 10 p) 100 Time t(ms) In Collecto r Cur rent I C (A) D –5 –0.5 ase Tem 10 ith 10 26 0.1 W 20 Emitter Current I E (A) 0.5 M aximu m Power Dissip ation P C (W) 10 10 –10 Typ 1 1 100 3m 0.1 3 –40 30 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) 0 0.02 –1 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (MH Z ) Transient Thermal Resistance DC Cur rent Gain h FE 300 –1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 mp) Temp ) I C =–10A –5A Collector-Emitter Voltage V C E (V) 10 –0.02 –5 –30˚C (C I B =–20mA –1 (Case –50mA –5 –10 25˚C –0 .1 A –2 e Te A Cas – 0 .2 –10 (V C E =–4V) ˚C ( A –15 125 –0.4 E – 3 Collector Current I C (A) 6A C Weight : Approx 6.5g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) –0. Collector-Emitter Saturation Voltage V C E (s at) (V ) A 3.35 V CE ( sat ) – I B Characteristics (Typical) –15 –1 B 0.65 +0.2 -0.1 1.5 tf (µs) I C – V CE Characteristics (Typical) 0.8 2.15 1.05 +0.2 -0.1 VCC (V) Collector Current I C (A) 1.75 5.45±0.1 sTypical Switching Characteristics (Common Emitter) DC Cur rent Gain h F E 3.45 ±0.2 ø3.3±0.2 a b 16.2 IB 5.5±0.2 5.5 ICBO 1.6 Ratings 9.5±0.2 Conditions Symbol 23.0±0.3 Symbol 0.8±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 20 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
  29. 29. 2SA1693 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466) sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=–80V –10max µA V IEBO VEB=–6V –10max µA V V(BR)CEO IC=–50mA –80min V –6 A hFE VCEO –80 VEBO IC 50min∗ VCE=–4V, IC=–2A a VCE(sat) IC=–2A, IB=–0.2A –1.5max V W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ C 0.21typ 0 0 –1 –2 –3 –4 –4A –2A 0 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 (V C E =–4V) 300 100 50 125˚C Transient Thermal Resistance DC Cur rent Gain h FE Typ –1 25˚C –30˚C 100 50 30 –0.02 –5 –6 –0.1 Collector Current I C (A) –0.5 –2 –1 –5 –6 5 1 0.5 0.3 1 10 Collector Current I C (A) f T – I E Characteristics (Typical) ) –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –1.5 Base Current I B (A) h FE – I C Characteristics (Typical) 30 –0.02 –2 I C =–6A Temp –1 (Case I B =–10mA –30˚C –20mA –2 –4 e Te mp) e Te mp) –30mA –2 (Cas –50mA 25˚C –4 Cas –8 0m A ˚C ( –1 00 m A (V C E =–4V) –6 –3 mA 125 – 0 15 Collector Current I C (A) 0 A I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/W) Collector Current I C (A) –2 0m Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –6 1.4 E tf (µs) –30 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 4.0max A 60(Tc=25°C) 20.0min –3 PC Tstg 4.8±0.2 b IB 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 10 –10 Typ ite he at si nk Collector Curr ent I C (A) fin Without Heatsink Natural Cooling 40 In –1 –0.5 ith DC W 10 s 100ms –5 20 m M aximum Power Dissipa ti on P C ( W) –20 30 Cut -off Fre quen cy f T (M H Z ) DC Curr ent Gain h FE 15.6±0.4 9.6 4.0 V 19.9±0.3 –80 1.8 ICBO VCBO Symbol Unit 5.0±0.2 Ratings Ratings 2.0 Conditions –6 Symbol 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 –0.1 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 27
  30. 30. 2SA1694 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4467) Application : Audio and General Purpose sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) External Dimensions MT-100(TO3P) (Ta=25°C) Unit –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE VCEO –120 VEBO IC –120min IC=–50mA V 19.9±0.3 V 50min∗ VCE=–4V, IC=–3A a VCE(sat) IC=–3A, IB=–0.3A –1.5max V W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2 3 1.05 +0.2 -0.1 5.45±0.1 sTypical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ C Weight : Approx 6.0g a. Part No. b. Lot No. 0.21typ V CE ( s a t ) – I B Characteristics (Typical) 0 –1 –2 –3 –4 –4A 0 (V C E =–4V) 300 100 50 –1 –5 125˚C Transient Thermal Resistance DC Curr ent Gain h FE Typ 25˚C 100 –30˚C 50 30 –0.02 –8 mp) e Te –0.5 –0.1 –0.5 f T – I E Characteristics (Typical) –1.5 –1 –5 –8 3 1 0.5 0.3 1 10 100 1000 Time t(ms) Collector Current I C (A) Collector Current I C (A) –1.0 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) –2A 0 Collector-Emitter Voltage V C E (V) 30 –0.02 mp) –2 I C =–8A (Cas I B =–10mA –1 –30˚C –2 –4 e Te –25mA –6 e Te –50mA –4 –2 (Cas –7 5m A Cas mA ˚C ( –100 125 5 (V CE =–4V) –8 Collector Current I C (A) –1 A 0m θ j - a ( ˚ C/W) 0 A Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 50 Collector Current I C (A) –3 –2 0m –6 0 I C – V BE Temperature Characteristics (Typical) –3 25˚C I C – V CE Characteristics (Typical) 1.4 E tf (µs) –40 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –8 2.0±0.1 ø3.2±0.1 4.0max A 80(Tc=25°C) 20.0min –3 PC Tstg 4.8±0.2 b IB D C Cur r ent Gai n h F E 15.6±0.4 9.6 1.8 VCB=–120V –120 5.0±0.2 ICBO VCBO Symbol 2.0 Ratings Unit 4.0 Conditions Ratings Symbol Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –20 10 si nk Co lle ctor Cu rren t I C (A) 40 at Without Heatsink Natural Cooling he –0.5 ite –1 60 fin Cut- off F req uency f T (MH Z ) DC In 10 s ith –5 Typ 20 100ms W –10 m Maxim um Power Dissip ation P C (W) 30 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 28 5 8 –0.1 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 12 5 Ambient Temperature Ta(˚C) 150
  31. 31. 2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics External Dimensions MT-100(TO3P) (Ta=25°C) Unit VCB=–140V –10max µA V IEBO VEB=–6V –10max µA V VCEO –140 VEBO –6 V V(BR)CEO IC –10 A hFE –140min IC=–50mA V 50min∗ VCE=–4V, IC=–3A 15.6±0.4 9.6 4.0 –140 a VCE(sat) IC=–5A, IB=–0.5A –0.5max V W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2 3 1.05 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 12 –5 –10 5 –0.5 0.5 0.17typ 1.86typ C 0.27typ I C – V BE Temperature Characteristics (Typical) –3 –10 –2 I B =–10mA –1 0 –2 –3 –4 –2 I C =–10A –5A 0 0 –0.5 Collector-Emitter Voltage V C E (V) –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 Typ 100 50 –1 –5 Transient Thermal Resistance DC Curr ent Gain h F E 125˚C –0.5 25˚C 100 –30˚C 50 30 –0.02 –10 –0.1 –0.5 –1 f T – I E Characteristics (Typical) –1.5 –1 –5 –10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) ) 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 30 –0.02 –4 Temp –1 (Case –25mA –6 –30˚C –50mA –4 –2 p) –7 5m A –6 –8 mp) mA Tem –100 se –8 e Te A (Ca 0m (Cas –15 ˚C 0 25˚C –2 (V C E =–4V) 125 0 A 0m Collector Current I C (A) –3 A 0m θ j- a ( ˚C/W) 00 mA Collector-Emitter Saturation Voltage V C E (s at) (V ) –4 Collector Current I C (A) Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) –10 0 1.4 E tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 B I C – V CE Characteristics (Typical) 2.0±0.1 ø3.2±0.1 4.0max A 100(Tc=25°C) 20.0min –4 PC Tstg 4.8±0.2 b IB Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 100 –0.1 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 nk Emitter Current I E (A) 10 si 1 50 at 0.1 he 0 0.02 ite ms Without Heatsink Natural Cooling fin 10 –0.5 In s –1 ith 3m s 10 DC –5 0m Typ 10 20 Co lle ctor Cu rren t I C ( A) –10 W Maximu m Power Diss ip ation P C (W) –30 30 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 1.8 ICBO VCBO Symbol 5.0±0.2 Ratings Unit 2.0 Conditions Ratings 19.9±0.3 Symbol Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 29
  32. 32. 2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) sElectrical Characteristics V(BR)CEO IC –6 A VEB=–6V hFE –10max µA IC=–25mA IEBO V –80min V 10.1±0.2 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –0.5max V 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tj Tstg –55 to +150 3.9 –3 PC ø3.3±0.2 a b 13.0min IB 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ –1 0 –1 0 –2 –3 0 –0.5 –1.0 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 300 100 50 125˚C Transient Thermal Resistance DC C urrent G ain h FE Typ –1 p) –0.5 0 25˚C –30˚C 100 50 30 –0.02 –5 –6 –0.1 Collector Current I C (A) –1.5 –0.5 –1 θ j-a – t Characteristics 5 1 0.5 0.4 1 –5 –6 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –1.5 Base Current I B (A) 300 ) –2A 0 –4 h FE – I C Characteristics (Typical) –0.1 Tem I C =–6A –4A Collector-Emitter Voltage V C E (V) 30 –0.02 –2 emp –1 –30˚C I B =–10mA se –20mA –2 se T –30mA –4 (Ca –3 –2 (Ca –50mA ˚C Collector Current I C (A) –4 25˚C A –8 0m A 125 –1 00 m –5 (V CE =–4V) –6 –3 Collector Current I C (A) mA I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) – 0 15 Collector-Emitter Saturation Voltage V C E (s at) (V ) –2 A Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( s a t ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) m 00 2.4±0.2 2.2±0.2 VCC (V) D C Cur r ent Gai n h F E 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 sTypical Switching Characteristics (Common Emitter) –6 4.2±0.2 2.8 c0.5 mp) V –6 µA e Te –80 VEBO –10max 4.0±0.2 VCEO VCB=–80V ICBO 0.8±0.2 V Unit ±0.2 –80 Ratings (Cas Unit VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions 8.4±0.2 Symbol Ratings 16.9±0.3 sAbsolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 30 –10 10 100ms si nk –0.1 at Without Heatsink Natural Cooling he –0.5 ite –1 20 fin 10 s DC In 20 m ith Collecto r Cur ren t I C (A) –5 W Cut -off Fre quen cy f T ( MH Z ) Typ M aximum Po wer Dissipat io n P C (W) –20 30 10 Without Heatsink 2 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 30 5 6 –0.05 –3 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150
  33. 33. 2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) sAbsolute maximum ratings (Ta=25°C) Application : Audio and General Purpose sElectrical Characteristics Symbol External Dimensions MT-25(TO220) (Ta=25°C) Unit VCB=–80V –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –80min V –6 A hFE –80 VEBO IC 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –0.5max V 50(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF –55 to +150 °C b ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Tstg 2.5 2.5 1.4 B C E VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ Weight : Approx 2.6g a. Part No. b. Lot No. tf (µs) –30 0.21typ 0 0 –1 –2 –3 –4 0 –0.5 –1.0 (V C E =–4V) 50 –5 –6 125˚C Transient Thermal Resistance DC Cur rent Gain h FE 100 25˚C –30˚C 100 50 30 –0.02 –0.1 Collector Current I C (A) –0.5 –1.5 –1 –5 –6 p) 5 1 0.5 0.4 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) Typ –1 –0.5 0 Base-Emittor Voltage V B E (V) 300 –0.5 0 –1.5 (V C E =–4V) 300 ) –2A 0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 Tem I C =–6A –4A Collector-Emitter Voltage V C E (V) 30 –0.02 –2 emp –1 –30˚C I B =–10mA se –20mA –2 –4 se T –30mA –2 (Ca –50mA (Ca –4 ˚C A –8 0m A 125 –1 00 m (V CE =–4V) –6 –3 A Collector Current I C (A) –1 m 50 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/ W) 0 A Collector-Emitter Saturation Voltage V C E (s at) (V) Collector Current I C (A) –2 0m V CE ( sa t ) – I B Characteristics (Typical) 25˚C I C – V CE Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 50 –10 10 100ms Typ 0.5 1 Emitter Current I E (A) 5 6 –0.05 –3 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 nk 0.05 0.1 si 0 0.02 at –0.1 he Without Heatsink Natural Cooling 30 ite –0.5 fin –1 40 In 10 s DC ith 20 m W Collector Curr ent I C (A) –5 Ma xim um Powe r Dissipation P C (W) –20 30 Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE 1.35 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) –6 2.0±0.1 ø3.75±0.2 a 4.0max –3 PC 12.0min IB 4.8±0.2 mp) VCEO 10.2±0.2 e Te V (Cas –80 3.0±0.2 ICBO VCBO 16.0±0.7 Ratings Unit 8.8±0.2 Conditions Ratings Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 1 25 150 Ambient Temperature Ta(˚C) 31
  34. 34. 2SA1746 LOW VCE (sat) Silicon PNP Epitaxial Planar Transistor sElectrical Characteristics Unit µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –50min V –12(Pulse–20) A hFE –50 VEBO 50min VCE=–1V, IC=–5A IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max PC 60(Tc=25°C) W VBE(sat) IC=–5A, IB=–80mA –1.2max 150 °C fT VCE=–12V, IE=1A 25typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 400typ pF 3.3 3.0 V 1.05 +0.2 -0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 4 –5 –10 5 –80 80 0.5typ 0.6typ 0.3typ 4.4 V CE ( sat ) – I B Characteristics (Typical) Weight : Approx 6.5g a. Part No. b. Lot No. I B =–10mA –2 0 0 –1 –2 –3 –4 –5 –3A 0 –3 –6 –10 –100 h FE – I C Temperature Characteristics (Typical) (V C E =–1V) 500 Typ 100 Transient Thermal Resistance 125˚C D C Cur r ent Gai n h F E 500 25˚C –30˚C 100 –5 –1 50 –0.03 –10 Collector Current I C (A) p) ) em emp eTe –0.5 –0.1 –0.5 –1.0 –1.5 –5 –1 –10 θ j-a – t Characteristics 4 1 0.5 0.2 1 10 100 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 40 0 Base-Emittor Voltage V B E (V) (V C E =–1V) –0.5 0 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.1 seT –2 –5A –1A Collector-Emitter Voltage V C E (V) 50 –0.03 –4 I C =–10A (Cas –0.5 –30˚C –4 –6 seT –30m A –8 (Ca –6 –1.0 (Ca –50mA ˚C –8 –10 125 Collector Current I C (A) –70mA (V C E =–1V) 25˚C –10 E –12 –1.5 Collector Current I C (A) –100 mA C I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) –12mA Collector-Emitter Saturation Voltage V C E (s a t) (V ) –12 B 3.35 1.5 tf (µs) –20 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) D C Cur r ent Gai n h F E 1.75 16.2 Tstg 3.45 ±0.2 ø3.3±0.2 a b V Tj 5.5±0.2 mp) VCEO 15.6±0.2 5.5 –10max V 1.6 VCB=–70V –70 9.5±0.2 ICBO VCBO Symbol 23.0±0.3 Ratings Unit IC External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Ratings Symbol 0.8±0.2 sAbsolute maximum ratings (Ta=25°C) Application : Chopper Regulator, Switch and General Purpose 60 –30 10 s s at si 20 nk Collector Curre nt I C (A) he Without Heatsink Natural Cooling ite –1 fin 10 40 In 20 –5 ith Cu t-of f Fr eque ncy f T (MH Z ) m Typ W Maxim um Power Dissip ation P C (W) 0µ s 10 1m –10 30 Without Heatsink 0 0.1 1 Emitter C urrent I E (A) 32 10 –0.3 –3 –10 –50 Collector-Emitter Voltage V C E (V) –100 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150
  35. 35. 2SA1859/1859A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) –150 VCB= –180 V VEB=–6V IC –2 A µA IC=–10mA V(BR)CEO –10max –150min –180min 60 to 240 V IEBO –1 A hFE VCE=–10V, IC=–0.7A PC 20(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–70mA –1.0max V Tj 150 °C fT VCE=–12V, IE=0.7A 60typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 30typ pF 13.0min Tstg 3.9 IB 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) –20 20 –1 –10 5 –100 100 0.5typ 1.0typ 0.5typ Weight : Approx 6.5g a. Part No. b. Lot No. tf (µs) –4 –6 –8 0 –2 –10 Collector-Emitter Voltage V C E (V) –5 –10 –50 –100 (V C E =–4V) 300 DC Cur rent Gain h FE 125˚C Typ 100 –1 25˚C 100 –30˚C 50 –0.01 –2 f T – I E Characteristics (Typical) p) eTem (Cas –1 –0.1 –0.5 –1 –2 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) 25˚C –0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 –500 –1000 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 –0.01 mp) –1A θ j - a (˚ C/W) –2 0 I C =–2A –0.5A Transient Thermal Resistance 0 –1 –1 eTe I B =–5mA Cas –1 –2 ˚C ( –10 mA (V C E =–4V) –2 –3 125 5mA I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) A A 0m –3 0m 00 –1 –6 m A –2 –1 B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) Collector Current I C (A) 1.35±0.15 2.54 sTypical Switching Characteristics (Common Emitter) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 20 –5 nk Collector Cur rent I C (A) si Collector-Emitter Voltage V C E (V) 10 at 2 –50 –100 –200 he –10 ite 1 –5 fin –0.01 –1 Without Heatsink Natural Cooling 1.2SA1859 2.2SA1859A In –0.5 ith –0.1 W 2 s 1 s Emitter Current I E (A) 0.5 0m 0.1 C –0.5 20 0.05 ms 40 10 60 0 0.01 D –1 Typ 1m 10 80 M aximum Po wer Dissipat io n P C (W) 100 Cut -off Fre quen cy f T ( MH Z ) DC Curr ent Gain h F E ø3.3±0.2 a b p) V aseTem V –6 4.2±0.2 2.8 c0.5 –30˚C (C –180 VEBO 10.1±0.2 µA –10max ICBO 4.0±0.2 –150 V External Dimensions FM20(TO220F) Unit 0.8±0.2 VCEO –180 Conditions 8.4±0.2 –150 Symbol 16.9±0.3 VCBO Unit (Ta=25°C) Ratings 2SA1859 2SA1859A ±0.2 sElectrical Characteristics sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SA1859 2SA1859A Application : Audio Output Driver and TV Velocity-modulation 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 33
  36. 36. 2SA1860 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Unit µA V IEBO VEB=–5V –100max µA IC=–25mA –150min V VEBO –5 V V(BR)CEO IC –14 A hFE A VCE(sat) 80(Tc=25°C) W fT 150 °C COB –55 to +150 °C –2.0max MHz 400typ pF ø3.3±0.2 a b V 50typ VCB=–10V, f=1MHz –3 PC IC=–5A, IB=–500mA VCE=–12V, IE=2A IB Tstg 50min∗ VCE=–4V, IC=–5A ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.75 1.05 +0.2 -0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 12 –5 –10 5 –500 500 0.25typ 0.85typ 0.2typ 1.5 Weight : Approx 6.5g a. Part No. b. Lot No. –1 –2 –3 –4 0 0 –0.2 –0.4 Collector-Emitter Voltage V C E (V) –0.6 –0.8 (V C E =–4V) 200 200 Typ 50 –0.5 –1 –5 Transient Thermal Resistance DC Cur rent Gain h FE 125˚C –0.1 25˚C 100 –30˚C 50 30 –0.02 –10 –14 –0.1 –0.5 f T – I E Characteristics (Typical) p) emp ) p) Cas eT Tem Tem ˚C ( se –1 –2 –1 –5 θ j-a – t Characteristics –10 –14 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) ase 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 20 –0.02 0 –1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 (Ca –5A θ j- a ( ˚C/W) 0 –5 I C =–10A –30 I B =–20mA –1 C (C –50mA –5 –10 25˚ –100 mA –2 ˚C –1 50 m A (V C E =–4V) 125 mA E –14 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) 00 –7 –200 C 3.35 I C – V BE Temperature Characteristics (Typical) –3 A m mA mA mA 00 500 400 00 – –3 –6 – –10 0 B V CE ( sat ) – I B Characteristics (Typical) mA –14 Collector Current I C (A) 4.4 tf (µs) –60 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 sTypical Switching Characteristics (Common Emitter) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –40 10 –10 si nk Collect or Cur ren t I C (A) 40 at Without Heatsink Natural Cooling he –0.5 ite –1 60 fin 20 s –5 In 40 C s s ith Typ m W D 60 10 0m 1m M aximum Power Dissipa ti on P C (W) 80 Cu t-off Fre quen cy f T (M H Z ) DC Cur rent Gain h FE 3.45 ±0.2 3.0 –150 5.5±0.2 3.3 VCEO 15.6±0.2 5.5 –100max V 1.6 VCB=–150V –150 9.5±0.2 ICBO VCBO Symbol 23.0±0.3 Ratings Unit Tj External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Ratings 16.2 Symbol Application : Audio and General Purpose 0.8±0.2 LAPT 20 –0.1 0 0.02 0.1 1 Emitter Current I E (A) 34 10 –0.05 –2 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150

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