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CM600DY-12NFのデータシート

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CM600DY-12NFのデータシート

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CM600DY-12NFのデータシート

  1. 1. MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USE CM600DY-12NF ¡IC ................................................................... 600A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a packAPPLICATIONGeneral purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 110 93±0.25 14 14 14 4 E2 G2 6 62±0.25 (20.5) 80 30 15 G1 E1 6 C2E1 E2 C1 3-M6 NUTS 25 25 21.5 4-φ6.5 MOUNTING HOLES E2 G2 18 7 18 7 18 TAB #110. t=0.5 8.5 C2E1 E2 C1 +1.0 –0.5 21.2 LABEL G1 E1 29 CIRCUIT DIAGRAM Mar.2003
  2. 2. MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USEMAXIMUM RATINGS (Tj = 25°C) Symbol Parameter Conditions Ratings Unit VCES Collector-emitter voltage G-E Short 600 V VGES Gate-emitter voltage C-E Short ±20 V IC DC, TC’ = 89°C*3 600 A Collector current ICM Pulse (Note 2) 1200 A IE (Note 1) 600 A Emitter current IEM (Note 1) Pulse (Note 2) 1200 A PC (Note 3) Maximum collector dissipation TC = 25°C 1130 W Tj Junction temperature –40 ~ +150 °C Tstg Storage temperature –40 ~ +125 °C Viso Isolation voltage Main Terminal to base plate, AC 1 min. 2500 V — Main Terminal M6 3.5 ~ 4.5 N•m Torque strength — Mounting holes M6 3.5 ~ 4.5 N•m — Weight Typical value 580 gELECTRICAL CHARACTERISTICS (Tj = 25°C) Limits Symbol Parameter Test conditions Unit Min. Typ. Max. ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V 5 6 7.5 V IGES Gate leakage current VGE = VGES, VCE = 0V — — 0.5 µA Tj = 25°C — 1.7 2.2 VCE(sat) Collector-emitter saturation voltage IC = 600A, VGE = 15V V Tj = 125°C — 1.7 — Cies Input capacitance — — 90 nF VCE = 10V Coes Output capacitance — — 11 nF VGE = 0V Cres Reverse transfer capacitance — — 3.6 nF QG Total gate charge VCC = 300V, IC = 600A, VGE = 15V — 2400 — nC td(on) Turn-on delay time — — 500 ns tr Turn-on rise time VCC = 300V, IC = 600A — — 300 ns td(off) Turn-off delay time VGE1 = VGE2 = 15V — — 750 ns tf Turn-off fall time RG = 4.2Ω, Inductive load switching operation — — 300 ns trr (Note 1) Reverse recovery time IE = 600A — — 250 ns Qrr (Note 1) Reverse recovery charge — 8.7 — µC VEC(Note 1) Emitter-collector voltage IE = 600A, VGE = 0V — — 2.6 V Rth(j-c)Q IGBT part (1/2 module) — — 0.11 °C/W Thermal resistance*1 Rth(j-c)R FWDi part (1/2 module) — — 0.18 °C/W Rth(c-f) Contact thermal resistance Case to fin, Thermal compound Applied*2 (1/2 module) — 0.02 — °C/W Rth(j-c’)Q Thermal resistance Tc measured point is just under the chips — — 0.046*3 °C/W RG External gate resistance 1.0 — 10 Ω*1 : Tc measured point is shown in page OUTLINE DRAWING.*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.*3 : Tc’ measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips.Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Mar.2003
  3. 3. MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USEPERFORMANCE CURVES COLLECTOR-EMITTER SATURATION OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS (TYPICAL) (TYPICAL) 1200 4 SATURATION VOLTAGE VCE (sat) (V) VGE = 15 Tj = 25°C VGE = 15V 20V COLLECTOR CURRENT IC (A) 1000 13 COLLECTOR-EMITTER 12 3 800 600 2 11 400 1 10 200 Tj = 25°C 8 9 Tj = 125°C 0 0 0 2 4 6 8 10 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL) 10 104 SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C 7 5 EMITTER CURRENT IE (A) 3 8 COLLECTOR-EMITTER 2 103 6 7 5 3 2 4 IC = 600A 102 IC = 1200A 7 5 2 3 Tj = 25°C IC = 240A 2 Tj = 125°C 0 101 6 8 10 12 14 16 18 20 0 1 2 3 4 5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE HALF-BRIDGE CHARACTERISTICS SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 103 103 7 7 td(off) CAPACITANCE Cies, Coes, Cres (nF) 5 5 td(on) 3 3 tf SWITCHING TIME (ns) 2 2 102 102 7 Cies 7 5 5 tr 3 3 2 2 Conditions: 101 101 VCC = 300V 7 Coes 7 5 5 VGE = ±15V 3 3 RG = 4.2Ω 2 Cres 2 Tj = 125°C VGE = 0V Inductive load 100 –1 100 1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) Mar.2003
  4. 4. MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USE TRANSIENT THERMAL REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS OF FREE-WHEEL DIODE (IGBT part & FWDi part) (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101REVERSE RECOVERY CURRENT lrr (A) 103 100 REVERSE RECOVERY TIME trr (ns) 7 7 THERMAL IMPEDANCE Zth (j–c) 5 Single Pulse NORMALIZED TRANSIENT 5 3 TC = 25°C 2 3 2 10–1 10–1 Irr 7 7 5 5 102 trr 3 3 7 2 2 Conditions: IGBT part: 5 10–2 Per unit base = 10–2 VCC = 300V 7 7 3 VGE = ±15V 5 Rth(j–c) = 0.11°C/W 5 RG = 4.2Ω FWDi part: 2 3 3 Tj = 25°C 2 Per unit base = 2 Inductive load Rth(j–c) = 0.18°C/W 101 1 10–3 10–3 10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 600A GATE-EMITTER VOLTAGE VGE (V) VCC = 200V 16 VCC = 300V 12 8 4 0 0 1000 2000 3000 500 1500 2500 3500 GATE CHARGE QG (nC) Mar.2003

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