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Si1029X

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Datasheet of Si1029X

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Si1029X

  1. 1. Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) () ID (mA) • Halogen-free According to IEC 61249-2-21 Definition 1.40 at VGS = 10 V 500 N-Channel 60 • TrenchFET® Power MOSFETs 3 at VGS = 4.5 V 200 • Very Small Footprint 4 at VGS = - 10 V - 500 • High-Side Switching P-Channel - 60 • Low On-Resistance: 8 at VGS = - 4.5 V - 25 N-Channel, 1.40  P-Channel, 4  • Low Threshold: ± 2 V (typ.) SC-89 • Fast Switching Speed: 15 ns (typ.) • Gate-Source ESD Protected: 2000 V S1 1 6 D1 • Compliant to RoHS Directive 2002/95/EC Marking Code: H G1 2 5 G2 BENEFITS • Ease in Driving Switches D2 3 4 S2 • Low Offset (Error) Voltage • Low-Voltage Operation Top View • High-Speed CircuitsOrdering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel P-Channel Parameter Symbol 5s Steady State 5s Steady State Unit Drain-Source Voltage VDS 60 - 60 V Gate-Source Voltage VGS ± 20 TA = 25 °C 320 305 - 200 - 190 Continuous Drain Current (TJ = 150 °C)a ID TA = 85 °C 230 220 - 145 - 135 mA Pulsed Drain Currentb IDM 650 - 650 Continuous Source Current (Diode Conduction)a IS 450 380 - 450 - 380 TA = 25 °C 280 250 280 250 Maximum Power Dissipationa PD mW TA = 85 °C 145 130 145 130 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 VNotes:a. Surface mounted on FR4 board.b. Pulse width limited by maximum junction temperature.Document Number: 71435 www.vishay.comS10-2432-Rev. C, 25-Oct-10 1
  2. 2. Si1029XVishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VGS = 0 V, ID = 10 µA N-Ch 60 Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 10 µA P-Ch - 60 V VDS = VGS, ID = 250 µA N-Ch 1 2.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA P-Ch -1 - 3.0 N-Ch ± 50 VDS = 0 V, VGS = ± 5 V P-Ch ± 100 Gate-Body Leakage IGSS N-Ch ± 150 VDS = 0 V, VGS = ± 10 V P-Ch ± 200 nA VDS = 50 V, VGS = 0 V N-Ch 10 VDS = - 50 V, VGS = 0 V P-Ch - 25 Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V, TJ = 85 °C N-Ch 100 VDS = - 50 V, VGS = 0 V, TJ = 85 °C P-Ch - 250 VDS = 10 V, VGS = 4.5 V N-Ch 500 VDS = - 10 V, VGS = - 4.5 V P-Ch - 50 On-State Drain Currenta ID(on) mA VDS = 7.5 V, VGS = - 4.5 V N-Ch 800 VDS = - 10 V, VGS = - 10 V P-Ch - 600 VGS = 4.5 V, ID = 200 mA N-Ch 3 VGS = - 4.5 V, ID = - 25 mA P-Ch 8 Drain-Source On-State VGS = 10 V, ID = 500 mA N-Ch 1.40 RDS(on)  Resistancea VGS = - 10 V, ID = - 500 mA P-Ch 4 VGS = 10 V, ID = 500 mA, TJ = 125 °C N-Ch 2.50 VGS = - 10 V, ID = - 500 mA, TJ = 125 °C P-Ch 6 VDS = 10 V, ID = 200 mA N-Ch 200 Forward Transconductancea gfs ms VDS = - 10 V, ID = - 100 mA P-Ch 100 IS = 200 mA, VGS = 0 V N-Ch 1.4 Diode Forward Voltagea VSD V IS = - 200 mA, VGS = 0 V P-Ch - 1.4 Dynamicb N-Ch 750 Total Gate Charge Qg N-Channel P-Ch 1700 VDS = 10 V, VGS = 4.5 V, ID = 250 mA N-Ch 75 Gate-Source Charge Qgs pC P-Channel P-Ch 260 VDS = - 30 V, VGS = - 15 V, ID = - 500 mA N-Ch 225 Gate-Drain Charge Qgd P-Ch 460 N-Ch 30 Input Capacitance Ciss N-Channel P-Ch 23 VDS = 25 V, VGS = 0 V, f = 1 MHz N-Ch 6 Output Capacitance Coss pF P-Channel P-Ch 10 VDS = - 25 V, VGS = 0 V, f = 1 MHz N-Ch 3 Reverse Transfer Capacitance Crss P-Ch 5 N-Channel N-Ch 15 Turn-On Timec tON VDD = 30 V, RL = 150  ID  200 mA, VGEN = 10 V, Rg = 10  P-Ch 20 ns P-Channel N-Ch 20 Turn-Off Timec tOFF VDD = - 25 V, RL = 150  ID  - 165 mA, VGEN = - 10 V, Rg = 10  P-Ch 35Notes:a. Pulse test; pulse width  300 µs, duty cycle  2 %.b. Guaranteed by design, not subject to production testing.c. Switching time is essentially independent of operating temperature.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.www.vishay.com Document Number: 714352 S10-2432-Rev. C, 25-Oct-10
  3. 3. Si1029X Vishay SiliconixN-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 1200 6V VGS = 10 V thru 7 V TJ = - 55 °C 5V 0.8 900 I D - Drain Current (mA) I D - Drain Current (A) 25 °C 0.6 125 °C 600 4V 0.4 300 0.2 3V 0.0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 50 VGS = 0 V 3.5 f = 1 MHz 40 R DS(on) - On-Resistance ( ) 3.0 C - Capacitance (pF) 2.5 30 2.0 VGS = 4.5 V Ciss 20 1.5 VGS = 10 V 1.0 Coss 10 Crss 0.5 0.0 0 0 200 400 600 800 1000 0 5 10 15 20 25 I D - Drain Current (mA) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 7 2.0 6 VDS = 10 V VGS = 10 V at 500 mA VGS - Gate-to-Source Voltage (V) ID = 250 mA 1.6 R DS(on) - On-Resistance 5 (Normalized) 1.2 VGS = 4.5 V 4 at 200 mA 3 0.8 2 0.4 1 0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction TemperatureDocument Number: 71435 www.vishay.comS10-2432-Rev. C, 25-Oct-10 3
  4. 4. Si1029XVishay SiliconixN-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 5 VGS = 0 V 4 R DS(on) - On-Resistance ( ) I S - Source Current (A) 100 3 TJ = 125 °C 2 ID = 500 mA 10 TJ = 25 °C ID = 200 mA 1 TJ = - 55 °C 1 0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 0.2 ID = 250 µA V GS(th) Variance (V) 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperaturewww.vishay.com Document Number: 714354 S10-2432-Rev. C, 25-Oct-10
  5. 5. Si1029X Vishay SiliconixP-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.0 1200 VGS = 10 V TJ = - 55 °C 7V 0.8 8V 900 I D - Drain Current (mA) I D - Drain Current (A) 25 °C 0.6 6V 125 °C 600 0.4 5V 300 0.2 4V 0.0 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 20 40 VGS = 0 V VGS = 4.5 V 32 16 R DS(on) - On-Resistance ( ) Ciss C - Capacitance (pF) 12 24 VGS = 5 V 8 16 Coss VGS = 10 V 4 8 Crss 0 0 0 200 400 600 800 1000 0 5 10 15 20 25 I D - Drain Current (mA) V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 15 1.8 ID = 500 mA 1.5 VGS - Gate-to-Source Voltage (V) 12 VDS = 30 V VGS = 10 V at 500 mA R DS(on) - On-Resistance VDS = 48 V 1.2 (Normalized) 9 VGS = 4.5 V at 25 mA 0.9 6 0.6 3 0.3 0 0.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction TemperatureDocument Number: 71435 www.vishay.comS10-2432-Rev. C, 25-Oct-10 5
  6. 6. Si1029XVishay SiliconixP-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1000 10 VGS = 0 V 8 ID = 500 mA R DS(on) - On-Resistance ( ) I S - Source Current (A) 100 6 TJ = 125 °C 4 10 ID = 200 mA TJ = 25 °C 2 TJ = - 55 °C 1 0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 0.4 ID = 250 µA 0.3 VGS(th) Variance (V) 0.2 0.1 0.0 - 0.1 - 0.2 - 0.3 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperaturewww.vishay.com Document Number: 714356 S10-2432-Rev. C, 25-Oct-10
  7. 7. Si1029X Vishay SiliconixN- OR P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient 1 Duty Cycle = 0.5 Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 0.02 t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-AmbientVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?71435.Document Number: 71435 www.vishay.comS10-2432-Rev. C, 25-Oct-10 7
  8. 8. Package Information Vishay SiliconixSC89: 6Ć LEADS (SOTĆ563F) 2 3 D aaa C 4 E1/2 e1 2X A 4 B ÎÎÎÎÎÎ 6 ÎÎÎÎÎÎ 5 4 D ÎÎÎÎÎÎ ÎÎÎÎÎ SECTION B-B E/2 ÎÎÎÎÎ C 6 2 3 E1 E ÎÎÎÎÎ 2X DETAIL “A” aaa C ÎÎÎÎÎÎ 1 2 3 2X 5 e ÎÎÎÎÎÎ bbb C B 6X b 4 ccc M C A–B D ÎÎÎÎÎÎ ÎÎÎÎÎÎ A1 L L1 ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ A ÎÎÎÎÎÎ A1 SEE DETAIL “A” ÎÎÎÎÎÎ ÎÎÎÎÎÎ MILLIMETERS Tolerances Of Form And Dim Min Max Note Symbol Position NOTES: A 0.56 0.60 aaa 0.10 1. Dimensions in millimeters. A1 0.00 0.10 bbb 0.10 2. 2 Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed b 0.15 0.30 ccc 0.10 0.15 mm per dimension E1 does not include interlead flash or c 0.10 0.18 protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. D 1.50 1.70 2, 3 3. 3 Dimensions D and E1 are determined at the outmost extremes E 1.55 1.70 of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between E1 1.20 BSC 2, 3 the top and the bottom of the plastic body. e 0.50 BSC4.4 Datums A, B and D to be determined 0.10 mm from the lead tip. e1 1.00 BSC L 0.35 BSC 5. 5 Terminal numbers are shown for reference only. L1 0.20 BSC 6. 6 These dimensions apply to the flat section of the lead between ECN: E-00499—Rev. B, 02-Jul-01 0.08 mm and 0.15 mm from the lead tip. DWG: 5880Document Number: 71612 www.vishay.com25-Jun-01 1
  9. 9. Application Note 826 Vishay SiliconixRECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) (0.478) 0.019 (0.798) (1.753) 0.031 0.069 0.012 0.020 (0.300) (0.500) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to IndexReturn to Index APPLICATION NOTEDocument Number: 72605 www.vishay.comRevision: 21-Jan-08 21
  10. 10. Legal Disclaimer Notice www.vishay.com Vishay DisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVERELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any otherdisclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose orthe continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and allliability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particularpurpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typicalrequirements that are often placed on Vishay products in generic applications. Such statements are not binding statementsabout the suitability of products for a particular application. It is the customer’s responsibility to validate that a particularproduct with the properties described in the product specification is suitable for use in a particular application. Parametersprovided in datasheets and/or specifications may vary in different applications and performance may vary over time. Alloperating parameters, including typical parameters, must be validated for each customer application by the customer’stechnical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainingapplications or for any other application in which the failure of the Vishay product could result in personal injury or death.Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Pleasecontact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or byany conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category PolicyVishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill thedefinitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Councilof June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment(EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm thatall the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Freerequirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make referenceto the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21conform to JEDEC JS709A standards.Revision: 02-Oct-12 1 Document Number: 91000

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