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PARCIAL
PARCIAL
PARCIAL
laura26catalina
journal.pone.0076130
journal.pone.0076130
Amelia Chen
Trabajo de tutoria,
Tutoria( Alba Jiménez Plata)
Tutoria( Alba Jiménez Plata)
Albajimenez96
Abstract. The sheet resistance of tin oxide based thick-film resistors exhibits two regions of temperature dependence, described by hopping (23°C-200°C) and diffusion mechanisms (200°C-350°C), respectively. Annealing these samples causes the sheet resistance to increase in both regions. In the post-annealed samples, the hopping conduction range is extended by 50°C (23°C-250°C) while the hopping parameter, To, is decreased by more than 50%. The activation energy of diffusion (0.60 eV) is the same for both pre- and post annealed samples, but the magnitude of resistance in the diffusion controlled region is increased significantly as a result of annealing. These changes are explained in terms of a net decrease in the concentration of tin ions in the glass matrix. From a careful microstructural study it was found that a conduction path composed of tin-oxide grains or their clusters in contact with each other does not exist in the present system. HREM micrographs showed the presence of nanocrystalline tin-oxide particles in the glass phase separating the tin-oxide grain clusters. Estimated average separation between the nanocrystals in 4 nm, consistent with a variable-range hopping conduction via the dissolved tin ions in the glass matrix.
Annealing and Microstructural Characterization of Tin-Oxide Based Thick Film ...
Annealing and Microstructural Characterization of Tin-Oxide Based Thick Film ...
Anis Rahman
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PARCIAL
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laura26catalina
journal.pone.0076130
journal.pone.0076130
Amelia Chen
Trabajo de tutoria,
Tutoria( Alba Jiménez Plata)
Tutoria( Alba Jiménez Plata)
Albajimenez96
Abstract. The sheet resistance of tin oxide based thick-film resistors exhibits two regions of temperature dependence, described by hopping (23°C-200°C) and diffusion mechanisms (200°C-350°C), respectively. Annealing these samples causes the sheet resistance to increase in both regions. In the post-annealed samples, the hopping conduction range is extended by 50°C (23°C-250°C) while the hopping parameter, To, is decreased by more than 50%. The activation energy of diffusion (0.60 eV) is the same for both pre- and post annealed samples, but the magnitude of resistance in the diffusion controlled region is increased significantly as a result of annealing. These changes are explained in terms of a net decrease in the concentration of tin ions in the glass matrix. From a careful microstructural study it was found that a conduction path composed of tin-oxide grains or their clusters in contact with each other does not exist in the present system. HREM micrographs showed the presence of nanocrystalline tin-oxide particles in the glass phase separating the tin-oxide grain clusters. Estimated average separation between the nanocrystals in 4 nm, consistent with a variable-range hopping conduction via the dissolved tin ions in the glass matrix.
Annealing and Microstructural Characterization of Tin-Oxide Based Thick Film ...
Annealing and Microstructural Characterization of Tin-Oxide Based Thick Film ...
Anis Rahman
Super copa gaúcha artilharia
Super copa gaúcha artilharia
Super copa gaúcha artilharia
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Tortuguita nos dejó
Tortuguita nos dejó
Cristina Escudero Mingo
LAPORAN ALGORITMA
Modul xi dan xii algo
Modul xi dan xii algo
STMIK AKAKOM
La navidad2
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fabi987
BrunswickMarketingPlan
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haitham elshennawy
Nano-Clear Industrial coating was applied to new epoxy paint in a demonstration to confirm NCI's physical properties. The car shall be review after a year of service.
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Elaine Teixeira
Nano-Clear industrial coating was applied to highly oxidized paint on an above ground storage tank. The Nano-Clear penetrated and fortified the oxidized paint creating a "tough" protective coating system that will extend the tank protection for many more years than re-painting at half the cost.
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