www.yoursww8.tk JNTU ONLINE EXAMINATIONS [Mid 2 - EEE] www.worldwebsites8.blogspot.com1. _ _ _ _ _ _ _ _ _ converts weak s...
56. In a common base connection, current amplification factor is 0.9. If the emitter current is 1 mA, then collector curre...
104. In Magneto static defluxion system defluxion will be in :->Circular path105. In Magneto static defluxion system deflu...
156. The No load Voltage in the case of Half Wave Rectifier is _ _ _ _ _ _ :->157. The normal way to close an SCR is by ap...
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  1. 1. www.yoursww8.tk JNTU ONLINE EXAMINATIONS [Mid 2 - EEE] www.worldwebsites8.blogspot.com1. _ _ _ _ _ _ _ _ _ converts weak signal into strong signal. :->amplifier2. _ _ _ _ _ _ _ can be converted into an instrument to measure voltage, current and resistance for both AC and DC applications :->MovingMagnetic coil www.worldwebsites8.blogspot.com3. _ _ _ _ _ _ _ converts sinusoidal signal to unidirectional flow and not pure D.C :->Rectifier4. _ _ _ _ _ _ is a circuit which offers low resistance to the current in one direction and high resistance in the opposite direction. :->Rectifier5. _ _ _ _ _ _ is the disadvantage of Half Wave Rectifier. :->High Ripple Factor6. A hole is the vacancy created when: :- >an electron breaks its covalent band7. A N-type semiconductor impur ities are: :-> tetravalent8. A P-N junction diode s dynamic conductance is directly proportional to :->the current9. A PNPN diode::->is always made of silicon10. A p-type semiconductor impurities are :->pentavalent11. A p-type semiconductor is having _ _ _ _ _ _ _ impur ities: :-> boron12. A p-type semiconductor is having _ _ _ _ _ _ _ impur ities: :-> boron13. A transistor has _ _ _ _ _ _ _ _ PN junctions. :-> two tk14. A weak signal applied in the input circuit of transistor appears in the amplified form in the _ _ _ __ circuit. :-> Collector15. Accumulation of electr on at fluorescent screen causes :-> Will repel the electron beam.16. Accuracy of a Digital Instruments is _ _ _ _ _ _ _ _ _ _ _ :->Difference between actual value and measured value 8.17. After firing an SCR, if the gate pulse is removed , the SCR current: :->remain the same18. Ammeter is used to measure _ _ _ _ _ _ _ _ _ :->Current only19. An n-type semiconductor is having _ _ _ _ _ _ _ _ impurities: :->silicon w20. An n-type semiconductor is having _ _ _ _ _ _ _ impurities: :->silicon21. An SCR is a _ _ _ _ _ _ _ _ switch. :->unidirectional www.worldwebsites8.blogspot.com22. Any voltage that is connected across a P-N junction is called _ _ _ _ _ _ _ _ voltage. :->Bias w23. BJT is a _ _ _ _ _ _ _ _ _ terminal semi-conductor switching device. :->324. Bridge Rectifier consists of _ _ _ _ _ _ _ _ number of diodes :->Four25. Defluxion factor of CRT is :->Inverse of sensitivit y rs26. Defluxion sensitivity is defined as the ratio of :->Deflection on screen and applied voltage on defluxion on plates27. Digital voltmeters use _ _ _ _ _ _ _ _ for display :->A/D converters28. Electric instruments are used in _ _ _ _ _ _ _ _ _ applications :->High voltage measurement ou29. Electro static defluxion system used in _ _ _ _ _ _ _ _ _ applications :->Both Television CRT and Low Frequency applications30. Electron gun in C.R.T consists of _ _ _ _ _ _ _ components :->Heated cathode, Focusing anode, control grid and acceleratingelectrodes31. Electron vacancy distribution of an Si atom is :->2, 8 , 432. Electronic ind icating meters work on the principal o f :-> Motor principal and its current responding device .y33. Electronic instruments are used in _ _ _ _ _ _ _ _ _ _ applications :-> Very sensitive voltage measurement34. Energy required to break a covalent in a semiconductor is: :-> Equal to the width of the forbidden energy gap35. Expand BJT :-> Bi Polar Junction Transistor w36. Expand C.R.O :-> Cathode Ray Oscilloscope37. Expand C.R.T :->Cathode Ray Tube38. Extrinsic semiconductor means :-> Pure semiconductor without any impurities w39. For a silicon diode, the value of the forward-bias voltage typically :-> must be greater than 0.7 V40. For active reg ion operation of a NPN transistor: :->Emitter is negative with respect to base41. For active reg ion operation of a PNP transistor: :->Emitter is positive with respect to base w42. Full scale range of a Digital Instruments is _ _ _ _ _ _ _ _ _ :->Difference between actual value and measured value43. Full Wave Rectifier consists of _ _ _ _ _ _ _ _ number of diodes :->Two44. Generally used small signal amplifier transistors are: :->NPN silicon transistor in plastic packages45. Germanium atom co ntains: :->Four valence electrons46. Grid Bias Control is a use to :->Brightness variation47. Half Wave Rectifier consists of _ _ _ _ _ _ _ _ number of diodes :->One48. If emitter current in a transistor is 1 mA, then collector current Is nearly _ _ _ _ _ _ _ _ _ : ->1mA49. If negative potential on control grid of CRT is increased, the intensity of Of spot is _ _ _ _ _ _ _ _ _ : ->decreased50. If the firing angle in an SCR rectifier is increased, output is _ _ _ _ _ _ _ _ :->decreased51. If the supply voltage exceeds the breakover voltage of SCR, then SCR is _ _ _ _ _ _ _ :->destroyed52. In _ _ _ _ _ _ _ _ _ C.R.O is used applications :->Visual observation, Measurement and Analysis53. In a BJT , with a = _ _ _ _ _ _ _ :->54. In a BJT , with a = 0.98, equals : :->4955. In a BJT , with_= 100, a equals: :->0.99 www.worldwebsites8.blogspot.com
  2. 2. 56. In a common base connection, current amplification factor is 0.9. If the emitter current is 1 mA, then collector current IC is _ :->0.9 mA57. In a common base connection, current amplification factor is 0.9. If the emitter current is 1 mA, then collector current IC is _ :->0.9mA58. In a common base connection, IC = 0.95mA and IB = 0.05mA. The value of a is _ _ _ _ _ :->0.9559. In a common base connection, IE = 1 mA, IC = 0.95mA. Then the Value of IB is _ _ _ _ _ _ _ _ _ :->0.05mA60. In a common base connection, IE = 1 mA, IC = 0.95mA. Then the Value of IB is _ _ _ _ _ _ _ _ :->0.05mA61. In a forward biased PN diode, the injected hole current in the n-region Is proportional to: _ _ _ _ (if Q is the total stored charge) :->Q62. In a full-wave rectifier , if a.c supply frequency is 50hz , then a.c. ripple in The output is _ _ _ _ _ _ _ :->100hz63. In a half wave rectifier , maximum value of current , Im is 189, then Root mean square value(Irms) value is _ _ :->94.5 mA64. In a PN diode ,hole diffuse from p-region to n-region because: :->there is higher concentration of holes in the p-region65. In a PN diode, with the increase of reverse bias, the reverse current: :->remains constant66. In a PN junction in N-type semiconductor bar _ _ _ _ _ _ _ , _ _ _ _ _ _ _ exists :->Electrons ,donor ions67. In a PN junction in P-type semiconductor bar _ _ _ _ _ _ _ , _ _ _ _ _ _ _ exists :->Holes, acceptor ions68. In a PN-Junction junction region consists of :->Depletion region69. In a PNP transistor operating in the active region, in the base region, the main stream of current is : :->diffusion of holes70. In a PNPN diode, breakover condition is marked by a sudden _ _ _ _ _ _ _ in current. :->increased tk71. In a transistor , a reverse-biased collector base junction has _ _ _ _ _ _ _ _ _ Resistance path. :->high72. In a transistor , the forward-biased emitter-base junction has a _ _ _ _ _ _ _ _ Resistance path. :->low73. In a transistor , the main function of _ _ _ _ _ _ _ is to supply majority Charge carriers( either electrons or holes) to the base and hence It 8.is more heavily do ped. :->Emitter www.worldwebsites8.blogspot.com74. In a transistor the collector region width is _ _ _ _ _ _ _ than emitter region width. : ->larger75. In a transistor, currentflow in :->base and collector leads w76. In a transistor, the main function of _ _ _ _ _ _ _ is to collect majority Charge carriers through the base.This is moderately doped. :->Collector77. In active region o peratio n of a transistor : :- >Emitter junction is forward biased while collector junction is reverse biaseddiffusion current w78. In an NPN transistor oper ating in the active region the main current Crossing the co llector junction from base side is: :->Electron79. In an NPN transistor, the function of the emitter is: :->To inject electrons into the base rs80. In an unbiased PN junction , the junction current at equilibrium is: :->zero due to equal and oppositecurrents crossing the junction81. In C.R.T electron travels in fo llowing path :->Electron gunDefluxion coils Fluo rescent screen ou82. In C.R.T Function of electron gun is to :->Single electron beam with high velocity83. In C.R.T Horizontal deflection plates causes :->Horizontal defluxion on screen84. In C.R.T Vertical deflection plates causes :->Vertical defluxion on screen85. In case of a transistor which the following equation is correct :->86. In CRT, the arrangement of electrodes which produce a focused beam of electrons is called the _ _ _ __ _ :->Electron gun .y87. In cutoff region operation of a transistor Where JC means collector junction JE means emitter junction :->Both JE and JC are reversebiased88. In dual beam CRO no o f beams are :->2 w89. In dual beam CRO no of electron gun are :->290. In dual trace CRO no of beams are :->291. In dual trace CRO no of electron gun are :->1 www.worldwebsites8.blogspot.com w92. In electro static C.R.T in case of defluxion sensitivity which of the following are true :->Defluxion sensitivity independent of defluxionvoltage93. In electro static C.R.T in case of defluxion which of the following are false :->Defluxion Directly proportional to square defluxion wvoltage94. In electro static C.R.T in case of velocity of electron which of the following are true :->Velocity of electron is directly proportional tosquare root anode voltage95. In Electro static defluxion system defluxion will be in :->Parabolic path96. In Electro static defluxion system sweep voltage should be applied to the _ _ _ _ _ _ _ _ :->Horizontal plates.97. In Fluorescent screen _ _ _ _ _ _ _ element is generally used. :->Phosphor98. In Full Wave Rectifier , maximum possible rectifier efficiency is _ _ _ _ _ _ _ :->81.2 %99. In Ge diode , the cutin voltage is about: :->0.2 volt100. In Half Wave Rectifier , maximum possible rectifier efficiency is _ _ _ _ _ _ _ :->40.6 %101. In Half Wave Rectifier , Root mean square value() value is _ :->Im /2102. In magneto static C.R.T in case of defluxion sensitivity which of the following are true :->Defluxion sensitivity independent ofmagnetic field103. In magneto static C.R.T in case of defluxion which of the following are false :->Defluxion directly proportional to square root ofmagnetic field
  3. 3. 104. In Magneto static defluxion system defluxion will be in :->Circular path105. In Magneto static defluxion system defluxion will be in :->Perpendicular to the path of electron106. In Moving coil the current needed to deflect the pointer all the way to the way to the last mark of calibration scale is called of _ _ _ _ _ __ _ _ _ :->Full scale defluxion current107. In n-type semiconductor :->electrons form the majority carriers108. In pn junction depletion region formed by recombination of _ _ _ _ _ _ _ , _ _ _ _ _ _ : ->electrons , holes109. In p-type semiconducto r: :->free electrons from the minority carriers110. In saturation reg ion operation of a transistor Where JC means collector junction JE mea ns e mit ter junction :->Both JE and JC areforward biased111. In SCR the breakover vo ltagewith the increase of positive gate current :->increased112. In SCR, the turn - off time :->Increase with increase of T113. In Si diode , the cutin voltage is about: :->0.6 volt114. In the comparison of electro static and Magneto static defluxion system which of the following is true :->Electro static defluxionsystem used at high frequencies115. In the comparison of electro static and Magneto static defluxion system which of the following is true :->Electro static defluxion tksystem consumes low power116. In the comparison of electro static and Magneto static defluxion system consumes high power because :->Electro static defluxionsystem operates for lees time 8.117. In the moving coil type indicator, indicator is connected to a spring because :->The spring provides restoring torque118. In which of the following instruments amplification is used :->Electronic measurements instruments119. Intr insic semiconductor means :->Pure semiconductor without any impurities w120. Junctio n breakdown occurs :->under reverse bias www.worldwebsites8.blogspot.com121. LISSAJOUS figures pattern are used in _ _ _ _ _ _ _ _ _ measurement :->Phase difference measurement122. LISSAJOUS figures pattern generated when :->when two signal are applied to horizontal and vertical plates simultaneously124. Moving coil is used to detect _ _ _ _ _ _ _:->Magnetic Flux w123. Magneto static defluxion system used in _ _ _ _ _ _ applications :->Television CRT125. Moving Magnetic coil can be converted into an AC audio frequency ammeter by connecting _ __ _ _ _ _ _ :-> Rectifier rs126. Multimeter used to measure _ _ _ _ _ _ _ _ _ _ _ :->Current, Voltage and Resistance127. Ohmic contacts are used in a PN junction to :-> Connect terminal directly128. Ohm-meter is used to measure _ _ _ _ _ _ _ _ _ :->Resistance only ou129. One of application of P-N junction diode is _ _ _ _ _ _ _ :->Rectifier130. Peak Inverse Voltage of a Full Wave Rectifier is _ _ _ _ _ _ :->2 Vm131. Peak Inverse Voltage of a Half Wave Rectifier is _ _ _ _ _ _ _ _ :->Vm132. P-N junction diode acts as a _ _ _ _ _ _ in forward and reverse bias conditions. :->Switch133. P-N junction diode is also used in _ _ _ _ _ _ _ _ circuits :->clipping .y134. P-N junction diode is also used in _ _ _ _ _ _ circuits :->clamming135. Resolution of a Digital Instruments is _ _ _ _ _ _ _ _ _ :->Least voltage Change Value that can be measured136. SCR consists _ _ _ _ _ _ number of PN junctions. :->3 w137. SCR is a _ _ _ _ _ _ terminal semi-conductor switching device. :->3138. SCR is a four layer device with one _ _ _ _ _ _ _ _ :->Gate139. SCR is also called as _ _ _ _ _ _ :->Thyristor w140. SCR uses: :->one gate on the p-layer next to cathode141. Semiconductor materials have _ _ _ _ _ _ _ bonds. :->covalent142. Spot of beam defluxion by applying voltage on the vertical and horizontal defluxion plates is called :->Electro static defluxion w143. Sweep voltage generator also called _ _ _ _ _ _ _ _ _ _ :->Time base generato r144. The 3 terminals of BJT are _ _ _ _ _ _ _ _ _ :->Base, Emitter , Collector145. The 3 terminals of SCR are _ _ _ _ _ _ _ :->Base, Emitter, Gate146. The advantage of Bridge Rectifier is _ _ _ _ _ _ _ _ is not required. :->centre tapped transformer147. The anode of SCR is always maintained at _ _ _ _ _ _ _ potential With respect to cathode. :->positive148. The area within a semico ndu ctor d io de where no mobile current carriers Exist when it is for med is called _ _ _ _ _ _ _ _ region. :->depletion149. The bridge rectifier produces a voltage output nearly _ _ _ _ _ _ _ _ that of Centre-tap circuit for a given transformer. :->twice150. The emitter is _ _ _ _ _ _ _ _ doped. :->heavily151. The forward bias on PN junction :->both holes on the p-side and electrons on n-side cross the junction to the opposite sides.152. The function of a transistor is to do _ _ _ _ _ _ _ _ _ :->amplification153. The input impedance of a CRO is :->The impedance offered by the CRO to the signal154. The most widely used semiconducting material in electronic devices is :->silicon155. The most widely used transistor circuit arrangement is _ _ _ _ circuit. :->CE
  4. 4. 156. The No load Voltage in the case of Half Wave Rectifier is _ _ _ _ _ _ :->157. The normal way to close an SCR is by appropriate _ _ _ _ _ _ _ _ :->Gate current158. The Ratio of Rectificatio nin Full Wave Rectifier is _ _ :->0.812159. The Ratio of Rectification Pdc / Pac in Half Wave Rectifier is _ _ _ _ _ _ _ :->0.406160. The reverse bias on PN junction: :->pushes the electrons and holes always from the junction161. The Ripple Factor of Bridge Rectifier is _ _ _ _ _ _:->0.482162. The Ripple Factor of Full Wave Rectifier is _ _ _ _ :->0.482163. The Ripple Factor of Half Wave Rectifier is _ _ _ _ :->1.21164. The SCR is often employed as a _ _ _ _ _ _ _ controlled switch. :->Gate165. The term bias means :->a dc voltage applied across the P-N junction to control its operation.166. The Transformer Utilization Factor of Bridge Rectifier is :->0.812167. The Transformer Utilization Facto r of Full Wave Rectifier is :->0.693168. The Transformer Utilization Factor of Half Wave Rectifier is :->0.287169. The Value of a is always less than _ _ _ _ _ _ _ _ _ :->unity170. The width of depletion layer o f a P- N ju nction :->is increased under reverse bias. tk171. Time base sweep generator gives _ _ _ _ _ _ _ _ wave form. :->sawtooth wave172. To obtain a stable display of the signal on screen on CRT screen sweep signal applied must be :->Synchronous with the signal173. To open the SCR(i.e to make it non-conducting), we have to Reduce the supply voltage to _ _ __ _ _ _ _ :->0 8.174. Transducer is used to _ _ _ _ _ _ _ _ _ :->Convert Non-electric signal to electric signal175. Transformer is _ _ _ _ _ _ _ _ _ in a full wave rectifier. :->essential176. Units of defluxion is :->Centimeter www.worldwebsites8.blogspot.com w177. Units of Forbidden gap in semiconductors is :->ev178. Voltmeter is used to measure _ _ _ _ _ _ _:->Voltage only179. We use _ _ _ _ _ _ _ in Bias Stabilization circuits. :->P-N junction diode180. When a diode forward biased :->conducts current w181. When a layer of N type material is sandwiched between two layers of P- type mater ial, the transistor is known as _ _ transistor. :->PNP182. When a layer of P type mater ial is sandwiched between two layers of N- type mater ial, the transistor is known as _ _transistor. :->NPN rs183. When a P-N junction is formed, diffusion current causes :->Barrier potential184. When a P-N junction is forward biased :->the current is produced by both holes and electrons.185. When large Resistance is connected to a Moving coil in ser ies it acts as :->Voltmeter ou186. When small Resistance is connected to a Moving coil in shunt it acts as :->Ammeter187. When two signal are applied to horizontal and vertical plates simultaneously with phase difference theta = 00 then LISSAJOUS figurereduces to :->Straight line with 450 slope188. When two signal are applied to horizontal and vertical plates simultaneously with phase difference theta = 900 then LISSAJOUS figurereduces to :->CIRCLE .y189. When two signal are applied to horizontal and vertical plates simultaneously with phase difference theta = 1800 then LISSAJOUS figurereduces to :->Straight line with -1 slope190. Which of the following are components of Electronic measurement instruments :->Transducer, Signal amplifier, Indicating meter w191. Which of the following are properties of Digital Instruments :->Greater resolution, Better Accuracy, Easy readability.192. Which of the following are properties of Electronic measurements instruments? :-> Higher sensitivity , Faster Response ,greaterflexibility w193. Which of the following is a component of CRO? :-> Sweep generato r194. Which of the following is not a component of C.R.T :-> Sweep generator195. Which of the following is not component of CRO? :-> Electron gun w196. Which of the following wave is applied to CRO as sweep generator? :->Saw tooth wave197.= a / _ _ _ _ _ :->1- aSite Address:www.worldwebsites8.blogspot.comURL : www.yoursww8.tk Author: N.Rajeev.

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