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I-V characteristics of highly doped p-i-n diode

I-V characteristics of highly doped p-i-n diode

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I-V characteristics of
highly-doped p-i-n diode
The 14th International Conference on QiR (Quality in Research), 2015
A.A.N.G. Sapteka1, a, H.N. Tan2, R. Unno2, D. Moraru2,
A. Udhiarto1, S. Purwiyanti1, D. Hartanto1, H. Sudibyo1,
M. Tabe2
1Electrical Engineering, Universitas Indonesia, Depok, Indonesia.
2Reseach Institute of Electronics, Shizuoka University, Hamamatsu, Japan.
aanak.agung15@ui.ac.id
Outline
• Introduction
• Methods
• Result and Discussion
• Conclusion
• Acknowledgment
The 14th International Conference on QiR (Quality in Research), 2015
Outline
• Introduction
• Methods
• Result and Discussion
• Conclusion
• Acknowledgment
The 14th International Conference on QiR (Quality in Research), 2015
Introduction
The 14th International Conference on QiR (Quality in Research), 2015
• Design, Fabrication and Characterization of p-i-
pn diode within ultrathin SOI structure.
• Doping concentration for Boron and Phosphorus
are 1×1020 cm-3 and 2×1020 cm-3, respectively,
achieved by short-time (5 minutes) drive-in
process in N2 atmosphere at 950 oC.
Methods
The 14th International Conference on QiR (Quality in Research), 2015
Fig. 1. P-I-N diode using SOI structure
Methods
The 14th International Conference on QiR (Quality in Research), 2015

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I-V characteristics of highly doped p-i-n diode

  • 1. I-V characteristics of highly-doped p-i-n diode The 14th International Conference on QiR (Quality in Research), 2015 A.A.N.G. Sapteka1, a, H.N. Tan2, R. Unno2, D. Moraru2, A. Udhiarto1, S. Purwiyanti1, D. Hartanto1, H. Sudibyo1, M. Tabe2 1Electrical Engineering, Universitas Indonesia, Depok, Indonesia. 2Reseach Institute of Electronics, Shizuoka University, Hamamatsu, Japan. aanak.agung15@ui.ac.id
  • 2. Outline • Introduction • Methods • Result and Discussion • Conclusion • Acknowledgment The 14th International Conference on QiR (Quality in Research), 2015
  • 3. Outline • Introduction • Methods • Result and Discussion • Conclusion • Acknowledgment The 14th International Conference on QiR (Quality in Research), 2015
  • 4. Introduction The 14th International Conference on QiR (Quality in Research), 2015 • Design, Fabrication and Characterization of p-i- pn diode within ultrathin SOI structure. • Doping concentration for Boron and Phosphorus are 1×1020 cm-3 and 2×1020 cm-3, respectively, achieved by short-time (5 minutes) drive-in process in N2 atmosphere at 950 oC.
  • 5. Methods The 14th International Conference on QiR (Quality in Research), 2015 Fig. 1. P-I-N diode using SOI structure
  • 6. Methods The 14th International Conference on QiR (Quality in Research), 2015
  • 7. Methods The 14th International Conference on QiR (Quality in Research), 2015 Fig. 3. I-V device measurement using a high-vacuum variable temperature prober station.
  • 8. Outline • Introduction • Methods • Result and Discussion • Conclusion • Acknowledgment The 14th International Conference on QiR (Quality in Research), 2015
  • 9. Result and Discussion Table 1. Result of Phosphorus Doping Concentration Doping Temperature [oC] 880 900 950 Concentration [cm-3] 7×1019 8×1019 1×1020 The 14th International Conference on QiR (Quality in Research), 2015
  • 10. Result and Discussion Table 2. Result of Boron Doping Concentration Doping Temperature [oC] 880 900 950 Concentration [cm-3] 5×1019 8×1019 2×1020 The 14th International Conference on QiR (Quality in Research), 2015
  • 11. Result and Discussion Fig. 4. Fabrication steps of highly-doped nanoscale p-i-n diodes. (1) L=200 nm and W=680 nm (2) L=200 nm and W=850 nm (3) L=700 nm and W=660 nm (4) L=700 nm and W=680 nm (5) L=700 nm and W=720 nm P-I-N diodes: The 14th International Conference on QiR (Quality in Research), 2015
  • 12. Result and Discussion According to Sze (2007), effective carrier lifetime before recombination in semiconductors, 𝜏eff = (2 Arn2 + (1/(tp0 + tn0)))-1 (1) where: Ar (Auger coefficient) = 1~2 × 10-31 cm6/s n ≈ ND tp0 = hole lifetime at 300 K tn0 = electron lifetime at 300 K The 14th International Conference on QiR (Quality in Research), 2015
  • 13. Result and Discussion As suggested by Zheng et.al. (2008), it is reasonable to assume tn0=tp0=100 μs. Thus, for Eq. (1), we have 𝜏eff≈ 3.33 × 10-10 s. The current density can be then expressed as: J = (qnL)/(𝜏 eff) (2) Using equation (2), for diodes with i layer of L=200 nm, we obtain a current density of J ≈ 9.60×105 A/cm2, while for diodes with i layer of L=700 nm, we obtain current density J ≈ 3.36×106 A/cm2 . The 14th International Conference on QiR (Quality in Research), 2015
  • 14. Result and Discussion The 14th International Conference on QiR (Quality in Research), 2015
  • 15. Outline • Introduction • Methods • Result and Discussion • Conclusion • Acknowledgment The 14th International Conference on QiR (Quality in Research), 2015
  • 16. Conclusion • High-concentration doping (≈1020 cm-3) of nanoscale p-i-n diodes has been achieved and fabricated using such processes in this work as a preliminary stage. • From I-V characteristics of p-i-n diodes at room temperature, we suggest that longer i- layer will produce higher current in forward bias. The 14th International Conference on QiR (Quality in Research), 2015
  • 17. Outline • Introduction • Methods • Result and Discussion • Conclusion • Acknowledgment The 14th International Conference on QiR (Quality in Research), 2015
  • 18. Acknowledgment We would like to thank to PKPI / Sandwich-like Programme 2014 of The Directorate General of Higher Education, Ministry of Education and Culture, Republic of Indonesia. The 14th International Conference on QiR (Quality in Research), 2015
  • 19. Thank You The 14th International Conference on QiR (Quality in Research), 2015