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Gate driver design and inductance fabrication

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Gate driver design and iductance fabrication

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Gate driver design and inductance fabrication

  1. 1. Gate Drive Circuit MOSFET/IGBT Malaiyappan M Pantech Solutions
  2. 2. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. MOSFET • Metal Oxide Semiconductor Field Effect Transistor – It is the key component in high frequency, high efficiency switching applications across the electronics industry. – It must be driven from a low impedance source capable of sourcing and sinking sufficient current to provide for fast insertion and extraction of the controlling charge
  3. 3. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Structure of MOSFET Technology Using polycrystalline silicon gate structures and self-aligning processes, higher density integration and rapid reduction in capacitances became possible V-groove or trench technology to further increase cell density in power MOSFET devices. The better performance and denser integration do not come free; however, as trench MOS devices are more difficult to manufacture. power MOSFETs have significantly lower capacitances, therefore, they can switch much faster and they require much less gate drive power
  4. 4. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. MOSFET Models Epi layer has to withstand most of the MOSFET's OFF-state drain-to-source voltage. Inbuilt dV/dT Function The switching performance of the MOSFET transistor is determined by how quickly the voltages can be changed across these capacitors.
  5. 5. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. TURN – ON Mechanism
  6. 6. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. MOSFET GATE DRIVE TURN - ON VGS VTH VDS ID IG Turn On Delay “Miller Effect” Turn On Rise Time
  7. 7. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. TURN- OFF Mechanism
  8. 8. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. MOSFET GATE DRIVE TURN - OFF VGS VTH VDS ID IG Turn Off Delay “miller effect” Turn Off Rise Time
  9. 9. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. GATE Driver Properties 1. Isolator 2. Amplifier 3. Protection 4. Speed up Mechanism( Turn ON/OFF)
  10. 10. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Isolation 1. Opto-coupler 2. Galvanic Isolation S.N o Switching Frequency Device 1 25KHz MCT2E 2 25KHz TLP250 3 100KHz HCPL7840 4 250KHz FD3180 5 2MHz 6N135 6 250KHz SID11x2K
  11. 11. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Amplifier Property 1. Totem Pole Driver 2. Most Popular 3. Cost Effective 4. High Reverse Break Down Voltage Protection
  12. 12. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Protection Zener Protection By Pass Capacitor Protection
  13. 13. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. dV/dT Protection 1. Pull Down Resistor … Wtts Ton-min= 2.5uS 5RC=2.5uS R can be calculated 2. Snubber Protection
  14. 14. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Turn – Off Speed Enhancement RGATE allows adjustment of the MOSFET turn-on speed. Schottky anti parallel diode
  15. 15. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. MOSFET Driver
  16. 16. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. PCB Consideration Suggestions 1. Signal and Ground Line Must be short 2. If More Noise at Driver output, RC Filter network is required with Proper Frequency Calculations 3. Proper Isolation have to be placed
  17. 17. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. High Freq. Isolated Driver
  18. 18. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd.
  19. 19. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Inductor Design • Air Core Inductor • Iron Core Inductor • Ferrite Core Inductor • Iron Powder Inductor • Toroidal Inductor • Multi-layer Ceramic Inductors • Film Inductor • Variable Inductor • Coupled Inductors
  20. 20. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Major Applications • Filters • Transformers • Sensors • Motors • Energy Storages
  21. 21. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Core Types • Iron-core inductors – Large inductance values but have large power losses at high frequencies • For high-frequency applications – Ferrite-core inductors are used
  22. 22. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Core Types E Core EQ Core ER Core ETD Core PM Core PQ Core E 30 to 100 EQ 25 to 30 ER 25 to 54 ETD 29 to 59 PM 50 to 114 PQ 32 to 50
  23. 23. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Start Collect L, F, Ipeak and Temp Calculate Energy Dissipation Choose Core Type and Size Choose Wire size from Peak current Calculate Airgap and wind the Inductor Adjust the Airgap and Correct the Inductance Value
  24. 24. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Inductor Design Specification 1. Inductance Value L 2. Switching Frequency 3. Peak Current
  25. 25. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Sample Data 1 L: 1mH, Switching Frequency: 100KHz, Peak Current: 15A Energy Calculation : ½ LI2 : ½ *1*15*15 mJ : 112.5mJ
  26. 26. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. No of Turns (N) = ( L x Ipeak x 104 ) / Ac x Bm Nos = 1x10-3 x 15x104 / (0.3*5.32) = 94T Note: 94 Turns if not Possible to wind make 2 Cores in single bobbin, N: 47 Selection of Wire = Ipeak/J = 15/3 = 5 Sq mm; 12 SWG Airgap = uoNIp / Bm = 2.95 mm; 1.5 mm per side
  27. 27. Technology beyond the Dreams™ Copyright © 2006 Pantech Solutions Pvt Ltd. Sample Data 2 S.No Parameters Buck Boost Buck Boost 1 Input Voltage 0-30 0-30 0-30 2 Output Voltage 0-25 45 0-45 3 Output Current 2A 2A 2A 4 Efficiency 90% 90% 90% 5 Inductance 100uH 23uH 6 Sw. Freq 100KHz 100KHz 100KHz 7 Current 2A 2A 8 Peak Current 5A 5A 9 Core Type EE42 EE42 EE42 EE42 10 AWG 24 24 24

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