A Comparative Study on Carbon
Nanotube MOSFET, Silicon Nanowire
MOSFET and Single Gate MOSFET
To simulate different characteristics of single gate MOSFET,
silicon nanowire MOSFET and carbon nanotube
MOSFET using the ...
Earlier approach
Analog switch with 4
terminal MOSFET
structure [1]
N-type and p-type
Gate voltage controls the
switching
...
Quantum wire structure
Wire diameter= 10^-9 nm
Mobility of electrons is
controlled by the
electrostatic potential
applied ...
Advanced technology
Graphene role as
nanotube
Single or an array of tubes
as the channel in FET
Band gap is directly
affec...
Single gate MOSFET-
 gate oxide thickness= 1.5 nm
 gate insulator dielectric constant=3.9
 effective mass ratio=.19
 v...
Carbon nanotube MOSFET-
 nanotube diameter=1 nm
 gate insulator thickness=1.5 nm
 gate insulator dielectric constant=3.9
gate control constant β= .88
drain control constant α= .035
Temperature= 300K
Gate voltage= 0 t0 2 volts
Drain voltage= 0 ...
Carbon nanotube
MOSFET(lowest, saturates
at 1 µA)
single gate MOSFET silicon nanoribon MOSFET
Carbon nanotube MOSFET single gate MOSFET
(minimum slope)
silicon nanoribon MOSFET
(maximum slope)
Carbon nanotube MOSFET
(lower mobile charge
density
single gate MOSFET silicon nanoribon MOSFET
Carbon nanotube
MOSFET(lowest quantum
capacitance)
single gate MOSFET silicon nanoribon MOSFET
characteristics Carbon nanotube
MOSFET
Silicon nanowire
MOSFET
Single gate MOSFET
ID VS VG low high high
IDVS VD Moderate ...
Carbon nanotube MOSFET has moderate slope as found from
ID VS VD characteristics. So, it can be used for amplification
pur...
[1] Uhua Cheng, Chenming Hu (1999). "§2.1 MOSFET c
lassification and operation".MOSFET modeling & BSIM3
user's guide. Spri...
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A Comparative Study on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET

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A Comparative Study on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET

  1. 1. A Comparative Study on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET
  2. 2. To simulate different characteristics of single gate MOSFET, silicon nanowire MOSFET and carbon nanotube MOSFET using the simulation tool FETToy in nanohub. To compare between the three technologies in terms of-  Drain current VS gate voltage relation.  Drain current VS drain voltage relation.  Mobile charge VS gate voltage relation.  Quantum capacitance VS gate voltage relation.
  3. 3. Earlier approach Analog switch with 4 terminal MOSFET structure [1] N-type and p-type Gate voltage controls the switching Electrons have mobility 3 times the holes Fig: single gate MOSFET [2]
  4. 4. Quantum wire structure Wire diameter= 10^-9 nm Mobility of electrons is controlled by the electrostatic potential applied at gate contact. ‘Field effect’ operation [3] Ballastic movement of electrons Fig: silicon nanowire MOSFET [2]
  5. 5. Advanced technology Graphene role as nanotube Single or an array of tubes as the channel in FET Band gap is directly affected by chirality and diameter. [4] Low power device, faster switching Fig: carbon nanotube MOSFET
  6. 6. Single gate MOSFET-  gate oxide thickness= 1.5 nm  gate insulator dielectric constant=3.9  effective mass ratio=.19  valley degeneracy=2  body thickness=10nm.  Silicon nanowire MOSFET-  gate insulator dielectric constant=3.9  transport effective mass ratio=.19  valley degeneracy=2 and nanowire diameter=1 nm
  7. 7. Carbon nanotube MOSFET-  nanotube diameter=1 nm  gate insulator thickness=1.5 nm  gate insulator dielectric constant=3.9
  8. 8. gate control constant β= .88 drain control constant α= .035 Temperature= 300K Gate voltage= 0 t0 2 volts Drain voltage= 0 to 2 volts Bias points= 12
  9. 9. Carbon nanotube MOSFET(lowest, saturates at 1 µA) single gate MOSFET silicon nanoribon MOSFET
  10. 10. Carbon nanotube MOSFET single gate MOSFET (minimum slope) silicon nanoribon MOSFET (maximum slope)
  11. 11. Carbon nanotube MOSFET (lower mobile charge density single gate MOSFET silicon nanoribon MOSFET
  12. 12. Carbon nanotube MOSFET(lowest quantum capacitance) single gate MOSFET silicon nanoribon MOSFET
  13. 13. characteristics Carbon nanotube MOSFET Silicon nanowire MOSFET Single gate MOSFET ID VS VG low high high IDVS VD Moderate slope Minimum slope Maximum slope Mobile charge density VSVG low high high Quantum capacitane VS VG minimum high high
  14. 14. Carbon nanotube MOSFET has moderate slope as found from ID VS VD characteristics. So, it can be used for amplification purpose as well where as other two devices are limited to mostly switching purposes. Cnt MOSFET has low quantum capacitance. So drain voltage has less effect on the performance of the IC that leads to drain control constant value, α=.035 which is very close to the ideal case (for ideal case, α=0. So, based on the simulated results we can come to the conclusion that carbon nanotube MOSFET is better for nanoelectronic design among the three types of devices considered here .
  15. 15. [1] Uhua Cheng, Chenming Hu (1999). "§2.1 MOSFET c lassification and operation".MOSFET modeling & BSIM3 user's guide. Springer. p. 13. ISBN 0-7923-8575-6. [2] www.nanohub.org/simulation/FETToy [3] Holmes, Justin D.; Johnston, Keith P.; Doty, R. Christopher and Korgel, Brian A.,” Control of thickness and orientation of solution-grown silicon nanowires.” Science (2000), 287(5457), 1471-1473 [4] Dekker, Cees; Tans, Sander J.; Verschueren, Alwin R. M. ( 1998). "Room-temperature transistor based on a single carbon nanotube", Nature 393 (6680):49.Bibcode:1998Natur.393...49 T. doi:10.1038/29954

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