Ete411 Lec9


Published on

Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh

Published in: Sports
  • Be the first to comment

  • Be the first to like this

Ete411 Lec9

  1. 1. ETE411 :: Lecture 9 Chapter 5 Dr. Mashiur Rahman
  2. 2. Summery <ul><li>The process by which these charged particles move is called transport. Two basic transport mechanisms in a semiconductor crystal: </li></ul><ul><ul><li>Drift: the movement of charge due to electric fields, and </li></ul></ul><ul><ul><li>Diffusion: the flow of charge due to density gradients. </li></ul></ul><ul><ul><li>Temperature gradients: in a semiconductor can also lead to currier movement. However, as the semiconductor device size becomes smaller, this effect can usually be ignored. </li></ul></ul><ul><li>The carrier transport phenomena are the foundation for finally determining the current-voltage characteristics of semiconductor devices. </li></ul>
  3. 3. CARRIER DRIFT <ul><li>An electric field applied to a semiconductor will produce a force on electrons and holes so that they will experience a net acceleration and net movement, provided there are available energy states in the conduction and valence hands. </li></ul><ul><li>This net movement of charge due to an electric field is called drift . The net drift of charge gives rise to a drift current . </li></ul>
  4. 4. Drift Current Density <ul><li>Since both electrons and holes contribute to the drift current, the total drift current density is the sum of the individual electron and hole drift current densities, so we may write </li></ul>
  5. 5. EXAMPLE 5.1 (p. 156) Do it yourself E5.1, E5.2
  6. 6. Conductivity
  8. 12. Diffusion Current Density
  9. 13. EXAMPLE 5.4 Do it yourself: E5.8, E5.9, E5.10
  10. 14. Total Current Density
  11. 16. Summery