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Public Information
GaN Transistors Are Here
Faster, Smaller, and More Efficient...
Public Information2 5/28/2015
Semiconductor Silicon Silicon
Carbide
Galliu
m
Nitride
Characteristic Unit
Bandgap eV 1.1 3....
Public Information3 5/28/2015
• HEMT = High Electron Mobility Transistor
• Conducts through two-dimensional electron gas
•...
Public Information4 5/28/2015
• Ease of drive
– Traditional gate drive voltages can be used
– Characteristics set by low v...
Public Information5 5/28/2015
E
Part Rdson (mΩ) Qg @4.5 V
(nC)
Co(er) @0 to
480 V (pF)
Qrr (µC)
NTP8G202N 290 6.2 36 0.029...
Public Information6 5/28/2015
Parameters
On
resistance
(W)
Gate charge
(nC)
Output
charge (nC)
Energy
related Coss
(pF)
Re...
Public Information7 5/28/2015
• Efficient power conversion favors soft switching
circuit topologies that recover energy.
–...
Public Information8 5/28/2015
• Drive and power loop inductances - Minimize
component spacing
• Surge protection devices m...
Public Information9 5/28/2015
• Traditional CCM Boost Circuit vs Totem Pole Circuit
• GaN transistors enable more efficien...
Public Information10 5/28/2015
• Benefits from GaN at higher frequency
– Increased power density
– Reduced system size and...
Public Information11 5/28/2015
• GaN Transistors – ON Semiconductor and Transphorm
collaborating to enable adoption in pow...
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GaN Transistors Are Here - Faster, Smaller, and More Efficient

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Advantages of GaN transistors: superior breakdown capability, higher electron density and speed and higher operating temperature

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  • DOWNLOAD FULL BOOKS, INTO AVAILABLE FORMAT ......................................................................................................................... ......................................................................................................................... 1.DOWNLOAD FULL. PDF EBOOK here { https://tinyurl.com/y6a5rkg5 } ......................................................................................................................... 1.DOWNLOAD FULL. EPUB Ebook here { https://tinyurl.com/y6a5rkg5 } ......................................................................................................................... 1.DOWNLOAD FULL. doc Ebook here { https://tinyurl.com/y6a5rkg5 } ......................................................................................................................... 1.DOWNLOAD FULL. PDF EBOOK here { https://tinyurl.com/y6a5rkg5 } ......................................................................................................................... 1.DOWNLOAD FULL. EPUB Ebook here { https://tinyurl.com/y6a5rkg5 } ......................................................................................................................... 1.DOWNLOAD FULL. doc Ebook here { https://tinyurl.com/y6a5rkg5 } ......................................................................................................................... ......................................................................................................................... ......................................................................................................................... .............. Browse by Genre Available eBooks ......................................................................................................................... Art, Biography, Business, Chick Lit, Children's, Christian, Classics, Comics, Contemporary, Cookbooks, Crime, Ebooks, Fantasy, Fiction, Graphic Novels, Historical Fiction, History, Horror, Humor And Comedy, Manga, Memoir, Music, Mystery, Non Fiction, Paranormal, Philosophy, Poetry, Psychology, Religion, Romance, Science, Science Fiction, Self Help, Suspense, Spirituality, Sports, Thriller, Travel, Young Adult,
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GaN Transistors Are Here - Faster, Smaller, and More Efficient

  1. 1. Public Information GaN Transistors Are Here Faster, Smaller, and More Efficient...
  2. 2. Public Information2 5/28/2015 Semiconductor Silicon Silicon Carbide Galliu m Nitride Characteristic Unit Bandgap eV 1.1 3.26 3.49 Electron Mobility cm²/Vs 1500 700 2000 Peak Electron Velocity x10⁷ cm/s 1.0 2.0 2.1 Critical Electric Field MV/cm 0.3 3.0 3.0 Thermal Conductivity W/cm·K 1.5 4.5 >1.5 Relative Dielectric Constant ετ 11.8 10.0 9.0 Why GaN? Excellent Characteristics for a Power Device • Superior breakdown capability • Higher electron density and speed • Higher operating temperature
  3. 3. Public Information3 5/28/2015 • HEMT = High Electron Mobility Transistor • Conducts through two-dimensional electron gas • Lateral current conduction The GaN HEMT What is it?
  4. 4. Public Information4 5/28/2015 • Ease of drive – Traditional gate drive voltages can be used – Characteristics set by low voltage transistor • Gate voltage rating • Threshold voltage • Gate charge (~10x better than super-junction) • Reliability – Passed JEDEC industrial specifications – Passed long-term application-level testing 600 V GaN Cascode Advantages
  5. 5. Public Information5 5/28/2015 E Part Rdson (mΩ) Qg @4.5 V (nC) Co(er) @0 to 480 V (pF) Qrr (µC) NTP8G202N 290 6.2 36 0.029 NTP8G206N 150 6.2 56 0.054 First 600 V GaN Products • Products qualified and released! • Products at other specifications and in other packages are in development. Product Specifications
  6. 6. Public Information6 5/28/2015 Parameters On resistance (W) Gate charge (nC) Output charge (nC) Energy related Coss (pF) Reverse recovery charge (mC) FOM1A FOM1B FOM2 Symbol Rds, on Qg Qoss Coer Qrr Ron*Qg Ron*Qoss Ron*Qrr GaN Gen1 0.180 6.2 53 56 0.054 1.1 9.5 0.01 SJ Si GenA 0.199 32 86 69 5.5 6.4 17 1.1 SJ Si GenB 0.190 63 128 56 6.9 11 24 1.3 SJ Si GenC 0.199 20 126 29 6 4.0 25 1.2 Low Qrr SJ 0.190 95 77 83 1 18 15 0.19 1st Gen 600V GaN-on-Si HEMT Compared to HV MOSFET 4x Better Better Similar >20x Better For similar on-resistance, GaN’s performance is: • 1st generation GaN is already superior to silicon • GaN still has ample potential to improve
  7. 7. Public Information7 5/28/2015 • Efficient power conversion favors soft switching circuit topologies that recover energy. – Phase-Shifted Full-Bridge – Half-Bridge or FB LLC – Synchronous Boost – Others • GaN offers perfectly suited performance to accelerate this trend. GaN Applications Ideal Fit for Efficient Circuit Topologies
  8. 8. Public Information8 5/28/2015 • Drive and power loop inductances - Minimize component spacing • Surge protection devices must be used • Ensure thermal performance by appropriate heat sinking • Parallelization can be done by matching gate drive and power loop impedances • Separate grounds for power and signal components, connected at a single point System Development for GaN Critical Factors
  9. 9. Public Information9 5/28/2015 • Traditional CCM Boost Circuit vs Totem Pole Circuit • GaN transistors enable more efficient topology Power Factor Correction 230 Vac Input 110 Vac Input Efficiency Impovement by Topology Change
  10. 10. Public Information10 5/28/2015 • Benefits from GaN at higher frequency – Increased power density – Reduced system size and weight • System cost parity with better performance • Component cost will reduce with volume to become lowest cost wide band gap technology Advantages of GaN
  11. 11. Public Information11 5/28/2015 • GaN Transistors – ON Semiconductor and Transphorm collaborating to enable adoption in power systems • Packaging – Advanced packaging technology to combine with characteristics of more ideal switches • Drivers – High voltage drivers now, more coming for GaN • Controllers – Applying strong market presence to GaN • Reference Designs – Applying system expertise to GaN solutions for customers, not just products Expertise in GaN Power Electronics... Poised to provide customers a TOTAL GaN solution.

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