IMAPS - 2009 Mohammad Chowdhury

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¬¬Mechanically Punched Micro Via Fabrication Process in LCP Substrate for RF-MEMS and Related Electronic Packaging Applications

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  • 05/27/10 MicroEP Industrial Advisory Committee Annual Meeting
  • IMAPS - 2009 Mohammad Chowdhury

    1. 1. Understanding Micro Via Fabrication by Mechanical Punching in Liquid Crystal Polymer (LCP) Substrate for RF-MEMS and Related Electronic Packaging Applications Mohammad K. Chowdhury, 1 Li Sun, 2 Shawn Cunningham, 2 and Ajay P. Malshe 1* 1 University of Arkansas, Fayetteville, AR 72701 2 WiSpry Inc., Irvine, CA 92618 * Contact E-mail: [email_address] IMAPS 2009 November 3 rd , 2009
    2. 2. Outline: <ul><li>Motivations and Applications </li></ul><ul><li>Different Substrate Materials and Fabrication Techniques </li></ul><ul><li> μ -via fabrication by M echanical punching </li></ul><ul><li>Results and Discussion </li></ul><ul><ul><li>Conclusion and Future works </li></ul></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    3. 3. <ul><li>Need for a cost effective way of micro through via fabrication technique </li></ul><ul><li>Need for high speed processing technique for through via fabrication with high yield throughput </li></ul><ul><li>Need for through via fabrication technique compatible with the conventional via fabrication tool </li></ul><ul><li>Need for elimination of thermo processing of the substrate during through via fabrication </li></ul><ul><li>Need for fabrication of vias with uniform through via wall </li></ul>Motivations: Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    4. 4. Driver Applications: Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center www.morgantechnicalceramics.com www.smalltimes.com www.ec.europa.eu – ANASTASIA Project Transreceiver Base Station for Cell Phone
    5. 5. Outline: <ul><li>Motivations and Applications </li></ul><ul><li>Different Substrate Materials and Fabrication Techniques </li></ul><ul><li> μ -via fabrication by M echanical punching </li></ul><ul><li>Results and Discussion </li></ul><ul><ul><li>Conclusion and Future works </li></ul></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    6. 6. Different Material Candidates for the Substrate: Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center LCP - ULTRALAM 3850 [1] LTCC - DuPont 951 Green Tape [2] Kapton - Dupont HN100 [3] Peel Strength ( lbs/in) 8.52 12 7.2 Tensile strength ( MPa) 200 320 231 Tensile Modulus(GPa) 2.255 120 2.0 Density ( g/cm 3 ) 1.4 3.1 1.42 CTE ( ppm/°C) 17 (X & Y axis) 150 (Z-axis) 5.8 20 Melting Temp. (°C) 335 738 360 Thermal Conductivity ( W/m/°K) 0.2 3.3 1.09 Dielectric Constant @ 10 GHz, 23°C 2.9 7.1 3.5 Dissipation Factor/Loss Tangent @ 10 GHz, 23°C 0.0025 0.005 0.002 Volume Resistivity ( Mohm) 1x10 12 1x10 14 1x10 17 Dielectric Breakdown Strength (V/mil) 3500 1000 5200 Chemical Resistance 98.7% - 95% Water Absorption (23°C, 24 hrs) 0.04% - 2.8%
    7. 7. Different Techniques for µ-Via Fabrication : Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center Via Diameter, Substrate Material Via Pitch Via Shape in Z-axis Aspect Ratio Damage to Substrate Speed Cost/Via Mechanical Punching 30µm, Mylar [8] - Uniform Low - 3:1 [8] Relatively Smooth Surface of the Via Wall High Very Low [11] Mechanical Drilling 100µm, PCB [6] 50µm [6] Almost Uniform Low Very Rough Surface of the Via Wall Slow Low [11] Laser Drilling (CO 2 , YAG, YVO 4 Excimer) 25 to 75 µm, Polyimide - CO 2 , [4] 10 to 15 µm, Ceramics, PVA, Polystyrene, & Pyrex Glass - YAG –[5] 25µm, LCP - YVO 4 , [7] - Very Uniform [8, 12] Very High -20:1 [13] Carbon Residue Leftover [12] Smooth Surface of the Via Wall [13] Slow Low [4] Plasma Etching 50 µm, Kepton [10] - Very Uniform High Very Smooth Surface of the Via Wall Very Slow Expensive E-beam Machining 65 µm, Green Tape [9] 200 µm [9] Very Uniform [9] High [9] Very Smooth Surface of the Via Wall [9] Very Slow Extremely Expensive
    8. 8. Outline: <ul><li>Motivations and Applications </li></ul><ul><li>Different Substrate Materials and Fabrication Techniques </li></ul><ul><li> μ -via fabrication by M echanical punching </li></ul><ul><li>Results and Discussion </li></ul><ul><ul><li>Conclusion and Future works </li></ul></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    9. 9. Via Fabrication – Test Structure: <ul><li>Current Industry ( wi Spry) Requirements: </li></ul><ul><ul><li>No. of MEMS Switches: 80 </li></ul></ul><ul><ul><li>No. of I/O’s: 56 </li></ul></ul><ul><ul><li>Via Diameter: 90 μ m </li></ul></ul><ul><ul><li>Via Pitch: </li></ul></ul><ul><li>300 μ m (X-axis) </li></ul><ul><li>330 μ m (Y-axis) </li></ul>Targeted for Experiments : Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center Via Size Via Pitch ( μ m ) 50 μ m 75 100 125 150 75 μ m 112.5 137.5 162.5 187.5 100 μ m 150 175 200 225
    10. 10. How The Punching System Works? Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center Die Bushing LCP Copper Copper Pin LCP Copper Copper Before Punching Copper Copper LCP After Punching Copper Copper LCP APS 8718 Automatic Punching System Pacific Trinetics Corporation 6” x 6” Sample Holder Punch Pin Holder & Die Bushing
    11. 11. Outline: <ul><li>Motivations and Applications </li></ul><ul><li>Different Substrate Materials and Fabrication Techniques </li></ul><ul><li> μ -via fabrication by M echanical punching </li></ul><ul><li>Results and Discussion </li></ul><ul><ul><li>Conclusion and Future work </li></ul></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    12. 12. Mechanical Punching of μ -Via 50 µm Via, 75 µm Pitch, 10 x 10 Array 50 µm LCP Burr <ul><li>Consistency of the Via Array </li></ul><ul><li>Uniformity of Via Size and Shape </li></ul>Top Cu Film Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center 20 μ m 20 μ m
    13. 13. Punching Directions: Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    14. 14. Challenges in Mechanical Punching 50 µm Via, 75 µm Pitch, 10 x 10 Array Expansion Warpage <ul><li>Z-axis Expansion of the LCP Film </li></ul><ul><li>Warpage of the LCP sample </li></ul><ul><li>LCP Burr </li></ul><ul><li>Copper Burr </li></ul>LCP Burr Copper Burr Bottom Cu Film Bottom Cu Film Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    15. 15. Mechanism of LCP film Z-axis Expansion : Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center a) Via Pitch Via Diameter b) Via Diameter Via Pitch d) c)
    16. 16. Pitch Dependency of the Z-axis Expansion of LCP <ul><li>Z-axis expansion of the LCP film increases with lower pitch </li></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center Via Size Via Pitch ( μ m ) 50 μ m 75 100 125 150 75 μ m 112.5 137.5 162.5 187.5 100 μ m 150 175 200 225
    17. 17. Areal Density Dependency of the Z-axis Expansion of LCP <ul><li>Z-axis expansion of the LCP film increase with higher via array </li></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center Via Size Via Pitch ( μ m ) 50 μ m 75 100 125 150 75 μ m 112.5 137.5 162.5 187.5 100 μ m 150 175 200 225
    18. 18. Pitch Dependency of the Radius of Curvature <ul><li>Radius of curvature of the LCP film decrease with lower pitch, </li></ul><ul><li>i.e., high warpage with lower pitch </li></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center Via Size Via Pitch ( μ m ) 50 μ m 75 100 125 150 75 μ m 112.5 137.5 162.5 187.5 100 μ m 150 175 200 225
    19. 19. Areal Density Dependency of the Radius of Curvature <ul><li>Radius of curvature of the LCP film decreases with smaller </li></ul><ul><li>via array, i.e., high warpage with smaller via array </li></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    20. 20. Does μ - Mechanical Punching Has Any Prospect? <ul><li>Current Industry ( wi Spry) Requirements: </li></ul><ul><ul><li>No. of MEMS Switches: 80 </li></ul></ul><ul><ul><li>No. of I/O’s: 56 </li></ul></ul><ul><ul><li>Via Diameter: 90 μ m </li></ul></ul><ul><ul><li>Via Pitch: </li></ul></ul><ul><li>300 μ m (X-axis) </li></ul><ul><li>330 μ m (Y-axis) </li></ul>Targeted for Experiments : Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center Via Size Via Pitch ( μ m ) 50 μ m 75 100 125 150 75 μ m 112.5 137.5 162.5 187.5 100 μ m 150 175 200 225
    21. 21. Outline: <ul><li>Motivations and Applications </li></ul><ul><li>Different Substrate Materials and Fabrication Techniques </li></ul><ul><li> μ -via fabrication by M echanical punching </li></ul><ul><li>Results and Discussion </li></ul><ul><ul><li>Conclusion and Future works </li></ul></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    22. 22. Conclusion: <ul><li>μ -vias with 50 µm diameter and 75 µm pitch has been demonstrated </li></ul><ul><li>Mechanical punching for μ -via fabrication results Z- axis expansion of the LCP film and substrate warpage </li></ul><ul><li>Lower pitch will results higher Z-axis expansion of the LCP film, which reduced along with higher pitch </li></ul><ul><li>Higher areal density will results more Z-axis expansion of the LCP film </li></ul><ul><li>Smaller pitch will have higher substrate warpage , which reduced with higher pitch </li></ul><ul><li>Lower areal density will have higher substrate warpage, which reduced with higher via array </li></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    23. 23. Future Direction: <ul><li>Cleaning of LCP burr and Copper burr </li></ul><ul><li>Electroplating of the vias </li></ul><ul><li>Electrical characterization of the vias </li></ul><ul><li>Lamination of multilayered structure </li></ul><ul><li>Electrical Characterization of the laminated structure </li></ul><ul><li>Reliability analysis of the laminated structure </li></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    24. 24. Acknowledgements: <ul><li>Advisor & Dissertation Committee Members at the University of Arkansas </li></ul><ul><li>The National Science Foundation </li></ul><ul><li>wi Spry Inc., Irvine, CA </li></ul><ul><li>High Density Electronics Center (HiDEC) Staff and Facility </li></ul><ul><li>MMR Lab Colleagues </li></ul><ul><li>Rogers Corporation </li></ul><ul><li>IMAPS 2009 </li></ul>
    25. 25. [1] MSDS, ULTRALAM ® 3000 - Liquid Crystalline Polymer Circuit Material, Rogers Corporation, Arizona, USA [2] Low Temperature Cofire Dielectric Tape Technical information, 951 Green Tape TM , DuPont Microcircuit Materials [3] Summary of Properties for Kapton® Polyimide Film, DuPont Microcircuit Materials [4] Jim Morrison,  Ted Tessier,  and Bo Gu, “A Large Format Modified TEA CO 2 Laser Based Process for Cost Effective Small via Generation,” MCM Proceedings, pp 369-377, 94 [5] Vijay V. Kancharla, Kira K.   Hendricks, and Shaochen Chen, “Micromachining of packaging materials for MEMS using laser” Micromachining and Microfabrication Process Technology VII, Proceeding of SPIE, Vol. 4557, pp 220-224, 2001 [6] Brian J. McDermott, and Sid Ttyzbiak, “Practical application of photo-defined micro-via technology,” 3 rd International Symposium on Advanced Packaging Material, pp 24-28, 1997 [7] Mingwei Li, Hix Ken, Dosser Larry, Hartke Kevin, and Blackshire Jim, “Micromachining of Liquid Crystal Polymer film with Frequency converted diode-pumped Nd: YVO 4 Laser” Photon Processing in Microelectronics and Photonics II, Proceeding of SPIE, Vol. 4977, 2003 [8] Gunter Hagen, and Lars Rebenklau, “Fabrication of smallest vias in LTCC tape,” Electronics Systemintegrations Technology Conference, Dresden, Germany, pp 642-647, 2006 [9] M.A. Sarfaraz, C. Long, and You-Wen Yau, “Enhanced MCM-C Packaged Performance by Formation of improved 3-D interconnections,” Electronic Components and Technology Conference, Proceedings, pp 1067-1071, 1993 [10] James Keating, and Robert Larmouth, “Microvias and Flex – An enabling MCM-L Technology,” International Conference on Multichip Modules and High Density Packaging, pp 342 -384, 1998 [11] T. G. Tessier, and Bill Adams, “Mechanical Punching of Through-Holes in Thin Laminates for Higher Density MCM-L Fabrication” MCM Proceedings, pp 173-181, 1994 [12] Dane Thompson, “Characterization and Design of Liquid Crystal Polymer (LCP) Based Multilayer RF Components and Packages” PhD dissertation 2006, Georgia Tech. [13] T. M. Yue, and K.C. Chan, “Laser Drilling of Liquid Crystal Polymer Composites” Polymer Composites, Vol.19, No.1, 1998 References: Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    26. 26. Thank You ! Questions, Comments & Suggestions
    27. 27. Chemical Etching of LCP & Cu Burr <ul><li>Process Recipe </li></ul>Micro Pits <ul><li>Successful etching of loosely bonded LCP and copper burr using the recipe </li></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center LCP Burr Copper Burr Before LCP Burr Before Copper Burr After After A B C Mechanically Punched Micro Vias DI Water Sonication
    28. 28. Plasma Cleaning of LCP Residual Removal Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center Before O 2 Plasma Cleaning LCP Burr Copper Etched Out After O 2 Plasma Cleaning Before O 2 Plasma Cleaning After O 2 Plasma Cleaning
    29. 29. 30 Minute O 2 Plasma Cleaning After Chemical Etching <ul><li>LCP and copper burr can be removed very efficiently by chemical etching and oxygen plasma cleaning afterword </li></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center
    30. 30. Via Metallization: DC Vs Reverse Pulse Plating (RPP) DC Plating Reverse Pulse Plating <ul><li>Via metallization can be done very efficiently by DC plating as compared to reverse pulse plating in 4.5 Hrs </li></ul>Tuesday, November 03, 2009 IMAPS 2009, San Jose McEnery Convention Center

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