Tip41 npn transistor

383 views

Published on

Published in: Technology, Business
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
383
On SlideShare
0
From Embeds
0
Number of Embeds
1
Actions
Shares
0
Downloads
2
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

Tip41 npn transistor

  1. 1. TIP41 Series(TIP41/41A/41B/41C) TIP41 Series(TIP41/41A/41B/41C) Medium Power Linear Switching Applications • Complement to TIP42/42A/42B/42C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C Value 40 60 80 100 Units V V V V VCEO Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C 40 60 80 100 V V V V VEBO IC Emitter-Base Voltage 5 V Collector Current (DC) 6 ICP Collector Current (Pulse) A 10 A IB Base Current PC Collector Dissipation (TC=25°C) PC Collector Dissipation (Ta=25°C) 2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C 2 A 65 W Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO ICES Parameter * Collector-Emitter Sustaining Voltage : TIP41 : TIP41A : TIP41B : TIP41C Test Condition IC = 30mA, IB = 0 Min. Max. 40 60 80 100 Units V V V V Collector Cut-off Current : TIP41/41A : TIP41B/41C VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.7 0.7 mA mA Collector Cut-off Current : TIP41 : TIP41A : TIP41B : TIP41C VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 400 400 400 400 µA µA µA µA 1 mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE * DC Current Gain VCE = 4V,IC = 0.3A VCE = 4V, IC = 3A VCE(sat) * Collector-Emitter Saturation Voltage IC = 6A, IB = 600mA 1.5 V VBE(sat) * Base-Emitter Saturation Voltage VCE = 4V, IC = 6A 2.0 V fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 30 15 3.0 75 MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2000 Fairchild Semiconductor International Rev. A, February 2000
  2. 2. hFE, DC CURRENT GAIN VCE = 4V 100 10 1 1 10 100 1000 VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 10000 IC /IB = 10 1000 V BE(sat) 100 V CE(sat) 10 1 10000 10 IC[mA], COLLECTOR CURRENT 1000 10000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 IC(MAX) (PULSE) 10 0. 5 ms s 5m IC(MAX) (DC) s 1 TIP41 V CEO MAX. TIP41A VCEO MAX. TIP41B VCEO MAX. TIP41C VCEO MAX. 0.1 PC[W], POWER DISSIPATION 100 1m IC[A], COLLECTOR CURRENT 100 80 60 40 20 0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 4. Power Derating Rev. A, February 2000 TIP41 Series(TIP41/41A/41B/41C) Typical Characteristics
  3. 3. TIP41 Series(TIP41/41A/41B/41C) Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000
  4. 4. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E

×