TIP41, TIP41A, TIP41B,
TIP41C (NPN); TIP42, TIP42A,
TIP42B, TIP42C (PNP)
Complementary Silicon
Plastic Power Transistors
h...
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless othe...
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
TC
80

3.0

60

2.0

40

1.0

20

0

PD, POWER DI...
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
...
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)

hFE , D...
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA

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  1. 1. TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40−60−80−100 VOLTS, 65 WATTS Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125 in Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value MARKING DIAGRAM Unit Collector−Emitter Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCEO 40 60 80 100 Vdc Collector−Base Voltage TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCB 40 60 80 100 Vdc VEB 5.0 Vdc IC 6.0 10 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 65 0.52 W W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ TJ, Tstg – 65 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.67 °C/W Thermal Resistance, Junction−to−Ambient RqJA 57 °C/W Emitter−Base Voltage Collector Current− Continuous Peak Operating and Storage Junction, Temperature Range 1 TO−220AB CASE 221A STYLE 1 2 TIP4xxG AYWW 3 TIP4xx xx A Y WW G = Device Code = 1, 1A, 1B, 1C 2, 2A, 2B, 2C = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. THERMAL CHARACTERISTICS Characteristic 4 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 6 1 Publication Order Number: TIP41A/D
  2. 2. TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 40 60 80 100 − − − − Vdc − − 0.7 0.7 − − − − 400 400 400 400 IEBO − 1.0 mAdc hFE 30 15 − 75 − Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) VCE(sat) − 1.5 Vdc Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.0 Vdc Current−Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C ICEO TIP41, TIP41A, TIP42, TIP42A TIP41B, TIP41C, TIP42B, TIP42C Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) mAdc mAdc ICES TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device Package Shipping TO−220 50 Units / Rail TIP41G TO−220 (Pb−Free) 50 Units / Rail TIP41A TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TIP41 TIP41AG TIP41B TIP41BG TIP41C TIP41CG TIP42 TO−220 50 Units / Rail TIP42G TO−220 (Pb−Free) 50 Units / Rail TIP42A TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TIP42AG TIP42B TIP42BG TIP42C TIP42CG http://onsemi.com 2
  3. 3. TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) TC 80 3.0 60 2.0 40 1.0 20 0 PD, POWER DISSIPATION (WATTS) TA 4.0 0 TC TA 0 40 20 60 100 80 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating VCC +30 V 2.0 RC 0.7 0.5 SCOPE +11 V −9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% t, TIME ( μs) RB 0 TJ = 25°C VCC = 30 V IC/IB = 10 1.0 25 ms D1 0.3 0.2 tr 0.1 0.07 0.05 −4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.03 0.02 0.06 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA Figure 2. Switching Time Test Circuit td @ VBE(off) ≈ 5.0 V 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn−On Time http://onsemi.com 3 4.0 6.0
  4. 4. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 1.0 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) 0.05 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.5 ms 5.0 1.0 ms 3.0 TJ = 150°C 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 SECONDARY BREAKDOWN LTD BONDING WIRE LTD THERMAL LIMITATION @ TC = 25°C (SINGLE PULSE) 0.3 0.2 0.1 5.0 5.0 ms TIP41, TIP42 TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C 10 20 40 60 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 80 100 Figure 5. Active−Region Safe Operating Area 5.0 300 ts t, TIME ( μs) 1.0 TJ = 25°C TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 2.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 tf Cib 100 70 Cob 50 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 30 0.5 6.0 Figure 6. Turn−Off Time 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 30 50
  5. 5. VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) hFE , DC CURRENT GAIN 500 300 200 VCE = 2.0 V TJ = 150°C 100 70 50 25°C 30 20 10 7.0 5.0 0.06 −55 °C 0.1 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 2.0 TJ = 25°C 1.6 1.2 IC = 1.0 A 0.4 0 10 20 30 50 100 200 300 IB, BASE CURRENT (mA) 500 θV, TEMPERATURE COEFFICIENTS (mV/°C) +2.5 TJ = 25°C 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4.0 V 0.4 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 +2.0 *APPLIES FOR IC/IB ≤ hFE/4 +1.5 +1.0 +0.5 +25 °C to +150°C * qVC FOR VCE(sat) 0 −55 °C to +25°C −0.5 +25 °C to +150°C −1.0 −1.5 qVB FOR VBE −55 °C to +25°C −2.0 −2.5 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 Figure 10. “On” Voltages Figure 11. Temperature Coefficients IC, COLLECTOR CURRENT (μ A) 103 101 VCE = 30 V 10 M VCE = 30 V 1.0 M TJ = 150°C 100°C 100 IC = ICES 10−1 REVERSE 10−3 −0.3 −0.2 −0.1 FORWARD 0 +0.1 +0.2 +0.3 IC = 10 x ICES IC ≈ ICES 100 k 25°C 10−2 6.0 IC, COLLECTOR CURRENT (AMP) R BE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS) IC, COLLECTOR CURRENT (AMP) 102 1000 Figure 9. Collector Saturation Region 2.0 V, VOLTAGE (VOLTS) 5.0 A 0.8 Figure 8. DC Current Gain 0 0.06 2.5 A +0.4 +0.5 +0.6 +0.7 10 k IC = 2 x ICES 1.0 k 0.1 k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE−EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance http://onsemi.com 5
  6. 6. TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. TIP41A/D

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