Igbt toshiba

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Igbt toshiba

  1. 1. 2011-3PRODUCT GUIDEDiscrete IGBTs SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g
  2. 2. 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier. Features of the Toshiba Discrete IGBTsThe Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and powerconversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers,plasma display panels (PDPs), strobe flashes and so on. (1) IGBTs also featuring fast switching (2) Low collector-emitter saturation voltage even in the large current area (3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications (4) High input impedance allows voltage drives (5) Available in a variety of packages ConstructionThe basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure.Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction. ▼ ▼ Planar Structure Equivalent Circuit Collector Emitter Electrode Gate n+ n+ n+ Gate p p p p+ n– n+ Collector Collector p+ Emitter Collector Rn- (MOD) Rn- (MOD) D A L P A T G E IN Gate Gate M D R N E O T B IT TE M E A GA R G TE O T ME N LA TAL O p+ U IC S IL IN S LY + n p+ p O n+ P n+ n+ p + p+ p+ n+ Emitter Emitter n+ p+ n+ n + p+ n + AL p ET M or ct lle Co –2–
  3. 3. 2 IGBT Technical OverviewPrior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedanceand fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It isthus difficult to improve the conduction loss of power MOSFETs.On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p+ layer. The IGBThas a low on-state voltage drop due to conductivity modulation.The following figure shows the VCE(sat) curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching byusing carrier lifetime control techniques. Now, Toshiba offers even faster IGBTs with optimized carrier injection into the collector p+layer.In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction and high-frequency-switching applications. The improvements in IGBTs will be spurred by optimized wafers, smaller pattern geometries and improvedcarrier lifetime control techniques. ▼ 900-V IGBT for Soft-Switching 2.8 High-speed: GT60M323 2.6 High-speed: GT50N322A(1000V) VCE(sat)(V) @IC = 50 A, VGE = 15 V 2.4 Ta = 125˚C 2.2 Low-VCE(sat): GT60M303 2.0 Ta = 25˚C 1.8 1.6 GT60M324 1.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Eoff(mJ) @VCC = 140 V, IC = 50 A, VGG = 20 V, RG = 10 Ω, C = 0.33 μF, L = 30 μH Discrete IGBT Development Trends (1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers 1200 V (2) Soft switching (5th gen): Low VCE(sat) due to trench gate structure (3) Soft switching (6.5th gen): RC structure (1) Soft switching (4th gen): Low VCE(sat) due to trench gate structure 900 to (2) Soft switching (5th gen): Low VCE(sat) due to optimized carrier injection and trench gate structure 1500 V (3) Soft switching (6th gen): Thinner wafers and finer process geometries (4) Soft switching (6.5th gen): RC structure (1) High ruggedness (3rd gen): Low VCE(sat) and high ruggedness due to optimized carrier injection and thinner wafers (2) Fast switching (4th gen): High speedy tf due to optimized carrier injection (4) Low VCE(sat) (6th gen): Thinner wafers and finer process geometries 600 V (3) Soft switching (4th gen): Low VCE(sat) due to trench gate structure (5) Soft switching (5th gen): Thinner wafers (6) Soft switching (6th gen): Thinner wafers and finer process geometries (1) Strobe flashes (5th gen): Low VCE(sat) due to trench gate structure 400 V (2) Strobe flashes (6th gen): High current due to trench gate structure and optimized wafers (3) Strobe flashes (7th gen): High current due to optimized wafers and finer process geometries (1) Plasma displays (4th gen): Low VCE(sat) due to trench gate structure and high IC due to lifetime control (2) Plasma displays (5th gen): Low turn-on loss due to finer process geometries 300 to (3) Plasma displays (6th gen): Low turn-on loss due to optimized wafers and finer process geometries 400 V (4) Plasma displays (7th gen): Thinner wafers and finer process geometries Year 2006 2008 2010 2012 –3–
  4. 4. 3 Discrete IGBT Product Lineup TSON-8 SOP-8 TO-220SIS TO-220SM(MXN) TO-3P(N) TO-3P(N)IS TO-3P(LH) Breakdown IGBT Current Applications and Voltage Rating IC (A) Features VCES (V) @Ta = 25˚C @Ta = 25˚C DC Pulse 10 20 GT10J301 GT20J301 20 40 GT20J101 General-purpose motors 600 GT30J301 30 60 General-purpose inverters GT30J101 Hard switching 50 100 GT50J102 fc: up to 20 kHz GT10Q301 10 20 GT10Q101 High ruggedness GT15Q301 1200 15 30 Series GT15Q102 GT25Q301 25 50 GT25Q102 General-purpose inverters GT30J324 Fast switching 30 60 GT30J126 GT30J121 Hard switching 600 fc: up to 50 kHz 50 100 GT50J325 FS series GT50J121 30 100 GT30J322 37 100 GT35J321 GT40J321 40 100 GT40J322 GT40J325 GT40J323 600 GT50J327 GT50J322 100 50 GT50J341 GT50J322H 120 GT50J328 GT60J321 Resonant switching 60 120 GT60J323 Soft switching GT60J323H 15 30 GT15M321 Soft-Switching 35 100 GT35MR21 Series 900 100 GT50MR21 50 120 GT50M322 60 120 GT60M324 GT50N322A 50 120 1000 GT50N324 60 120 GT60N321 1050 50 100 GT50NR21 1200 40 80 GT40QR21 1500 40 80 GT40T321 30 100 GT30J122A GT30J122 PFC 600 40 100 GT40J121 130 GT5G133 Strobe flashes 400 150 GT8G151 GT8G132 200 GT10G131 GT30F124 300 200 GT45F127 GT30F125 330 200 GT45F128 Plasma display 360 200 GT30F131 panels GT30G124 GT30G125 430 200 GT45G127 GT45G128 600 200 GT30J124 : New product4 Part Numbering Scheme Table 1Example GT 60 M 3 03 A Version Letter Voltage (V) Letter Voltage (V) Letter Voltage (V) Serial number C 150 J 600 Q 1200 1: N-channel D 200 K 700 R 1300 2: P-channel E 250 L 800 S 1400 3: N-channel with built-in F 300 M 900 T 1500 freewheeling diode R: N-channel RC-IGBT with G 400 N 1000 U 1600 built-in freewheeling diode H 500 P 1100 V 1700 Voltage rating (see Table 1.) Collector current rating (DC) Discrete IGBT –4–
  5. 5. 5-1 General-Purpose Inverter The fast-switching (FS) series, a new addition to our third-generation IGBTs, features high ruggedness which helps to improve the energy efficiency of electronic equipment. General-Purpose Inverter Air Inverter Washing UPS Inverters Conditioners Machines Rectifier PL PL circuit Inverter Output Input CB Control ▼ Discrete IGBT Trend For general-purpose inverters Our 3rd generation low-loss and low-noise IGBTs are ideal for inverter applications to reduce switching loss and thus improve energy efficiency. The following graphs compare the thermal and turn-on characteristics of our 3rd generation IGBTs and 500-V MOSFETs ▼ ▼ IC - VCE Temperature Characteristics Turn-On Waveform Low saturation voltage with minimal temperature dependence Fast reverse-recovery characteristics due to built-in diode with optimal characteristics 50 IGBT VCE 40 MOSFET IGBT MOSFET Collector Current, IC (A) 30 @VGE = 15 V MOSFET VCE: 100 V/div IGBT IC: 10 A/div 20 IGBT: Ta = 25°C Ic Ta = 125°C 10 @Ta = 125°C MOSFET (500 V / 50 A): VCC = 300 V Ta = 25°C VGE = + 15 V Ta = 125°C 0 di/dt –400 A/μs 0 2 4 6 8 10 Collector - Emitter Voltage, VCE (V) t : 0.1μs/div ▼ Power Loss vs. Carrier Frequency Characteristics Simulation data for inverter applications 80 60 Loss (W/Tr) IGBT @fo = 50 Hz 40 Po = 7.5 kW MOSFET IGBT: Ta = 25°C 20 Ta = 125°C MOSFET (500 V / 50 A): Ta = 25°C Ta = 125°C 0 0 4 8 12 16 20 24 Carrier Frequency, fC (kHz) –5–
  6. 6. 5-1 General-Purpose Inverter ▼ Product Lineup For general-purpose inverters ▼ Circuit Configurations Single Collector Built-in FRD Collector Gate Gate Emitter Emitter 600-V and 1200-V IGBTs Absolute Maximum Ratings VCE(sat) Typ. tf Typ. Circuit Main VCES IC PC Configuration Applications Features Part Number Package @IC @VGE Load Remarks DC Pulsed Tc = 25˚C (*1) (*2) (V) (A) (A) (W) (V) (A) (V) ( s) GT10Q101 1200 10 20 140 TO-3P(N) ◆ 2.1 10 15 0.16 L GT10Q301 1200 10 20 140 TO-3P(N) Built-in FRD 2.1 10 15 0.16 L High VCES (1200V) GT15Q102 1200 15 30 170 TO-3P(N) ◆ 2.1 15 15 0.16 L Motor driving (UPS/PFC) GT15Q301 1200 15 30 170 TO-3P(N) Built-in FRD 2.1 15 15 0.16 L GT25Q102 1200 25 50 200 TO-3P(LH) ◆ 2.1 25 15 0.16 L GT25Q301 1200 25 50 200 TO-3P(LH) Built-in FRD 2.1 25 15 0.16 L GT10J301 600 10 20 90 TO-3P(N) Built-in FRD 2.1 10 15 0.15 L GT20J101 600 20 40 130 TO-3P(N) ◆ 2.1 20 15 0.15 L High VCES 600 20 40 130 TO-3P(N) Built-in FRD 2.1 20 15 0.15 L (600V) GT20J301 GT30J101 600 30 60 155 TO-3P(N) ◆ 2.1 30 15 0.15 L GT30J301 600 30 60 155 TO-3P(N) Built-in FRD 2.1 30 15 0.15 L GT50J102 600 50 100 200 TO-3P(LH) ◆ 2.1 50 15 0.15 L 600-V Fast IGBTs (4th Generation) (FS: Fast Switching) Absolute Maximum Ratings VCE(sat) Typ. tf Typ. Circuit Main VCES IC PC Configuration Applications Features Part Number Package @IC @VGE Load Remarks DC Pulsed Tc = 25˚C (*1) (*2) (V) (A) (A) (W) (V) (A) (V) ( s) Inverter power supplies GT30J121 600 30 60 170 TO-3P(N) ◆ 2.0 30 15 0.05 L (UPS/PFC/motor) Fast switching GT30J126 600 30 60 90 TO-3P(N)IS ◆ 1.95 30 15 0.05 L Isolation Package GT30J324 600 30 60 170 TO-3P(N) Built-in FRD 2.0 30 15 0.05 L GT50J121 600 50 100 240 TO-3P(LH) ◆ 2.0 50 15 0.05 L GT50J325 600 50 100 240 TO-3P(LH) Built-in FRD 2.0 50 15 0.05 L 600-V IGBTs for Low Frequency Switching Absolute Maximum Ratings VCE(sat) Typ. tf Typ. Circuit Main VCES IC PC Configuration Applications Features Part Number Package @IC @VGE Load Remarks DC Pulsed Tc = 25˚C (*1) (*2) (V) (A) (A) (W) (V) (A) (V) ( s) Power factor Low-frequency GT30J122 600 30 100 75 TO-3P(N)IS ◆ 2.1 50 15 0.25 R Partial Switching Converter correction switching GT30J122A 600 30 100 120 TO-3P(N) ◆ 1.7 50 15 0.2 R Partial Switching Converter GT40J121 600 40 100 80 TO-3P(N)IS ◆ 1.45 40 15 0.2 R Partial Switching Converter *1 ◆ : Single : New product FRD: Fast Recovery Diode *2 R : Resistive load L : Inductive load –6–
  7. 7. 5-2 Soft-Switching Applications Static inverters in IH cooktops, IH rice cookers and microwave ovens utilize a soft-switching technique which exhibits low switching loss. Toshiba offers IGBTs suitable for soft-switching applications. Microwave Ovens IH Rice Cookers IH Cookers MFPs AC Input Voltage Circuit IGBT Rating Voltage Resonance Waveform VCES = 900 V to 1050 V 100 V to 120 V IC = 15 A to 60 A IC IC VCE VCE VCES = 1200 V to 1500 V 200 V to 240 V IC = 40 A Current Resonance Waveform IC VCES = 600 V 100 V to 240 V IC IC = 30 A to 60 A VCE VCE IH: Induction heating MFP: Multifunction Printer –7–
  8. 8. 5-2 Soft-Switching Applications 6.5th-Generation RC-IGBT Series (New Products) The RC-IGBT (Reverse-Conducting IGBT) Series consists of a freewheeling diode monolithically integrated in an IGBT chip. This is realized by forming an N layer through the P layer on the collector side. The RC-IGBT Series is environmentally friendly since it eliminates the need for a separate diode. Additionally, it also features a reduced thermal resistance of the freewheeling diode. ▼ Cross-Sectional View of the RC-IGBT Emitter Gate N P N N P Collector ▼ Product Lineup For soft switching Absolute Maximum Ratings VCE(sat) Typ. tf Typ. @Ta = 25˚C @Ta = 25˚C IC PC Circuit Main Features Part Number VCES Package Remarks Configuration Applications (V) DC Pulsed TC = 25˚C Tj IC VGE Load (*1) (A) (A) (W) (˚C) (V) (A) (V) (μs) (*2) IH rice cookers and IH cooktops GT35MR21 900 35 100 82 150 TO-3P(N)IS Built-in FWD 1.6 35 15 0.2 R 6.5th generation Voltage resonance 6.5th generation GT50MR21 900 50 100 230 175 TO-3P(N) Built-in FWD 1.7 50 15 0.18 R AC 100 V Tj = 175˚C 6.5th generation GT50NR21 1050 50 100 230 175 TO-3P(N) Built-in FWD 1.8 50 15 0.2 R Tj = 175˚C 6.5th generation AC 200 V GT40QR21 1200 40 80 230 175 TO-3P(N) Built-in FWD 1.9 40 15 0.2 R Tj = 175˚C *1 Abbreviation in the “Circuit Configuration” column : New product FWD: Free-Wheeling Diode *2 Abbreviation in the “Load” column R : Resistive load –8–
  9. 9. ▼ Product Lineup For soft switching ▼ Circuit Configurations Single Collector Built-in FRD Collector Gate Gate Emitter Emitter IGBTs for Soft-Switching Applications Absolute Maximum Ratings VCE(sat) Typ. tf Typ. IC PC Circuit Main Features Part Number VCES Tj Package Configuration @IC @VGE Load Remarks Applications (V) DC Pulsed TC = 25˚C (˚C) (*1) (V) (A) (V) (μs) (*2) (A) (A) (W) GT30J322 600 30 100 75 150 TO-3P(N)IS Built-in FRD 2.1 50 15 0.25 R GT35J321 600 37 100 75 150 TO-3P(N)IS Built-in FRD 1.9 50 15 0.19 R GT40J321 600 40 100 120 150 TO-3P(N) Built-in FRD 2.0 40 15 0.11 R Fast switching GT40J322 600 40 100 120 150 TO-3P(N) Built-in FRD 1.7 40 15 0.2 R GT40J323 600 40 100 170 150 TO-3P(N) Built-in FRD 2.0 40 15 0.06 R Fast switching GT40J325 600 40 100 80 150 TO-3P(N)IS Built-in FRD 1.45 40 15 0.2 R 6th generation Current resonance GT50J322 600 50 100 130 150 TO-3P(LH) Built-in FRD 2.1 50 15 0.25 R AC 200 V GT50J322H 600 50 100 130 150 TO-3P(LH) Built-in FRD 2.2 50 15 0.11 R Fast switching IH rice cookers and IH cooktops GT50J327 600 50 100 140 150 TO-3P(N) Built-in FRD 1.9 50 15 0.19 R 6th generation GT50J341 600 50 100 200 175 TO-3P(N) Built-in FRD 1.6 50 15 0.15 R Tj = 175˚C GT50J328 600 50 120 140 150 TO-3P(N) Built-in FRD 2.0 50 15 0.10 R Fast switching GT60J321 600 60 120 200 150 TO-3P(LH) Built-in FRD 1.55 60 15 0.30 R GT60J323 600 60 120 170 150 TO-3P(LH) Built-in FRD 1.9 60 15 0.16 R GT60J323H 600 60 120 170 150 TO-3P(LH) Built-in FRD 2.1 60 15 0.12 R Fast switching GT15M321 900 15 30 55 150 TO-3P(N)IS Built-in FWD 1.8 15 15 0.20 R GT50M322 900 50 120 156 150 TO-3P(N) Built-in FWD 2.1 60 15 0.25 R Voltage resonance GT60M324 900 60 120 254 175 TO-3P(N) Built-in FWD 1.7 60 15 0.11 R Tj = 175˚C AC 100 V GT50N322A 1000 50 120 156 150 TO-3P(N) Built-in FWD 2.2 60 15 0.10 R Fast switching GT50N324 1000 50 120 150 150 TO-3P(N) Built-in FWD 1.9 60 15 0.11 R 6th generation GT60N321 1000 60 120 170 150 TO-3P(LH) Built-in FWD 2.3 60 15 0.25 R AC 200 V GT40T321 1500 40 80 230 175 TO-3P(N) Built-in FWD 2.15 40 15 0.24 R Tj = 175˚C*1 Abbreviations in the “Circuit Configuration” column : New product FRD: Fast Recovery Diode, FWD: Free-Wheeling Diode*2 Abbreviation in the “Load” column R : Resistive load –9–
  10. 10. 5-2 Soft-Switching Applications ▼ Comparisons Between Hard and Soft Switching (diagrams shown only as a guide) Hard Switching Soft Switching High-current, SOA high-voltage SOA Thermal resistance limit area locus S/B limit area IC IC High-current, low-voltage and low-current, high-voltage locus VCE VCE SOA Locus for Hard Switching SOA Locus for Soft Switching VCE VCE IC VCE IC IC Switching Characteristics Current Resonance Voltage Resonance (Example) (Example) (Example)5-3 Strobe Flash Applications Strobe flash control is now prevalent in digital still cameras. Package sizes are getting smaller, and logic levels are increasingly used to represent the gate drive voltage. Toshiba offers compact IGBTs featuring low gate drive voltage. ■ As a voltage-controlled device, the IGBT requires only a few components for drive circuit. ■ IGBTs require fewer components for the strobe flash circuit (compared to SCRs). ■ Strobe flash IGBTs are capable of switching large currents. DSC, Compact Camera Single-Lens Reflex Camera – 10 –
  11. 11. 5-3 Strobe Flash Applications ▼ Product Lineup For strobe flashes 2.5-V to 4.0-V Gate Drive Series The IGBT can operate with a gate drive voltage of 2.5 V to 4.0 V. The common 3.3-V or 5-V internal power supply in a camera can be used as a gate drive power supply to simplify the power supply circuitry. A zener diode is included between the gate and emitter to provide ESD surge protection. ▼ Example of an IGBT Gate Drive Circuit (3.3-V Power Supply) Resistor Xe lamp P-ch 910 Ω Trigger transformer Main 3.3-V power supply Capacitor 91 Ω 20 kΩ 1.2 kΩ Resonant capacitor N-ch IGBT 470 Ω GT8G151 3V 0 3.3-V Power Supply Gate Drive VCE(sat) (V) PC (W) Part Number VCES / IC Voltage Min Package Remarks Typ. VGE / IC @Ta = 25˚C (V) GT5G133 400 V / 130 A 2.5 3.0 2.5 V / 130 A 0.83 TSON-8 7th generation GT8G151 400 V / 150 A 2.5 2.65 2.5 V / 150 A 0.83 TSON-8 7th generation : New product 5-V Power Supply Gate Drive VCE(sat) (V) PC (W) Part Number VCES / IC Voltage Min Package Remarks Typ. VGE / IC @Ta = 25˚C (V) GT8G132 400 V / 150 A 4.0 2.3 4.0 V / 150 A 1.1 SOP-8 5th generation GT10G131 400 V / 200 A 4.0 2.3 4.0 V / 200 A 1.9 SOP-8 5th generation <Connection Examples > Board connection example Collector 5,6,7,8 Gate 4 Emitter 1,2,3 All the emitter terminals should be connected together. – 11 –
  12. 12. 5-4 Plasma Display Panel Applications Plasma Displays Parallel MOSFETs have been used for the drive circuitry of plasma display panels (PDPs). Recently, however, IGBTs are commonly used in large current applications due to their superior current conduction capability. ▼ Example of a Plasma Display Panel Drive Circuit ● PDP (Sustain circuit) X electrodes (X output) X drive circuit C1 Energy recovery circuit Sustain circuit Separation circuit Panel Vsus Y drive circuit Y electrodes (Y output) C2 ▼ Product Lineup For plasma display panels 300-V IGBTs PC (W) Part Number VCES / Icp @3 μs VCE(sat) (V) Typ. @120 A Package Remarks @Tc = 25˚C GT30F124 300 V / 200 A 2.3 25 TO-220SIS 6th generation GT30F125 330 V / 200 A 1.9 25 TO-220SIS 6th generation GT45F127 300 V / 200 A 1.6 26 TO-220SIS 6th generation GT45F128 330 V / 200 A 1.45 26 TO-220SIS 6th generation GT30F131 360 V / 200 A 1.9 140 TO-220SM(MXN) 6th generation : New product 400-V IGBTs PC (W) Part Number VCES / Icp @3 μs VCE(sat) (V) Typ. @120 A Package Remarks @Tc = 25˚C GT30G124 430 V / 200 A 2.5 25 TO-220SIS 6th generation GT30G125 430 V / 200 A 2.1 25 TO-220SIS 6th generation GT45G127 430 V / 200 A 1.7 26 TO-220SIS 6th generation GT45G128 430 V / 200 A 1.55 26 TO-220SIS 6th generation : New product 600-V IGBTs PC (W) Part Number VCES / Icp @3 μs VCE(sat) (V) Typ. @120 A Package Remarks @Tc = 25˚C GT30J124 600 V / 200 A 2.4 26 TO-220SIS 5th generation – 12 –
  13. 13. 6 Package Dimensions Unit: mm▼ ▼ SOP-8 TSON-8 8 5 6.0 ± 0.3 4.4 ± 0.2 0.25 0.3 ± 0.05 0.65 ± 0.05 8 5 0.2 1 4 3.3 ± 0.1 3.1 ± 0.1 0.595 typ. 0.4 ± 0.1 0.25 M 1.27 5.5 max 1 4 – 0.05 0.175 ± 0.03 + 0.1 3.1 ± 0.1 3.3 ± 0.1 0.15 5.0 ± 0.2 0.85 ± 0.05 0.15 1.5 ± 0.2 0.15 0.5 ± 0.2 1, 2, 3. Emitter 1, 2, 3. Emitter – 0.05 4. Gate 4. Gate + 0.1 0.1 5, 6, 7, 8. Collector 5, 6, 7, 8. Collector 0.1▼ TO-220SM(MXN) 10.16 ± 0.12 1.3 ± 0.1 7.98 ± 0.1 A 1.27 ± 0.13 8.12 ± 0.11 10.35 ± 0.25 + 0.26 9.14– 0.25 1.05 ± 0.1 1.7 ± 0.2 1.5 ± 0.1 3.0 ± 0.25 1.7 ± 0.1 0.81 ± 0.1 0.25 M A 2.55 2.55 0.1 ± 0.1 + 0.13 4.44– 0.12 2.55 ± 0.25 1 2 3 1. Gate 2. Collector 3. Emitter – 13 –
  14. 14. 6 Package Dimensions Unit: mm▼ ▼ TO-220SIS TO-3P(N) 10 ± 0.3 φ3.2 ± 0.2 2.7 ± 0.2 15.9 max φ3.2 ± 0.2 3.9 3.0 2.0 1.0 4.5 15 ± 0.3 20.0 ± 0.3 3.3 max 2.0 9.0 1.14 ± 0.15 2.8 max 13 ± 0.5 20.5 ± 0.5 2.0 ± 0.3 0.69 ± 0.15 + 0.3 φ0.25 M A 1.0 – 0.25 2.54 2.54 5.45 ± 0.2 5.45 ± 0.2 2.6 ± 0.1 + 0.3 0.6 – 0.1 1.8 max 2.8 0.64 ± 0.15 4.5 ± 0.2 4.8 max 1. Gate 1. Gate 1 2 3 2. Collector 2. Collector 1 2 3 3. Emitter 3. Emitter▼ ▼ TO-3P(LH) TO-3P(N)IS 20.5 max φ3.3 ± 0.2 6.0 15.8 ± 0.5 φ3.6 ± 0.2 3.5 26.0 ± 0.5 5.5 4.0 21.0 ± 0.5 3.6 max 2.50 15.5 1.5 11.0 2.0 1.5 20.0 ± 0.6 2.5 2.0 19.4 min 3.0 2.0 + 0.3 + 0.25 1.0 – 0.15 1.0 – 0.25 5.45 ± 0.15 5.45 ± 0.15 5.45 ± 0.2 5.45 ± 0.2 1.0 + 0.2 + 0.25 0.6 – 0.10 5.2 max + 0.25 – 0.15 3.15 – 0.1 5.0 ± 0.3 1 2 3 1.5 2.8 0.6 1. Gate 1. Gate 1 2 3 2. Collector 2. Collector 3. Emitter 3. Emitter – 14 –

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