TRANSISTORES
JHESSEL GUZMÁN VARGAS
Física Electrónica
TRANSISTOR IGBT -
NGTB50N60FLWG
Features
• Low Saturation Voltage using Trench with
Field Stop Technology
• Low Switching ...
CARACTERISTICAS
TRANSISTOR N-Channel JFETs -
2N/PN/SST4117A Series
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-...
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −4...
ESPECIFICACIONES
TRANSISTOR MOSFET - 2N7002
60 V, 300 mA N-channel
CARACTERISTICAS
TRANSISTOR - 56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs
Features
• 56A, 100V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and Saber ...
TEST DEL CIRCUITO
TRANSISTOR FAIRCHILD
SEMICONDUCTOR - 2N5457
N-Channel General Purpose Amplifier
This device is a low level audio amplifier...
CARACTERISTICAS
Transistores
Transistores
Transistores
Upcoming SlideShare
Loading in …5
×

Transistores

479 views

Published on

especificaciones tecnicas de 5 Transistores

Published in: Education, Business, Technology
0 Comments
1 Like
Statistics
Notes
  • Be the first to comment

No Downloads
Views
Total views
479
On SlideShare
0
From Embeds
0
Number of Embeds
2
Actions
Shares
0
Downloads
25
Comments
0
Likes
1
Embeds 0
No embeds

No notes for slide

Transistores

  1. 1. TRANSISTORES JHESSEL GUZMÁN VARGAS Física Electrónica
  2. 2. TRANSISTOR IGBT - NGTB50N60FLWG Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 5 s Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS)
  3. 3. CARACTERISTICAS
  4. 4. TRANSISTOR N-Channel JFETs - 2N/PN/SST4117A Series DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers.
  5. 5. ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150C Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175C (PN, SST Prefix) . . . . . . . . . . . . . −55 to 150C Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300C Power Dissipation (case 25C) : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (PN, SST Prefix)b . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2 mW/C above 25C b. Derate 2.8 mW/C above 25C
  6. 6. ESPECIFICACIONES
  7. 7. TRANSISTOR MOSFET - 2N7002 60 V, 300 mA N-channel
  8. 8. CARACTERISTICAS
  9. 9. TRANSISTOR - 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
  10. 10. Features • 56A, 100V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and Saber Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
  11. 11. TEST DEL CIRCUITO
  12. 12. TRANSISTOR FAIRCHILD SEMICONDUCTOR - 2N5457 N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.
  13. 13. CARACTERISTICAS

×