Teknologi Sel Surya (13)

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Teknologi Sel Surya (13)

  1. 1. TeknologiSel Surya <br />SatwikoSidopekso<br />Sesion #13<br />JurusanFisika<br />FakultasMatematikadanIlmuPengetahuanAlam<br />
  2. 2. Outline <br />Optical Characteristic <br />Reflactive Index<br />Optical Energy Gap<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />2<br />06/01/2011<br />
  3. 3. Optical Characteristic<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />3<br />06/01/2011<br />
  4. 4.                                                                            <br />                                                                       <br />TEM cross-section of a 10nm transistor<br />                                                                               <br />APh 183: Physics of Semiconductors and Devices<br />Tuesday and Thursday, 9:00-10:30 am<br />104 Watson<br />Instructor: H.A. Atwater<br />Complement #2:What Changes the Bandgap?<br />4<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  5. 5. Band structure of Si at 300 K.<br />5<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  6. 6. Temperature Dependences of Silicon<br />Indirect and Direct Bandgap<br /><ul><li>Temperature dependence of the energy gap</li></ul>      <br />Eg = 1.17 - 4.73·10-4·T2/(T+636) (eV),<br />where T is temperature in degrees K. <br /><ul><li>Temperature dependence of the direct band gap EΓ2</li></ul>       <br />EΓ2 = 4.34 - 3.91·10-4·T2/(T+125) (eV)<br />6<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  7. 7. Absorption spectrum of <br />high purity Si<br />Macfarlane, G. G., T. P. McLean, J. E. Quarrington, and V. Roberts, J. Phys. Chem. Solids 8, (1959) 388-392.<br />7<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  8. 8. Absorption spectrum of <br />high purity Si<br />Sze, S. M., Physics of Semiconductor Devices, John Wiley and Sons, N.Y., 1981<br />Jellison, Jr., G. E. and F. A. Modine, Appl. Phys. Lett- 41, 2 (1982) 180-182<br />8<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  9. 9. Si absorption edge at <br />different doping levels <br />(T = 300 K)<br /><ul><li>Wolfson, A. A. and V. K. Subashiev, Fiz. Tekh. Poluprovodn. 1, 3 (1967) 397-404 (in Russian)</li></ul>9<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  10. 10. Electrical and optical energy gap narrowing in Silicon with donor doping density<br />Van Overstraeten, R. J. and R. P. Mertens, Solid State Electron. 30, 11 (1987) 1077- 1087. <br />10<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  11. 11. Dependence of the Silicon Energy Gap on Hydrostatic Pressure<br />Eg=Eg(0)-1.4·10-3P (eV) <br />11<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  12. 12. 12<br />SnGe<br />Ge<br />Conduction band<br />Valence band<br />Diamond2<br />2p<br />2s<br /> Energy (eV)<br />Hydrostatic Component inc. Eg<br />Symmetry of strain axis w.r.tEg,min determines if splitting occurs<br />a0<br />o<br />Lattice Spacing (A)<br />Tetragonal distortion – 2 components<br />hydrostatic compression<br />uniaxial elongation<br />Energy Gap Shift in Strained SnGe/Ge Semiconductor Heterostructures:Deformation Potential Theory*<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  13. 13. Band structure of GaAs at 300 K<br />13<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  14. 14. GaAs Energy Gap <br />Temperature Dependences<br />Temperature dependence of the energy gap<br />Eg=1.519-5.405·10-4·T2/(T+204) (eV)<br />where T is temperatures in degrees K (0 < T < 103).<br />Temperature dependence of the energy difference between the top of the valence band and the bottom of the L-valley of the conduction band<br />EL=1.815-6.05·10-4·T2/(T+204) (eV)<br />Temperature dependence of the energy difference between the top of the valence band and the bottom of the X-valley of the conduction band<br />EX=1.981-4.60·10-4·T2/(T+204) (eV)<br />14<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  15. 15. GaAs absorption edge at 297 K <br />at different p-type doping levels<br />15<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  16. 16. T-dependence of the relative populations of the Γ, L and X valleys in GaAs<br />Blakemore, J. S., J. Appl. Phys.53, 10 (1982) R123-R181<br />16<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  17. 17. Franz-Keldysh Shift of Energy Gap <br />in an Electric Field (no excitons)<br />W. Franz, Z. Naturforsch. 13a, 484 (1958).<br />L. V. Keldysh, Zh. Eksp. Teor. Fiz. 34, 1138 (1958) [Sov. Phys. — JETP 7, 788 (1958)].<br />17<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  18. 18. Franz-Keldysh Shift of Exciton<br />Energy Gap in Electric Field<br />J. D. Dow and D. Redfield, Phys. Rev. B 1, 3358 (1970).<br />18<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  19. 19. Quantum-Confined Stark <br />Effect in Quantum Wells<br />D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Electric Field Dependence of Optical Absorption Near the Band Gap of Quantum-Well Structures," Phys. Rev. B 32, 1043-1060 (1985).<br />19<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  20. 20. 20<br />Integrated DFB-EA Transmitter<br />10Gb/s module, Ith = 20mA, Pmax = 4mW @80mA , extinction ratio = 15dB for -2.5V.<br />06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />
  21. 21. 06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />21<br />
  22. 22. 06/01/2011<br />© 2010 Universitas Negeri Jakarta | www.unj.ac.id |<br />22<br />TerimaKasih<br />

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