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A Novel Low Power Energy Efficient SRAM Cell With Reduced Power Consumption using MTCMOS Technique

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In modern high performance integrated circuits, maximum of the total active mode energy is consumed due to leakage current. SRAM cell array is main source of leakage current since majority of transistor are utilized for on-chip memory in today high performance microprocessor and system on chip designs. Therefore the design of low leakage SRAM is required. Reducing power dissipation, supply voltage, leakage currents, area of chip are the most important parameters in today`s VLSI designs. But scaling of these parameters will lead to drastic increase in sub threshold leakage currents and power dissipation because of that performance of the design is degraded. So to overcome these issues it is better to concentrate on reduction of active leakage currents and dynamic power dissipation by using power reduction techniques. In this paper 9T SRAM (data retention p-gated) cell for low voltage and energy constrain application is analyzed with respect to power dissipation, area and delay. The analyzed design of 9T SRAM cell with MTCMOS technique has been proposed. Designed circuits are simulated in Microwind 3.1 VLSI CAD Tool in 90 and 65nm CMOS technology.

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IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
Volume 5, Issue 1, Ver. I (Jan - Feb. 2015), PP 42-49
e-ISSN: 2319 – 4200, p-ISSN No. : 2319 – 4197
www.iosrjournals.org
DOI: 10.9790/4200-05114249 www.iosrjournals.org 42 | Page
A Novel Low Power Energy Efficient SRAM Cell With Reduced
Power Consumption using MTCMOS Technique
S. Mohan Das1
, K. S. Kiran Kumar2
, A.Madhulatha3
1
(Associate Professor, ECE Department, AVR&SVR CET, Nandyal, Kurnool, Andhra Pradesh, India)
2
(Assistant Professor, ECE Department, AVR&SVR CET, Nandyal, Kurnool, Andhra Pradesh, India)
3
(P.G. Student, ECE Department, AVR&SVR CET Nandyal, Kurnool, Andhra Pradesh, India)
Abstract: In modern high performance integrated circuits, maximum of the total active mode energy is
consumed due to leakage current. SRAM cell array is main source of leakage current since majority of
transistor are utilized for on-chip memory in today high performance microprocessor and system on chip
designs. Therefore the design of low leakage SRAM is required. Reducing power dissipation, supply voltage,
leakage currents, area of chip are the most important parameters in today`s VLSI designs. But scaling of these
parameters will lead to drastic increase in sub threshold leakage currents and power dissipation because of that
performance of the design is degraded. So to overcome these issues it is better to concentrate on reduction of
active leakage currents and dynamic power dissipation by using power reduction techniques. In this paper 9T
SRAM (data retention p-gated) cell for low voltage and energy constrain application is analyzed with respect to
power dissipation, area and delay. The analyzed design of 9T SRAM cell with MTCMOS technique has been
proposed. Designed circuits are simulated in Microwind 3.1 VLSI CAD Tool in 90 and 65nm CMOS technology.
Keywords: CMOS, 6T SRAM cell, 8T SRAM cell, 9T SRAM cell, MTCMOS, Low Power Consumption.
I. Introduction
Development of digital Integrated Circuits is challenged by high power consumption and greater
threshold leakages. Higher clock speed combination with greater integration functionality and smaller process
geometries contributed to significant growth in power density. Scaling improves functionality and density of
transistors on a chip. Scaling helps to increase operation speed and performance of IC designs. As voltages scale
down with geometries, Vth- threshold voltages must also decrease to gain the performance advantages of new
technology, but leakage current increases exponentially.
Low power and high-stability have been the main issues of SRAM designs as the demand of the
portable electronic market constantly urges for less power-hungry architectures [1]. Many techniques have been
introduced to fulfill this requirement such as scaling the supply voltage, using Multi threshold CMOS process to
minimize the leakage, dividing the SRAM macro into multiple sub-macros to enhance its stability and to reduce
dynamic power. The second challenge in designing a robust SRAM is to ensure a reasonable noise margin,
which is normally measured by the Static Noise Margin (SNM).[2]. According to, these design factors degrade
when threshold voltage variation increases and are also linearly dependent on the reduction of the supply
voltage. As a result, it is extremely difficult to maintain the cell stability as technology enters less than 100 nm
regime. Several more-than-6T SRAM cell designs are given in [3], to improve the stability and power
dissipation. In these papers separate Read and Write ports are employed and hence the cell’s SNM can be
optimized.
Sub threshold leakage current is much larger than the other leakage current and is calculated by using
the following equation.
IDS=K (1-℮V
DS/V
T) ℮ (VGS-VT +αVDS/αVT).
Technique used for minimization of static and dynamic power dissipations in SRAM cell during
write/read operation is MTCMOS. MTCMOS technology provides low leakage and high performance operation
by utilizing high speed, low threshold voltage (Vthl) transistors during active mode and low leakage, high
threshold voltage (VthH) transistors during sleep mode. This technology, also called as power gating, the wake
up latency and power plane integrity are key issues. Several researchers have proposed methods for optimal
sizing of sleep transistors in a given circuit to meet a performance constraint.
In this paper a novel 9T MTCMOS SRAM cell is proposed.[8]. A charge recycling technique is used to
minimize the leakage currents and static energy dissipation during the mode transitions. The total power
dissipations at different temperatures and supply voltages for assessing stability at different pullup ratios have
been determined for the proposed SRAM cell and compared with those of the other existing SRAM cells.
A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption
DOI: 10.9790/4200-05114249 www.iosrjournals.org 43 | Page
This paper mainly focuses on reduction of power consumption at higher performance with MTCMOS
technique. Section-II describes the design of conventional 1-bit SRAM cells (existing cells)[9]. Section-III
describes the design of Proposed MTCMOS SRAM cell. Section-IV presents the simulation results of proposed
SRAM cell. Section-V concludes this paper.
II. Conventional SRAM
A. Conventional 6T SRAM cell:
Fig. 1 shows the circuit diagram of a conventional SRAM cell. Word line (WL) is used for enabling the
access transistors T2 and T5 for write operations [3]. Bit lines BL and BL bar are used to store the data and its
compliment. For writing operation, one bit line is high and the other bit line is low. For writing “0”, BL is low
and BL bar is high. When the word line (WL) is asserted high, transistors T2 and T5 are ON and any charge
stored in the BL goes through T2-T3 path to ground. Due to zero value on Q bar, the transistor T4 is ON and T6
is OFF. So the charge is stored at Q bar line. Similarly in the write “1” operation, BL is high and BL bar is low,
due to this T6 is ON and the charge stored on Q bar is discharged through the T5-T6 path and due to this low
value on the Q bar , T1 is ON and T3 is OFF, so the charge is stored on the Q.
Fig 1. Conventional 6T SRAM Cell.
Before the read operation of “1” at Q (for example) begins, BL and BL bar are pre-charged to as high
as Vdd. When the WL is selected, the access transistors T2 and T5 are turned ON. Because of the pull-up
transistor T1 ON and pull down transistor T3 OFF, voltage of BL will be nearly Vdd. On the other side, current
will flow from the pre-charged BL bar to ground, thus discharging BL bar line through T5-T6 path to ground;
T4 being OFF. Thus, a differential voltage develops between BL and BL bar lines. This small potential
difference between the bit lines is sensed and amplified by the sense amplifier at the data output
B. Conventional 8T SRAM cell:
8T SRAM cell [4] is shown in Figure 2. This cell uses the same 6T SRAM structure for the writing
operation. For reading, it uses a separate bit line, RBL with RWL as its control signal. During writing, the
PMOS and NMOS transistors of the inverters can be maintained at the minimum width as the read operation is
separated. The RBL is read according to the value stored at the storage nodes when RWL is high.
Fig2. Conventional 8T SRAM Cell.
A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption
DOI: 10.9790/4200-05114249 www.iosrjournals.org 44 | Page
C. Conventional 9T SRAM cell:
The 9T SRAM [8] is shown in Fig. 3. “Write” occurs just as in the 6T SRAM cell. “Read” occurs
separately through N5, N6 and N7 controlled by the Read Signal RD going high. This design has the problem of
the high bit line capacitance with more pass transistors on the bit line and it can be minimized by placing sleep
transistors on bit line which was explained in section- III.
Fig 3. Conventional 9T SRAM Cell.
III. Proposed MTCMOS SRAM Cell
Low-power and high performance design requirements of modern VLSI technology can be achieved by
using MTCMOS technology. This technique uses low, normal and high threshold voltage transistors in designing
a CMOS circuit. Supply and threshold voltages are reduced with the scaling of CMOS technologies. Lowering of
threshold voltages leads to an exponential increase in the sub threshold leakage current. The low-threshold (Vtl)
transistors which have high performance are used to reduce the propagation delay in the critical path. High-
threshold (Vth) transistors which have less power consumption are used to reduce the power consumption in the
shortest path.
The multi threshold CMOS technology has two main parts. First, “active” and “sleep” operational
modes are associated with MTCMOS technology, for efficient power management. Second, two different
threshold voltages are used for N channel and P channel MOSFET in a single chip. These apply on between the
low threshold voltage (low-Vt) gates from the power supply and the ground line via cut-off high threshold
voltage (high-Vt) sleep transistors is also known as “power gating”. Schematic of power gating technique is
shown in below Fig. 4. And transistor level circuit is shown in Fig. 5 [8].
Fig 4. MTCMOS Technique.
A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption
DOI: 10.9790/4200-05114249 www.iosrjournals.org 45 | Page
Operation of 9T MTCMOS SRAM cell is same as conventional 9T SRAM cell as mentioned in section
II – C, there it is having large power dissipation because of high bit line capacitance due to more switching
transitions at bit line node and it can be reduced by placing high threshold transistors (pmos & nmos) between
supply and ground, so that the unwanted and more transitions can be decreased by controlling switching
transistors (Vth) which are placed between power supply and ground.[5],[6].
Fig.5 Proposed MTCMOS SRAM Cell.
IV. Simulation Results
In this section, the total write power dissipations at different voltage levels and static noise margins
(SNM) are calculated and the simulation results are compared to those of other SRAM cells. Analog and
schematic simulations have been done in 65nm environment with the help of Microwind 3.1 by using BSimM4
model.[10].
A. Power Dissipation Analysis:
Table I shows the comparison of total power dissipations (static power dissipation plus dynamic power
dissipation together) of existing SRAM cells and the proposed SRAM cell for write operations in 90nm and
Table II shows results in 65nm. The proposed cell dissipates lesser power than the other existing SRAM cells
even at higher temperatures.
Fig.6 Layout of Proposed MTCMOS SRAM Cell.
A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption
DOI: 10.9790/4200-05114249 www.iosrjournals.org 46 | Page
Fig7. Waveform of Proposed 9T MTCMOS SRAM Cell (V vs T).
Fig.8 Waveform Of Proposed 9T MTCMOS SRAM Cell (V Vs I).
Fig9. Id/Vd Characteristics Of Nmos Devices In Low Leakage Mode At Room Temperature.
A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption
DOI: 10.9790/4200-05114249 www.iosrjournals.org 47 | Page
Fig10. Id/Vd Characteristics Of Pmos Devices In Low Leakage Mode At Room Temperature.
Fig11. Id/Vd Characteristics Of Nmos Devices In High Speed Mode At Room Temperature.
Fig12. Id/Vd Characteristics Of Pmos Devices In High Speed Mode At Room Temperature.
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A Novel Low Power Energy Efficient SRAM Cell With Reduced Power Consumption using MTCMOS Technique

  • 1. IOSR Journal of VLSI and Signal Processing (IOSR-JVSP) Volume 5, Issue 1, Ver. I (Jan - Feb. 2015), PP 42-49 e-ISSN: 2319 – 4200, p-ISSN No. : 2319 – 4197 www.iosrjournals.org DOI: 10.9790/4200-05114249 www.iosrjournals.org 42 | Page A Novel Low Power Energy Efficient SRAM Cell With Reduced Power Consumption using MTCMOS Technique S. Mohan Das1 , K. S. Kiran Kumar2 , A.Madhulatha3 1 (Associate Professor, ECE Department, AVR&SVR CET, Nandyal, Kurnool, Andhra Pradesh, India) 2 (Assistant Professor, ECE Department, AVR&SVR CET, Nandyal, Kurnool, Andhra Pradesh, India) 3 (P.G. Student, ECE Department, AVR&SVR CET Nandyal, Kurnool, Andhra Pradesh, India) Abstract: In modern high performance integrated circuits, maximum of the total active mode energy is consumed due to leakage current. SRAM cell array is main source of leakage current since majority of transistor are utilized for on-chip memory in today high performance microprocessor and system on chip designs. Therefore the design of low leakage SRAM is required. Reducing power dissipation, supply voltage, leakage currents, area of chip are the most important parameters in today`s VLSI designs. But scaling of these parameters will lead to drastic increase in sub threshold leakage currents and power dissipation because of that performance of the design is degraded. So to overcome these issues it is better to concentrate on reduction of active leakage currents and dynamic power dissipation by using power reduction techniques. In this paper 9T SRAM (data retention p-gated) cell for low voltage and energy constrain application is analyzed with respect to power dissipation, area and delay. The analyzed design of 9T SRAM cell with MTCMOS technique has been proposed. Designed circuits are simulated in Microwind 3.1 VLSI CAD Tool in 90 and 65nm CMOS technology. Keywords: CMOS, 6T SRAM cell, 8T SRAM cell, 9T SRAM cell, MTCMOS, Low Power Consumption. I. Introduction Development of digital Integrated Circuits is challenged by high power consumption and greater threshold leakages. Higher clock speed combination with greater integration functionality and smaller process geometries contributed to significant growth in power density. Scaling improves functionality and density of transistors on a chip. Scaling helps to increase operation speed and performance of IC designs. As voltages scale down with geometries, Vth- threshold voltages must also decrease to gain the performance advantages of new technology, but leakage current increases exponentially. Low power and high-stability have been the main issues of SRAM designs as the demand of the portable electronic market constantly urges for less power-hungry architectures [1]. Many techniques have been introduced to fulfill this requirement such as scaling the supply voltage, using Multi threshold CMOS process to minimize the leakage, dividing the SRAM macro into multiple sub-macros to enhance its stability and to reduce dynamic power. The second challenge in designing a robust SRAM is to ensure a reasonable noise margin, which is normally measured by the Static Noise Margin (SNM).[2]. According to, these design factors degrade when threshold voltage variation increases and are also linearly dependent on the reduction of the supply voltage. As a result, it is extremely difficult to maintain the cell stability as technology enters less than 100 nm regime. Several more-than-6T SRAM cell designs are given in [3], to improve the stability and power dissipation. In these papers separate Read and Write ports are employed and hence the cell’s SNM can be optimized. Sub threshold leakage current is much larger than the other leakage current and is calculated by using the following equation. IDS=K (1-℮V DS/V T) ℮ (VGS-VT +αVDS/αVT). Technique used for minimization of static and dynamic power dissipations in SRAM cell during write/read operation is MTCMOS. MTCMOS technology provides low leakage and high performance operation by utilizing high speed, low threshold voltage (Vthl) transistors during active mode and low leakage, high threshold voltage (VthH) transistors during sleep mode. This technology, also called as power gating, the wake up latency and power plane integrity are key issues. Several researchers have proposed methods for optimal sizing of sleep transistors in a given circuit to meet a performance constraint. In this paper a novel 9T MTCMOS SRAM cell is proposed.[8]. A charge recycling technique is used to minimize the leakage currents and static energy dissipation during the mode transitions. The total power dissipations at different temperatures and supply voltages for assessing stability at different pullup ratios have been determined for the proposed SRAM cell and compared with those of the other existing SRAM cells.
  • 2. A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption DOI: 10.9790/4200-05114249 www.iosrjournals.org 43 | Page This paper mainly focuses on reduction of power consumption at higher performance with MTCMOS technique. Section-II describes the design of conventional 1-bit SRAM cells (existing cells)[9]. Section-III describes the design of Proposed MTCMOS SRAM cell. Section-IV presents the simulation results of proposed SRAM cell. Section-V concludes this paper. II. Conventional SRAM A. Conventional 6T SRAM cell: Fig. 1 shows the circuit diagram of a conventional SRAM cell. Word line (WL) is used for enabling the access transistors T2 and T5 for write operations [3]. Bit lines BL and BL bar are used to store the data and its compliment. For writing operation, one bit line is high and the other bit line is low. For writing “0”, BL is low and BL bar is high. When the word line (WL) is asserted high, transistors T2 and T5 are ON and any charge stored in the BL goes through T2-T3 path to ground. Due to zero value on Q bar, the transistor T4 is ON and T6 is OFF. So the charge is stored at Q bar line. Similarly in the write “1” operation, BL is high and BL bar is low, due to this T6 is ON and the charge stored on Q bar is discharged through the T5-T6 path and due to this low value on the Q bar , T1 is ON and T3 is OFF, so the charge is stored on the Q. Fig 1. Conventional 6T SRAM Cell. Before the read operation of “1” at Q (for example) begins, BL and BL bar are pre-charged to as high as Vdd. When the WL is selected, the access transistors T2 and T5 are turned ON. Because of the pull-up transistor T1 ON and pull down transistor T3 OFF, voltage of BL will be nearly Vdd. On the other side, current will flow from the pre-charged BL bar to ground, thus discharging BL bar line through T5-T6 path to ground; T4 being OFF. Thus, a differential voltage develops between BL and BL bar lines. This small potential difference between the bit lines is sensed and amplified by the sense amplifier at the data output B. Conventional 8T SRAM cell: 8T SRAM cell [4] is shown in Figure 2. This cell uses the same 6T SRAM structure for the writing operation. For reading, it uses a separate bit line, RBL with RWL as its control signal. During writing, the PMOS and NMOS transistors of the inverters can be maintained at the minimum width as the read operation is separated. The RBL is read according to the value stored at the storage nodes when RWL is high. Fig2. Conventional 8T SRAM Cell.
  • 3. A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption DOI: 10.9790/4200-05114249 www.iosrjournals.org 44 | Page C. Conventional 9T SRAM cell: The 9T SRAM [8] is shown in Fig. 3. “Write” occurs just as in the 6T SRAM cell. “Read” occurs separately through N5, N6 and N7 controlled by the Read Signal RD going high. This design has the problem of the high bit line capacitance with more pass transistors on the bit line and it can be minimized by placing sleep transistors on bit line which was explained in section- III. Fig 3. Conventional 9T SRAM Cell. III. Proposed MTCMOS SRAM Cell Low-power and high performance design requirements of modern VLSI technology can be achieved by using MTCMOS technology. This technique uses low, normal and high threshold voltage transistors in designing a CMOS circuit. Supply and threshold voltages are reduced with the scaling of CMOS technologies. Lowering of threshold voltages leads to an exponential increase in the sub threshold leakage current. The low-threshold (Vtl) transistors which have high performance are used to reduce the propagation delay in the critical path. High- threshold (Vth) transistors which have less power consumption are used to reduce the power consumption in the shortest path. The multi threshold CMOS technology has two main parts. First, “active” and “sleep” operational modes are associated with MTCMOS technology, for efficient power management. Second, two different threshold voltages are used for N channel and P channel MOSFET in a single chip. These apply on between the low threshold voltage (low-Vt) gates from the power supply and the ground line via cut-off high threshold voltage (high-Vt) sleep transistors is also known as “power gating”. Schematic of power gating technique is shown in below Fig. 4. And transistor level circuit is shown in Fig. 5 [8]. Fig 4. MTCMOS Technique.
  • 4. A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption DOI: 10.9790/4200-05114249 www.iosrjournals.org 45 | Page Operation of 9T MTCMOS SRAM cell is same as conventional 9T SRAM cell as mentioned in section II – C, there it is having large power dissipation because of high bit line capacitance due to more switching transitions at bit line node and it can be reduced by placing high threshold transistors (pmos & nmos) between supply and ground, so that the unwanted and more transitions can be decreased by controlling switching transistors (Vth) which are placed between power supply and ground.[5],[6]. Fig.5 Proposed MTCMOS SRAM Cell. IV. Simulation Results In this section, the total write power dissipations at different voltage levels and static noise margins (SNM) are calculated and the simulation results are compared to those of other SRAM cells. Analog and schematic simulations have been done in 65nm environment with the help of Microwind 3.1 by using BSimM4 model.[10]. A. Power Dissipation Analysis: Table I shows the comparison of total power dissipations (static power dissipation plus dynamic power dissipation together) of existing SRAM cells and the proposed SRAM cell for write operations in 90nm and Table II shows results in 65nm. The proposed cell dissipates lesser power than the other existing SRAM cells even at higher temperatures. Fig.6 Layout of Proposed MTCMOS SRAM Cell.
  • 5. A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption DOI: 10.9790/4200-05114249 www.iosrjournals.org 46 | Page Fig7. Waveform of Proposed 9T MTCMOS SRAM Cell (V vs T). Fig.8 Waveform Of Proposed 9T MTCMOS SRAM Cell (V Vs I). Fig9. Id/Vd Characteristics Of Nmos Devices In Low Leakage Mode At Room Temperature.
  • 6. A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption DOI: 10.9790/4200-05114249 www.iosrjournals.org 47 | Page Fig10. Id/Vd Characteristics Of Pmos Devices In Low Leakage Mode At Room Temperature. Fig11. Id/Vd Characteristics Of Nmos Devices In High Speed Mode At Room Temperature. Fig12. Id/Vd Characteristics Of Pmos Devices In High Speed Mode At Room Temperature.
  • 7. A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption DOI: 10.9790/4200-05114249 www.iosrjournals.org 48 | Page Table I. Simulation Results of Different Types of SRAM Cells in 90NM/27o C TECHNIQUES AREA (µm2 ) POWER in (µw) DELAY in (ps) PDP VALUE (µw X ns) Conventional 6T SRAM CELL 180 254 300 76.20 Conventional 8T SRAM CELL 210 256 340 87.04 Conventional 9T SRAM CELL 220 263 330 86.79 Proposed MTCMOS SRAM CELL 360 88.22 475 41.90 Table II. Simulation Results of Different Types of SRAM Cells in 65NM/27o C TECHNIQUES AREA (µm2 ) POWER in (µw) DELAY in (ps) PDP VALUE (µw X ns) Conventional 6T SRAM CELL 112 41.47 228 9.455 Conventional 8T SRAM CELL 128 41.58 262 10.89 Conventional 9T SRAM CELL 136 42.88 240 10.29 Proposed MTCMOS SRAM CELL 252 5.876 370 2.174 Table III. Transistors Required For Implementing SRAM Cell No.of MOS Transistors Pmos Nmos Total Conventional 6T SRAM CELL 3 5 8 Conventional 8T SRAM CELL 3 7 10 Conventional 9T SRAM CELL 3 8 11 9T MTCMOS SRAM CELL 5 10 15 Table IV. Power Consumption of 9T MTCMOS SRAM Cell at Various Voltage Levels in 65nm at 27o C 9T MTCMOS SRAM CELL POWER in (µw) 0.7 V 5.876 1.2 V 218.0 1.8 V 749.0 2.5 V 1584.0 3.3 V 2635.0 5.0 V 5199.0 B. Noise Analysis: Here Output of 9T MTCMOS SRAM cell is analysed by adding noise at input. Table.V gives the analysis report between power consumption and noise at various noise levels in 65 nm technology. Table V. Noise vs Power consumption analysis of 9T MTCMOS SRAM cell in 65nm technology Noise Level in (mv) POWER in (μw) at VDD=0.7v 10 5.876 20 5.878 30 5.888 40 5.921 50 6.031 60 6.253 70 6.707 80 7.341 90 8.222 100 9.377 From the above table V it is observed that after 50mv of noise input, output starts affecting with noise. Hence the noise margin for the proposed SRAM cell is 50mv. C. Graphical Analysis in 90 nm technology:
  • 8. A Novel Low Power Energy Efficient SRAM Cell with Reduced Power Consumption DOI: 10.9790/4200-05114249 www.iosrjournals.org 49 | Page D. .Graphical Analysis in 65 nm technology: V. Conclusion In this paper, reduction in power consumption which leads to reduction in leakage current and power dissipation as well as Power Delay product is analyzed for conventional and modified 1-bit SRAM cell using Microwind / DSCH tool in 90nm and 65nm technologies. It is found that total power consumption of proposed design with MTCMOS is reduced when compared to other SRAM cells. Hence the proposed SRAM cell with MTCMOS is Energy Efficient as it`s PDP value is less when compared to other conventional designs. Future work is carrying out in designing 32Kb RAM with the proposed model. References [1]. CMOS Digital Integrated Circuits Analysis And Design Third Edition2003, By Sung-Mo Kang, Yusuf Leblebici. [2]. Grossar, M. Stucchi, K. Maex, W. Dehaene, “Read Stability And Write-Ability Analysis Of SRAM Cells For Nanometer Technologies,” IEEE Journal Of Solid-State Circuits, Vol. 41, No. 11, Pp.2577-2588, Nov. 2006. [3]. Gupta And M. Anis, “Statistical Design Of The 6T SRAM Bit Cell,” IEEE Trans. Circuits Syst.- I, Vol. 57, No. 1, Pp. 93–104, Mar. 2010. [4]. R. E. Aly And M. A. Bayoumi, “Low-Power Cache Design Using 7T SRAM Cell,” IEEE Trans. Circuits Syst.- II, Vol. 54, No. 4, Pp. 318– 322, Apr. 2007. [5]. K. Kim, H. Mahmoodi, K. Roy, “A Low-Power SRAM Using Bit Line Charge Recycling”, IEEE Journal Of Solid-State Circuits, Vo1. 43, No. 2, Pp. 446-459, Feb. 2008. [6]. M. Anis, S. Areibi, M. Mahmoud, And M. Elmasry, “Dynamic And Leakage Power Reduction In MTCMOS Circuits Using An Automated Efficient Gate Clustering Technique,” Proc. DAC, Pp. 480-485, 2002. [7]. Chen, D. Sylvester, D. Blaauw, T. Mudge, “Yield-Driven Near- Threshold SRAM Design”, IEEE Transactions On Very Large Scale Integration Systems, Vol. 18, No. 11, Pp. 1590-1598, Nov. 2010. [8]. Z. Liu, V. Kursun, “Characterization Of A Novel Nine-Transistor SRAM Cell,” IEEE Transactions On Very Large Scale Integration Systems, Vol. 16, No. 4, Pp. 488-492, April 2008. [9]. P. Upadhyay, Nidhi Agarwal, R. Kar, D. Mandal,S. P. Ghoshal, “Power And Stability Analysis Of A Proposed 12T MTCMOS SRAM Cell For Low Power Devices” Fourth International Conference On Advanced Computing And Communication Technologies 2014, IEEE - DOI 10.1109/ACCT.2014.18. [10]. Microwind And Dsch V3.1 – Lite User’s Manual – Etienne Sicard.