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Nanoelectronics

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Nanoelectronics

  1. 1. Nano ElectronicsByBharanidharan GJesuraj J
  2. 2. IntroductionBasics of SAMsCharacterization of SAMsLithographyConduction in SAMsSAM DevicesConclusion
  3. 3. Current trends in nanoelectronicsThe development of new applications. The miniaturization of existing ones.This gives the idea to emerge a new fieldMolecular Electronics fulfill the need.
  4. 4. IntroductionBasics of SAMsCharacterization of SAMsLithographyConduction in SAMsSAM DevicesConclusion
  5. 5. A self assembled monolayer (SAM) is anorganized layer of amphiphilic molecules .The interesting fact isthese layers are waterloving and fat loving.This property of SAMmakes it to beimplemented in medicalfield.
  6. 6. They assemble themselves on a substratenamely silicon.They have three parts ,they are head group ,alkyl chain ,surface group. Head group gets adsorbedon substrate. Alkyl chain links headgroup and the surface group.Surface group forms a layer to attach metalgroup.
  7. 7. IntroductionBasics of SAMsCharacterization of SAMsLithographyConduction in SAMsSAM DevicesConclusion
  8. 8. Processes of the SAM formation on a native silicon oxidesurface of Si is followed by thorough rinsing in DI water thendrying under nitrogen.
  9. 9. IntroductionBasics of SAMsCharacterization of SAMsLithographyConduction in SAMsSAM DevicesConclusion
  10. 10. 1. A “stamp” with desired pattern is made from an elastomeric material called polydimethylsiloxane (PDMS) . 2. Deposition of Au (20–200 nmthickness) .3. The stamping of the monolayer.4. The removal of stamp leadsto the transfer of Au patterns onSAM .
  11. 11. IntroductionBasics of SAMsCharacterization of SAMsLithographyConduction in SAMsSAM DevicesConclusion
  12. 12. Electronic conduction in SAMsConduction takes place between HOMO andLOMO layer.Conductions are mainly due to Tunneling effect.
  13. 13. IntroductionBasics of SAMsCharacterization of SAMsLithographyConduction in SAMsSAM DevicesConclusion
  14. 14. Molecular rectifierMolecular transistor
  15. 15. AdvantagesThe size is few nano meters so consequently the size of devicereduces.No waste of energy due to heat dissipation .Thus efficiency of the system increases and the operation isprecise.
  16. 16. DisadvantagesThe lithography technique is minutein nano scale so difficult tomanufacture.Should be handled carefully.

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