A Leading Provider of Smart, Connected and Secure Embedded Control Solutions
SiC Power Solutions
Adopt SiC With Ease, Speed and Confidence
28/03/2023
Webinar Embarcados
Rodrigo Britto

Expanding Microchip Solutions Through Acquisitions
2
2009 2010 2011 2012 2013 2014 2015 2016 2018 2020
Hampshire
Low-Power
Embedded
Wi-Fi®
Motor Drive
Products
LSS
High-Speed
ADCs
Non-volatile Memory IP
High-Voltage Analog & Mixed-
Signal Products
Analog & mixed-signal, timing,
power management
FPGAs, SoCs, ASICS,
Power, PoE, Timing and
Storage systems
Assembly & Test
Capacity Expansion
3D Gesture Capture
& Proximity Detect
Equalizer & Coaxial
Transceiver Products
Bluetooth®
Low Energy
Microcontrollers,
Touch Solutions
2008
Bluetooth® and
Embedded Wi-Fi®
Development
Tools Computer
Touch Screen
Controllers
Security & Life
Safety ASICs
MOST®, USB & Ethernet
Wireless Audio, PC Controllers
2019
2017
High-Level
Synthesis Tool
for FPGAs
Digital Programable
Gate Drivers
Power-efficient
inferencing
Precision-timing
hardware for
industrial networks
Microchip Confidential

Microchip Corporate Overview
• Headquartered in Chandler, AZ
• ~ $6 Billion revenue run rate
• ~19,000 employees
• Key markets in Industrial, Automotive, Aerospace, and Defense
3
MCUs Mixed Signal Memory
Analog Interface Switches &
Controllers
High-Rel
Discrete
Power
Management
A&D
12%
Computing
18%
Communications
14%
Consumer
13%
Automotive
15%
Industrial
28%
Enterprise
Storage FPGA
COMBINED CAPABILITIES
Microchip Microsemi

27 March 2023 Microchip Technology Inc. and its subsidiaries
©
Higher Levels of
Power Fidelity are Required
The Electrification of Everything
4

27 March 2023 Microchip Technology Inc. and its subsidiaries
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0
2.000
4.000
6.000
8.000
10.000
12.000
14.000
16.000
2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030
Power supplies UPS Hybrid and electric vehicles Commercial vehicles
HEV charging infrastructure industrial applications PV inverters Traction
Military and aerospace Other applications
© 2022 Omdia
Revenue
($
millions)
Microchip in the SiC Power Market
Consumer EV
Microchip major supplier to OEM/Tier 1
Mil/Aero
Leading supplier to Military and Aerospace
EV Charging Infrastructure
Complete SiC Solutions to Streamline Adoption
Power Supplies and UPS
Diverse SiC product portfolio to satisfy
mainstream and niche power supply market
Commercial EV and Traction
Delivering intelligent SiC to extend range
5
Source: Omdia – 2022 Mid Case Estimate

27 March 2023 Microchip Technology Inc. and its subsidiaries
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0
1.000
2.000
3.000
4.000
2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030
Power supplies UPS Commercial vehicles
HEV charging infrastructure industrial applications PV inverters
Traction Military and aerospace Other applications
© 2022 Omdia
Revenue
($
millions)
Microchip in the SiC Power Market (non-EV)
Consumer EV
Microchip major supplier to OEM/Tier 1
Mil/Aero
Leading supplier to Military and Aerospace
EV Charging Infrastructure
Complete SiC Solutions to Streamline Adoption
Power Supplies and UPS
Diverse SiC product portfolio to satisfy
mainstream and niche power supply market
6
Source: Omdia – 2022 Mid Case Estimate
Commercial EV and Traction
Delivering intelligent SiC to extend range

Microchip SiC Target Markets
SiC Power Applications
Market Segment
DC Fast Charging, E-fuse, On-Board Charger, On-Board DC-DC, Traction Drive
Automotive
Charging, Traction Drive, Auxiliary Power Unit
Transportation
Semi-cap, Induction Heating, Welding/Plasma Cutting, APU, UPS, Robotics
Industrial
Solar Inverters (micro, string, central), Auxiliary Power Supply, Energy Storage System
Renewables/Grid
Flight Actuators, Propulsion Drive, E-Fuse, Power Distribution, Traction Drive
Mil/Aero
PSU PFC, PSU DC-DC, Backup Power UPS, E-Fuse, Telecom/5G Power Supplies
Data Center

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Microchip SiC Timeline
8
2006 2008 2010 2012 2014 2016 2018 2020 2022 2024
Internal SiC Fab
in Bend, OR
2004
Gen 1 SiC MOSFETs
Released
(650V & 1200V)
APT Acquired by
Microsemi
SiC Process and
Technology
Transfer for
SIT/JFET
Dual Fabs
(Internal & External)
Microsemi
Acquired by
Microchip
SiC Modules
Released
AEC Release
of SiC MOSFETs
and SBDs
3.3 kV SiC
MOSFETs and
SBDs Released
Process Transfer,
Expansion to Fab 5
Gen 2 SiC
Release
(700V – 1700V)
AgileSwitch®
Acquisition
PowerSicel acquired
by Advanced Power
Technology (APT)
First SiC
Device
Shipped
(Q4/2003)
Gen 2 SiC SBDs
Released
(700V – 1700V)

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Key Differentiation
Packaging
Product Family
Unrivaled Ruggedness and Performance
Die
Widest Breadth
Discretes
Lowest Inductance
Standard and Custom-Tailored
Modules
Fastest to Market
Highest Efficiency
Gate Drivers
SiC Portfolio: 700V – 3.3 kV
9

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Adopt SiC With Ease, Speed and Confidence
SiC Die – Unrivaled Ruggedness and Performance
10
Portfolio
Packaging
Product Family
• 700V – 3.3 kV, 15 mΩ – 750 mΩ SiC MOSFETs
• 700V – 3.3 kV, 10A – 100A SiC Schottky Barrier Diodes (SBDs)
Die
• Fastest to Market
• Minimize system
development time
• Earlier and more revenue
• Accelerate your innovation
process
• Lowest System Cost
• Device redundancy not
needed
• Focus on next generation vs
redesign
• No supply interruption of
production
• Lowest Risk
• Highest reliability and
system lifetime
• Lowest component count
• Multiple epi wafer sources
and dual fabs

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Unrivaled Ruggedness and Reliability
• Rock-solid threshold voltage
• Lifetimes >100 years
• Degradation-free
• Eliminate freewheeling Schottky
• Stable performance after 100k pulses
• Optimized cost and efficiency
• Safely ride through unexpected system
transients
Gate Oxide
Integrity
Robust
Body Diode
Avalanche
Rugged
“IGBT-like”
Short Circuit
Performance
11

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Ruggedness | Gate Oxide Stability
12
Operate routinely &
reliably
Meet (exceed) desired
service lifetime
Application
Benefits
Stress: VGS = -8V, 1000 hrs at TA = 175°C | Change: -0.02V Stress: VGS = 20V, 1000 hrs at TA = 175°C | Change: +0.06V
Vth measurements before and after 1000 hours of High-Temperature Gate Bias (HTGB) stress
show negligible shift

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Ruggedness | Gate Oxide Lifetime
13
i. Oxide failure (breakdown) accelerated with
temperature and electric field across the oxide
ii. Failure modes extracted from Weibull plots
iii. Arrhenius equation used to predict oxide lifetime
Data from production-grade 1200V, 40 mΩ SiC MOSFETs
Oxide predicted to last more than 100 years
at recommended VGS and TJ = 175°C
Operate routinely &
reliably
Meet (exceed) desired
service lifetime
Survive electrical
transients
Application
Benefits

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Ruggedness | Body Diode Stability
14
Operate routinely &
reliably
Meet (exceed) desired
service lifetime
i. SiC MOSFET body diodes stressed with a constant
forward current
ii. Body diode I-V curves and RDS(on) measurements
made before and after stress
Data* from commercially available 1200V, 80 mΩ SiC MOSFETs
*Courtesy: A. Agarwal and M. Kang, Ohio State University
No degradation observed in Microchip body diodes
Also, lower component cost by using body diode
and eliminating freewheeling Schottky diode
Application
Benefits
0
5
10
15
20
25
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Ids
(A)
Pre stress
Post stress after 20 Hr
Post stress after 50 Hr
Post stress after 100 Hr
Post stress after 168 Hr
M. Kang et al, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and
Applications (WiPDA), 2019, pp. 416-419, doi: 10.1109/WiPDA46397.2019.8998940.

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Ruggedness | Avalanche / Repetitive UIS
15
i. Measures the MOSFET’s ability to repetitively
sustain an avalanche current being switched off
from an unclamped inductive load (RUIS)
ii. Cells are not enhanced (MOSFET is OFF); peak
current increases rapidly until VDS = VBR; avalanche
current likely to crowd around die edge
Data from commercially available 1200V, 40 mΩ MOSFETs
Microchip devices exhibit excellent avalanche ruggedness
and parametric stability following 100k pulses of RUIS
Safely ride through harmful electrical transients
Application
Benefits
Microchip
Post RUIS
Pre-RUIS
(3 RUIS failures) (1 RUIS failure)
Post RUIS
Pre-RUIS

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Ruggedness | Short Circuit Capability
16
Safely ride through harmful electrical transients
i. Short circuit emulates the application condition
of shorting the MOSFET’s drain-source across the
DC link
ii. Cells are enhanced (MOSFET is ON); peak current
intended to distribute uniformly across die
Data from production-grade 700V, 35 mΩ SiC MOSFETs
10 µs
comparable
to IGBTs
Microchip
Designed to survive short circuit events, even at
higher DC voltages (with adequate gate driver)
Application
Benefits

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Ruggedness | Terrestrial Neutron Susceptibility
• Neutrons can damage or degrade system performance at sea level or in higher elevations
• Application benefit: Using SiC provides higher immunity to terrestrial radiation and lowers FIT rate
across low to high elevations
Microchip
17
Microchip SiC MOSFETs perform well against SiC
competition regarding neutron irradiation
Microchip
SiC MOSFETs have 10X lower FIT rate than
comparable Si IGBTs @ rated voltage

27 March 2023 Microchip Technology Inc. and its subsidiaries
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0,8
1,0
1,2
1,4
1,6
1,8
2,0
0 25 50 75 100 125 150 175
R
DS(on)
,
Drain-to-Source
On
Resistance
(Normalized)
TJ, Junction Temperature (°C)
Microchip - Planar
Competitor A - Planar
Competitor B - Planar
Competitor C - Trench
Competitor D - Trench
Ruggedness | RDS(on) vs. Junction Temperature
18
Lower change in RDS(on) curve means
higher stability over temperature
Microchip
1200V
Microchip
1200V

Comparison
SiC vs Si
Microsemi
APTMC120AM20CT1AG
Microsemi
APTGLQ300A120G
Parameter
SiC MOSFET
Trench4 Fast IGBT
Semiconductor type
~3.5 x lower
143 A/1200 V
500 A/1200 V
Ratings @ Tc=25°C
~3.0 x smaller
SP1 – 52x41 mm
SP6 – 108x62 mm
Package type
-
130 A
130 A
Current @ 30 kHz
Tc=75°C, D=50%, V=600 V
~2.0 x higher
115 A
60 A
Current @ 50 kHz
Tc=75°C, D=50%, V=600 V
~5.0 x lower
3.4 mJ
16.0 mJ
Eon+Eoff @ 100 A
Tj=150°C, V=600 V
SiC
MOSFET
Si IGBT
0
50
100
150
200
40 60 80 100 120 140 160
Frequency
(kHz)
ID, Drain Current (A)
Operating Frequency vs Drain Current
VBUS=600V
D=50%
TJ=150°C
TC=75°C
MORE POWER @
HIGHER SWITCHING FREQUENCY
in
SMALLER VOLUME
SiC Power Module Allows Higher Power-Density

SiC Reliability in High-Power Switching
• Operates at higher efficiency across high junction temperature range (Tj = 175 oC) for improved cooling
• Higher SiC power density vs. Si enables smaller magnetics, transformers, and DC bus capacitors, and less cooling for
more compact form factor
• Lowers overall “system” costs
• AEC-Q101 qualification in progress
SiC is the perfect
technology to address
high frequency and high
power density
applications
Lower Power Losses
Higher frequency cap.
Higher junction temp.
Easier cooling
Downsized system
Higher Reliability

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Portfolio
Packaging
Product Family
• 700V – 3.3 kV, 15 mΩ – 750 mΩ SiC MOSFETs
• 700V – 3.3 kV, 10A – 100A SiC Schottky Barrier Diodes (SBDs)
Discretes
Adopt SiC With Ease, Speed and Confidence
SiC Discretes – Widest Breadth
21
• Fastest to Market
• Minimize system
development time
• Earlier and more revenue
• Accelerate your innovation
process
• Lowest System Cost
• Device redundancy not
needed
• Focus on next generation vs
redesign
• No supply interruption of
production
• Lowest Risk
• Highest reliability and
system lifetime
• Lowest component count
• Multiple epi wafer sources
and dual fabs

27 March 2023 Microchip Technology Inc. and its subsidiaries
©
Widest Breadth
700V – 3.3 kV SiC Discretes
22
SiC MOSFETs
• 700V – 3.3 kV
• 15 mΩ – 750 mΩ
SiC Schottky Barrier Diodes
• 700V – 3.3 kV
• 10A – 100A
Auto-Qualified Parts
• AEC-Q101

27 March 2023 Microchip Technology Inc. and its subsidiaries
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3.3 kV SiC MOSFETs and Diodes
Industry-leading 3.3 kV SiC MOSFETs and SBDs
23
Extends the industry’s broadest line of SiC power solutions
• 3.3 kV SiC MOSFETs
25 mΩ, 104A – Lowest on-resistance
80 mΩ, 43A
400 mΩ, 8A
• 3.3 kV SiC Schottky Barrier Diodes (SBDs)
90A – Highest current-rated
30A

27 March 2023 Microchip Technology Inc. and its subsidiaries
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3.3 kV SiC MOSFETs and Diodes
What Problem Are We Solving?
24
3.3 kV Silicon IGBTs are limited in performance
(Slow with high switching losses)
Eliminate design compromises, reduce design
complexity and lower system costs with 3.3 kV SiC
Take advantage of SiC technology: reduce size, weight
and losses with higher switching frequency capability
Limited suppliers of 3.3 kV SiC products
SiC
MOSFET
Si
IGBT

27 March 2023 Microchip Technology Inc. and its subsidiaries
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3.3 kV SiC MOSFETs and Diodes
Target Applications
• Rail Traction Power Units (TPU) and Auxiliary Power Units (APU)
• SemiCap (Semiconductor Capital equipment)
• Medical imaging power supplies
• Renewable energy/grid
• Industrial motor drives
• Aerospace and defense power distribution
25

27 March 2023 Microchip Technology Inc. and its subsidiaries
©
Adopt SiC With Ease, Speed and Confidence
SiC Modules – Lowest Inductance, Standard and Custom-Tailored
26
Portfolio
Packaging
Product Family
• 700V – 1700V, 1.5 mΩ – 40 mΩ SiC MOSFETs
• 700V – 1700V, 50A – 600A SiC Schottky Barrier Diodes (SBDs)
• Baseless Power Modules
SiC Modules
• Lowest System Cost
• Device redundancy not
needed
• Focus on next generation vs
redesign
• No supply interruption of
production
• Lowest Risk
• Highest reliability and
system lifetime
• Maximize performance
• Multiple epi wafer sources
and dual fabs
• Fastest to Market
• Minimize system
development time
• Earlier and more revenue
• Accelerate your innovation
process

27 March 2023 Microchip Technology Inc. and its subsidiaries
©
Lowest Inductance, Standard and Custom-Tailored
700V – 1.7 kV SiC Modules
27
SiC MOSFETs
• 700V – 1.7 kV
• 1.5 mΩ – 40 mΩ
• Baseless Power Modules
SiC Schottky Barrier Diodes
• 700V – 1.7 kV
• 50A – 600A

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Lowest Inductance
SP6LI Power Module – Enabling Higher Power Density and Efficiency
• Extremely low stray inductance, < 2.9 nanohenry
• Dedicated to SiC MOSFET technology
• High switching frequency
• High efficiency
• High current
28

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Standard and Custom-Tailored
Maximize System Performance
Base Plate
Improve the heat transfer to the heatsink
• Cu material for good thermal transfer
• AlSiC for improved reliability
Power Semiconductor Die
IGBT, MOSFET, Diode, SiC
• Soldered to the substrates
• Connected by ultrasonic Al wire bonds
Substrates
Al2O3, AlN, Si3N4
• Provide isolation
• Good heat transfer to the base plate
Terminals
Screw on or Solder pins
• Power and signal connections
• Minimum parasitic resistance and inductance
Package
Standard or Custom
• Environmental protection
• Mechanical robustness
Internal Printed Circuit Board
Not available in all modules
• Used to route gate signals tracks to small signal terminals
• Used to mount gate circuit and protection in case of
intelligent power module
29

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Baseless Power Modules
Reduce Weight by up to 40%
• Low weight, low profile, small package
• Rugged baseless products adapted to
A&D conditions/requirements
• Various electrical topologies available
• Full aerospace custom versions available on demand
(managed under AS9100 quality standards)
30

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Adopt SiC With Ease, Speed and Confidence
SiC Gate Drivers – Fastest to Market, Highest Efficiency
31
Portfolio
Packaging
Product Family
• 700V – 1700V Gate Drivers
• Augmented Switching™ (Patented)
• Development Kits
Gate Drivers
• Fastest to Market
• Reduces design and
evaluation time
• Earlier and more revenue
• Accelerate your innovation
process
• Lowest System Cost
• Higher efficiency
• Reduces design and
evaluation time
• No supply interruption of
production
• Lowest Risk
• Increased power system
reliability
• Reduces design and
evaluation time
• Runs cooler

27 March 2023 Microchip Technology Inc. and its subsidiaries
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SiC Runs Faster Than Silicon
But Often With Nasty Secondary Effects
32
• Noise/EMI
• Short Circuit
• Overvoltage
• Overheating
A digital solution, with Augmented Switching™ technology, is required to address these impacts
With Augmented Switching
Without Augmented
Switching

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Unleash the Full Capability of Silicon Carbide
Quickly Optimize with Configurable Digital Control
2ASC-12A1HP
2ASC-12A2HP
33

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Augmented Switching™ Technology
34

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Connect and Configure
Saves up to Six Months of Development for New Designs
35
Driver Core
Module Adapter Board
SiC Module
Plug-and-Play Board
SiC Module
Intelligent Configuration Tool (ICT)
PICKit™ 4 Programming Kit

27 March 2023 Microchip Technology Inc. and its subsidiaries
©
Intelligent Configuration Tool (ICT) Version 2.0
Quick Configuring and Application Tailoring
36
Graphical Editor
Graphical Editor
Temperature Curves
Temperature Curves

27 March 2023 Microchip Technology Inc. and its subsidiaries
©
Module Adapter Board (MAB) Solutions
37
• Turns cores into plug-and-play drivers
• Design files available for download
• Dedicated design and support team
• Custom adapter boards development (NRE)
Typical Module Image
For Module Type(s)
MAB Image
Rated
Voltage
Module Adapter
Board P/N
62 mm, D3, SP6
1200V
62CA1
1700V
62CA4
SP6LI
1200V
SP6CA1
1700V
SP6CA3
Rohm E/G Type
1200V
EDCA1
XMCA1
1200V
XMCA1

27 March 2023 Microchip Technology Inc. and its subsidiaries
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Development Kits: ASDAK+ and ASDAK
Save up to Six Months of Development in New Designs
38
ASDAK Kits available without power module, compatible with other module packages
• SP6LI low-inductance SiC power module
• Module adapter board
• Gate driver core
• Intelligent Configuration Tool (ICT)
• PICKit™ 4 programming kit
• Cabling
20 kW and higher
Power
Conversion
Using SiC MOSFET modules
(or IGBTs, and considering SiC)
Switch
Types
600V – 1.7 kV
Switch
Voltage
Ranges
• EVs, chargers, trains, trams, trolleys,
busses, heavy duty vehicles
• Energy storage, microgrid
• Induction heating (<200 kHz fsw)
• Wind, solar, motor drives (with
above criteria)
End
Applications
• SP6LI, D3, SP6
• 62mm, XM3, EDCA
Modules
Target Applications
ASDAK+ Includes:

27 March 2023 Microchip Technology Inc. and its subsidiaries
©
SiC Design Support
Hardware Tools
39
• 30 kW 3-phase Vienna PFC Development/EvalBoard
• 30 kW Dual PSFB DC-DC Development/EvalBoard
• 150 kVA 3-phase SiC Power Stack Development/EvalBoard
• 400/800VDC, 30A Solid State Circuit Breaker Development/EvalBoard
• 60W Auxiliary Power Supply with 250 – 1000VDC input Reference Design
• Half bridge ASD2 gate driver and SiC MOSFETs in TO-247 Development/EvalBoard
• SP6LI Module Development/EvalBoard
• More available at SiC Design Resources www.microchip.com/SiC

SiC Design Support
Software Tools
40
MPLAB® Mindi™ Analog Simulator
• Microchip’s free circuit simulation software available for
download at www.microchip.com/Mindi
• Uses SIMetrix and SIMPLIS simulation environment for SPICE
and piecewise-linear modeling, respectively
Vienna PFC PLECS Model for electrical and thermal modeling
SiC MOSFET and SBD SPICE Models (PLECs models also available)
• SiC MOSFET and Schottky Barrier Diode models available at www.microchip.com/SiC
• Two levels of simulation categories:

27 March 2023 Microchip Technology Inc. and its subsidiaries
©
Adopt SiC With Ease, Speed and Confidence
• Unrivaled ruggedness and performance
• Best-in-class avalanche ruggedness, short circuit capability and neutron susceptibility
• Oxide lifetime in excess of 100 years and a stable body diode
• Qualified and secured long-term substrate and epi supply
• Multiple vendors that exceed high-side demand
• Not reliant on competitor substrate/epi material
• Dual fab strategy
• Protecting the supply chain from a natural disaster or major line yield issue
• Short lead times
• 20 - 30 weeks typically
• Stability of Microchip
• 125+ consecutive quarters of profitability
• 30+ years of power semiconductor expertise
• 20+ years of SiC expertise
• No "EOL" practice
41

Contact us at
www.microchip.com/SiC
Adopt SiC With Ease, Speed and Confidence

27 March 2023 Microchip Technology Inc. and its subsidiaries
©
Resources – Microchip SiC Portal | Public
www.microchip.com/SiC
43
Includes
• SiC Die
• SiC Discretes
• SiC Modules
• SiC Gate Drivers
• Featured Products
• SiC Adoption Tools
─ Reference Designs and Evaluation Kits
─ Design Resources
─ Selector Guides
• Support Options

44
Silicon Carbide Challenges
Crystalline purity inferior to Silicon
Wafer cost ~ 35X that of Silicon
Wafers are transparent; equipment handling issues
Requires high temperature implant
Implant anneal at temperatures > 1700C

Obrigado!!!