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Introducing the IXRFD615 RF Driver

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Description
The IXRFD615 is a low-side CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

The IXRFD615 can source and sink 15 Amperes of peak current while producing voltage rise and fall times of less than 5 nanoseconds and minimum pulse widths of 8 nanoseconds. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range.

The IXRFD615 is packaged in a low-inductance surface mount RF package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance.

Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD615 unmatched in performance and value.
Features
Isolated substrate
High isolation voltage (>2500 V)
Excellent thermal transfer
Increased temperature and power cycling capability
High peak output current
Low output impedance
Low quiescent supply current
Low propagation delay
High capacitive load drive capability
Wide operating voltage range
Advantages
Optimized for RF and high speed
Easy to mount, no insulators needed
High power density
RoHS compliant
Applications
Class D and E RF Generators
Multi-MHz Switch Mode Supplies
Pulsed Transformer Drivers
Pulsed Laser Diode Drivers
High Speed Pulse Generators

Published in: Technology
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Introducing the IXRFD615 RF Driver

  1. 1. IXRFD615 RF DRIVER IC
  2. 2. Sales Webinar Welcome  Introductions  Steve Krausse  Gib Bates  Recorded Webinar  Can you hear the Audio?  Can you see the video & presentation?  Chat Function  Questions  Public  Private  sales@ixyscolorado.com  Webinar Comments  Improvements  Problems 2
  3. 3. What We’ll Cover  Product Overview  Features  Advantages  Available Demonstration Boards  Markets  Applications  Price/Availability  Q&A  Technical Review  IXYSRF Drivers  Performance Improvements in the IXRFD615  Use cases & circuit topologies  Class E  Class D  Coming soon! 3
  4. 4. Features  15 A peak sink / source current  Wide operating voltage range  Low output impedance  High capacitive load drive capability  Low propagation delay  Low minimum pulse width  Low quiescent supply current 4  Isolated substrate  Excellent thermal transfer  Increased temperature and power cycling capability
  5. 5. Advantages 5  Optimized for RF and high speed switching  High frequency capabilities far exceed similar gate drivers  Easy to mount, no insulators needed  High power density  RoHS compliant
  6. 6. Demonstration Board 6  Demonstration board part number DVRFD615  Features  Easy to use  Used to construct low-side ground referenced switches  Select from any of our MOSFETs for installation  Availability- Fall 2017
  7. 7. Markets 7  RF power generation  13.56 Mhz  27.12 Mhz  Pulse-to-Pulse high speed switching for diode applications  Thin film deposition  Induction heating  Power conversion
  8. 8. Applications 8  Class D and E RF generators  Multi-MHz switch mode power supplies  Pulsed transformer drivers  Pulsed laser diode drivers  High speed pulse generators
  9. 9. Pricing & Availability  US MSRP $27.84 ea.  US MSRP $696.00/Rail (30 ea.)  Outside the US  Taxes  Tariffs  Import Duties  Shipping/Delivery Costs  Etc. 9  Availability  Current: Stock  Normal: Stock to 8-10 Weeks  Digikey
  10. 10. Technical Overview Speaker: Gib Bates, IXYSRF R&D 10
  11. 11. What’s New? IXRFD630  IXRFD630 replaced DEIC420  Lower output impedance resulted in higher current than previous DEIC420  Larger output stage consumed higher power levels.  Output stage was bonded at 70% to reduced performance closer to DEIC420 levels  IXRFD630 was released in 2012 IXRFD615  IXRFD630’s output stage has been revised using existing mask set  IXRFD615 doesn’t have to replace something existing  The unused portion of the IXRFD630 output stage has been disconnected  Remaining portion has been redistributed over same area so die size is unchanged  Increased output resistance assists dampening of output signal  Power consumption of disconnected portion of output stage is eliminated 11
  12. 12. Technical Results  Output stage is rerated to 15A, sink and source, at 15V supply voltage  Output stage resistance increased approximately 30%  Improved drive signal dampening for less ringing  Rise and fall times remain relatively the same  Significant reduction of power consumption by almost 50%  Runs much cooler than the IXRFD630 12
  13. 13. Technical Review  Industrial, Scientific, Medical (ISM) frequency bands find popular use in RF power generation at frequencies 13.56MHz and 27.12MHz.  Other higher frequency ISM bands exist, but the ability to hard switch MOSFETs is compromised as switching losses start to dominate over Rdson losses and the high efficiency numbers start to suffer.  Higher ISM bands see use of more analog topologies such as class A, A/B, C for example and conversion efficiency is lower. 13
  14. 14. Technical Review  Class E and D switching topologies at the lower ISM band frequencies are typically resonant designs which help boost the power conversion efficiency.  Class E utilizes a single ground referenced MOSFET-Driver pair driving a resonant tank and output matching network.  Class D Half-Bridge utilizes two MOSFET-Driver pairs, one ground referenced, one floating, driving a resonant tank and output matching network.  Class D Full-Bridge utilizes four MOSFET-Driver pairs, two ground referenced, two floating, these are not generally resonant.  Half or Full-Bridge topologies are difficult to implement due to the floating high-side switch with stability issues at high frequency.  Full-Bridge topologies are not typically resonant and operate below 1MHz. 14
  15. 15. Class E Characteristics 15 FET see’s ~3.5 times the supply voltage  Ground referenced MOSFET and driver provide greater stability  MOSFET see x3.5 supply voltage  Class E output power is limited to MOSFET voltage rating
  16. 16. Class D Half-Bridge Characteristics 16  Each MOSFET clamps the other to the supply voltage  Can operate MOSFETs at their full rated voltage  Higher operating voltages are able to produce more power  Requires floating high-side switch  Complicates driving the isolated floating switch  Floating circuitry can cause instability during operation Load current Commutating current
  17. 17. Class D Full-Bridge Characteristics 17  Typically non-resonant  Each MOSFET clamps the other to the supply voltage  Can operate MOSFETs at their full rated voltage  Doubles load voltage  Increased power over half- bridge  Pulls current bi-directionally  Requires two floating high-side switches  Complicates driving the isolated floating switch  Floating circuitry can cause instability during operation Load current
  18. 18. Power Output Comparison 18 Topology Relative Power Topology Pros Cons Class E Example: PRF-1150 1kW Resonant Better stability from ground referenced switch Supply voltage limited to 1/3 of FET voltage rating Class D half-bridge 1.5 to 2kW Resonant Uses full voltage rating of FETs More complex with stability issues Class D full-bridge >2kW Non-resonant Applies twice the voltage to load as compared to half-bridge Further complexity and increased part count
  19. 19. Dual Driver Configuration  IXYSRF currently offers the IXRFD615X2 dual driver using IXRFD630 die  Future offering will include the IXRFD607X2 dual driver using IXRFD615 die  Substrate input and output pins have been split  Both drivers share a common ground by way of the silicon die substrate 19
  20. 20. Isolated Driver Topology  Currently developing isolated drive techniques using dual driver  Uses leakage inductance and FET gate capacitance to form resonant circuit  Pulls bi-directionally, generating both positive and negative drive  Lowers driver power requirements due to resonant circuit 20
  21. 21. Device Characteristics  Matched ON and OFF propagation delays  Low minimum pulse width allows for higher frequency operation  Low thermal impedance allows for high frequency and power operation 21
  22. 22. Q&A 22
  23. 23. Contacting Us 970-493-1901 sales@ixyscolorado.com Visit Us 1609 Oakridge Drive Suite 100 Fort Collins, CO 80525 USA 23

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