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ConfidentialNovember 2008 1
Nordiko Technical Services Limited
500/550 Nest Business Park
Martin Road
Havant
Hampshire PO9...
Confidential 1
Location 50° 51’ 54.67”, 0° 58’ 15.49”
Nordiko Technical Services
Limited
Nest Business Park
500 m2 (5,380 ...
Confidential 2
Introduction
Nordiko Limited
Founded in 1972.
Sputtering - magnetron and RF diode sputtering.
Ion Beam tech...
Ion Beam Deposition
If you are depositing very thin
films the IBD has been tested
to have better uniformity, run to
run st...
The I-Octave is considered a lab
research tool. It has 4 target material
but good for uniformity across 150mm
substrates. ...
Confidential
Organisation
Small Enterprise
Expertise in Sputtering, IBD.
Design, Assemble, Test, Support.
Metal cutting is...
Confidential
Ion Beam Deposition
Applications
Precision metallisation for HDD sensors and MRAM.
• Hard bias for HDD heads....
Ion Beam Deposition
The perfect machine for MR,
MRAM, GMR, TMR or other
magnetic orientated thin film
applications. Consis...
3600 IBD (Al2O3 3400)
Confidential
%Uniformity
CrSi CoFe NiFe Ta Cu PtMn Al Ru SiO2 Ta2O5 Al2O3
0.0
0.2
0.4
0.6
0.8
Materi...
Confidential
Smoothness and Texture
By its nature Ion Beam Deposition is performed at a low
process pressure, typically in...
Confidential
3600 IBD
Ra over 500 nm sq 0.23
nm
Ra over 500 nm sq 0.26
nm
Critical bottom
electrode
Smooth seed
for
Tunnel...
Confidential
Performance - examples - 200 mm
SiO2 -Uniformity 0.06%
Ta2O5 Uniformity 0.07%
IBD Deposition Uniformity
12
Confidential
3600 IBD
All films 50 nm thick
13
Confidential
3400 IBD
substrate table
auxiliary ion source
active target
target carousel
deposition ion source
14
Confidential
Ion Beam Deposition Module
3400 IBD Module.
Stainless steel fabricated chamber.
Full aperture access door, al...
Confidential
Ion Beam Deposition Module
3400 IBD Module.
Vacuum system.
3200 l.s-1 magnetically levitated turbomolecular p...
Confidential
200 mm Semiconductor production system.
Initially Motorola - now Freescale.
• Brooks Gemini 200 - 300 bridge ...
Confidential
DARPA funded programme.
1996 supplied Motorola with a combined Sputtering and IBD
deposition tool.
1998 suppl...
Confidential
Mnem-ix
19
Confidential
Mnem-ix
20
Confidential
Mnem-ix
21
Confidential
200 mm Wafer Handling Platform
Brooks Automation G2
Vacuum Transfer.
Cryogenically pumped.
OnBoard8.
Load loc...
Confidential
3600 - 3800 IBD
Rectangular stainless steel chamber, with full
aperture access door.
Removable segmented cham...
Confidential
3600 IBD
Dual axis substrate table.
On-axis wafer rotation, continuous, 0 to 60 rpm.
Wafer orientation axis, ...
Confidential
Multi-ring Magnetron Target Erosion
Re-sputtering of material from the substrate back to
the target contribut...
Confidential
Ion Beam Target Erosion
In ion beam deposition the target
area eroded is greater and more
uniform across the ...
300 mm Deposition Performance
Confidential
Features
Unique geometry.
• Unique rf ion source.
• Multi-target sequential spu...
Confidential
Performance - examples
IBD Deposition Uniformity ± 0.008%
28
Confidential
Random access vacuum cassette load lock/s.
Standard 25 wafer cassette.
Optical sensors for slide out detectio...
Confidential
Static cassette load lock.
Static four (4) wafer cassette.
Vertical travel of the transfer arm (35 mm) is use...
Confidential
Transfer Chamber
Transfer chamber.
Six port or Eight port.
Six port; two load ports and four
process ports.
E...
Control Automation System
Features
System is not a PLC.
• Modular computer with industrial I/O.
• Intel micro-processor.
•...
Control Automation System
Confidential
Features
CPU - only Ethernet &
COM1 ports.
• No video, no keyboard,
no mouse.
• Net...
How An
Ion Beam
Works
Confidential
34
RF Ion Source
Features
RF ion source.
Filamentless current neutralisation.
Magnetically confined glow discharge.
Embedded ...
Ion Source and Neutraliser
15 cm Ion Source Mk III
RF excited.
Proven technology.
Production engineered.
Triode Accelerato...
Ion Extraction - Child-Langmuir
I = α
a
D(
)
2
V
3/2
ex
4πε0
9
2
em√
a = aperture radius
m = ion mass (amu)
V = V + V
-+
D...
Triode Accel - Decel Extraction
+
+
-
-
glow
discharge
Vp
Vex = Vp + V+ + ∣V-∣
Eg:
Vp = 20
V+ = 500
V- = 1500
Vbeam = 520
...
Rotary Substrate Table
Features
Dual Axis Table
Rotation on sample axis.
Rotation to provide a variable inclination to the...
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Ion beam deposition, wtth great uniformity.

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We sell Ion Beam Deposition system with 4, 6 or 8 target material. Great machine for thin magnetic deposition.

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Ion beam deposition, wtth great uniformity.

  1. 1. ConfidentialNovember 2008 1 Nordiko Technical Services Limited 500/550 Nest Business Park Martin Road Havant Hampshire PO9 5TL United Kingdom Corporate Member 1
  2. 2. Confidential 1 Location 50° 51’ 54.67”, 0° 58’ 15.49” Nordiko Technical Services Limited Nest Business Park 500 m2 (5,380 ft2) 70 m2 (750 ft2) cleanroom 2
  3. 3. Confidential 2 Introduction Nordiko Limited Founded in 1972. Sputtering - magnetron and RF diode sputtering. Ion Beam technology - introduced in 1989. First commercially available RF ion source. Ion Beam Deposition. Ion Beam Milling. Nordiko Limited Acquired by Shimadzu Corporation 1998. Shimadzu decided to close Nordiko in 2003. •Nordiko Technical Services Limited - May 2003. • Acquired by Anelva Corporation - June 2005. • Anelva 100% owned subsidiary of NEC. • NEC sold Anelva to Canon - October 2005. • Bought out Canon - October 2011. 3
  4. 4. Ion Beam Deposition If you are depositing very thin films the IBD has been tested to have better uniformity, run to run stability and smoothness than sputtering the same films. 3 Confidential 4
  5. 5. The I-Octave is considered a lab research tool. It has 4 target material but good for uniformity across 150mm substrates. Can be load locked with manual or full scaled automatic Load Lock. 5
  6. 6. Confidential Organisation Small Enterprise Expertise in Sputtering, IBD. Design, Assemble, Test, Support. Metal cutting is out sourced. ISO 9001. ISO 14000 program started. Granted in January 2013. 6
  7. 7. Confidential Ion Beam Deposition Applications Precision metallisation for HDD sensors and MRAM. • Hard bias for HDD heads. • Alumina deposition for HDD Gap and infill. • Optical films for DWDM. • VOx for infrared sensors. 7
  8. 8. Ion Beam Deposition The perfect machine for MR, MRAM, GMR, TMR or other magnetic orientated thin film applications. Consistent and repeatable even at 30 angstroms. 6 or 8 target materials or order with 2 deposition modules and get 12 or 16 materials. Confidential 8
  9. 9. 3600 IBD (Al2O3 3400) Confidential %Uniformity CrSi CoFe NiFe Ta Cu PtMn Al Ru SiO2 Ta2O5 Al2O3 0.0 0.2 0.4 0.6 0.8 Material %Uniformity Material 0.8 0.6 0.4 0.2 0CrSi CoFe NiFe Ta Cu PtMn Al Ru SiO2 Ta2O5 Al2O3 9
  10. 10. Confidential Smoothness and Texture By its nature Ion Beam Deposition is performed at a low process pressure, typically in the region of 1E-04 Torr. Multi-layer optical structures deposited by ion beam rely on the intrinsic film smoothness of the technique to deliver high performance low loos and low defect films. The elimination of energetic plasma ions near the wafer prevents induced surface roughening. Ra 0.224 nm 10
  11. 11. Confidential 3600 IBD Ra over 500 nm sq 0.23 nm Ra over 500 nm sq 0.26 nm Critical bottom electrode Smooth seed for Tunnel barrier Repeatable & yielding MRAM 11
  12. 12. Confidential Performance - examples - 200 mm SiO2 -Uniformity 0.06% Ta2O5 Uniformity 0.07% IBD Deposition Uniformity 12
  13. 13. Confidential 3600 IBD All films 50 nm thick 13
  14. 14. Confidential 3400 IBD substrate table auxiliary ion source active target target carousel deposition ion source 14
  15. 15. Confidential Ion Beam Deposition Module 3400 IBD Module. Stainless steel fabricated chamber. Full aperture access door, aluminium. Four targets. Deposition ion source. 15 cm RF excited at 13.56 MHz. 600 W solid state generator. Automatic, digitally controlled impedance matching transformer. Molybdenum grid triode ion extraction accelerator. Assist (auxiliary) ion source. 20 cm RF excited at 13.56 MHz. 600 W solid state generator. Automatic, digitally controlled impedance matching transformer. Molybdenum grid triode ion extraction accelerator. 15
  16. 16. Confidential Ion Beam Deposition Module 3400 IBD Module. Vacuum system. 3200 l.s-1 magnetically levitated turbomolecular pump - directly coupled, no high vacuum isolation valve. In chamber WaterPump, 20,000 ls-1 water vapour speed. 30 m3.hr-1 dry mechanical pump. Combination vacuum gauge providing measurement from atmosphere through to 1E-09 Torr. Gas Metering. Metal sealed digitally addressed electronic mass flow controllers, each with a downstream high integrity diaphragm isolation valve. Normally two channels are provided to meter gas to each of the ion sources, additional channels can be specified. Each neutraliser has a further channel. For reactive systems one channel is fitted to meter gas directly into the chamber. A high pressure RGA is available to provide closed loop partial pressure control to allow mixed oxide stoichiometry to be achieved reproducibly. 16
  17. 17. Confidential 200 mm Semiconductor production system. Initially Motorola - now Freescale. • Brooks Gemini 200 - 300 bridge platform. Mnem-ix Vacuum Transfer Vacuum load locks single/dual wafer EFEM atmospheric aligner 17
  18. 18. Confidential DARPA funded programme. 1996 supplied Motorola with a combined Sputtering and IBD deposition tool. 1998 supplied Motorola with the second IBD deposition tool. 1998 supplied Motorola with a revised Sputtering deposition tool. Motorola selected IBD over Sputtering for production. 2002 supplied Motorola with a production IBD MRAM tool - Mnem-ix. Configured for processing 200 mm wafers. • Brooks Gemini 6000, 200 - 300 mm bridge platform. • Twin 7000 modules. • Ion beam pre-clean. • Ion beam oxidation. • Single 3600 IBD module. MRAM - Motorola - FreeScale - Everspin 18
  19. 19. Confidential Mnem-ix 19
  20. 20. Confidential Mnem-ix 20
  21. 21. Confidential Mnem-ix 21
  22. 22. Confidential 200 mm Wafer Handling Platform Brooks Automation G2 Vacuum Transfer. Cryogenically pumped. OnBoard8. Load locks. Single/dual wafer. Turbomolecular pump. 200 l.s-1. EFEM. Aligner 22
  23. 23. Confidential 3600 - 3800 IBD Rectangular stainless steel chamber, with full aperture access door. Removable segmented chamber liners. 3600 - six target carousel. 3800 - eight target carousel. 15 cm RF deposition ion source. 20 cm RF auxiliary ion source. Twin 3200 l.s-1 magnetically levitated turbomolecular pumps. 20,000 l.s-1 in chamber WaterPump. 23
  24. 24. Confidential 3600 IBD Dual axis substrate table. On-axis wafer rotation, continuous, 0 to 60 rpm. Wafer orientation axis, 0 to 180°. Embedded electro-magnets. Wafer plane magnetic field projector. Shutter. 24
  25. 25. Confidential Multi-ring Magnetron Target Erosion Re-sputtering of material from the substrate back to the target contributes to the change in compositional control as the target ages Within the magnetic fields of a magnetron electrode the sputtering plasma is intensely localised. Differential sputtering occurs in ALL multi-component materials. The deeper the erosion variations the greater the variations in composition due to sputtering from differnent depths of the target. 25
  26. 26. Confidential Ion Beam Target Erosion In ion beam deposition the target area eroded is greater and more uniform across the target. This greatly reduces the effect of differential sputtering. In addition there is a further pressure independent way of maintaining composition as the target ages. Using the ion beam approach there is no resputtering from the substrate. The wafer surface is not subject to bombardment by energetic neutrals. As a result the a smooth surface texture is achieved. 26
  27. 27. 300 mm Deposition Performance Confidential Features Unique geometry. • Unique rf ion source. • Multi-target sequential sputtering. • Heavy duty vacuum load lock. Benefits Excellent within wafer uniformity. • Excellent repeatability. Performance Dielectric deposition rate 24 nm.min-1. • Within wafer non-uniformity across 300 mm 0.11% 1 sigma. 27
  28. 28. Confidential Performance - examples IBD Deposition Uniformity ± 0.008% 28
  29. 29. Confidential Random access vacuum cassette load lock/s. Standard 25 wafer cassette. Optical sensors for slide out detection. Optical sensors for cassette mapping. 700 l.s-1 turbomolecular pump. 30 m3.hr-1 dry mechanical pump. Combined vacuum gauge covering he range from atmosphere to 1E-08 Torr. VAT series 02. VAT series 62 pipeline isolation valve. Vacuum Cassette Load Lock 29
  30. 30. Confidential Static cassette load lock. Static four (4) wafer cassette. Vertical travel of the transfer arm (35 mm) is used to pick from four wafer slots within a static cassette. Common vacuum environment to the robot transfer chamber. No isolation valve between the load lock and the transfer chamber. 700 l.s-1 turbomolecular pump. 28 m3.hr-1 dry mechanical pump. Combined vacuum gauge covering he range from atmosphere to 1E-08 Torr. VAT series 02. VAT series 62 pipeline isolation valve. Ideal for research applications where small batches are often processed Vacuum Load Lock - Static Cassette 30
  31. 31. Confidential Transfer Chamber Transfer chamber. Six port or Eight port. Six port; two load ports and four process ports. Eight port; two load ports and six process ports. Optical sensors for wafer tracking. 700 l.s-1 turbomolecular pump. 30 m3.hr-1 dry mechanical pump. Three axis robot. SCARA style - single end effector. Rotary vacuum seal, magnet fluid feedthrough. Z-axis seal, edge welded bellows. Aligner. Optical CCD aligner. Operates in concert with the robot. Wafer centre alignment ±0.25 mm. Angular alignment ±0.1 degree. 31
  32. 32. Control Automation System Features System is not a PLC. • Modular computer with industrial I/O. • Intel micro-processor. • OS is Windows CE. • HMI on a separate PC. Installations Fourteen installations. • Three new systems +. • Eleven field retro-fits. • Ten in USA. • One in Japan. ⎬production tools. Confidential32
  33. 33. Control Automation System Confidential Features CPU - only Ethernet & COM1 ports. • No video, no keyboard, no mouse. • Networked PC for user interface, HMI. • Flash storage, no rotating hard disc. • Low power CMOS - no fans. • Serial, digital & analogue I/O modules. • No back-plane - I/O modules build the bus. • Intelligent Instrumentation. 33
  34. 34. How An Ion Beam Works Confidential 34
  35. 35. RF Ion Source Features RF ion source. Filamentless current neutralisation. Magnetically confined glow discharge. Embedded DC HT feedthroughs. Good maintenance access. Sources 5, 10, 15, 20, 25, 30 and 36 cm. Benefits 13.56 MHz plasma excitation. High efficiency sources. Rapid process qualification. High performance beam accelerator. Reliable operation in Oxygen. Precision - Control. +ve -ve RF ion source plasma bridge neutraliser accelerator ion beam Accelerator Triode. Graphite or Molybdenum grids. Stainless steel support rings. Confidential 35
  36. 36. Ion Source and Neutraliser 15 cm Ion Source Mk III RF excited. Proven technology. Production engineered. Triode Accelerator Molybdenum grids. Robust. Simple assembly. Compact Neutraliser DC excited. Confidential 36
  37. 37. Ion Extraction - Child-Langmuir I = α a D( ) 2 V 3/2 ex 4πε0 9 2 em√ a = aperture radius m = ion mass (amu) V = V + V -+ D = electrode separation Confidential 37
  38. 38. Triode Accel - Decel Extraction + + - - glow discharge Vp Vex = Vp + V+ + ∣V-∣ Eg: Vp = 20 V+ = 500 V- = 1500 Vbeam = 520 V=0 V=2000 Accel Decel Output Beam Vbeam = Vp + V+ + (V- - V-) Vbeam = Vp + V+ Vbeam ≃ V+ Confidential 38
  39. 39. Rotary Substrate Table Features Dual Axis Table Rotation on sample axis. Rotation to provide a variable inclination to the ion beam or material deposition flux. Configurable for different wafers/substrate sizes 150 to 300 mm. Water cooled table. Options High speed rotation, 1000 rpm. Substrate heating. Magnetic field projection, in the plane of the substrate. Water cooled table. Substrate cooling is key for pattern transfer in milling. 39 Confidential
  • mustafaarikan

    Jan. 15, 2018
  • sidorovdi

    Nov. 13, 2014

We sell Ion Beam Deposition system with 4, 6 or 8 target material. Great machine for thin magnetic deposition.

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