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The structure of the C-C complex in silicon has been debated since long time. Different theoretical and experimental studies tried to shed light on the properties of these defects that are at the origin of the light emitting G-center. It is essential to understand structural and electronic properties of
these defects because they are relevant for applications in lasing and there is an increasing interest
to control their formation and concentration in bulk silicon. In this paper, we study structural, electronic, and optical properties of different possible configurations of the C-C complex in bulk
silicon by means of density functional theory (DFT) plus many-body perturbation theory (MBPT).
Our finding show that different competing structures could be at the origin of the experimental results.