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Ashwani Vishwakarma
ROLL No. –290
MSc-II Inorganic Chemistry
CRYSTAL GROWTH
FROMVAPOR PHASE
Outline
• Introduction
• Mechanism of epitaxial growth
• Motivation of epitaxial deposition
• Properties of epitaxial layers
• Applications of epitaxial layers
• Summary
What is epitaxial .?
• The method of depositing a mono-crystalline film on a mono-crystalline
substrate .The deposited film is denoted as epitaxial layer.
• The term epitaxy comes form the Greek roots,
Epi means ‘‘above” and
Taxis means “deposition in ordered ”
• Epitaxial films may be grown from gaseous or liquid precursors.
• The substrate acts as a seed crystal, the deposited film takes on a lattice
structure and orientation identical to those on the substrate.
Ordered, crystalline
growth; NOT epitaxial
Epitaxial growth:
Mechanism of Epitaxial Growth
Types of epitaxial films or layer
• Epitaxial films can be classified into two types:
1) Homoepitaxy
2) Heteroepitaxy
Growth of a layer of a different material than the substrate (GaAs on Si)
Growth of a layer of the same material as the substrate(Si on Si)
Motivation
• Epitaxial growth is useful for applications that place stringent
demands on a deposited layer
High purity
Low defect density
Controlled doping profiles
High uniformity
Safe, efficient operation
• Can create clean, fresh surface for device fabrication
Methods
• Epitaxial silicon is usually grown using vapor-phase epitaxy (VPE), a
modification of chemical vapor deposition.
• Molecular-beam and liquid-phase epitaxy (MBE and LPE) are also
used, mainly for compound semiconductors. Solid-phase epitaxy is
used primarily for crystal-damage healing.
Properties of Epitaxial Layer
• Crystallographic structure of film reproduces that of substrate
• Substrate defects reproduced in epitaxial layer
• Electrical parameters of epitaxial layer independent of substrate
Dopant concentration of substrate cannot be reduced
Epitaxial layer with less dopant can be deposited
• Epitaxial layer can be chemically pure than substrate
Applications
• Nanotechnology
• Semiconductor fabrication
• High quality crystal growth (silicon-germanium, gallium arsenide
etc.)
• To deposit organic molecule onto crystalline.
Summary
• Deposition continues crystal structure
• Creates clean, interfaces and high quality surfaces
• High temperature, clean surface required
• Vapor phase epitaxy a major method of deposition
• Epitaxial layers used in highest quality wafers
References
• Solid State Chemistry and its Applications
BY- ANTHONY R.WEST
ThankYou

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crystal growth from vapour phase

  • 1. Ashwani Vishwakarma ROLL No. –290 MSc-II Inorganic Chemistry CRYSTAL GROWTH FROMVAPOR PHASE
  • 2. Outline • Introduction • Mechanism of epitaxial growth • Motivation of epitaxial deposition • Properties of epitaxial layers • Applications of epitaxial layers • Summary
  • 3. What is epitaxial .? • The method of depositing a mono-crystalline film on a mono-crystalline substrate .The deposited film is denoted as epitaxial layer. • The term epitaxy comes form the Greek roots, Epi means ‘‘above” and Taxis means “deposition in ordered ” • Epitaxial films may be grown from gaseous or liquid precursors. • The substrate acts as a seed crystal, the deposited film takes on a lattice structure and orientation identical to those on the substrate.
  • 4. Ordered, crystalline growth; NOT epitaxial Epitaxial growth: Mechanism of Epitaxial Growth
  • 5. Types of epitaxial films or layer • Epitaxial films can be classified into two types: 1) Homoepitaxy 2) Heteroepitaxy Growth of a layer of a different material than the substrate (GaAs on Si) Growth of a layer of the same material as the substrate(Si on Si)
  • 6. Motivation • Epitaxial growth is useful for applications that place stringent demands on a deposited layer High purity Low defect density Controlled doping profiles High uniformity Safe, efficient operation • Can create clean, fresh surface for device fabrication
  • 7. Methods • Epitaxial silicon is usually grown using vapor-phase epitaxy (VPE), a modification of chemical vapor deposition. • Molecular-beam and liquid-phase epitaxy (MBE and LPE) are also used, mainly for compound semiconductors. Solid-phase epitaxy is used primarily for crystal-damage healing.
  • 8. Properties of Epitaxial Layer • Crystallographic structure of film reproduces that of substrate • Substrate defects reproduced in epitaxial layer • Electrical parameters of epitaxial layer independent of substrate Dopant concentration of substrate cannot be reduced Epitaxial layer with less dopant can be deposited • Epitaxial layer can be chemically pure than substrate
  • 9. Applications • Nanotechnology • Semiconductor fabrication • High quality crystal growth (silicon-germanium, gallium arsenide etc.) • To deposit organic molecule onto crystalline.
  • 10. Summary • Deposition continues crystal structure • Creates clean, interfaces and high quality surfaces • High temperature, clean surface required • Vapor phase epitaxy a major method of deposition • Epitaxial layers used in highest quality wafers
  • 11. References • Solid State Chemistry and its Applications BY- ANTHONY R.WEST