Presentation Serov


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  • Dear colleagues! I’m glad to present here small report about my experience, knowledge and educational background.
  • Presentation Serov

    1. 1. Alexander Serov As a Specialist
    2. 2. Highlights <ul><li>Solid background in physics, mathematics, engineering and philosophy </li></ul><ul><li>Wide experience at non-contiguous domains of science and technology </li></ul><ul><li>Excellent computer proficiency </li></ul><ul><li>Highly committed to continuously updating my professional knowledge </li></ul><ul><li>Excellent communication and interpersonal skills </li></ul><ul><li>Strong analytical mind, self-organized, quick learner, hard worker </li></ul>
    3. 3. Educational Background 5.0 GPA: 2001-2002 Period: “ Numerical Method of Non-Steady Stephan Problem Solution at Simulation of Semiconductor Monocrystals Growth from the Melt” Diploma: Philosophy Doctor Degree: Philosophy Doctor Degree Numerical Simulation / Computer-Aided Design Major: Methods of Numerical Simulation Department: Post-Graduate Courses of the Institute of Design Problems in Microelectronics, Russian Academy of Sciences Institution:
    4. 4. Educational Background Space Materials Department: 1990-1995 Period: “ Calculation, Investigation and Optimization of Crystallization Front Shape and of Crystal Characteristics on the Basis of the United Numerical Model of Crystal Growth from the Melt” Diploma: 4.86 GPA: Engineer – Researcher Degree: Physicist Researcher Physics of Semiconductors and Dielectrics Major: Post-graduate Courses of Research Institute “Nauchny Center” Institution:
    5. 5. Educational Background 1982-1988 Period: “ Investigation of Quantum Size Effects in Thin Films of CdTe ” Diploma: 4.5 GPA: Master of Science Degree: Master of Science Quantum Radio-Physics Major: General and Applied Physics Department: Moscow Institute of Physics and Technology (MPTI) University:
    6. 6. Additional Educational Background 17.07 – 19.07 2006 Period: Certificate of Training at HP ITIL Diploma: Title of Background at HP ITIL Information Technology Infrastructure Library (ITIL) Foundation for IT Service Management Major: Hewlett – Packard Education Centre Institution:
    7. 7. Job Experience PDE, FDTD, FETD, Galerkin Method, Methods of Computational Physics MS Project, MatLab, C, MS Windows Knowledge: <ul><li>Management of technical and research projects </li></ul><ul><li>Numerical methods for the solution of partial differential equations (PDE) </li></ul><ul><li>Software development </li></ul>Skills: 2005 - present Period: Principal Specialist (2005-2007), Head of the Department of Integrated Systems (since Jul. 2007) Position: SCAN-PLUS, Moscow, Russia Company:
    8. 8. Job Description (since 2005) <ul><li>Management of technical projects “Regional segments of United System of Catalogue” (7 projects for the Central Bank of Russian Federation) </li></ul><ul><li>Management of technical project “The system of reserve copying of information resources” (Project for the company “Gazexport”) </li></ul><ul><li>Development of numerical method for the simulation of ultrasonic waves transfer </li></ul><ul><li>Development of numerical method of Maxwell equations solution </li></ul><ul><li>Development of molecular dynamics model for the simulation of ions transfer through the opposite gas flow in mass-spectrometry equipment </li></ul><ul><li>Software realization of the developed numerical methods </li></ul>
    9. 9. Numerical method of ultrasonic waves transfer <ul><li>Method is based on 2D Galerkin realization of the united FDTD/FETD - techniques </li></ul><ul><li>Numerical problem is formulated for non-dimensional system of non-steady PDE </li></ul><ul><li>Method is developed for the investigation of ultrasound waves scattering by phononic crystal </li></ul><ul><li>Method may be applied for the simulation of waves scattering by the arbitrary system of scatterers </li></ul><ul><li>Software realization of method is at the stage of testing </li></ul><ul><li>General form of solved PDE system: </li></ul>where: W – the vector of media displacement, t – time, λ and μ - Lame coefficients,  – the density of media
    10. 10. Undimensional form of ultrasonic waves transfer equations <ul><li>where: U – the component of the vector of media displacement along x-axis, V – the component of the vector of media displacement along y-axis, x and y – space coordinates, t – time, λ and μ - Lame coefficients, As – undimensional similarity parameter </li></ul>
    11. 11. Numerical method of Maxwell equations solution <ul><li>Conservative non-steady Finite Differences scheme of second order accuracy is realized for 3D geometry </li></ul><ul><li>Method is based on the preliminary transformations of Maxwell equations for E x , E y , E z , H x , H y , H z </li></ul><ul><li>Numerical scheme is based on the decomposition of solved system of non-dimensional equations on time and space coordinates </li></ul><ul><li>Method was developed for the using at a molecular dynamics simulations of ions transfer/scattering through the opposite gas flow </li></ul><ul><li>Method may be adopted for the using at various types of calculation domain geometry </li></ul><ul><li>Method is at the stage of redevelopment </li></ul>
    12. 12. Job Experience PDE, FDTD, FETD, Methods of Computational Physics Matlab, C, MS Windows Knowledge: <ul><li>Numerical simulation methods for the systems including components of various physical nature </li></ul><ul><li>Numerical methods for the solution of PDE applied at Computer-Aided Design (CAD) tools </li></ul><ul><li>Macromodels applied at CAD tools </li></ul><ul><li>Cellular automata – based numerical models </li></ul><ul><li>Software development </li></ul>Skills: 2001 – 2002, 2003 – 2005 Period: Senior research scientist Position: Institute of Design Problems in Microelectronics of Russian Academy of Sciences, Moscow, Zelenograd, Russia Company:
    13. 13. Job Description (2001 – 2003, 2003 – 2005) <ul><li>Development and implementation of numerical methods for the investigation of Micro-Electro-Mechanical Systems (MEMS) </li></ul><ul><li>Development and investigation of quasi-3D numerical model of electrostatic MEMS using simulation method based on Finite Elements Analysis </li></ul><ul><li>Development of methods for automatic generation of MEMS macromodels based on a Mass-Spring Model including approximation of device structural parameters </li></ul><ul><li>Development of cellular automata models and investigation of their application to numerical integration problems with algorithmic compensation of structural defects </li></ul><ul><li>Software realization and investigation of cellular automata models </li></ul>
    14. 14. Application of the developed numerical methods of MEMS simulation <ul><li>Development of MEMS CAD tools </li></ul><ul><li>Development of CAD tools used for the design of technical systems including components of various physical nature </li></ul><ul><li>Behavioral simulation of electrostatic MEMS </li></ul><ul><li>Simulation of MEMS characteristics depending upon its design </li></ul><ul><li>Application for the development of reduced-order models of MEMS </li></ul>
    15. 15. Application of MSM model of electrostatic MEMS <ul><li>Time dependence of the distance between plates of electrostatic MEMS at the arising of pull-in effect </li></ul>
    16. 16. Undimensional equation describing the dynamics of moving part at the quasi-3D model of electrostatic MEMS <ul><li>where: x , z – space coordinates, t – time, u(x,t) - the mid-line of the beam, χ - parameters depending on the properties of the substance between the moving plate and substrate, the position of the element, elastic properties of the beam , De , Ga and Em - the similarity parameters for the problem , ψ – the potential of electric field </li></ul>
    17. 17. Systolic matrix types used at cellular automata-based investigations of algorithmic compensation of structural defects Network with 8 neighborhoods (a) and one with 4 neighborhoods (b) (a) (b)
    18. 18. Cellular automata-based investigations of algorithmic compensation of structural defects at systolic matrixes Temperature field distribution calculated with using of algorithmic compensation of one defect in systolic matrix (a) and without compensation (b) (a) (b)
    19. 19. Job Experience Methods of Experimental and Computational Physics C, TOFMA, MS Visual Studio, MS Windows, Mac OS Knowledge: <ul><li>Time-of-Flight Mass-Spectrometry equipment </li></ul><ul><li>Methods of ions separation </li></ul><ul><li>Ion guides </li></ul>Skills: 2002 - 2003 Period: Postdoctoral Fellow, Time-of-Flight Mass-Spectrometry (TOF-MS) Laboratory Position: University of Manitoba, Winnipeg, Canada Company:
    20. 20. Job Description (2002 – 2003) <ul><li>Development of mathematical model for the simulation of ions transfer in a quadrupole region of mass spectrometer </li></ul><ul><li>Experimental and theoretical investigation of ions separation methods inside of quadrupole region of time-of-flight mass-spectrometer </li></ul><ul><li>Development of software programs for the experimental mass-spectrometry data analysis </li></ul><ul><li>Experimental analysis of peptides structures using orthogonal injection time-of-flight mass spectrometer </li></ul>
    21. 21. Experimental equipment: General scheme of CFI o-TOF
    22. 22. Experimental investigation of ion separation methods at quadrupole region of mass-spectrometer <ul><li>Dependence of inverse </li></ul><ul><li>time of ions drifting </li></ul><ul><li>t d -1 on the pressure of </li></ul><ul><li>separating gas flow. </li></ul><ul><li>Data were acquired at </li></ul><ul><li>nitrogen using as a </li></ul><ul><li>buffer gas (the total </li></ul><ul><li>pressure at quadrupole </li></ul><ul><li>region was constant and </li></ul><ul><li>was equal to 1.000·10 -5 </li></ul><ul><li>Torr at experiments) </li></ul>
    23. 23. Job Experience CAD of electric circuits C, GNU, MS Windows, Linux, Solaris Knowledge: <ul><li>Numerical methods of behavioral simulation of passive RC-networks </li></ul><ul><li>Numerical models of transistors at various types of technological realization </li></ul><ul><li>Krylov-subspaces techniques </li></ul>Skills: 2000 - 2002 Period: Engineer Position: Research Center “MicroStyle” / Motorola Research Laboratory (MRL), Moscow, Zelenograd, Russia Company:
    24. 24. Job Description (2000 - 2002) <ul><li>Development and investigation of the algorithm for the reduction of passive RC-networks based on a projection technique (Krylov spaces-based method) </li></ul><ul><li>Development of software realization of reduction algorithm and its implementation at Motorola Fast Simulator (FSiM) tools (Motorola/MicroStyle Project “Fast SIMulator of electric circuits ”) </li></ul><ul><li>Development of Subcircuit Transistor Model (STM) with further application of FSiM STM software for BSIM3, BSIM4, B3SOI, SSIM, SSIMSOI technologies </li></ul><ul><li>Development of software realization of STM for implementation at FSiM tools </li></ul><ul><li>Development of software tools for the investigation of new Motorola MICA/FSiM technology </li></ul>
    25. 25. Job Experience Methods of system analysis, event-driven models Matlab, Pascal, Borland Delphi, MS Windows Knowledge: <ul><li>System development & system analysis </li></ul><ul><li>Architectures of Communications-Satellite Networks </li></ul><ul><li>Data communication protocols </li></ul>Skills: 1995 - 2001 Period: Engineer - researcher Position: Scientific Research Institute “Micropribor”, Technical Research Center “Elsov” , Moscow, Zelenograd, Russia Company:
    26. 26. Job Description ( 1995 - 2001) <ul><li>Development of method for the simulation of channel and network communication protocols and its software realization </li></ul><ul><li>Numerical analysis of operation of designed protocols in a group of earth-based stations </li></ul><ul><li>Development of numerical model of carrying-capacity of space network, investigation of the data transfer parameters for various architectures of the network </li></ul><ul><li>Participation in software development for the Control Center of Space Network “Bankir”: designed programs responsible for the allocation and re-allocation of space channel resources </li></ul><ul><li>Participation in development of a software-hardware complex for the control of frequency and power resources of a satellite: elaborated measurement and data interpretation technique </li></ul><ul><li>Participation at development of control algorithms for power transmitters of earth-based stations </li></ul>
    27. 27. Numeric investigation and optimization of channel level protocols developed for space network “Bankir” The dependence of average utilized portion of radio-frame’ reserved access resource (Z) from the number of earth-based stations having access to one space channel (X). Calculations were performed for the time interval 500 T rk . Average information load for one station: curve 1 - 2000 packets/hour, curve 2 – 1170 packets/hour, curve 3 – 1035 packets/hour.
    28. 28. Numeric investigation and optimization of methods used for the control of earth-based stations transmitters’ power The dependence of the average normalized informational loading sent through the single space satellite beam from the period of self-adjustment of power of earth-based stations . Calculations were made for the decentralized method of power adjustment (self-adjustment) The number of duplex space channels per one satellite beam: curve 1 – 19, curve 2 – 29, curve 3 - 37 t, s
    29. 29. Job Experience PDE, conservative FDTD-based methods, adaptive and moving computational grids Fortran-77, Fortran Power Station, Serfer, MS Windows, MS DOS Knowledge: <ul><li>Methods of numerical solution of heat- and mass-transfer problems in domains having time-dependent geometry </li></ul><ul><li>Methods of semiconductor monocrystals growth from the melt </li></ul><ul><li>Methods of numerical optimization at Technological Computer-Aided Design (TCAD) tools </li></ul>Skills: 1990 - 1995 Period: Physicist – researcher Position: Scientific Research Institute “Nauchny Center” , Moscow, Zelenograd, Russia Company:
    30. 30. Job Description (1990 - 1995) <ul><li>Development of the set of numerical models and their </li></ul><ul><li>application for the development of technological equipment </li></ul><ul><li>used for the growth of monocrystals onboard the orbital station </li></ul><ul><li>“ Mir”: </li></ul><ul><li>Development, investigation and implementation of numerical method for non-steady Stephan problem solution (FDTD-based method of PDE system solution at domain having time-dependent geometry) </li></ul><ul><li>Numerical optimization of technological parameters of monocrystals growth by vertical directional crystallization method at normal and low gravity </li></ul><ul><li>Numerical investigation of physical processes at the bulk of the melt and of crystal properties’ dependence from the set of technological experiment parameters </li></ul><ul><li>Development, investigation and implementation of the set of numerical models for the thermal field investigation inside of thermal furnaces and for the design of equipment “Gallar”, “Izumrud” </li></ul>
    31. 31. Numerical method of non-steady Stephan problem solution <ul><li>Conservative non-steady Finite Differences scheme of second order accuracy realized for two-phase physical system having time-dependent axis-symmetric 2D geometry </li></ul><ul><li>Solution of non-steady Navier-Stockes, thermal and diffusion equations using the moving computational grid </li></ul><ul><li>Mathematical model of physical processes developed for the investigation of impurity micro-segregation near crystallization front </li></ul><ul><li>Calculation of temperature and shape of crystallization front depending upon the technological experiment and equipment parameters (gravity level and direction, the speed of cooling, stability of thermal field, composition of the melt) </li></ul><ul><li>Effective algorithms of numerical integration of PDE system based on the decomposition of equations on time, space coordinates and physical processes </li></ul><ul><li>Ability of numerical model modifications for various types of crystallization technology </li></ul><ul><li>Ability of numerical model modifications for effective calculations using the equipment with parallel computations </li></ul>
    32. 32. Simulation of semiconductor monocrystals growth from the melt by vertical directional crystallization method <ul><li>Investigation of CdHgTe and GaAs monocrystals growth under normal and low gravity (Orbital station “Mir”) </li></ul><ul><li>Investigation of melt convection and its dependence upon the micro-segregation processes near the solid/liquid interface </li></ul><ul><li>Investigation of melt super-cooling near crystallization front </li></ul><ul><li>Investigation of physical processes arising near solid/liquid system at the oscillations of outer thermal field </li></ul><ul><li>Calculation of critical value of external thermal field oscillations and arising of crystal re-melting </li></ul>
    33. 33. Numerical investigation of the composition of CdHgTe monocrystals growing from the melt <ul><li>Radial distribution of CdTe in the crystal on a solid / liquid interface obtained at cooling rate 1.16  10 -3 K/s for a following set of parameters: </li></ul><ul><li> = 0.6 rad/s,  = 0.3 deg. С . The curves: 1: t = t 0 + 2  t , 2: t = t 0 + 2.25  t , </li></ul><ul><li>3: t = t 0 + 2.5  t , 4: t = t 0 + 2.75  t , 5: t = t 0 + 3  t , where  t = 2 π /  . </li></ul>
    34. 34. Numerical investigation of impurity segregation processes at the CdHgTe crystal/melt interface <ul><li>Time dependence of the amplitude of impurity’ radial inhomogeneity obtained at solid/liquid interface for the cooling rate  1.16  10 -3 K/ s for a following set of parameters:  = 6.0 rad/s ,  = 0.1 K ( 1 – primary maximums, 2 – secondary ones) </li></ul>
    35. 35. Numerical optimization of technological process of Cd x Hg 1-x Te monocrystals growth from the melt by the vertical directional crystallization method Time dependence of the critical amplitude of oscillations of an exterior radial thermal field obtained at values of a cooling rate 5.21  10 -3 K/s (curve 1) and 1.16  10 -3 K/s (curve 2)
    36. 36. Thank you!