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Spintronics ppt


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Spintronics ppt

  1. 1. Spintronics “A Spin to Remember”Submitted To:- Presented By:-Er. Pieush Vyas Abhishek Shringi(Associate Professor) 08/33/106(Unit In charge EC) VIII Sem ECE
  2. 2. Outline• Spintronics basics• The giant magneto resistance• Applications of GMR• Spin devices• Injections & detection of spin• The MRAM• Recent trends
  3. 3. What is Spintronics?• Utilizes the bizarre property of spin of electron.• Intrinsic angular momentum is spin.• Two arbitrary orientations, and its magnitudes are ± ħ / 2 (ħ is Plank constant).• Directional and coherent motion of electron spin circulates a spin current, which will carry or transport information and control quantum spin in an spintronic device.
  4. 4. Why Spintronics?• Moore’s Law:No. of Transistor doubles in every 18 months.•Complexity:Complex Chip Design & Power Loss.• Motivation:Spintronics-Information is carried not by electron charge but by it’s spin.
  5. 5. Moore’s law
  6. 6. Combining the best of both worldsFerro magnets Semiconductors• Stable Memory • Bandgap engineering• Fast switching • Carrier density & type• High ordering temp • Electrical gating • Long spin lifetime• Spin transport • Technological base• Technological base (Electronics)(magnetic recordings)Can we develop spin based How to create control propagatetransistors , switches and logic spin information in semiconductorcircuits? structures?
  7. 7. The Giant Magneto Resistance• A Nano scale phenomena .• Giant refers to giant change in resistance due to current.• It is a quantum mechanical magneto resistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic layers.
  8. 8. Magnetic tunneling junction• Like GMR but better.• More sensitive• Multilayer junction filter• Quantum mechanical principle• Tunneling effect• 2 layers of magnetic metal, separated by an ultrathin layer of insulator, about 1 nm.
  9. 9. Spin transistor• Supriyo Datta and Biswajit Das Transistor
  10. 10. Spin injection into silicon• Injection
  11. 11. Spin manipulation• Hanle effect :- Suppression of spin accumulation Ferro magnet Oxide Silicon B Spin
  12. 12. Magnetic field along the spin• Hanle curve for a) Ge , b) Si
  13. 13. Detection of spin polarization in silicon Tunnel barrier Spin accumulation e- u Ferro magnet Al2O3 n type SiliconTunnel resistance in proportional to u I =G *(V- u/2) I =G *(V+ u/2)
  14. 14. MRAM Magneto resistive RAM Reading process• Measurement of the bit cell resistance by applying a current in the ‘bit line’• Comparison with a reference value mid- way between the bit high and low resistance values
  15. 15. MRAM Magneto resistive RAM Writing process• Currents applied in both lines : 2 magnetic fields• Both fields are necessary to reverse the free layer magnetization• When currents are removed : Same configuration
  16. 16. MRAM Magneto resistive RAM Array structure of MRAM• Reading: transistor of the selected bit cell turned ‘on’ + current applied in the bit line• Writing: transistor of the selected bit cell turned ‘off’ + currents applied in the bit and word lines• Need of 2 magnetic fields for writing
  17. 17. MRAM vs …..
  18. 18. MRAM Magneto resistive RAM• MTJ test structures developed at SPINTEC: the die area with 1x5 μm• 0.2 μm width isolated MTJ element after etch
  19. 19. Advantages of Spintronics Low power consumption. Less heat dissipation. Spintronic memory is non-volatile. Takes up lesser space on chip, thus more compact. Spin manipulation is faster , so greater read & write speed. Spintronics does not require unique and specialized semiconductors. Common metals such as Fe, Al, Ag , etc. can be used.
  20. 20. Conclusion• Spin property of electrons are yet to mastered.• Researcher and scientist are taking keen interest.• Universities and electronic industries collaborating .• Span of last two decade major milestones.• It holds vast opportunities for physics , material & device engineering & technology• Last year PTB, Germany, have achieved a (2GBit/s) write cycle• Potential of the field is colossal and continuous development is required.