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BC548 NPN BJT Datasheet

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BC548 NPN BJT Datasheet

  1. 1. SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES A High Voltage : BC546 VCEO=65V. For Complementary With PNP Type BC556/557/558. N DIM MILLIMETERS E A 4.70 MAX K G B 4.80 MAX D C 3.70 MAX D 0.45 J E 1.00 F 1.27 MAXIMUM RATING (Ta=25 ) G 0.85 H 0.45 H J _ 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT F F K 0.55 MAX L 2.30 BC546 80 M 0.45 MAX Collector-Base N 1.00 BC547 VCBO 50 V 1 2 3 C L Voltage M BC548 30 1. COLLECTOR 2. BASE BC546 65 3. EMITTER Collector-Emitter BC547 VCEO 45 V Voltage BC548 30 TO-92 BC546 6 Emitter-Base BC547 VEBO 6 V Voltage BC548 5 BC546 100 Collector Current BC547 IC 100 mA BC548 100 BC546 -100 Emitter Current BC547 IE -100 mA BC548 -100 Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 1501998. 10. 8 Revision No : 3 1/3
  2. 2. BC546/7/8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 - - 15 nA BC546 110 - 450 DC Current Gain (Note) BC547 hFE VCE=5V, IC=2mA 110 - 800 BC548 110 - 800 Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=5mA - - 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=5mA - 0.9 1.1 V VBE(ON)1 VCE=5V, IC=2mA 0.58 - 0.7 V Base-Emitter Voltage VBE(ON)2 VCE=5V, IC=10mA - - 0.75 V Transition Frequency fT VCE=5V, IC=10mA, f=100MHz - 150 - MHz Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - - 4.5 pF VCE=6V, IC=0.1mA Noise Figure NF - 1.0 10 dB Rg=10k , f=1kHz NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows. CLASSIFICATION none A B C BC546 110 450 110 220 200 450 - hFE BC547 110 800 110 220 200 450 420 800 BC548 110 800 110 220 200 450 420 8001998. 10. 8 Revision No : 3 2/3
  3. 3. BC546/7/8 I C - VCE (LOW VOLTAGE REGION) h FE - I C 240 1k COMMON EMITTER COMMON EMITTER COLLECTOR CURRENT I C (mA) 5.0 6.0 Ta=25 C 200 3.0 500 DC CURRENT GAIN h FE 2.0 300 160 Ta=100 C VCE =5V Ta=25 C 1.0 Ta=-25 C 120 100 80 0.5 50 30 I B =0.2mA VCE =1V 40 0 0 10 0 1 2 3 4 5 6 7 0.1 0.3 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C f T - IC COLLECTOR-EMITTER SATURATION 3k TRANSITION FREQUENCY f T (MHz) 3 COMMON EMITTER COMMON EMITTER VCE =5V I C /I B =10 Ta=25 C 1k VOLTAGE VCE(sat) (V) 1 0.5 500 0.3 300 0.1 100 0.05 Ta=100 C 50 0.03 30 Ta=25 C Ta=-25 C 0.01 10 0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I B - V BE P C - Ta 3k 700 COLLECTOR POWER DISSIPATION COMMON 1k EMITTER 625 VCE =6V BASE CURRENT I B (µA) 300 500 100 P C (mW) 0 C 400 25 C 5 C 30 0 Ta=1 Ta=2 Ta=- 300 10 200 3 1 100 0.3 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 175 BASE-EMITTER VOLTAGE V BE (V) AMBIENT TEMPERATURE Ta ( C)1998. 10. 8 Revision No : 3 3/3
  4. 4. This datasheet has been download from: www.datasheetcatalog.comDatasheets for electronics components.

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