SPICE MODEL of TK20J50D (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of TK20J50D (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TK20J50D (Standard+BDS Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Model Parameters) PART NUMBER: TK20J50D MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters)
  2. 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
  3. 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 3 0 10 20 30 0 10 20 30 gfs(S) Drain current ID (A) Measurement Simulation Transconductance Characteristics Circuit Simulation Result Comparison table Id(A) gfs (s) %Error Measurement Simulation 2 5.600 5.835 4.20 5 8.650 8.909 2.99 10 11.900 12.129 1.92 20 16.200 16.292 0.57 30 19.500 19.214 -1.47
  4. 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 4 V1 V2 20 0 V3 0Vdc U1 TK20J50D V_V1 0V 2V 4V 6V 8V 10V I(V3) 0A 10A 20A 30A 40A 50A Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
  5. 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 5 0 10 20 30 40 50 0 2 4 6 8 10 DraincurrentID(A) Gate-source voltage VGS (V) Measurement Simulation Comparison Graph Circuit Simulation Result Simulation Result ID(A) VGS(V) %Error Measurement Simulation 1 5.050 5.222 3.40 2 5.350 5.421 1.32 5 5.900 5.826 -1.26 10 6.350 6.300 -0.79 20 7.000 7.001 0.01 30 7.500 7.563 0.85 40 7.950 8.054 1.31 50 8.350 8.499 1.78
  6. 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 6 0 V3 0Vdc VDS V1 10 U1 TK20J50D V_VDS 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V I(V3) 0A 1A 2A 3A 4A 5A 6A 7A 8A 9A 10A Rds(on) Characteristics Circuit Simulation result Evaluation circuit Simulation Result ID = 10A, VGS = 10V Measurement Simulation %Error RDS (on)  0.220 0.220 0.00
  7. 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 7 VDD 400 I1TD = 0 TF = 5n PW = 600u PER = 1000u I1 = 0 I2 = 1m TR = 5n - + W1 ION = 0uA IOFF = 1mA W I2 20 0 D2 DbreakU1 TK20J50D Time*1mA 0 20n 40n 60n 80n V(W1:3) 0V 4V 8V 12V 16V Gate Charge Characteristics Circuit Simulation result Evaluation circuit Simulation Result VDD=400V, ID=20A, VGS=10V Measurement Simulation %Error Qgs nC 13.000 12.993 -0.05 Qgd nC 19.000 18.865 -0.71 Qg nC 47.000 38.419 -18.26
  8. 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 8 Capacitance Characteristics Simulation Result VDS (V) Cbd (pF) %Error Measurement Simulation 0.5 3400.000 3325.000 -2.21 1 2980.000 3004.000 0.81 2 2430.000 2484.000 2.22 5 1530.000 1520.000 -0.65 10 825.000 802.600 -2.72 20 312.000 324.000 3.85 Simulation Measurement
  9. 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 9 0 VDD 200Vdc V2 TD = 1u TF = 5n PW = 10u PER = 20u V1 = 0 TR = 5n V2 = 20 L2 50nH R2 50 R1 50 L1 30nH RL 20 U1 TK20J50D Time 0.5us 0.7us 0.9us 1.1us 1.3us 1.5us 1.7us V(U1:G) V(U1:D)/20 0V 2V 4V 6V 8V 10V 12V 14V Switching Time Characteristics Circuit Simulation result Evaluation circuit Simulation Result ID=10A, VDD=200V VGS=10/0V Measurement Simulation %Error ton ns 100.000 100.062 0.06
  10. 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 10 V2 V1 0 V3 0Vdc U1 TK20J50D V_V2 0V 10V 20V 30V 40V 50V I(V3) 0A 10A 20A 30A 40A 50A Output Characteristics Circuit Simulation result Evaluation circuit VGS=6V 8 7 7.5 6.5 10
  11. 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 11 VDS 0 Vsense 0Vdc U1 TK20J50D V_VDS 0V -0.3V -0.6V -0.9V -1.2V -1.5V I(Vsense) 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation Result Evaluation Circuit
  12. 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 12 0.1 1 10 100 0 0.3 0.6 0.9 1.2 1.5 DrianreversecurrentIDR(A) Drain - source voltage-VDS (V) Measurement Simulation Comparison Graph Circuit Simulation Result Simulation Result IDR(A) -VDS(V) %Error Measurement Simulation 0.1 0.590 0.5882 -0.31 0.2 0.620 0.6158 -0.67 0.5 0.655 0.6546 -0.06 1 0.685 0.6876 0.38 2 0.725 0.7271 0.30 5 0.795 0.7989 0.49 10 0.880 0.8782 -0.20 20 0.995 0.9934 -0.16 50 1.260 1.2558 -0.33 70 1.400 1.4101 0.72
  13. 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 13 V1 TD = 1us TF = 20ns PW = 20us PER = 50us V1 = -9.40v TR = 10ns V2 = 10.65v R1 50 0 U1 TK20J50D Time 12us 16us 20us 24us 28us 32us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA Reverse Recovery Characteristics Circuit Simulation Result Evaluation Circuit Compare Measurement vs. Simulation Measurement Simulation %Error trj us 0.420 0.421 0.24
  14. 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 14 Reverse Recovery Characteristics Reference Trj = 0.42 (us) Trb = 1.28(us) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Relation between trj and trb Example Measurement

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