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SPICE MODEL of SCS210AGHR (Professional Model) in SPICE PARK

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SPICE MODEL of SCS210AGHR (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SCS210AGHR (Professional Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS210AGHR MANUFACTURER: ROHM REMARK: Professional Model
  2. 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 (2) (3) (1) Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  3. 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 SCS210AGHR R1 0.01m V1 0Vdc 0 R2 100MEG V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  4. 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.705 0.711 0.85 0.01 0.768 0.771 0.39 0.1 0.835 0.834 -0.12 1 0.935 0.931 -0.43 2 1.000 0.991 -0.90 5 1.140 1.139 -0.09 10 1.360 1.365 0.37 20 1.800 1.798 -0.11
  5. 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10u) 10p 100p 1.0n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 10us V2 = 650 V2 0Vdc R2 100MEG U1 SCS210AGHR Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  6. 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 500.000 496.900 -0.620 0.1 490.000 482.100 -1.612 1 380.000 379.000 -0.263 10 157.000 151.700 -3.376 20 110.000 106.400 -3.273 50 72.000 70.000 -2.778 100 55.000 54.400 -1.091 200 44.000 45.400 3.182 500 38.000 39.010 2.658
  7. 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 0V 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA V1 0Vdc R1 100m 0 R2 100G U1 SCS210AGHR Reverse Characteristic Circuit Simulation result Evaluation circuit
  8. 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.001 338.00 324.80 -3.91 0.01 420.00 419.00 -0.24 0.1 500.00 502.10 0.42 1.5 600.00 598.40 -0.27

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