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Device Modeling of CMRR

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Tsuyoshi Horigome
Tsuyoshi Horigome

Device Modeling of CMRR

Engineering
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Device Modeling of CMRR 18SEP2020 Tsuyoshi Horigome 1
M7 MbreakND M8 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 6u W = 3.28m R1 200k 10 2 8 R2 2MEG R3 2MEG 9 12 5 3 V1 0.03 IN- V2 0.045 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 6u W = 5u M10 MbreakND1 L = 6u W = 5u M1 MbreakPD3 L = 6u W = 25m M2 MbreakPD2 L = 6u W = 25m 66 7 M15 MbreakPD1 L = 6u W = 78.5m 1111 C1 0.5p .MODEL MbreakPD3 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.148E9 TOX=2.000E-6 RG=5 RB=1.000E-3 KP=1E-6 ) .MODEL MbreakPD2 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.50E9 TOX=2.0000E-6 RG=5 RB=1.000E-3 KP=1E-6) .model MbreakND2 NMOS ( LEVEL=3 VTO=0 RS=10.000E-3 RD=10.000E-3 + RDS=1.0000E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 *+ CBD=2.35p ;23.5E-10 + KP=10E-6) 2
CMRR 70dB M7 MbreakND M8 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 6u W = 3.28m R1 200k 10 2 8 R2 2MEG R3 2MEG 9 12 5 3 V1 0.03 IN- V2 0.045 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 6u W = 5u M10 MbreakND1 L = 6u W = 5u M1 MbreakPD3 L = 6u W = 25m M2 MbreakPD2 L = 6u W = 25m 66 7 M15 MbreakPD1 L = 6u W = 78.5m 1111 C1 0.5p .model MbreakND1 NMOS (LEVEL=3 L=6u W=5u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=20E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6) .model MbreakND2 NMOS ( LEVEL=3 VTO=0 RS=10.000E-3 RD=10.000E-3 + RDS=1.0000E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 *+ CBD=30p ;23.5E-10 + KP=10E-6) .MODEL MbreakPD2 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.50E9 TOX=2.0000E-6 RG=5 RB=1.000E-3 KP=1E-6) .MODEL MbreakPD3 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.148E9 TOX=2.000E-6 RG=5 RB=1.000E-3 KP=1E-6 ) 3
CMRR 51.53dB M7 MbreakND M8 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 6u W = 3.28m10 R1 200k 2 8 R2 200 R3 200 9 12 5 3 V1 0.03 IN- V2 0.045 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 6u W = 5u M10 MbreakND1 L = 6u W = 5u M1 MbreakPD3 L = 6u W = 5m M2 MbreakPD2 L = 6u W = 5m 66 7 M15 MbreakPD1 L = 6u W = 78.5m 1111 C1 0.23p .model MbreakND1 NMOS (LEVEL=3 L=6u W=5u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=20E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6) .model MbreakND2 NMOS ( LEVEL=3 VTO=0 RS=10.000E-3 RD=10.000E-3 + RDS=1.0000E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 *+ CBD=30p ;23.5E-10 + KP=10E-6) .MODEL MbreakPD2 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.50E9 TOX=2.0000E-6 RG=5 RB=1.000E-3 KP=1E-6) .MODEL MbreakPD3 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.148E9 TOX=2.000E-6 RG=5 RB=1.000E-3 KP=1E-6 ) 4
M7 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M8 MbreakND M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 6u W = 3.28m R1 200k 10 2 8 R2 200 R3 200 9 12 5 3 V1 0.03 IN- V2 0.045 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 10u W = 5u M10 MbreakND1 L = 10u W = 5u M1 MbreakPD3 L = 6u W = 700u M2 MbreakPD2 L = 6u W = 700u 66 7 M15 MbreakPD1 L = 6u W = 78.5m 1111 C1 0.3p .model MbreakND NMOS ( LEVEL=3 L=6u W=3.2u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=10E6 TOX=2.0E-6 RG=5 RB=1.0000E-3 + KP=10E-6) .model MbreakND1 NMOS (LEVEL=3 L=6u W=5u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=6E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6 5
VTO=-0.25_PD1 M7 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M8 MbreakND M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 4u W = 17m R1 200k 10 2 8 R2 200 R3 200 9 12 5 3 V1 0.07 IN- V2 0.099 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 10u W = 700u M10 MbreakND1 L = 10u W = 700u M1 MbreakPD3 L = 6u W = 505u M2 MbreakPD2 L = 6u W = 895u 66 7 M15 MbreakPD1 L = 2u W = 50m 1111 C1 0.35p .model MbreakND NMOS ( LEVEL=3 L=6u W=3.2u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=10E6 TOX=2.0E-6 RG=5 RB=1.0000E-3 + KP=10E-6) .model MbreakND1 NMOS (LEVEL=3 L=6u W=5u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=1.45E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6 .model MbreakND2 NMOS ( LEVEL=3 VTO=0 RS=10.000E-3 RD=10.000E-3 + RDS=1.0000E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 *+ CBD=30p ;23.5E-10 + KP=10E-6) .model MbreakPD PMOS ( LEVEL=3 L=6u W=19.5u VTO=0 RS=10.000E-3 + RD=10.00E-3 RDS=1.00E9 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6 ) .MODEL MbreakPD1 PMOS (LEVEL=3 VTO=-0.25 RS=10.000E-3 RD=10.000E-3 + RDS=1.00E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 KP=200E-6 ) .MODEL MbreakPD2 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=5E9 TOX=2.0000E-6 RG=5 RB=1.000E-3 KP=1E-6) .MODEL MbreakPD3 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=5E9 TOX=2.000E-6 RG=5 RB=1.000E-3 KP=1E-6 ) 6
M7 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M8 MbreakND M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 2u W = 1.8m R1 200k 10 2 8 R2 200 R3 200 9 12 5 3 V1 0.006 IN- V2 0.099 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 6u W = 1.7m M10 MbreakND1 L = 6u W = 2.5m M1 MbreakPD3 L = 6u W = 2.6m M2 MbreakPD2 L = 6u W = 2.6m 66 7 M15 MbreakPD1 L = 2u W = 50m 1111 C1 0.9p 7

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Device Modeling of CMRR

  • 1. Device Modeling of CMRR 18SEP2020 Tsuyoshi Horigome 1
  • 2. M7 MbreakND M8 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 6u W = 3.28m R1 200k 10 2 8 R2 2MEG R3 2MEG 9 12 5 3 V1 0.03 IN- V2 0.045 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 6u W = 5u M10 MbreakND1 L = 6u W = 5u M1 MbreakPD3 L = 6u W = 25m M2 MbreakPD2 L = 6u W = 25m 66 7 M15 MbreakPD1 L = 6u W = 78.5m 1111 C1 0.5p .MODEL MbreakPD3 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.148E9 TOX=2.000E-6 RG=5 RB=1.000E-3 KP=1E-6 ) .MODEL MbreakPD2 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.50E9 TOX=2.0000E-6 RG=5 RB=1.000E-3 KP=1E-6) .model MbreakND2 NMOS ( LEVEL=3 VTO=0 RS=10.000E-3 RD=10.000E-3 + RDS=1.0000E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 *+ CBD=2.35p ;23.5E-10 + KP=10E-6) 2
  • 3. CMRR 70dB M7 MbreakND M8 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 6u W = 3.28m R1 200k 10 2 8 R2 2MEG R3 2MEG 9 12 5 3 V1 0.03 IN- V2 0.045 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 6u W = 5u M10 MbreakND1 L = 6u W = 5u M1 MbreakPD3 L = 6u W = 25m M2 MbreakPD2 L = 6u W = 25m 66 7 M15 MbreakPD1 L = 6u W = 78.5m 1111 C1 0.5p .model MbreakND1 NMOS (LEVEL=3 L=6u W=5u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=20E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6) .model MbreakND2 NMOS ( LEVEL=3 VTO=0 RS=10.000E-3 RD=10.000E-3 + RDS=1.0000E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 *+ CBD=30p ;23.5E-10 + KP=10E-6) .MODEL MbreakPD2 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.50E9 TOX=2.0000E-6 RG=5 RB=1.000E-3 KP=1E-6) .MODEL MbreakPD3 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.148E9 TOX=2.000E-6 RG=5 RB=1.000E-3 KP=1E-6 ) 3
  • 4. CMRR 51.53dB M7 MbreakND M8 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 6u W = 3.28m10 R1 200k 2 8 R2 200 R3 200 9 12 5 3 V1 0.03 IN- V2 0.045 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 6u W = 5u M10 MbreakND1 L = 6u W = 5u M1 MbreakPD3 L = 6u W = 5m M2 MbreakPD2 L = 6u W = 5m 66 7 M15 MbreakPD1 L = 6u W = 78.5m 1111 C1 0.23p .model MbreakND1 NMOS (LEVEL=3 L=6u W=5u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=20E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6) .model MbreakND2 NMOS ( LEVEL=3 VTO=0 RS=10.000E-3 RD=10.000E-3 + RDS=1.0000E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 *+ CBD=30p ;23.5E-10 + KP=10E-6) .MODEL MbreakPD2 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.50E9 TOX=2.0000E-6 RG=5 RB=1.000E-3 KP=1E-6) .MODEL MbreakPD3 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=1.148E9 TOX=2.000E-6 RG=5 RB=1.000E-3 KP=1E-6 ) 4
  • 5. M7 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M8 MbreakND M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 6u W = 3.28m R1 200k 10 2 8 R2 200 R3 200 9 12 5 3 V1 0.03 IN- V2 0.045 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 10u W = 5u M10 MbreakND1 L = 10u W = 5u M1 MbreakPD3 L = 6u W = 700u M2 MbreakPD2 L = 6u W = 700u 66 7 M15 MbreakPD1 L = 6u W = 78.5m 1111 C1 0.3p .model MbreakND NMOS ( LEVEL=3 L=6u W=3.2u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=10E6 TOX=2.0E-6 RG=5 RB=1.0000E-3 + KP=10E-6) .model MbreakND1 NMOS (LEVEL=3 L=6u W=5u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=6E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6 5
  • 6. VTO=-0.25_PD1 M7 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M8 MbreakND M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 4u W = 17m R1 200k 10 2 8 R2 200 R3 200 9 12 5 3 V1 0.07 IN- V2 0.099 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 10u W = 700u M10 MbreakND1 L = 10u W = 700u M1 MbreakPD3 L = 6u W = 505u M2 MbreakPD2 L = 6u W = 895u 66 7 M15 MbreakPD1 L = 2u W = 50m 1111 C1 0.35p .model MbreakND NMOS ( LEVEL=3 L=6u W=3.2u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=10E6 TOX=2.0E-6 RG=5 RB=1.0000E-3 + KP=10E-6) .model MbreakND1 NMOS (LEVEL=3 L=6u W=5u VTO=0 RS=10.000E-3 + RD=10.000E-3 RDS=1.45E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6 .model MbreakND2 NMOS ( LEVEL=3 VTO=0 RS=10.000E-3 RD=10.000E-3 + RDS=1.0000E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 *+ CBD=30p ;23.5E-10 + KP=10E-6) .model MbreakPD PMOS ( LEVEL=3 L=6u W=19.5u VTO=0 RS=10.000E-3 + RD=10.00E-3 RDS=1.00E9 TOX=2.0000E-6 RG=5 RB=1.0000E-3 + KP=10E-6 ) .MODEL MbreakPD1 PMOS (LEVEL=3 VTO=-0.25 RS=10.000E-3 RD=10.000E-3 + RDS=1.00E6 TOX=2.0000E-6 RG=5 RB=1.0000E-3 KP=200E-6 ) .MODEL MbreakPD2 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=5E9 TOX=2.0000E-6 RG=5 RB=1.000E-3 KP=1E-6) .MODEL MbreakPD3 PMOS (LEVEL=3 VTO=0 RS=10.000E-3 RD=10.00E-3 + RDS=5E9 TOX=2.000E-6 RG=5 RB=1.000E-3 KP=1E-6 ) 6
  • 7. M7 MbreakND M3 MbreakPD M4 MbreakPD M14 MbreakPD M13 MbreakND1 M8 MbreakND M12 MbreakND M6 MbreakPD M16 MbreakND2 L = 2u W = 1.8m R1 200k 10 2 8 R2 200 R3 200 9 12 5 3 V1 0.006 IN- V2 0.099 VDD VSS OUT R5 0.6E12 IN+ R4 1.8E12 1 4 M11 MbreakND M5 MbreakPD M9 MbreakND1 L = 6u W = 1.7m M10 MbreakND1 L = 6u W = 2.5m M1 MbreakPD3 L = 6u W = 2.6m M2 MbreakPD2 L = 6u W = 2.6m 66 7 M15 MbreakPD1 L = 2u W = 50m 1111 C1 0.9p 7