Device Modeling ReportCOMPONENTS:THYRISTORPART NUMBER:3P6MHMANUFACTURER: NEC                 Bee Technologies Inc.  All Ri...
DIODE MODEL Pspice model                                        Model description  Parameter       IS         Saturation C...
IG-VT CharacteristicEvaluation CircuitSimulation result                                                           Simulati...
ITM-VTM CharacteristicEvaluation CircuitSimulation result                                                         Simulati...
Holding Characteristic (IH)Evaluation CircuitSimulation result                                                          Si...
Switching Time CharacteristicEvaluation CircuitSimulation result                                                  Simulati...
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SPICE MODEL of 3P6MH in SPICE PARK

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SPICE MODEL of 3P6MH in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 3P6MH in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS:THYRISTORPART NUMBER:3P6MHMANUFACTURER: NEC Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. IG-VT CharacteristicEvaluation CircuitSimulation result SimulationComparison Table Measurement Simulation % Error IGT (mA) 0.2(max) 0.197584 1.2080 VGT (V) 0.8(max) 0.786130 1.7338 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. ITM-VTM CharacteristicEvaluation CircuitSimulation result SimulationComparison Table At ITM=10A Measurement Simulation % Error VTM(V) 1.6(max) 1.5522 2.9875 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Holding Characteristic (IH)Evaluation CircuitSimulation result SimulationComparison Table VDM=24V,ITM=10A Measurement Simulation % Error IH(mA) 5(max) 4.9663 0.6740 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Switching Time CharacteristicEvaluation CircuitSimulation result SimulationComparison Table Measurement Simulation %Error Toff(us) 80 80.670 -0.8375 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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