SPICE MODEL of 2SK2563 (Standard+BDS Model) in SPICE PARK

372 views

Published on

SPICE MODEL of 2SK2563 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Published in: Technology
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
372
On SlideShare
0
From Embeds
0
Number of Embeds
58
Actions
Shares
0
Downloads
2
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of 2SK2563 (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: 2SK2563MANUFACTURER: ShindengenREMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. POWER MOSFET MODELPspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Transconductance CharacteristicCircuit Simulation ResultComparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.200 0.850 0.860 1.176 0.500 1.380 1.360 -1.449 1.000 1.950 1.910 -2.051 2.000 2.700 2.680 -0.741 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Vgs-Id CharacteristicCircuit Simulation result 10A 1.0A 100mA 0V 1V 2V 3V 4V 5V 6V 7V 8V 9V I(V2) V_V1Evaluation circuit V2 0V dc V3 V1 10 Vd c 25 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.100 3.400 3.431 0.918 0.200 3.600 3.568 -0.892 0.500 3.850 3.839 -0.291 1.000 4.100 4.145 1.107 2.000 4.600 4.582 -0.391 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Id-Rds(on) CharacteristicCircuit Simulation result 2.0A 1.0A 0A 0V 2.5V 5.0V I(V2) V_V3Evaluation circuit V2 0V dc V3 V1 10 Vd c 25 Vd c 0Simulation Result ID=2A, VGS=10V Measurement Simulation Error (%) R DS (on) 1.800  1.800  0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Gate Charge CharacteristicCircuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n V(W1:3) Time*10msEvaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u U5 I2 TF = 10n W1 2SK2563S 4Adc TR = 10n + TD = 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 200Vdc 0Simulation Result VDD=200V Measurement Simulation Error (%) ,ID=4A Qgs 3.000 nC 3.018 nC 0.600 Qgd 7.500 nC 7.556 nC 0.747 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Capacitance Characteristic (Vds vs. Cbd) Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 2.000 145.000 144.000 -0.690 5.000 100.000 101.400 1.400 10.000 75.000 75.180 0.240 20.000 56.000 55.400 -1.071 50.000 37.000 37.600 1.622 100.000 28.000 27.400 -2.143 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Switching Time CharacteristicCircuit Simulation result 12V VDS =153 (V) VGS = 10V 8V 4V 0V 4.98us 5.00us 5.02us 5.04us 5.06us 5.08us 5.10us V(2) V(3)/15.3 TimeEvaluation circuit 3 V3 L1 0Vdc 30nH R1 L2 RL 2 75 50 30nH V1 = 0 U3 V1 2SK2563S V2 = 20 VDD TD = 5u R2 TR = 6n TF = 7n 50 153 PW = 10u PER = 1000u 0 0 0 0Simulation Result ID=2A, VDD=153V Measurement Simulation Error(%) VGS=0/10V ton 40.00[max.] ns 39.88 ns -0.30 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Output CharacteristicCircuit Simulation result 4.0A 5.0V 2.0A 4.5V 4.0V VGS=3.5V 0A 0V 25V 50V I(V3) V_V2Evaluation circuit V3 0Vdc V1 V2 10Vdc 25Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Forward Current Characteristic of Reverse DiodeCircuit Simulation Result 2.0A 1.0A 0A 0V 1.0V 2.0V I(V2) V_V3Evaluation Circuit R1 0.0 1m V2 0V dc V3 0V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.010 0.558 0.561 0.538 0.020 0.586 0.586 -0.004 0.050 0.622 0.620 -0.322 0.100 0.652 0.647 -0.767 0.200 0.678 0.677 -0.086 0.500 0.726 0.729 0.413 1.000 0.784 0.787 0.383 2.000 0.882 0.880 -0.227 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 8us 10us 12us 14us 16us 18us 20us 22us 24us 26us I(R1) TimeEvaluation Circuit R1 50 V1 = {-9.43} V1 V2 = {10.6} TD = 0.576u TR = 10n TF = 10n PW = 15u PER = 100u 0 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 1.520 us 1.521 us 0.066 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. Reverse Recovery Characteristic ReferenceTrj=1.52(us)Trb=0.88(us)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

×