SPICE MODEL of 2SJ654 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SJ654
MANUFACTURER: SANYO
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
10
Measurement
Simulation
8
6
gfs(S)
4
2
0
0.0 2.0 4.0 6.0 8.0 10.0
Drain Current ID (-A)
Comparison table
gfs(S)
-Id(A) Error (%)
Measurement Simulation
1.0000 3.100 3.199 3.20
2.0000 4.350 4.467 2.70
5.0000 6.750 6.883 1.97
10.0000 9.400 9.465 0.69
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3

4. Vgs-Id Characteristic
Circuit Simulation result
-16A
-14A
-12A
-10A
-8A
-6A
-4A
-2A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V -6.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
V2
U1
2SJ654 -10
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Comparison Graph
Circuit Simulation Result
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
1 2.650 2.596 -2.04
2 2.900 2.857 -1.50
5 3.400 3.384 -0.48
10 4.000 3.994 -0.15
12 4.200 4.197 -0.08
14 4.400 4.385 -0.35
16 4.600 4.561 -0.85
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. Rds(on) Characteristic
Circuit Simulation result
-4.0A
-3.5A
-3.0A
-2.5A
-2.0A
-1.5A
-1.0A
-0.5A
0A
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1 0Vdc
2SJ654
V1
-10
0
Simulation Result
ID=-4A, VGS=-10V Measurement Simulation Error (%)
R DS (on) mΩ 240.000 240.000 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
0 5n 10n 15n 20n
V(W1:4)
Time*1mA
Evaluation circuit
U1
ION = 0uA 2SJ654 I2
I1 = 0 IOFF = 1mA D2 8
I2 = 1m W Dbreak
TD = 0 I1 -
TR = 5n +
TF = 5n VDD
PW = 600u W1
PER = 1000u
-50
0
Simulation Result
VDD=-50V,ID=-8A
Measurement Simulation Error (%)
,VGS=-10V
Qgs nC 3.800 3.790 -0.28
Qgd nC 4.500 4.509 0.20
Qg nC 20.000 16.286 -18.57
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VSD(V) Error(%)
Measurement Simulation
0 110.000 110.000 0.000
5 30.000 29.735 -0.883
10 18.500 18.478 -0.119
15 13.500 13.723 1.652
20 11.000 11.047 0.427
25 9.500 9.312 -1.979
30 8.000 8.087 1.088
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us
V(U1:G) V(U1:D)/5
Time
Evaluation circuit
L2 RL
50nH 12.5
R1 L1
U1
PER = 20u 2SJ654 VDD
PW = 10u 30nH -51Vdc
TF = 5n 50 R2
TR = 5n 50
TD = 1u
V2 = 20 V2
V1 = 0
0
Simulation Result
ID=-4A, VDD=-50V
Measurement Simulation Error(%)
VGS=0/-10V
td(on) ns 12.000 11.998 -0.02
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
-20A
-18A
-10, -8 -6
-16A
-14A
-12A
-10A -4
-8A
-6A
-4A
VGS=-3V
-2A
0A
0V -1V -2V -3V -4V -5V -6V -7V -8V -9V -10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V2
U1
2SJ654
-10
V1
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0V 0.3V 0.6V 0.9V 1.2V 1.5V
I(Vsense)
V_VDS
Evaluation Circuit
Vsense
0Vdc
VDS U1
2SJ654
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
10.00
Drain reverse current IDR (-A)
1.00
0.10
0.01
0 0.3 0.6 0.9 1.2 1.5
Source - Drain voltage VSD (-V)
Simulation Result
VSD(-V)
IDR(-A) %Error
Measurement Simulation
0.01 0.6050 0.6036 -0.24
0.02 0.6250 0.6246 -0.07
0.05 0.6500 0.6526 0.40
0.1 0.6750 0.6743 -0.11
0.2 0.6950 0.6968 0.25
0.5 0.7300 0.7292 -0.11
1 0.7600 0.7581 -0.24
2 0.7950 0.7945 -0.06
5 0.8600 0.8626 0.30
10 0.9400 0.9380 -0.22
20 1.0500 1.0505 0.05
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v U1
TD = 40ns 2SJ654
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 26.000 26.125 0.48
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Reverse Recovery Characteristic Reference
Measurement
Trj=26.00(ns)
Trb=28.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-8mA
-6mA
-4mA
-2mA
0A
0V -10V -20V -30V -40V -50V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
V1
U1
2SJ654
0Vdc R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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