SPICE MODEL of 1MB05-120 (Professional+FWDS Model) in SPICE PARK

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SPICE MODEL of 1MB05-120 (Professional+FWDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is
http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 1MB05-120 (Professional+FWDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Insulated Gate Bipolar Transistor (IGBT)PART NUMBER: 1MB05-120MANUFACTURER: Fuji Electric* REMARK: Free-Wheeling Diode (Standard Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 1
  2. 2. Transfer CharacteristicsCircuit Simulation result 14A 12A 10A 8A 6A 4A 2A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGEEvaluation circuit U1 1MB05-120 VCE 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 2
  3. 3. Comparison GraphSimulation resultComparison tableTest condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.350 8.000 8.082 1.02 6.600 10.000 9.970 -0.30 13.400 12.000 12.037 0.31 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 3
  4. 4. Fall Time CharacteristicsCircuit Simulation result 5.0A 4.5A 4.0A 3.5A 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 0A 2.0us 3.0us 4.0us 5.0us 6.0us I(RL) TimeEvaluation circuit RL Rg U1 119.5 1MB05-120 V1 = -15 V2 = 15 330 TD = 0 V1 TR = 10n VCE TF = 10n 600Vdc PW = 3u PER = 20u 0Test condition: IC=5 (A), VCC=600 (V) Parameter Unit Measurement Simulation %Error tf us 0.200 0.201 0.357 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 4
  5. 5. Gate Charge CharacteristicsCircuit Simulation result 25V 20V 15V 10V 5V 0V 0 20n 40n 60n 80n 100n V(W1:1) Time*1mAEvaluation circuit V2 0 U1 I1 1MB05-120 D2 Dbreak 5 I1 = 0 W1 I2 = 1m + TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 600 PW = 5m ION = 0A 0Test condition: VCC=600 (V), IC=5 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 12.000 12.000 0.000 Qgc nc 26.000 25.565 -1.673 Qg nc 55.000 55.623 1.133 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 5
  6. 6. Saturation CharacteristicsCircuit Simulation result 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(IC) V(IC:-)Evaluation circuit U1 1MB05-120 IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 6
  7. 7. Comparison GraphSimulation resultComparison tableTest condition: VGE =15 (V) VF (V) IF(A) %Error Measurement Simulation 2.0 2.000 2.01 0.35 4.0 2.430 2.41 -0.71 6.0 2.800 2.81 0.35 8.0 3.200 3.20 0.12 10.0 3.600 3.60 -0.09 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 7
  8. 8. Output CharacteristicsCircuit Simulation result 10A 20V 15V 12V 8A 10V 6A 4A 2A VGE=8V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(U1:C) V_VCEEvaluation circuit U1 VCE 1MB05-120 5Vdc 15Vdc VGE 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 8

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