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IMS-2010 Presentation

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IMS-2010 Presentation

  1. 1. IMS-2010, Anaheim, CA, USA
  2. 2. To develop integrated, simple to use SMT packaged Customer friendly parts that eliminates complex and expensive chip Assembly and related performance degradation. IMS-2010
  3. 3.  Laminate Package  Chip Scale Package  High performance at frequencies from DC-mmW  Eliminates one assembly step of die attach and wire bonding as complete package is processed with IC.  Virtually eliminates parasitic associated with plastic, lead frames and bond wires & provides true air cavity  Enables ultra-thin IC substrates to dissipate heat and whole package is thinner than current solutions so much better for thermal dissipation for PAs.  Finished GaAsCap wafer can be RF probed as accurately as ‘on wafer’ probing and so suitable for large scale manufacturing test and does not need any PCB or custom test fixture/contactor board for testing.  Estimated cost is $0.10/mm2) even at mmW frequencies.  Built to specifications, Uses Rogers 4350 material for base and lid IMS-2010
  4. 4. x2 +20dBm x2 4*LO=-35dBm RF=-17dBm NF=12dBm IP3=+4dBm 4*LO=-25dBm RF=-7dBm NF=17dBm IP3=+14dBm 4*LO=-30dBm RF=-12dBm NF=17.8dBm IP3=+8.5dBm 4*LO=-20dBm RF=-2dBm NF=17.9dBm IP3=+18dBm 4*LO=-25dBm RF=-7dBm NF=18dBm IP3=+12dBm 4*LO=-15dBm RF=+5dBm NF=18dBm IP3=+18.5dBm 4*LO=+7dBm RF=+25dBm NF=18dBm IP3=+35dBm -6to0dBm IF=-5dBm 4*LO@RF -35dBm 7-12GHz 37-44GHz Transmitter Specification Parameter Unit Specification RF Frequency GHz 37-44 LO Frequency GHz 7.5-11.5 LO Power dBm ≤ 0 IF Frequency GHz DC-3.0 Conversion Gain dB 30 Gain Dynamic Range dB 15(min.) [>30 desired] C/I3 dBc <29 NF dB <18 & 27 (Min./Max. Gain) Side Band Rejection dB >15 4*LO-RF Leakage dBc <-15 IMS-2010
  5. 5. IF1 IF2 Balun Balun RF LO Parameter Unit Spec. LO Frequency GHz 17-23 IF Frequency GHz DC-5 Conversion Gain dB 10 Gain Dynamic Range dB 24 NF dBm 17/23 Input IP3 dBm +7/+16 LO Power dBm 20 2*LO Leakage dBc 10 S.B. Suppression dBc 15 RL dB 10 Current (5V) mA 300 Diesize:2.65x3x0.1mm IMS-2010
  6. 6. IMS-2010
  7. 7. -22 -18 -14 -10 -6 -2 2 6 10 14 18 40.5 41 41.5 42 42.5 43 43.5 ConversionGain(dB) RF Frequency (GHz) Max. G. Min. G. 0 2 4 6 8 10 12 14 16 18 20 22 24 40.5 41 41.5 42 42.5 43 43.5 IIP3(dB) RF Frequency (GHz) Max. G. Min. G. -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 24.5 26.5 28.5 30.5 32.5 34.5 36.5 38.5 40.5 42.5 44.5 C.G.(dB),OIP3(dBm)&SSBSupp. (dBc) RF Frequency (GHz) C.G. OIP3 SSB Supp. -40 -35 -30 -25 -20 -15 -10 -5 0 40.5 41.0 41.5 42.0 42.5 43.0 43.5 Power@RF-Port(dBm) RF Frequency (GHz) RFout 2*LO@RF-Port IMS-2010
  8. 8. Design Parameters Specifications: Measured Must Want BW (GHz) 37.5 – 43.5 37 - 45 37 -44 Gain (dB) 20 22 20.5 P-1dB (dBm) 29 30 29 OIP3 [dBm] @ 12(dBm) SCL 35 37 35 RLin (dB) 8 10 7 RLout (dB) 8 10 8 DC Power 5V, 0.8A 5V, 0.8A 5V, 0.7A ESD 50V MM, 250HBM 50V MM, 250HBM Block Diagram Die size: 2.65x2x0.1mm IMS-2010
  9. 9. 0 5 10 15 20 25 30 35 37 38 39 40 41 42 43 44 Frequency [GHz] Gain,P-1,P-3,andPAE Gain [dB] P1[dBm] PAE @P-1 P-3[dBm] PAE @P-3 0 5 10 15 20 25 30 35 40 45 37 38 39 40 41 42 43 44 Frequency [GHz] OIP3[dBm] -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 IM3Level[dBc] OIP3_L OIP3_H IM3L(dBc) IM3H(dBc) Frequency : 38 – 44 GHz Gain : 20.5dB +/- 2 dB Output Power @P-1 : 29 dBm Psat (-3dB) : 29.5 dBm OIP3 @Po=12dBm SCL : 35 dBm RL(in) : -7 dB RL(out) : -8 dB Bias Supply : 5V, 700mA Chip Size (mm) : 2.65 x 2 x 0.1 Measured IMD3 @ Po=+12dBm SCL Measured Gain, S11, and S22 Measured P1, gain, and PAE IMS-2010
  10. 10. Power Amplifier Base (°c) ICmax (°c) Vd Id (mA) P(watts) Δ (°c) θjc S/N #4 20 57.3 5 700 3.5 37.3 10.7 Thermal Resistance 10.7 Deg C / W
  11. 11. VDD RF 90-deg Hybrid In- phase Divider IF 90-deg Hybrid IF1 IF2 External Diplexer Diplexer LNA Sub-Harmonic IRM LO Parameter Unit Spec. RF Frequency GHz 37.5-43.5 LO Frequency GHz 17-23 IF Frequency GHz DC-5 Conversion Gain dB 14 Input IP3 dBm -6 LO Power dBm 15 Noise Figure dBm 4.8 Return Loss dB -10 Image Rejection dB 15 Current (3V) mA 95 Die size: 2.65x2x0.1mm IMS-2010
  12. 12. 2 4 6 8 38 39 40 41 42 43 44 Frequency (GHz) NoiseFigure(dB) Vlna=3V Vlna=3.5V Vlna=4V 0 5 10 15 20 40 40.5 41 41.5 42 42.5 43 43.5 Frequency (GHz) ConversionGain(dB) Vlna=3.5V Vlna=4V Vlna=3V -15 -10 -5 0 5 40 40.5 41 41.5 42 42.5 43 43.5 Frequency (GHz) IIP3(dBm) Vdd=3V Vdd=3.5V Vdd=4V 0 5 10 15 20 25 37 38 39 40 41 42 43 44 Frequency (GHz) IRR(dB) Vlna=3V Vlna=4V IMS-2010
  13. 13. F1 F2 Amp Diff. Active Balun Amp LO/4 LO/2 Fin=10.5GHz -10 -5 0 5 10 15 20 25 -8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 Input Power (dBm) Pout[1H,2H,3H,4H](dBm) 1H 2H 3H 4H Fin=11.5 GHz -10 -5 0 5 10 15 20 25 -8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 Input Power (dBm) Pout[1H,2H,3H,4H](dBm) 1H 2H 3H 4H IMS-2010
  14. 14. -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 25 30 35 40 Frequency (GHz) S21(dB) 1.0mm x 0.5mm x 0.1mm IMS-2010
  15. 15. Parameter Unit x2 Up- Converter Power Amp Detector Down Converter Pout (2H) dBm +21 n/a n/a n/a n/a Gain dB n/a 11 20 -0.75 15 Gain control dB n/a 24 n/a n/a n/a LO Power dBm n/a +20 n/a n/a +15 2x LO Leakage dBc n/a 15 n/a n/a n/a Return Loss dB n/a -10 -10 -15 -10 OIP3 dBm n/a +22 +38 +50 +10 P-1dB dBm n/a +15 +30 +40 +5 Image Rejection dB n/a 15 n/a n/a `5 Fundamental Supp. dBc 20 n/a n/a n/a n/a 3rd Harmonic Supp. dBc 20 n/a n/a n/a n/a 4th Harmonic Supp. dBc 20 n/a n/a n/a n/a Voltage V 5 5 5 1.8 3 Current mA 210 300 700 1 70 IMS-2010

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