Cd2SnO4
ABSTRACT
(CdO, Cd2SnO4)(300 °C)(400,500)°C((Cd(CH3COO)2.2H2O))((SnCl2.2H2O))(XRD)(Polycrystalline)(Cubic)(CdO)(201.6 Å)(Cd2SnO4)(26...
The Properties Of Thin Films
(Cadmium Oxide (CdO))(n-Type)(TCOʼs)(Face Center Cubic (F.C.C.))(CdO)
Cadmium Stannate (Cd2SnO4(Cd2SnO42.06-3)eVCd2SnO4n-typeOrthorhombic Structure.
Aim of Research(CdO)Cd(CH3COO)2.2H2O)(5%)(Cd2SnO4)(95%)(5%)
Experimental Part
(Solution Preparation)(1)(CdO)Cd(CH3COO)2.2H2O)(266.52)gm/mol0.1 mol/L2.6652 g100ml)Magnetic Stirrer(15-20)minM = (Wt / MW...
(CdO.Cd2SnO4)-1-Substrate Temperature-(300°C)2-Vertical Distance-(29.5 0.5cm)3-Average Spryer-(8 ml/min)4-Average Time Spr...
measurements
SHIMADZU- 6000TypeCu- KαTarget1.54060Wave Length40 kVVoltage30 mACurrent20o-60oRange of (2θ)5 deg/ minSpeed(2)(X-Ray Diffr...
Results and Discussions
Structural Properties(XRD)(Cd2SnO4,CdO)(Polycrystalline)(Cubic)
(CdO)(220),(200),(111)(111)(c),(b)
(5%)(300°C)(CdO)(a)(XRD)(2θ )(400°C)(131),(130),(001)(b)(500 C)(121)(c)(Cd2SnO4)
1-(Interatomic Spacing (d)(d)2dsinθ = nλ(d)(CdO)(d)(Cd2SnO4)dÅ(Theory.)dÅ(Measured)2θ(hkl)TemperatureT(°C)Type ofthin film...
2-(Lattice Constant (a))(a)(ASTM)1/d2 = (h2+k2+l2)/a2(CdO)(4.7066Å)(Cd2SnO4)(9.0663Å)aÅ (Measured)(hkl)TemperatureT(°C)Typ...
3-(Grain Size (G.s))(G.s)(CdO)(Cd2SnO4)G.s Åβ(FWHM)(deg.)2θ(hkl)TemperatureT(°C)Type of thinfilm201.6460.456732.9353(111)3...
Some Structural ParametersCalculation
Tc(hkl)TemperatureT(°C)Type of thinfilm2.0979(111)300CdO0.6084(200)0.29371(220)1.6854(111)4001.0787(200)0.23596(220)1.3889...
2-(Dislocation Density ( ))δ = 1/ (G.s) 2(CdO)( )(Cd2SnO4)×10-5Line/Å2TemperatureT(°C)Type of thinfilm2.4564300CdO1.975140...
3-(Number of Crystals (M)M=t/ (G.s) 3(CdO)(Cd2SnO4)4-Number of Layers (NL)NL=t/G.s(CdO)(Cd2SnO4)NLM/Å2TemperatureT(°C)Type...
5-Integral Breadth (∆))(XRD)∆=Area/Imax(∆)(β)(Δ)βShapeFactor (Φ)IntegralBreadth(∆)(deg.)β(FWHM)(deg.)TemperatureT(°C)Type ...
Optical Properties(Cd2SnO4,CdO)
Transition (T %)(300-900)nm(a)(CdO)(300°C)(300nm)(900nm)(60%)(c),(b)
(88%)(900)nm(a)(b)Transmittance(T%)Wavelength λ(nm)(a)(Cd2SnO4)(72%)(900)nm(70%)(500)°C(b)(Cd2SnO4)
Absorption (A)(a)(900nm)(c),(b)
(Cd2SnO4)(b,a)
(α)(α > 104 cm-1)(a)(CdO)(CdO)(c),(b)
(Cd2SnO4)(b),(a)(300)°C
(Cd2SnO4, CdO)-(αhf)2 = B2 ( hf – Eg )(a)(CdO)(2.31)eVbc
(a)(b)(c)(a)(3.3) eV(b),(c)(Cd2SnO4)
Reflection Measurement(R)R +T+A=1(a)(CdO)(c),(b)
(Cd2SnO4)(b),(a)
Extinction Coefficient Measurement(Kₒ)(CdO)Kₒ= αλ/4π(a)(CdO)(c),(b)
(b),(a)(Cd2SnO4)
Refractive Index Measurement(nₒ)n={(1+R)2 / (1-R)2- (Ko2+1)}1/2+(1+R) / (1-R)(a)(CdO)(c),(b)
(b),(a)(Cd2SnO4)
Dielectric Constant Measurement (ξ)ξ1ξ2ξ1 = no2- ko2ξ2 = 2 no ko
(RealPart of Dielectric Constant (ξ1))(a)(1.38-2.2) eV(2.2) eV(CdO)(c),(b)
(c),(b)
Imaginary Part of DielectricConstant (ξ2)(a)(1.38-2.4)eV(CdO)(c),(b)
(Cd2SnO4)(b),(a)
Conclusion)1-CdOCd:5%Sn300°CCd2SnO4500,400°C2-3-CdOCd2SnO44-(CdO)(7-60) %(300-900) nm(8.5-80)%(300-900) nm500°C5-(22-88) %...
7-CdO,8-Cd2SnO4,Future work1-(CdO)CdxSnO1-x2-CdxSnO1-x3-Cd2SnO4, CdO4-Cd2SnO4, CdO5-Cd2SnO4
   Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
   Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
   Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
   Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
   Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
   Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
   Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
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Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية

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Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية
by: Thikra Abbas Mujbil Al- Hilfi, ذكرى عباس مجبل الحلفي
Supervised By: prof. Sabria Alioui

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Cd2SnO4 دراسة تأثير التلدين على الخواص التركيبية والبصرية لأغشية

  1. 1. Cd2SnO4
  2. 2. ABSTRACT
  3. 3. (CdO, Cd2SnO4)(300 °C)(400,500)°C((Cd(CH3COO)2.2H2O))((SnCl2.2H2O))(XRD)(Polycrystalline)(Cubic)(CdO)(201.6 Å)(Cd2SnO4)(268.3 Å)(CdO)(G.s)(δ)(d)(a)(Cd2SnO4)(300-900)nm(CdO)(60%)(900 nm)(2.31 eV)(Cd2SnO4)(72%)(900 nm)(3.1 eV)(Cd2SnO4,CdO)
  4. 4. The Properties Of Thin Films
  5. 5. (Cadmium Oxide (CdO))(n-Type)(TCOʼs)(Face Center Cubic (F.C.C.))(CdO)
  6. 6. Cadmium Stannate (Cd2SnO4(Cd2SnO42.06-3)eVCd2SnO4n-typeOrthorhombic Structure.
  7. 7. Aim of Research(CdO)Cd(CH3COO)2.2H2O)(5%)(Cd2SnO4)(95%)(5%)
  8. 8. Experimental Part
  9. 9. (Solution Preparation)(1)(CdO)Cd(CH3COO)2.2H2O)(266.52)gm/mol0.1 mol/L2.6652 g100ml)Magnetic Stirrer(15-20)minM = (Wt / MWt). (100/V)(2)(Cd2SnO4)Cd(CH3COO)2.2H2O)(SnCl2.2H2O)(225.63)gm/mol(5%)(95%)(Cd:5%Sn)(300)°CCOOHCHOHCdO 322 2OHOHCdCOOCH 222 2.)3(HCLSnoCd 842OHOHSnClOHCdCOOCH 22222 2.2.)3(2
  10. 10. (CdO.Cd2SnO4)-1-Substrate Temperature-(300°C)2-Vertical Distance-(29.5 0.5cm)3-Average Spryer-(8 ml/min)4-Average Time Spryer-15secmin35-Air Pressure-(105 N/m2)
  11. 11. measurements
  12. 12. SHIMADZU- 6000TypeCu- KαTarget1.54060Wave Length40 kVVoltage30 mACurrent20o-60oRange of (2θ)5 deg/ minSpeed(2)(X-Ray Diffraction Analysis)oA(3)(The Optical Measurements)AbsorbanceTransmittance300–900nm)UV/VIS–SPECROPHOTOMETER/1800BIOTECH
  13. 13. Results and Discussions
  14. 14. Structural Properties(XRD)(Cd2SnO4,CdO)(Polycrystalline)(Cubic)
  15. 15. (CdO)(220),(200),(111)(111)(c),(b)
  16. 16. (5%)(300°C)(CdO)(a)(XRD)(2θ )(400°C)(131),(130),(001)(b)(500 C)(121)(c)(Cd2SnO4)
  17. 17. 1-(Interatomic Spacing (d)(d)2dsinθ = nλ(d)(CdO)(d)(Cd2SnO4)dÅ(Theory.)dÅ(Measured)2θ(hkl)TemperatureT(°C)Type ofthin film2.717362.71735732.9353(111)300CdO2.352462.352464538.2274(200)1.662761.6627655.1961(220)2.709562.70955933.0328(111)4002.346472.34647438.3288(200)1.659311.659312455.3206(220)2.709722.70971933.0308(111)5002.347492.34748838.3115(200)1.661491.661487155.242(220)2.726752.72672632.8186(111)300Cd:5%Sn2.361182.36143538.0808(200)1.669181.66912254.9659(220)3.302393.30175726.9776(001)400Cd2SnO42.867022.86702131.171(130)2.088742.24460643.2817(131)3.307283.30728626.937(001)5002.868412.86845331.1555(130)2.400792.40078837.429(121)2.093492.09348543.1786(131)
  18. 18. 2-(Lattice Constant (a))(a)(ASTM)1/d2 = (h2+k2+l2)/a2(CdO)(4.7066Å)(Cd2SnO4)(9.0663Å)aÅ (Measured)(hkl)TemperatureT(°C)Type of thinfilm4.706601(111)300CdO4.693094(111)4004.693371(111)5004.722827(111)300Cd:5%Sn9.066316(130)400Cd2SnO49.070844(130)500
  19. 19. 3-(Grain Size (G.s))(G.s)(CdO)(Cd2SnO4)G.s Åβ(FWHM)(deg.)2θ(hkl)TemperatureT(°C)Type of thinfilm201.6460.456732.9353(111)300CdO225.00120.464633.0328(111)400228.80030.402633.0308(111)500149.50380.615832.8186(111)300Cd:5%Sn268.32260.341731.171(130)400Cd2SnO4224.10760.409131.1555(130)500coskG.s
  20. 20. Some Structural ParametersCalculation
  21. 21. Tc(hkl)TemperatureT(°C)Type of thinfilm2.0979(111)300CdO0.6084(200)0.29371(220)1.6854(111)4001.0787(200)0.23596(220)1.3889(111)5000.9583(200)0.652778(220)1.37615(111)300Cd:5%Sn1.12844(200)0.49541(220)0.9913(001)400Cd2SnO41.3044(130)0.704(131)0.8657(001)5001.19403(130)1.10448(121)0.83582(131)
  22. 22. 2-(Dislocation Density ( ))δ = 1/ (G.s) 2(CdO)( )(Cd2SnO4)×10-5Line/Å2TemperatureT(°C)Type of thinfilm2.4564300CdO1.97514001.910245004.474300Cd:5%Sn1.38895400Cd2SnO41.99107500
  23. 23. 3-(Number of Crystals (M)M=t/ (G.s) 3(CdO)(Cd2SnO4)4-Number of Layers (NL)NL=t/G.s(CdO)(Cd2SnO4)NLM/Å2TemperatureT(°C)Type ofthin film9.91840.00024300CdO8.8890.00017564008.741250.0001750013.377590.000599300Cd:5%Sn7.4537130.000104400Cd2SnO48.9242840.000178500
  24. 24. 5-Integral Breadth (∆))(XRD)∆=Area/Imax(∆)(β)(Δ)βShapeFactor (Φ)IntegralBreadth(∆)(deg.)β(FWHM)(deg.)TemperatureT(°C)Type of thinfilm0.91340.50.4567300CdO0.84470.550.46464001.17980.4750.40265000.87970.70.6158300Cd:5%Sn0.91120.3750.3417400Cd2SnO40.90910.450.40915006-Shape Factor (Φ))Φ= β/∆
  25. 25. Optical Properties(Cd2SnO4,CdO)
  26. 26. Transition (T %)(300-900)nm(a)(CdO)(300°C)(300nm)(900nm)(60%)(c),(b)
  27. 27. (88%)(900)nm(a)(b)Transmittance(T%)Wavelength λ(nm)(a)(Cd2SnO4)(72%)(900)nm(70%)(500)°C(b)(Cd2SnO4)
  28. 28. Absorption (A)(a)(900nm)(c),(b)
  29. 29. (Cd2SnO4)(b,a)
  30. 30. (α)(α > 104 cm-1)(a)(CdO)(CdO)(c),(b)
  31. 31. (Cd2SnO4)(b),(a)(300)°C
  32. 32. (Cd2SnO4, CdO)-(αhf)2 = B2 ( hf – Eg )(a)(CdO)(2.31)eVbc
  33. 33. (a)(b)(c)(a)(3.3) eV(b),(c)(Cd2SnO4)
  34. 34. Reflection Measurement(R)R +T+A=1(a)(CdO)(c),(b)
  35. 35. (Cd2SnO4)(b),(a)
  36. 36. Extinction Coefficient Measurement(Kₒ)(CdO)Kₒ= αλ/4π(a)(CdO)(c),(b)
  37. 37. (b),(a)(Cd2SnO4)
  38. 38. Refractive Index Measurement(nₒ)n={(1+R)2 / (1-R)2- (Ko2+1)}1/2+(1+R) / (1-R)(a)(CdO)(c),(b)
  39. 39. (b),(a)(Cd2SnO4)
  40. 40. Dielectric Constant Measurement (ξ)ξ1ξ2ξ1 = no2- ko2ξ2 = 2 no ko
  41. 41. (RealPart of Dielectric Constant (ξ1))(a)(1.38-2.2) eV(2.2) eV(CdO)(c),(b)
  42. 42. (c),(b)
  43. 43. Imaginary Part of DielectricConstant (ξ2)(a)(1.38-2.4)eV(CdO)(c),(b)
  44. 44. (Cd2SnO4)(b),(a)
  45. 45. Conclusion)1-CdOCd:5%Sn300°CCd2SnO4500,400°C2-3-CdOCd2SnO44-(CdO)(7-60) %(300-900) nm(8.5-80)%(300-900) nm500°C5-(22-88) %(300-900) nm(15-70) %(300-900) nm500°C6-(CdO,Cd2SnO4) (α>104cm-1)
  46. 46. 7-CdO,8-Cd2SnO4,Future work1-(CdO)CdxSnO1-x2-CdxSnO1-x3-Cd2SnO4, CdO4-Cd2SnO4, CdO5-Cd2SnO4

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