Electrical Final Year 2014 Batch
PRACTICAL
SETUP
OF
POWER ELECTRONICS LAB
CONTENTS
1) SCR
2) TRAIC
3) GTO
4) BJT
5) IGBT
6) MOSFET
7) R-FIRING CKT
8) RC-FIRING CKT
9) UJT-FIRING CKT
SILICON CONTROLLED
RECTIFIER (SCR)
7000 v
5000 Amp
V-I Characteristics of SCR
APPLICATIONS OF SCR :-
• Speed control for motors
• Battery-charging regulator
• Temperature controller circuit
• Emergenc...
Triac
1200 V
1000 Amp
SYMBOL & LAYER DIAGRAM
V-I CHRACTERISTICS OF TRAIC
Applications of the TRIAC
 The TRIAC as a bidirectional thyristor has various
applications. Some of the popular applicati...
GATE TURN OFF THYRISTOR
(GTO)
5000 v
3000 Amp
CIRCUIT SYMBOL AND STRUCTURE OF GTO
V-I CHRATERISTICS OF GTO
GTO Applications
• Counters
• Pulse generators
• Oscillators
• Voltage regulators
Bipolar Junction Transistor
(BJT)
1400 v
400 Amp
LAYER DIAGRAM
V-I CHARACTERISTIC OF BJT
Insulated Gate Bipolar
Transistor (IGBT) 1200 v
500 Amp
Vertical cross section of an IGBT
V-I characteristics of an IGBT
APPLICATIONS:
 The IGBT is mostly used in high-speed switching devices. They have
switching speeds greater than those of ...
Metal Oxide
Semiconductor Field Effect
Transistor (MOSFET )
1000 v
50 Amp
Schematic construction of a MOSFET
V-I CHARATERISTIC OF MOSFET
Applications of Power Devices
R-FIRING CIRCUIT
R-C FIRING CIRCUIT
UJT TRIGRING CIRCUIT
UJT-Firing Circuit
&
Electronic Fan
Regulator
THE END
THANK YOU
Practical setup of power electronics lab  power semicondutor devices [ scr, mosfet, igbt, gto, traic,bjt ]
Practical setup of power electronics lab  power semicondutor devices [ scr, mosfet, igbt, gto, traic,bjt ]
Practical setup of power electronics lab  power semicondutor devices [ scr, mosfet, igbt, gto, traic,bjt ]
Practical setup of power electronics lab  power semicondutor devices [ scr, mosfet, igbt, gto, traic,bjt ]
Practical setup of power electronics lab  power semicondutor devices [ scr, mosfet, igbt, gto, traic,bjt ]
Practical setup of power electronics lab  power semicondutor devices [ scr, mosfet, igbt, gto, traic,bjt ]
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Practical setup of power electronics lab power semicondutor devices [ scr, mosfet, igbt, gto, traic,bjt ]

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Some common power devices are the power diode, thyristor, power MOSFET, and IGBT. The power diode and power MOSFET operate on similar principles to their low-power counterparts, but are able to carry a larger amount of current and are typically able to support a larger reverse-bias voltage in the off-state.

Structural changes are often made in a power device in order to accommodate the higher current density, higher power dissipation, and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e., non-integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor die.

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  • Power Electronics
  • Practical setup of power electronics lab power semicondutor devices [ scr, mosfet, igbt, gto, traic,bjt ]

    1. 1. Electrical Final Year 2014 Batch
    2. 2. PRACTICAL SETUP OF POWER ELECTRONICS LAB
    3. 3. CONTENTS 1) SCR 2) TRAIC 3) GTO 4) BJT 5) IGBT 6) MOSFET 7) R-FIRING CKT 8) RC-FIRING CKT 9) UJT-FIRING CKT
    4. 4. SILICON CONTROLLED RECTIFIER (SCR) 7000 v 5000 Amp
    5. 5. V-I Characteristics of SCR
    6. 6. APPLICATIONS OF SCR :- • Speed control for motors • Battery-charging regulator • Temperature controller circuit • Emergency-lighting system • Temperature control for electric hot plate • Dimmer switch for domestic lighting • Dimmer control for stage lighting.
    7. 7. Triac 1200 V 1000 Amp
    8. 8. SYMBOL & LAYER DIAGRAM
    9. 9. V-I CHRACTERISTICS OF TRAIC
    10. 10. Applications of the TRIAC  The TRIAC as a bidirectional thyristor has various applications. Some of the popular applications of the TRIAC are as follows: (i) In speed control of single-phase ac series or universal motors. (ii) In food mixers and portable drills. (iii) In lamp dimming and heating control. (iv) In zero-voltage switched ac relay.
    11. 11. GATE TURN OFF THYRISTOR (GTO) 5000 v 3000 Amp
    12. 12. CIRCUIT SYMBOL AND STRUCTURE OF GTO
    13. 13. V-I CHRATERISTICS OF GTO
    14. 14. GTO Applications • Counters • Pulse generators • Oscillators • Voltage regulators
    15. 15. Bipolar Junction Transistor (BJT) 1400 v 400 Amp
    16. 16. LAYER DIAGRAM
    17. 17. V-I CHARACTERISTIC OF BJT
    18. 18. Insulated Gate Bipolar Transistor (IGBT) 1200 v 500 Amp
    19. 19. Vertical cross section of an IGBT
    20. 20. V-I characteristics of an IGBT
    21. 21. APPLICATIONS:  The IGBT is mostly used in high-speed switching devices. They have switching speeds greater than those of bipolar power transistors.  Robot welding machine.  Uninterruptible Power Supply.  Motor control.
    22. 22. Metal Oxide Semiconductor Field Effect Transistor (MOSFET ) 1000 v 50 Amp
    23. 23. Schematic construction of a MOSFET
    24. 24. V-I CHARATERISTIC OF MOSFET
    25. 25. Applications of Power Devices
    26. 26. R-FIRING CIRCUIT
    27. 27. R-C FIRING CIRCUIT
    28. 28. UJT TRIGRING CIRCUIT
    29. 29. UJT-Firing Circuit & Electronic Fan Regulator
    30. 30. THE END THANK YOU

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