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An Easy to Use Approach to Thin Film Patterning:
     The isishape™ Process Technology

Ingo Koehler, Senior Manager R&D, ...
Structuring Solutions

                                     Strategic Intent:


                                     As an...
Table of Contents


             1   MOTIVATION

             2   TECHNOLOGY & PROCESSES

             3   CONCEPT & PERFO...
One Thing In Common……

                           Monitors OLEDs                         • Layer structuring of
          ...
Possibilities of Structuring

                    Photo Lithography
             • Apply of Photoresist                   ...
Table of Contents


             1   MOTIVATION

             2   TECHNOLOGY & PROCESSES

             3   CONCEPT & PERFO...
The isishape™ structuring process




                  Screen                                       Cleaning   Structured...
Printing Step: Screen Printing

                                      Screen Printer
                    Application Labor...
Etching Step: Heating


             Laboratory: Hot Plate                         Production: Belt Furnace




xx/xx/xxxx...
Cleaning Step: Rinsing

                   CLEANING WITHOUT ORGANIC DETERGENT


     •       DI water only
     •       Ac...
Table of Contents


             1   MOTIVATION

             2   TECHNOLOGY & PROCESSES

             3   CONCEPT & PERFO...
isishape™ Concept

                          PRINTABLE STRUCTURING SOLUTIONS


                               Functional a...
Selectivity is Possible

     • Different pastes used
                                 SiO2                           Meta...
isishape HiperEtch™ 04S

                   130 nm ITO / GLASS                                                 Key Feature...
isishape HiperEtch™ 04S


                130 nm ITO / GLASS                                                    Key Featur...
Surface Profile of Structured ITO

     •       ITO – Structuring on Plastic Substrate
              – isishape HiperEtch™...
isishape HiperEtch™ 06S

                                                                                   Key Features
 ...
isishape SolarEtch™ BES

                               80nm PE-CVD SiNx                                       Key Feature...
isishape SolarEtch™ BES



                                                                                   Diameter: 54...
isishape SolarEtch™ BRS

                  120nm SiO2 on c-Si                                                Key Features
...
isishape SolarEtch™ SiD

                                   Dispenser
                                     Dispenser
     ...
isishape SolarEtch™ SiD



                                               401   601   801 1001 1




                     ...
Table of Contents


             1   MOTIVATION

             2   TECHNOLOGY & PROCESSES

             3   CONCEPT & PERFO...
The isishape™
     Structuring Process


                                 Exhaust
                              Into air w...
Cross flow filtration for rinse water
     (as one possible process)


             + KOH for
             keeping pH     ...
Waste Water Analysis Results
               isishape HiperEtch™ 04S

                            100mg PASTE PER
         ...
Table of Contents


             1   MOTIVATION

             2   TECHNOLOGY & PROCESSES

             3   CONCEPT & PERFO...
Summary Display

             isishape HiperEtch™ concept
             shows many advantages in display applications:
    ...
Summary Solar

             isishape SolarEtch™ concept
             shows many advantages in Solar Cell production:
     ...
Final Remark / Q&A Session


                  ST
                       RU
                         CT
                  ...
xx/xx/xxxx   Editor: Presentation name here   Page 31
THANK YOU FOR YOUR ATTENTION.




xx/xx/xxxx         Editor: Presentation name here   Page 32
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Merck Chemicals - The Isishape Process Technology

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As an innovative and reliable partner of the photovoltaic and display industries we provide environmentally friendly structuring solutions for improved product performance and production speed.

Published in: Technology, Business
  • Bonjour ,

    je recherche des solutions chimiques chez merck pour faire des gravures chimiques sur ITO par voie humide dans un premier temps.

    Merci par avance

    F.OLIVIE
    Professeur Université paul sabatier Toulouse
    LAAS-CNRS
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Merck Chemicals - The Isishape Process Technology

  1. 1. An Easy to Use Approach to Thin Film Patterning: The isishape™ Process Technology Ingo Koehler, Senior Manager R&D, Structuring Solutions LC Division, Merck KGaA, Darmstadt / Germany
  2. 2. Structuring Solutions Strategic Intent: As an innovative and reliable partner of the photovoltaic and display industries we provide environmentally friendly structuring solutions for improved product performance and production speed. xx/xx/xxxx Editor: Presentation name here Page 2
  3. 3. Table of Contents 1 MOTIVATION 2 TECHNOLOGY & PROCESSES 3 CONCEPT & PERFORMANCE 4 ENVIRONMENTAL IMPACT 5 SUMMARY & CLOSING REMARKS xx/xx/xxxx Editor: Presentation name here Page 3
  4. 4. One Thing In Common…… Monitors OLEDs • Layer structuring of TVs semiconductors, passivation-, AR- coatings, TCOs LCD TVs • Sometimes Solar cells selectively! (no impact to the Touch layer underneath) Panels Flexible Displays xx/xx/xxxx Editor: Presentation name here Page 4
  5. 5. Possibilities of Structuring Photo Lithography • Apply of Photoresist isishape • Exposure (special Layout) Hiper Etch™ & SolarEtch™ • Developing EASY & FAST ENVIRONMENTALLY FRIENDLY • Rinsing • Etching • Screen printing / Dispensing • Rinsing • Heating minus 50% • Stripping • Cleaning Screen printing / Dispensing • Drying • Drying Cleaning minus 63% Drying isishape™ PROCESSES xx/xx/xxxx Editor: Presentation name here Page 5
  6. 6. Table of Contents 1 MOTIVATION 2 TECHNOLOGY & PROCESSES 3 CONCEPT & PERFORMANCE 4 ENVIRONMENTAL IMPACT 5 SUMMARY & CLOSING REMARKS xx/xx/xxxx Editor: Presentation name here Page 6
  7. 7. The isishape™ structuring process Screen Cleaning Structured Substrate Heating Print & Drying Substrate EASY, FAST & ENVIRONMENTALLY FRIENDLY xx/xx/xxxx Editor: Presentation name here Page 7
  8. 8. Printing Step: Screen Printing Screen Printer Application Laboratory Darmstadt Key Features • Using regular screen printer (low investment) • Wet film height: 5-40µm • Non-aggressive formulation (no Cl2, no HF) • Common acid resistance screens (stainless steel or polymer) • Safe working environment • Excellent cleaning of equipment Just print your “etch structure” on … and screens with water Formulation for other printing techniques available xx/xx/xxxx Editor: Presentation name here Page 8
  9. 9. Etching Step: Heating Laboratory: Hot Plate Production: Belt Furnace xx/xx/xxxx Editor: Presentation name here Page 9
  10. 10. Cleaning Step: Rinsing CLEANING WITHOUT ORGANIC DETERGENT • DI water only • According to requirements: a) Spray nozzle b) Ultra Sonic bath c) Rinse water neutralisation by 1N KOH (17ml per 1litre DI water) Carbon filter …or combinations Rotary pump xx/xx/xxxx Editor: Presentation name here Page 10
  11. 11. Table of Contents 1 MOTIVATION 2 TECHNOLOGY & PROCESSES 3 CONCEPT & PERFORMANCE 4 ENVIRONMENTAL IMPACT 5 SUMMARY & CLOSING REMARKS xx/xx/xxxx Editor: Presentation name here Page 11
  12. 12. isishape™ Concept PRINTABLE STRUCTURING SOLUTIONS Functional and Semiconductors TCO Layers (wafers and layers) Metal Layers Antireflective Layers ITO SiO2 c-Si Al IZO SiNx a-Si Ag AZO The chemical concept enables selective etching of layer systems. Other structuring solutions upon request. ZnO xx/xx/xxxx Editor: Presentation name here Page 12
  13. 13. Selectivity is Possible • Different pastes used SiO2 Metal Printing ITO Substrate SiO2 Metal Heating ITO Substrate SiO2 Metal ITO Cleaning Substrate xx/xx/xxxx Editor: Presentation name here Page 13
  14. 14. isishape HiperEtch™ 04S 130 nm ITO / GLASS Key Features • Screen-printable Paste • ITO etching at 100-180°C (oven) • smallest line width <40 µm on 130 nm crystalline ITO thickness 40µm • Excellent cleaning of ITO glass and screens with water • Very low concentrations of organic Screen: stainless steel compounds and etchant in water after 350 mesh, 16 µm wire diameter, rinsing 5 µm emulsion thickness • Environmentally friendly process Pattern: 25 µm Etching: on hot plate at 170°C, for 180 sec (no HF, no Cl2) xx/xx/xxxx Editor: Presentation name here Page 14
  15. 15. isishape HiperEtch™ 04S 130 nm ITO / GLASS Key Features • Screen-printable Paste • ITO etching at 100-150°C (oven) • smallest line width <70 µm on 280 nm amorphous ITO thickness • Excellent cleaning of ITO glass and screens with water 270 nm ITO / PLASTIC • Very low concentrations of organic Screen: stainless steel compounds and etchant in water after 250 mesh, 25 µm wire diameter, rinsing 20 µm emulsion thickness • Environmentally friendly process Pattern: 60 µm Etching: on hot plate at 140°C, for 180 sec (no HF, no Cl2) xx/xx/xxxx Editor: Presentation name here Page 15
  16. 16. Surface Profile of Structured ITO • ITO – Structuring on Plastic Substrate – isishape HiperEtch™ 09S Etching at 140°C, for 180 sec on hotplate – 50 µm line width / 5-6µm shoulder xx/xx/xxxx Editor: Presentation name here Page 16
  17. 17. isishape HiperEtch™ 06S Key Features 145 nm Al / PLASTIC • Screen-printable Paste • AL etching at 100-150°C (oven) • smallest line width <50 µm on 100-300 nm Al thickness 50µm • Excellent cleaning of ITO glass and screens with water • Very low concentrations of organic Screen: stainless steel compounds and etchant in water after 300 mesh, 20 µm wire diameter, rinsing 15 µm emulsion thickness • Environmentally friendly process Pattern: 75 µm Etching: oven at 120°C, for 120 sec (no HF, no Cl2) xx/xx/xxxx Editor: Presentation name here Page 17
  18. 18. isishape SolarEtch™ BES 80nm PE-CVD SiNx Key Features on textured c-Si • Screen-printable Paste • SiNx etching at 280-380°C • smallest line width 80 µm on textured surface • Very good line definition after etching • Excellent cleaning of wafers with 0.1% KOH solution in water (cleaning without detergent) Screen: stainless steel • Very low concentrations of organic 280 mesh, 25 µm wire diameter, compounds and etchant in water after 19 µm emulsion thickness rinsing Pattern: 80 µm Etching: on hot plate at 350°C, for 120 sec • Environmentally friendly process (no HF, no Cl2) xx/xx/xxxx Editor: Presentation name here Page 18
  19. 19. isishape SolarEtch™ BES Diameter: 54µm 80nm SiNx on shiny etched Si 80nm SiNx on dg c-Si Screen: stainless steel 300 mesh, 20 µm wire diameter, 20 µm emulsion thickness Pattern: 30 / 40 µm Etching: on hot plate at 350°C, for 120 sec xx/xx/xxxx Editor: Presentation name here Page 19
  20. 20. isishape SolarEtch™ BRS 120nm SiO2 on c-Si Key Features • Screen-printable Paste • Fast etching process for thermal grown SiO2 • smallest line width 100 µm 110 µm • Very good line definition after etching • ≈30 seconds at 20°C for 100nm SiO2 • Maximum etch depth of 250nm SiO2 • Excellent cleaning for wafers and Screen: stainless steel screens with water 250 mesh, 25 µm wire diameter, 19 µm emulsion thickness • Very low concentrations of organic Pattern: 100 µm compounds and etchant in water after Etching: at room temperature, for 30 sec rinsing xx/xx/xxxx Editor: Presentation name here Page 20
  21. 21. isishape SolarEtch™ SiD Dispenser Dispenser Application Laboratory Darmstadt Key Features Application Laboratory Darmstadt • Contactless process with dispensing • Silicon etching at 200-250°C (oven) • smallest line width 300 µm on Silicon • Excellent cleaning of wafer and screen with water • Easy in-line integration • Low investment costs • No need for screens and stencils • Very flexible for R&D and production xx/xx/xxxx Editor: Presentation name here Page 21
  22. 22. isishape SolarEtch™ SiD 401 601 801 1001 1 Width: 400 µm Depth:2.7 µm xx/xx/xxxx Editor: Presentation name here Page 22
  23. 23. Table of Contents 1 MOTIVATION 2 TECHNOLOGY & PROCESSES 3 CONCEPT & PERFORMANCE 4 ENVIRONMENTAL IMPACT 5 SUMMARY & CLOSING REMARKS xx/xx/xxxx Editor: Presentation name here Page 23
  24. 24. The isishape™ Structuring Process Exhaust Into air without any treatment Screen Heating Cleaning Structured Substrate Print & Drying Substrate Waste water & Filters xx/xx/xxxx Editor: Presentation name here Page 24
  25. 25. Cross flow filtration for rinse water (as one possible process) + KOH for keeping pH Fresh Rinse Water pH Cross Flow Filter Rotary Pump xx/xx/xxxx Editor: Presentation name here Page 25
  26. 26. Waste Water Analysis Results isishape HiperEtch™ 04S 100mg PASTE PER SUBSTRATE 30 2 litre TAP WATER FOR RINSING 25 COD 24 BOD 20 mg per litre CROSS FLOW FILTRATION (Pall Module UNP-1003 CROSS FLOW FILTRATION 15 PVDF; Pore size 100 kD) (Pall Module UNP-1003 PVDF; Pore size 100 kD) plus Ionic exchange or 10 Osmose water treatment. 9 5 6 3 2 1 0 UNTREATED WASTE CROSS FLOW CROSS FLOW + WATER FILTRATED WASTE OSMOSE FILTRATED WATER WASTE WATER xx/xx/xxxx Editor: Presentation name here Page 26
  27. 27. Table of Contents 1 MOTIVATION 2 TECHNOLOGY & PROCESSES 3 CONCEPT & PERFORMANCE 4 ENVIRONMENTAL IMPACT 5 SUMMARY & CLOSING REMARKS xx/xx/xxxx Editor: Presentation name here Page 27
  28. 28. Summary Display isishape HiperEtch™ concept shows many advantages in display applications: ⊚ Excellent processing ⊚ Standard equipment for printing, etching and rinsing ⊚ Very good line resolution (down to 40 µm) ⊚ Low material consumption ⊚ Fast etching rate (100 nm /minute) ⊚ Environmentally friendly ⊚ Very low organic concentration in rinse water ⊚ Easy cleaning without organic detergent ⊚ isishape HiperEtch™ products contain no fluoride xx/xx/xxxx Editor: Presentation name here Page 28
  29. 29. Summary Solar isishape SolarEtch™ concept shows many advantages in Solar Cell production: ⊚ Excellent processing ⊚ Standard equipment for printing, etching and rinsing ⊚ Improved paste spreading + Very good line resolution (down to 80 µm SiNx on textured Si front side) ⊚ Low material consumption ⊚ Fast etching rate (100 nm [SiNx] – 1 µm /minute [Si]) ⊚ Environmentally friendly ⊚ Very low organic concentration in rinse water ⊚ Easy cleaning without organic detergent ⊚ isishape™ products contain no fluoride (except BRS) xx/xx/xxxx Editor: Presentation name here Page 29
  30. 30. Final Remark / Q&A Session ST RU CT UR IN G SO LU TI O NS EASY - FAST - ENVIRONMENTALLY FRIENDLY WE WILL SUPPORT YOUR SUCCESS xx/xx/xxxx Editor: Presentation name here Page 30
  31. 31. xx/xx/xxxx Editor: Presentation name here Page 31
  32. 32. THANK YOU FOR YOUR ATTENTION. xx/xx/xxxx Editor: Presentation name here Page 32

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